IRFD220

Data Sheet July 1999 File Number

2317.3

0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09600.

Features
0.8A, 200V rDS(ON) = 0.800 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards

Ordering Information
PART NUMBER IRFD220 PACKAGE HEXDIP BRAND IRFD220

Symbol
D

NOTE: When ordering, use the entire part number.

Packaging
HEXDIP

DRAIN GATE SOURCE

4-287

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999

IRFD220
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied IRFD220 200 200 0.8 6.4 20 1.0 0.008 85 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC
oC oC

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.

NOTE: 1. TJ = 25oC to TJ = 125oC.

Electrical Specications
PARAMETER

TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V (Figure 9) VGS = VDS, ID = 250A VDS = Rated BVDSS , VGS = 0V VDS = 0.8 x Rated BVDSS , VGS = 0V, TC = 125oC MIN 200 2.0 0.8 0.5 VGS = 10V, ID 0.8A, VDS = 0.8 x Rated BVDSS IG(REF) = 1.5mA, (Figure 13) Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS = 25V, f = 1MHz (Figure 10) Measured from the Drain Lead, 2mm (0.08in) from Package to Center of Die Measured from the Source Lead, 2mm (0.08in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances
D LD G LS S

TYP 0.5 1.1 20 30 50 30 11 6.0 5.0 450 150 40 4.0

MAX 4.0 25 250 100 0.8 40 60 100 60 15 -

UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH

Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current

On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain Miller Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance

ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD

VDS > ID(ON) x rDS(ON)MAX , VGS = 10V (Figure 6) VGS = 20V ID = 0.4A, VGS = 10V (Figures 7, 8) VDS > ID(ON) x rDS(ON)MAX , ID = 0.4A (Figure 11) VDD = 0.5 x Rated BVDSS , ID 0.8A, RG = 9.1, RL = 74, VGS = 10V, MOSFET Switching Times are Essentially Independent of Operating Temperature

Internal Source Inductance

LS

6.0

nH

Thermal Resistance Junction to Ambient

RJA

Free Air Operation

120

oC/W

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IRFD220
Source to Drain Diode Specications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D

MIN -

TYP -

MAX 0.8 6.4

UNITS A A

Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:

VSD trr QRR

TJ = 25oC, ISD = 0.8A, VGS = 0V (Figure 12) TJ = 150oC, ISD = 0.8A, dISD/dt = 100A/s TJ = 150oC, ISD = 0.8A, dISD/dt = 100A/s

150 0.6

2.0 -

V ns C

2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. 4. VDD = 25V, starting TJ = 25oC, L = 12.62mH, RG = 50, peak IAS = 3.5A.

Typical Performance Curves

1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8

Unless Otherwise Specied

1.0

ID , DRAIN CURRENT (A) 0 25 50 75 100 125 TA , AMBIENT TEMPERATURE (oC) 150

0.8

0.6

0.6 0.4

0.4

0.2 0

0.2

0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE

10

10

VGS = 10V VGS = 7V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 6V

ID , DRAIN CURRENT (A)

10s 100s 1ms 10ms 100ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED 1 10 102 VDS , DRAIN TO SOURCE VOLTAGE (V) 103

ID , DRAIN CURRENT (A)

0.1

VGS = 5V

0.01

1s DC

2 VGS = 4V 0 0 20 40 60 80 VDS , DRAIN TO SOURCE VOLTAGE (V) 100

0.001

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

FIGURE 4. OUTPUT CHARACTERISTICS

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IRFD220 Typical Performance Curves

5 VGS = 10V VGS = 8V ID , DRAIN CURRENT (A) 4 VGS = 6V VGS = 5V 3 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

Unless Otherwise Specied (Continued)

10 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS > ID(ON) x rDS(ON)MAX TJ = -55oC TJ = 25oC TJ = 125oC

ID(ON) , ON-STATE DRAIN CURRENT (A)

1 VGS = 4V 0 0 2 4 6 8 VDS , DRAIN TO SOURCE VOLTAGE (V) 10

10

VGS , GATE TO SOURCE VOLTAGE (V)

FIGURE 5. SATURATION CHARACTERISTICS

FIGURE 6. TRANSFER CHARACTERISTICS

1.0 rDS(ON) , ON-STATE RESISTANCE ()

0.8 VGS = 20V 0.6 VGS = 10V 0.4

NORMALIZED ON RESISTANCE

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

2.2

VGS = 10V, ID = 0.4A

1.8

1.4

1.0

0.2

0.6

0.2 0 2 6 4 ID , DRAIN CURRENT (A) 8 10 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC)

FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT

FIGURE 8. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE

1000

NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE

1.25

ID = 250A 800

VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD

1.15

C, CAPACITANCE (pF)

600 CISS 400 COSS CRSS

1.05

0.95 0.85

200

0.75 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC)

10 40 30 20 VDS , DRAIN TO SOURCE VOLTAGE (V)

50

FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

4-290

IRFD220 Typical Performance Curves

5 gfs , TRANSCONDUCTANCE (S) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

Unless Otherwise Specied (Continued)

10 TJ = -55oC TJ = 25oC TJ = 125oC ISD , SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TJ = 150oC TJ = 25oC 1

0 0 2 4 6 8 10 ID , DRAIN CURRENT (A)

0.1 0 1 2 3 VSD , SOURCE TO DRAIN VOLTAGE (V)

FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT

FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE

20 ID = 0.8A VGS , GATE TO SOURCE (V) VDS = 40V VDS = 100V 10 VDS = 160V

15

0 0 4 8 12 16 20 Qg , GATE CHARGE (nC)

FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Test Circuits and Waveforms

VDS tP IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG +

BVDSS L VDS VDD

VDD

0V

IAS 0.01

0 tAV

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

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IRFD220 Test Circuits and Waveforms

(Continued)

tON td(ON) tr VDS RL 90%

tOFF td(OFF) tf 90%

RG DUT

VDD

10% 90%

10%

VGS 0 10%

50% PULSE WIDTH

50%

VGS

FIGURE 16. SWITCHING TIME TEST CIRCUIT

FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

CURRENT REGULATOR

VDS (ISOLATED SUPPLY)

VDD Qg(TOT) Qgd Qgs VGS

12V BATTERY

0.2F

50k

SAME TYPE AS DUT 0.3F

D G DUT

VDS 0

IG(REF) 0 IG CURRENT SAMPLING RESISTOR

S VDS ID CURRENT SAMPLING RESISTOR

IG(REF) 0

FIGURE 18. GATE CHARGE TEST CIRCUIT

FIGURE 19. GATE CHARGE WAVEFORMS

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