Preliminary Preliminary

Product Description
Stanford Microdevices SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 5-2000 MHz cellular, ISM, WLL and narrowband PCS applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.

SXH-189
5-2000 MHz Medium Power GaAsHBT Amplifier

Product Features Patented High Reliability GaAs HBT Technology High 3rd Order Intercept : +39 dBm typ.
at 1960 MHz Surface-Mountable Power Plastic Package

Typical IP3, P1dB, Gain

45 40 35 30 25 20 15 10 5 0
IP3 IP3

dBm

P1dB Gain(dB)

P1dB

Gain(dB)

Applications PCS, Cellular Systems High Linearity IF Amplifiers

850 MHz

1960 MHz

Symbol P 1dB S 21 S11 IP3 NF

Parameters: Test Conditions: Z0 = 50 Ohms, Ta = 25C Output Power at 1dB Compression Small signal gain Input VSWR Third Order Intercept Point Noise Figure f = 850 MHz f =1960 MHz f = 850 MHz f =1960 MHz f = 850 MHz f =1960 MHz f = 850 MHz f =1960 MHz f = 850 MHz f =1960 MHz V s = 8V Rbias = 27 ohms Vdevice 5V

Units dB m dB m dB dB dB m dB m dB dB mA C/W

Min.

Typ. 23.0 23.0

Max.

17.5

19.5 14.0 1.5:1 1.9:1 39.0 39.0 5.0 5.0

Id Rth, j-l

Device Current Thermal Resitance (junction - lead)

80

100 108

130

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com
EDS-101247 Rev D

Preliminary Preliminary SXH-189 5-2000 MHz Power Amplifier

850 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V
Note: Tuned for Output IP3 P1dB vs Frequency Gain vs. Frequency

25 24
dBm

25 23
25C
dB

23 22 21

-40C

85C

21
25C -40C

19 17 15

85C

20 800

825

850

875
MHz

900

925

950

800

825

850

875
MHz

900

925

950

Input/Output Return Loss, Isolation vs Frequency

Third Order Intercept vs. Frequency (POUT per tone = 11dBm)

5 0 -5 -10 -15 -20 -25 -30 -35 800

44
S22

42
dBm

40 38

25C 85C

dB

-40C

S11

S12

36 34 800

850
MHz

900

950

825

850

875
MHz

900

925

950

Third Order Intercept vs Tone Power

Device Current vs. Source Voltage

180 160 140 120 100 80 60 40 20 0 0
25C -40C 85C

42 40
dBm Device Current (mA)

25C -40C 85C

38 36 34 0

12

15

4
VS (V)

10

POUT per tone (dBm)

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com
EDS-101247 Rev D

Preliminary Preliminary SXH-189 5-2000 MHz Power Amplifier

1960 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V
Note: Tuned for Output IP3 P1dB vs Frequency
25 24
dBm

Gain vs. Frequency

20 18
-40C 85C
dB

23 22 21 20 1930

25C

16
25C

-40C

14
85C

12 10
1940 1950 1960
MHz

1970

1980

1990

1930

1940

1950

1960
MHz

1970

1980

1990

Input/Output Return Loss, Isolation vs Frequency

Third Order Intercept vs. Frequency (POUT per tone = 11dBm)

0 -5
S22

43 41
S11
dBm

-10
dB

-15 -20 -25

25C

39
-40C

85C

S12

37 35 1930

-30 -35 1930 1940 1950 1960

MHz

1970

1980

1990

1940

1950

1960
MHz

1970

1980

1990

Third Order Intercept vs Tone Power

Device Current vs. Source Voltage

43
Device Current (mA)

41
25C
dBm

39 37 35 33 0 3 6 9
-40C

85C

180 160 140 120 100 80 60 40 20 0 0

25C -40C 85C

12

15

4
VS (V)

10

POUT per tone (dBm)

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com
EDS-101247 Rev D

850 MHz Application Circuit

Preliminary Preliminary SXH-189 5-2000 MHz Power Amplifier

Voltage Feed Resistor Bias Circuit (for > 7V supply)

Vs
Recommended Bias Resistor Values Supply Voltage(Vs) 7V 18 0.5W 8V 27 1.0W 10V 47 1.5W 12V 62 2.0W

