NPN 2N2222 2N2222A PNP 2N2907 2N2907A SILICON PLANAR EPITAXIAL TRANSISTORS

The 2N2222 and 2N2222A are NPN transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. The 2N2222 is also suitable for d.c. and v.h.f./u.h.f. amplifiers . PNP complements are 2N2907 and 2N2907A . Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS Symbol

VCEO VCBO VEBO IC PD PD TJ TStg
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range @ Tamb = 25 @ Tcase= 25

Ratings
2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222

Value
40(1) 30 75 60 6 5 800 0.5 1.2 200 -65 to +200

Unit
V V V mA Watts Watts C C

(1) Applicable up to IC = 500mA

THERMAL CHARACTERISTICS Symbol

RthJ-a RthJ-c

Ratings
Thermal Resistance, Junction to ambient in free air Thermal Resistance, Junction to case 2N2222A 2N2222 2N2222A 2N2222

Value
350 146

Unit
K/W K/W

COMSET SEMICONDUCTORS

1/3

NPN 2N2222 2N2222A PNP 2N2907 2N2907A

ELECTRICAL CHARACTERISTICS
TC=25C unless otherwise noted

Symbol
ICBO ICBO IEBO ICEX VCEO VCBO VEBO

Ratings
Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector Cutoff Current

Test Condition(s)
VCB=60 V, IE=0V VCB=50 V, IE=0V VCB=60 V, IE=0V, Tj=150C VCB=50 V, IE=0V, Tj=150C VBE=3.0 V, IC=0 VCE=60 V, -VBE=3V

Min Typ Mx Unit

10 10 10 10 0.3 0.4 1 1.6 1.2 1.3 2 2.6 nA A nA nA V V V

Collector Emitter Breakdown IC=10 mA, IB=0 Voltage Collector Base Breakdown IC=10 A, IE=0 Voltage Emitter Base Breakdown IE=10 A, IC=0 Voltage
IC=0.1 mA, VCE=10 V IC=1 mA, VCE=10 V IC=10 mA, VCE=10 V

hFE

DC Current Gain

IC=10 mA, VCE=10 V

Tamb = -55
IC=150 mA, VCE=1 V (1) IC=150 mA, VCE=10 V (1) IC=500 mA, VCE=10 V (1) IC=150 mA, IB=15 mA IC=500 mA, IB=50 mA IC=150 mA, IB=15 mA IC=500 mA, IB=50 mA

VCE(SAT)

Collector-Emitter saturation Voltage (1)

VBE(SAT)

Base-Emitter saturation Voltage (1)

2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 40 30 2N2222 2N2222A 75 60 2N2222 6 2N2222A 5 2N2222 2N2222A 35 2N2222 2N2222A 50 2N2222 2N2222A 75 2N2222 2N2222A 35 2N2222 2N2222A 50 2N2222 2N2222A 100 2N2222 2N2222A 40 30 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222

Symbol
fT hfe

Ratings
Transition frequency Small signal current gain

Test Condition(s)
IC=20 mA, VCE=20 V f= 100MHz IC=1 A, VCE=2.0 V

Min Typ Mx Unit

3/3 MHz -

2N2222A 250 300 2N2222 3 2N2222A 2.5 2N2222

COMSET SEMICONDUCTORS

NPN 2N2222 2N2222A PNP 2N2907 2N2907A

Symbol
td tr CC CE rb,CC

Ratings
Delay time Rise time Collector capacitance Emitter capacitance Feedback time constant

Test Condition(s)
IC=150 mA ,IB =15 mA -VBE=0.5 V IE= Ie = 0 ,VCB=10 V f = 100kHz IC= Ic = 0 ,VEB=0.5 V f = 100kHz IC=20 mA, VCE=20 V f= 31.8MHz

Min Typ Mx Unit

10 25 8 25 150 ns pF pF ps

2N2222A 2N2222A 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222

(1) Pulse conditions : tp < 300 s, =2%

MECHANICAL DATA CASE TO-18

DIMENSIONS
mm A B D E F G H I L Pin 1 : Pin 2 : Pin 3 : 12,7 0,49 5,3 4,9 5,8 2,54 1,2 1,16 45 inches 0,5 0,019 0,208 0,193 0,228 0,1 0,047 0,045 45 Emitter Base Collector

Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear.

Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3