Beruflich Dokumente
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NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011)
1BC847BL3
Type BC847A BC847B BC847BL3* BC847BW BC847C BC847CW BC848A BC848B BC848BL3 BC848BW BC848C BC848CW BC849B BC849C BC849CW BC850B BC850BW BC850C BC850CW
Marking 1Es 1Fs 1F 1Fs 1Gs 1Gs 1Js 1Ks 1K 1Ks 1Ls 1Ls 2Bs 2Cs 2Cs 2Fs 2Fs 2Gs 2Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C -
Package SOT23 SOT23 TSLP-3-1 SOT323 SOT23 SOT323 SOT23 SOT23 TSLP-3-1 SOT323 SOT23 SOT323 SOT23 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323
BC847...-BC850...
Maximum Ratings Parameter Collector-emitter voltage BC847..., BC850... BC848..., BC849... Collector-emitter voltage BC847..., BC850... BC848..., BC849... Collector-base voltage BC847..., BC850... BC848..., BC849... Emitter-base voltage BC847..., BC850... BC848..., BC849... Collector current Peak collector current, tp 10 ms Total power dissipationTS 71 C, BC847-BC850 TS 135 C, BC847BL3-BC848BL3 TS 124 C, BC847W-BC850W Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BC847-BC850 BC847BL3-BC848BL3 BC847W-BC850W Tj Tstg Symbol RthJS IC ICM Ptot 330 250 250 150 -65 ... 150 Value 240 60 105 Unit K/W C VEBO 6 6 100 200 mW mA VCBO 50 30 VCES 50 30 Symbol VCEO 45 30 Value Unit V
1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2011-09-09
BC847...-BC850...
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO
IC = 10 mA, IB = 0 , BC847..., BC850... IC = 10 mA, IB = 0 , BC848..., BC849...
Unit
45 30
V(BR)CBO
50 30
V(BR)EBO ICBO
hFE
DC current gain1)
IC = 10 A, VCE = 5 V, hFE-grp.A IC = 10 A, VCE = 5 V, hFE-grp.B IC = 10 A, VCE = 5 V, hFE-grp.C IC = 2 mA, VCE = 5 V, hFE-grp.A IC = 2 mA, VCE = 5 V, hFE-grp.B IC = 2 mA, VCE = 5 V, hFE-grp.C
VBEsat
VBE(ON)
Base-emitter voltage1)
IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V
1Pulse test: t < 300s; D < 2%
580 -
2011-09-09
BC847...-BC850...
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C Open-circuit reverse voltage transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C Short-circuit forward current transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C Noise figure IC = 200 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 2 k, BC849..., BC850... Equivalent noise voltage IC = 200 A, VCE = 5 V, RS = 2 k, f = 10 ... 50 Hz , BC850... Vn 0.135 V F h22e 18 30 60 1.2 4 dB h21e 200 330 600 S h12e 1.5 2 3 h11e 2.7 4.5 8.7 10-4 k Ceb 9 Ccb 0.95 pF fT 250 MHz Symbol min. Values typ. max. Unit
2011-09-09
BC847...-BC850...
DC current gain hFE = (IC) VCE = 5 V
10 3
EHP00365
h FE 5
100 C 25 C
mA 100 C 25 C -50 C
10 2 5
-50 C
10 1 5
10 1 5
10 5
10 0 10 -2
5 10 -1
5 10 0
5 10 1
mA 10 2
10 -1
0.1
0.2
0.3
0.4
V 0.5 VCEsat
C mA
100 C 25 C -50 C
CB0
nA max
10 3 5
10 1 5
10 2 5
typ
10 0 5
10 5
1
10 -1
10 0
0.2
0.4
0.6
0.8
1.2
50
100
C TA
150
V BEsat
2011-09-09
BC847...-BC850...
Transition frequency fT = (IC) VCE = 5 V
10 3 MHz
EHP00363
fT
5
CCB/CEB
10 9 8 7 6 5
CEB
10 2
4 3 2 1
CCB
10 1 10 -1
5 10 0
10 1
mA
10 2
0 0
12
16
22
VCB/V EB
mW
300 270
250 225
Ptot
Ptot
240
C 150 TS
0 0
15
30
45
60
75
90 105 120 C
150
TS
2011-09-09
BC847...-BC850...
Total power dissipation P tot = (TS) BC847W-BC850W
300
mW
250 225
Ptot
10 2 5
10 1 5
TS
10 0 10 -6
10 -5
10 -4
10 -3
10 -2
s tp
10 0
Ptotmax/ PtotDC
10
10
10 0
R thJS
10 1
10 -1 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
tp
tp
2011-09-09
BC847...-BC850...
Noise figure F = (VCE) IC = 0.2mA, RS = 2k , f = 1kHz
BC 846...850 EHP00370
20
20 dB
dB
F
15
15
10
10
0 10 -1
10 0
10 1
V VCE
10 2
0 10 -2
10 -1
10 0
10 1
kHz 10 2 f
20 dB
20 dB
F
15 RS = 1 M 100 k 10 k
F
15 RS = 1 M 10
100 k 10 k
10 500
1 k
5 1 k
5 500
0 10 -3
10 -2
10 -1
10 0
mA 10 1
0 10 -3
10 -2
10 -1
10 0
mA 10 1
2011-09-09
BC847...-BC850...
Noise figure F = (IC ) VCE = 5V, f = 10kHz
BC 846...850 EHP00374
20 dB
F
15 R S = 1 M 100 k 10 500 10 k
5 1 k
0 10 -3
10 -2
10 -1
10 0
mA 10 1
2011-09-09
Package SOT23
BC847...-BC850...
Package Outline
0.15 MIN.
2.9 0.1
3
B
2.4 0.15
10 MAX.
1)
10 MAX.
C 0.95 1.9
0.08...0.1
0...8
0.25 M B C
0.2
Foot Print
0.8
0.9
0.8
1.2
EH s
Pin 1
0.9
1.3
Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 330 mm = 10.000 Pieces/Reel
4 0.9
2.13 2.65
0.2
Pin 1
3.15
1.15
10
2011-09-09
Package SOT323
BC847...-BC850...
Package Outline
2 0.2 0.3 +0.1 -0.05 3
1.25 0.1 2.1 0.1
1 0.65 0.65
0.1 MIN.
Foot Print
0.6
0.8
0.65 0.65
1.6
Pin 1
Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 330 mm = 10.000 Pieces/Reel
4 0.2
Pin 1
2.15
2.3
1.1
11
2011-09-09
Package TSLP-3-1
BC847...-BC850...
Package Outline
Top view Bottom view
0.05 MAX.
3 2
1 0.05
3 1 2
1
2 x 0.25 0.035
0.45
1)
Pin 1 marking
Foot Print
For board assembly information please refer to Infineon website "Packages"
0.275
0.6
0.35
0.35
0.945
0.3
0.355
R0.1
0.2
0.17
Stencil apertures
Standard Packing
Reel 180 mm = 15.000 Pieces/Reel
4 0.5
1.16
Pin 1 marking
0.76
0.315
0.25 0.035
0.4 +0.1
1)
12
2011-09-09
BC847...-BC850...
Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany
2009 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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2011-09-09