Sie sind auf Seite 1von 6

CURRICULUM VITAE

I.A.PALANI
Plot no: 117, New No: 2\328, 4th Cross Street, Kandaswamy nagar Palavakkam, Chennai Tamilnadu, India 600041. Phone number : +91-044-24485749(Res) +91-044-22575712(Off) Mobile :91-9444215452 Email- palaniia@gmail.com

Educations Credentials
SL. No 1. Qualification Ph.D (4th Year) (Laser assisted surface engineering of a-Si for Photovoltaics) Institution Precision Engineering and Instrumentation Laboratory,(PEIL) Department of Mechanical Engineering, Indian Institute of Technology Madras (I.I.T MADRAS) Anna University Year of Marks Passing Registered in CGPA: 8.8 July :2006 (In Progress)

2.

M.E (Manufacturing Engineering )

July 2006

79.1% (with Distinction)

3.

B.E(Production Engineering)

University of Madras

April 2004

79.5% (with Distinction & University Rank holder) 81%

4.

Higher Secondary

Tamil Nadu state board

March 2000

5.

SSLC

Matriculation

April 1998

77%

CURRICULUM VITAE

Research Experience: Position


Phd Research Scholar Half Time Teachning and Research Assistant (HTRA) National Doctoral fellow under AICTE Delhi Special Research Scholar

Department and Institute


Dept of Mechanical Engineering, IIT madras, India Dept of Mechanical Engineering, IIT madras, India Laser laboratory, Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka, Japan PEIL, Dept of Mechanical Engineering, IIT madras, India

Period
July 2006 - December 2006

December 2006 June 2008

July 2008- June 2009

National Doctoral fellow under AICTE Delhi

July 2009- till date

Ph. D research: Laser assisted surface engineering of a-Si for Photovoltaic applications In the recent technological advancement there is a rapid usage of semiconductors in many areas which includes from microchips to photovoltaic application such as solar cells. Conventionally, photovoltaic cells are made with a crystalline silicon wafers to achieve high efficiency. However the resulting cost is high and overall size is limited. An alternative costeffective approach may be to consider a thin-film poly-crystalline wafers combined with a laser annealing technique. Crystallization and grain growth technique can be used to improve the cell efficiency and lowering the cost of the solar cells and microchips. The surface modification of silicon by using a laser beam is of great interest. Among the laser annealing technique solid-state laser needs high attention due its advantages over excimer lasers. The Research study focuses on influence of wavelengths and beam profiles of a pulsed Nd :YAG laser on the formation of polycrystalline silicon (poly-Si) on a-Si thin film is investigated. Two sets of samples of amorphous-Silicon (a-Si) thin-films deposited on glass (a-Si/glass) and crystalline Si (a-Si/c-Si) substrates were treated with different laser-fluence values to produce a highly textured crystalline, which is suitable for photovoltaics. After the laser treatment, the films were analyzed by a Scanning Electron Microscope (SEM), the Raman spectroscopy technique, AFM, Photoconductivity and the resistance measurement technique. A theoretical simulation based on thermal modeling was performed to understand the mechanism of crystallization.
3+

CURRICULUM VITAE

Major key investigation of the Research work


1. Laser annealing of a-Si with three different harmonics of pulsed Nd: YAG laser 2. Flat-top beam profile annealing of amorphous silicon films with second and third harmonics of pulsed Nd:YAG laser : 3. Investigation on behavior of a-Si with Pico second laser annealing: 4. Laser annealing and subsequent laser nanotexturing of a-Si 5. Solid diffused Laser doping(SDLD) of a-Si and ZnO with Sb 6. Preliminary investigation on CO2 based laser annealing and LIBWE(laser induced backside wet etching) of silicon:

Academic Projects Done:


M.E (Manufacturing Engineering): Experimental study of hot cracking in welding of D9 alloy Summary: The D9 (Austenitic stainless steel) is used in fuel clad and wrapper application of fast breeder test reactor since it has high resistance to irradiation induced swelling and can withstand a temperature above 700k. This D9 is highly susceptible to hot cracking during welding during some variation in a solidification rate . The main aim of the project was to check the hot cracking susceptibility of the material using varestraint and trans varestraint test. In order to predict the effect of composition on hot cracking 7 heats of D9 were prepared by varying the composition and they were cold worked to 20%.. The different cracking parameters, such as Total Crack length, Maximum crack length, threshold strain and the Brittleness Temperature Range (BTR). The metallographic study were done to evaluate the effect of composition .Finally the composition were optimized based on different cracking criterion..

B.E (Production Engineering): Design and fabrication of industrial ball size separator Summary: The main objective of the project is to develop a setup to inspect and separate the ball-bearing balls (10,15,20mm) according to the size .The inspection done manually consume high inspection time but by using this setup the inspection time was considerably reduced and due to this the production cost will decrease. The pneumatic actuators the key components of the setup. The fabrication was made as per the design. Around 55-60 ball were separated per minute.

