QRE1113, QRE1113GR Minature Reective Object Sensor

August 2011

QRE1113, QRE1113GR Minature Reective Object Sensor

Features
Phototransistor output No contact surface sensing Miniature package Lead form style: Gull Wing Two leadform options: Through hole (QRE1113)

SMT gullwing (QRE1113GR)

Two packaging options: Tube (QRE1113)

Tape and reel (QRE1113GR)

QRE1113GR Package Dimensions

2.90 2.50 1.00 4 3 0.94
C L

0.60 0.40

1.80
C L

3.60 3.20 0.94

30 0.40 1.70 1.50

0.61 Nom. (4x) 4.80 4.40

1.10 0.90

Notes: 1. Dimensions for all drawings are in millimeters. 2. Tolerance of 0.15mm on all non-nominal dimensions

2011 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.7.0

www.fairchildsemi.com

QRE1113, QRE1113GR Minature Reective Object Sensor

QRE1113 Package Dimensions

2.90 2.50 1.00 4 3 0.94
C L

0.60 0.40

1.80
C L

3.60 3.20 0.94

4.20 3.80 0.40 1.70 1.50

10.4 8.4

0~20

0~20

Notes: 1. Dimensions for all drawings are in millimeters. 2. Tolerance of 0.15mm on all non-nominal dimensions

Schematic

Pin 1: Anode Pin 2: Cathode

Pin 3: Collector Pin 4: Emitter

2011 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.7.0

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QRE1113, QRE1113GR Minature Reective Object Sensor

Absolute Maximum Ratings (TA = 25C unless otherwise specied)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol
TOPR TSTG TSOL-I TSOL-F EMITTER IF VR IFP PD SENSOR VCEO VECO IC PD

Parameter
Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3)

Rating
-40 to +85 -40 to +90 240 for 5 sec 260 for 10 sec 50 5 1 75 30 5 20 50

Units
C C C C mA V A mW V V mA mW

Continuous Forward Current Reverse Voltage Peak Forward Power Current(5) Dissipation(1)

Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation(1)

Electrical/Optical Characteristics (TA = 25C unless otherwise specied)

Symbol
VF IR PE ID COUPLED IC(ON) ICX VCE (SAT) tr tf On-State Collector Current Cross-Talk Collector Current Saturation Voltage Rise Time Fall Time VCC = 5V, IC(ON) = 100A, RL = 1k 20 20 IF = 20mA, VCE = 5V(6) IF = 20mA, VCE = 5V(7) 0.10 0.40 1 0.3 mA A V s

Parameter
Forward Voltage Reverse Leakage Current Peak Emission Wavelength Collector-Emitter Dark Current

Test Conditions
IF = 20mA VR = 5V IF = 20mA IF = 0mA, VCE = 20V

Min.

Typ.
1.2 940

Max.
1.6 10

Units
V A nm

INPUT DIODE

OUTPUT TRANSISTOR 100 nA

Notes: 1. Derate power dissipation linearly 1.00mW/C above 25C. 2. RMA ux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) from housing. 5. Pulse conditions: tp = 100s; T = 10ms. 6. Measured using an aluminum alloy mirror at d = 1mm. 7. No reective surface at close proximity.

2011 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.7.0

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QRE1113, QRE1113GR Minature Reective Object Sensor

Typical Performance Curves

IC (ON)- NORMALIZED COLLECTOR CURRENT
1.0 1.0 IF = 10 mA VCE = 5 V TA = 25C

0.8

IC (ON) - COLLECTOR CURRENT (mA)

0.8

d 0
0.6

0.6

0.4 Sensing Object: White Paper (90% reflective) 0.2 Mirror

0.4

0.2

0.0 0 1 2 3 4 5

0.0 0 4 8 12 16 20

d-DISTANCE (mm)

IF - FORWARD CURRENT (mA)

Fig. 1 Normalized Collector Current vs. Distance between device and reflector

Fig. 2 Collector Current vs. Forward Current

IC (ON) - NORMALIZED COLLECTOR CURRENT

1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4

d = 1 mm, 90% reflection TA = 25C

ICEO - NORMALIZED DARK CURRENT

2.0

102 Normalized to: VCE = 10 V TA = 25C 101 VCE = 10 V VCE = 5 V

IF = 25mA IF =20mA IF =15mA IF =10mA IF =5mA

100

10-1

0.2 0.0 0.1 1 10

10-2 25

40

55

70

85

VCE - COLLECTOR EMITTER VOLTAGE (V)

TA - Ambient Temperature (C)

Fig. 3 Normalized Collector Current vs. Collector to Emitter Voltage

Fig. 4 Collector Emitter Dark Current (Normalized) vs. Ambient Temperature

2011 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.7.0

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QRE1113, QRE1113GR Minature Reective Object Sensor

Typical Performance Curves (Continued)

50 100 TA = 25C 40 VCC = 10 V tpw = 100 us T=1ms TA = 25C IC = 0.3 mA

IF - FORWARD CURRENT (mA)

RISE AND FALL TIME (us)

tf tr 10 tf tr

30

20

IC = 1 mA

10

0 1.0

1.1

1.2

1.3

1.4

1.5

1 0.1

10

VF - FORWARD VOLTAGE (V)

RL - LOAD RESISTANCE (K)

Fig. 6 Forward Current vs. Forward Voltage

Fig. 7 Rise and Fall Time vs. Load Resistance

3.0

VF - FORWARD VOLTAGE (V)

RELATIVE RADIANT INTENSITY

2.5

1.0 0.9 0.8

2.0 IF = 50 mA IF = 20 mA 1.0 IF = 10 mA

1.5

0.7

0.5

0.0 -40

-20

20

40

60

80

0.6

0.4

0.2

0.2

0.4

0.6

TA - AMBIENT TEMPERATURE (C)

ANGULAR DISPLACEMENT

Fig. 8 Forward Voltage vs. Ambient Temperature

Fig. 8 Radiation Diagram

2011 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.7.0

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QRE1113, QRE1113GR Minature Reective Object Sensor

Recommended Solder Screen Pattern for GR option (for reference only)

1.1 LED (+) 1.0 0.8

2.8 Dimensions in mm

Taping Dimensions for GR option

Progressive Direction

2.00.05

4.0

1.5

0.25

1.75 5.50.05 12.00.3 4.75

3.73 8.0 1.98

General tolerance 0.1 Dimensions in mm

2011 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.7.0

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QRE1113, QRE1113GR Minature Reective Object Sensor

Reel Dimensions

2.2 0.5 178.0 1.0

60.0 0.5

13.0 0.5

9.0 0.5 12.0 0.15

Reow Prole
260C max. for 10 sec. max. 1C to 5C/sec 260C

Temperature (C)

Pre-heating 180C to 200C 1C to 5C/sec

220C 60 sec. max. above 220C

120 sec. max.

Time (seconds)
Note: Reflow soldering should not be done more than twice.

2011 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.7.0

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QRE1113, QRE1113GR Minature Reective Object Sensor

2011 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.7.0

www.fairchildsemi.com 8