Rbias 0.1 F (SIZE A) 390  1000pF 180
 33 nH

Z=50
, 12.9

Rbias (Ohms) Power Rating

68pF

33 nH
100 pF SXH-189
100pF

Rbias 390 Ohms 180 Ohms

0.1uF 1000pF 100pF

RFin

RFout

100 pF

33nH

33nH

5.6 pF

100pF

5.6pF

SXH-189

850 MHz Schematic

STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A

850 MHz Evaluation Board Layout

Active Current Feedback Bias Circuit (for 5V supply)

0.1 F (SIZE A)
Vs = 5V
Frequency 850 M H z 20.0 -22.8 37.7* 23.0

68 pF Rbias=4.3

Small Signal Gain (dB) Input Return Loss (dB)

220

2 6

Output IP3 (dBm) P1dB (dBm)

(Rohm) UMZ1N
1 5

1000 pF
4

Vdev 33 nH
*Note: IP3 performance degraded due to lower (4.5V) device voltage.

1.8 K9 7509 100 pF

100 pF
Z=50
, 12.9
UMZ1N 0.1 uF
220
68pF

GND VCC
4.3

SXH-189

1000pF 1.8K
33nH

5.6 pF
RF IN
1

RF OUT

850 MHz Schematic

100pF 5.6pF

750

100pF

NOTE: Reference Application Note AN-023 for more information on Active Current Feedback Bias Circuit.
ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE

STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-100xxx- SOT-89

850 MHz Active Bias Evaluation Board Layout

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com
EDS-101247 Rev D

1960 MHz Application Circuit

Preliminary Preliminary SXH-189 5-2000 MHz Power Amplifier

Voltage Feed Resistor Bias Circuit (for > 7V supply)

Recommended Bias Resistor Values Supply Voltage(Vs) 7V 18 0.5W 8V 27 1.0W 10V 47 1.5W 12V 62 2.0W

Vs

Rbias 0.1 F (SIZE A) 390
22pF

Rbias (Ohms) Power Rating

Rbias

1000pF 180
22nH

22nH
Z=50
, 45.5

390 Ohms 180 Ohms

68pF

RFin

0.1uF 1000pF 22pF

RFout

68pF

22nH

22nH

68pF

68 pF

SXH-189

1.8 pF
SXH-189

1.8pF

1960 MHz Schematic

STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A

1960 MHz Evaluation Board Layout

Active Current Feedback Bias Circuit (for 5V supply)

0.1 F (SIZE A)
Vs = 5V
Frequency Small Signal Gain (dB) Input Return Loss (dB) 1960 M H z 14.9 -12.1 38.0* 23.3

22 pF

220

2 6 1

(Rohm) UMZ1N

1000 pF
4 5 3

Rbias=4.3
Vdev 22nH

Output IP3 (dBm) P1dB(dBm)

*Note: IP3 performance degraded due to lower (4.5V) device voltage.

GND

1.8 K9 7509 68 pF

Z=50
, 45.5

68pF
UMZ1N 0.1 uF
220
22pF

VCC
4.3

1000pF 1.8K
22nH

SXH-189

1.2 pF

RF IN
1

RF OUT

68pF

1960 MHz Schematic

750
1.2pF

68pF

NOTE: Reference Application Note AN-023 for more information on Active Current Feedback Bias Circuit.
ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE

STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-100xxx- SOT-89

1960 MHz Active Bias Evaluation Board Layout

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com
EDS-101247 Rev D

Absolute Maximum Ratings

Parameter
Device Voltage Device Current Power Dissipation RF Input Power Junction Temperature Operating Temperature Storage Temperature

Preliminary Preliminary SXH-189 5-2000 MHz Power Amplifier

Part Number Ordering Information
Part Number Devices Per Reel Reel Siz e
SXH-189 1000 7"

Absolute Maximum
6V 200mA 1500mW 100mW +150C -40C to +85C -65C to +150C

Part Symbolization The part will be symbolized with a XA2 designator on the top surface of the package.

Caution: ESD sensitive

Appropriate precautions in handling, packaging and testing devices must be observed.

Package Dimensions

Pin Description
Pin # Function
1 2 B a se GND & Emitter Collector GND & Emitter Base pin. Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. Collector pin. Same as Pin 2

Description
4

XA2
1 2 3

3 4

PCB Pad Layout

Recommended via and mounting hole pattern (For RF Ground and Thermal considerations)

DIMENSIONS ARE IN INCHES [MM]

Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a continuous groundplane on the backside of the board.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com
EDS-101247 Rev D