CMA30E1600PN

Thyristor

VRRM I TAV VT

= = =

1600 V 23 A 1.42 V

Single Thyristor

Part number

CMA30E1600PN

Backside: Isolated

2 3

Features / Advantages:
Thyristor for line frequency Planar passivated chip Long-term stability

Applications:
Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control

Package: TO-220FP
Isolation Voltage: 2500 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Soldering pins for PCB mounting Base plate: Plastic overmolded tab Reduced weight

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130121c

2013 IXYS all rights reserved

CMA30E1600PN
Thyristor
Symbol V RSM/DSM V RRM/DRM I R/D VT Definition Conditions TVJ = 25C TVJ = 25C TVJ = 25C TVJ = 125C TVJ = 25C TVJ = 125 C T VJ = 150 C TVJ = 150 C min.
max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current forward voltage drop

Ratings typ. max. 1700 1600 10 2 1.42 1.80 1.42 1.92 23 36 0.90 17 2.5 0.50 TC = 25C t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine TVJ = 45C VR = 0 V TVJ = 150 C VR = 0 V TVJ = 45C VR = 0 V TVJ = 150 C VR = 0 V TVJ = 25C T C = 150 C 9 10 5 0.5 TVJ = 125C; f = 50 Hz t P = 200 s; di G /dt = 0.2 A/s; IG = 0.2 A; VD = VDRM non-repet., IT = 30 A 500 A/s 500 V/s 1.3 1.6 28 50 0.2 1 t p = 10 s IG = 0.2 A; di G /dt = 0.2 A/s TVJ = 25 C TVJ = 25 C 0.5 A/s 150 s 20 V/s; t p = 200 s 80 2 mA s VD = 6 V R GK = VD = VDRM IG = 0.5 A; di G /dt = TVJ = 25 C 90 V V mA mA V mA mA repetitive, IT = 90 A 50 260 280 220 240 340 325 240 240 Unit V V A mA V V V V A A V m K/W K/W W A A A A As As As As pF W W W

VR/D = 1600 V VR/D = 1600 V IT = IT = IT = IT = 30 A 60 A 30 A 60 A

I TAV I T(RMS) VT0 rT R thJC R thCH Ptot I TSM

average forward current RMS forward current threshold voltage slope resistance

TC = 40C 180 sine

for power loss calculation only

thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current

It

value for fusing

t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine

CJ PGM PGAV (di/dt) cr

junction capacitance max. gate power dissipation

VR = 400 V f = 1 MHz t P = 30 s t P = 300 s

average gate power dissipation critical rate of rise of current

150 A/s

(dv/dt) cr VGT I GT VGD I GD IL IH t gd tq

critical rate of rise of voltage

VD = VDRM R GK = ; method 1 (linear voltage rise) VD = 6 V VD = 6 V VD = VDRM

TVJ = 125C TVJ = 25 C TVJ = -40 C TVJ = 25 C TVJ = -40 C TVJ = 125 C

gate trigger voltage

gate trigger current

gate non-trigger voltage gate non-trigger current latching current

holding current gate controlled delay time

turn-off time

VR = 100 V; I T = 30 A; VD = VDRM TVJ = 150 C di/dt = 10 A/s; dv/dt =

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130121c

2013 IXYS all rights reserved

CMA30E1600PN
Package
Symbol I RMS Tstg T VJ Weight MD FC d Spp/App d Spb/Apb VISOL
mounting torque mounting force with clip creepage distance on surface | striking distance through air isolation voltage t = 1 second t = 1 minute 50/60 Hz, RMS; IISOL 1 mA terminal to terminal terminal to backside

TO-220FP
Definition
RMS current storage temperature virtual junction temperature

Ratings Conditions
per terminal

min. -55 -40

typ.

max. 35 150 150

Unit A C C g Nm N mm mm V V

2 0.4 20 1.6 2.5 1.0 2.5 2500 2080 0.6 60

Product Marking

Part number
C M A 30 E 1600 PN = = = = = = = Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-220ABFP (3)

Part Number Logo DateCode Assembly Code Assembly Line

abcdef
YYWW Z

XXXXXX

Ordering Standard

Part Number CMA30E1600PN

Marking on Product CMA30E1600PN

Delivery Mode Tube

Quantity 50

Code No. 505254

Similar Part CMA30E1600PB CS22-12io1M CLA30E1200PB CLA30E1200PC CLA30E1200HB CS22-08io1M

Package TO-220AB (3) TO-220ABFP (3) TO-220AB (3) TO-263AB (D2Pak) (2) TO-247AD (3) TO-220ABFP (3)

Voltage class 1600 1200 1200 1200 1200 800

Equivalent Circuits for Simulation

I V0 R0
threshold voltage slope resistance * Thyristor

* on die level

T VJ = 150C

V 0 max R 0 max

0.9 14

V m

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130121c

2013 IXYS all rights reserved

CMA30E1600PN
Outlines TO-220FP

E Q

A A1 H

Dim.

1 2 3
L1 A2 L

b1 e

A A1 A2 b c D E e H L L1 P Q

Millimeters min max 4.50 4.90 2.34 2.74 2.56 2.96 0.70 0.90 0.45 0.60 15.67 16.07 9.96 10.36 2.54 BSC 6.48 6.88 12.68 13.28 3.03 3.43 3.08 3.28 3.20 3.40

Inches min max 0.177 0.193 0.092 0.108 0.101 0.117 0.028 0.035 0.018 0.024 0.617 0.633 0.392 0.408 0.100 BSC 0.255 0.271 0.499 0.523 0.119 0.135 0.121 0.129 0.126 0.134

2 3

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130121c

2013 IXYS all rights reserved

CMA30E1600PN
Thyristor
60 50 40 200 TVJ = 45C 250 50 Hz, 80% VRRM 1000 VR = 0 V

IT
30

ITSM [A]
20 10 0 0.5 TVJ = 125C 150C TVJ = 25C 1.0 1.5 2.0 100 0.01 0.1 1 150 TVJ = 125C TVJ = 45C

It
100

TVJ = 125C

[A]

[A s]

10 1 2 3 4 5 6 7 8 910

VT [V] Fig. 1 Forward characteristics

t [s] Fig. 2 Surge overload current ITSM: crest value, t: duration

102 40
2

t [ms] Fig. 3 I t versus time (1-10 s)

IGD: TVJ = 125C

IGD: TVJ = -40C

VG [V]
1
IGD: TVJ = 25C

IGD: TVJ = 0C

101

TVJ = 125C

30

tgd [s]
lim. typ.

ITAVM
20

[A]
10

dc = 1 0.5 0.4 0.33 0.17 0.08

100

IGD: TVJ = 25C

0 0 25 50 75

10-1
-2

10-1

100

101

0 0 40 80 120 160

IG [mA] Fig. 4 Gate voltage & gate current

Triggering: A = no; B = possible; C = safe

IG [A] Fig. 5 Gate controlled delay time tgd

Tcase [C] Fig. 6 Max. forward current at case temperature

40

30

dc = 1 0.5 0.4 0.33 0.17 0.08

P(AV)
20

RthHA 0.6 0.8 1.0 2.0 4.0 8.0

2.5

2.0

1.5

i Rthi (K/W) 1 0.1 2 0.06 3 0.2 4 0.35 5 1.79

ti (s) 0.01 0.0001 0.02 0.4 0.15

ZthJC
1.0

[W]
10

[K/W]
0.5

0 0 10 20 30 0 50 100 150

0.0 1 10 100 1000 10000

IF(AV) [A]

Tamb [C]

t [ms] Fig. 7 Transient thermal impedance junction to case

Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130121c

2013 IXYS all rights reserved