CURRICULUM VITAE Research Publications:


International Journal publications: [1] I.A.Palani, N.J.Vasa, M.Singaperumal, T.Okada Influence of laser wavelength and beam profile on Nd3+:YAG laser assisted formation of polycrystalline Si films, Thin solid films (Accepted 10.1016/j.tsf.2009.12.003). [2] I.A.Palani , Nilesh.J.Vasa , M. Singaperumal Crystallization and ablation in annealing of amorphous-Si thin-film on glass and crystalline-Si substrates irradiated by third harmonics of Nd3+:YAG laser: International Journal of material Science in semiconductor processing (2008), Vol 11, pp 107-116.
[3] N.J.Vasa, I.A.Palani, M.Singaperumal, T.Okada Influence of Nd3+:YAG Laser Beam Profiles on Annealing and Nano-Texturing of Amorphous-Silicon Thin Films, Transactions of the Materials Research Society of Japan (Accepted

[4] I.A.Palani , N.J.Vasa, S.Kanmanisubbu, J.Ramkumar & M.Singaperumal Laser based surface processing of engineering materials - state of art: International Journal of design and manufactuirng technologies ( July 2008), Vol 2, pp 1- 9 [5] I.A.Palani, N.J.Vasa, M.Singaperumal, T.Okada Investigation on laser-annealing and subsequent laser-nanotexturing of amorphous silicon (a-Si) films for photovoltaic application, Journal of laser micro and Nano Engineering (Revised and Submitted). International Conference publications: [1]. I.A.Palani, Nilesh.J.Vasa, M.Singaperumal, T.Okada Investigation on Solid Diffused Laser Doping (SDLD) of a-Si and ZnO for functional device application The 10th st th International confrence on laser ablation (COLA 09).Nov 21 -27 2009, Singapore. [2]. I.A.Palani, Nilesh.J.Vasa, M.Singaperumal, T.Okada Investigation on laserannealing and subsequent laser Nano texturing of amorphous silicon for photovoltaic application The 5th International congress on laser advanced material processing (LAMP 09). June29th to July 2nd 2009, Kobe, Japan. [3] I.A.Palani, Nilesh.J.Vasa, M.Singaperumal Investigation on effect of Nano and Pico Second laser pulse in annealing of amorphous silicon films by pulsed Nd3+:YAG laser 2nd International and 23rd All India Manufacturing Technology, Design and Research Conference (AIMTDR08) ,Dec 15-17th 2008,Chennai, India. [4] I.A.Palani , Nilesh.J.Vasa , M. Singaperumal Investigations on Laser Interaction in Annealing of Amorphous Silicon Films by Pulsed Nd:YAG Laser, 23rd ASPE (American Society for Precision Engineering) Meeting and 12th International Conference on Precision Engineering, October 19-24, 2008, Portland Marriott Downtown Waterfront Hotel, Portland, Oregon (USA) [5] I.A.Palani, Nilesh.J.Vasa, M. Singaperumal Investigations on ablation threshold in annealing of silicon films by pulsed Nd: YAG laser, International Conference on advances in manufacturing technology(ICAMT07), 6-8 Feburary 08,Indian Institute of Tecnology Madras,India. [6] I.A.Palani , Nilesh.J.Vasa , M. Singaperumal Investigation on Annealing of Silicon Films Using Pulsed Nd3+:YAG Laser, International Conference on Precision,Meso, Micro and Nano Engineering (COPEN07), 13th &14th December07,College of Engineering, Trivandrum.

CURRICULUM VITAE
[7] M.Singaperumal, Nilesh.J.Vasa, Palani.I.A Pulsed solid-state laser induced annealing of amorphous-Si thin-films on different substrates SPIE, OPTIFAB (2009) 11-14 May 2009,Rochester Riverside, New York, USA [8] Nilesh.J.Vasa, Palani.I.A, Kona.R, M. Singaperumal Development of optical gas sensor for emission monitoring , 9th International Symposium on measurements and quality control (9th ISMQC), 21st -24th November 2007, IIT Madras National Conference publications: [1] I.A.Palani, Nilesh.J.Vasa, M.Singaperumal, T.Okada Investigation on production of textured crystalline silicon films using solid state Nd3+:YAG laser for Photovoltaic application National conference on design and Manufacturing issues in automotive and allied industries , July 10-11,Chennai, India. [2] I.A.Palani, Nilesh.J.Vasa, M.Singaperumal, M.Highashihata, T.Okada Invetgstaion on super lateral growth in pi-beam annealing of amorphous silicon films using pulsed Nd3+;YAG laser Japanese Society of Applied Physics, Mar30th to April 4th 2009,Tskuba ,Japan [3] I.A.Palani, Nilesh.J.Vasa, M.Singaperumal, T.Okada Comparative investigation on lateral crystallization in annealing of a-Si films using second (532nm), third (355nm) and fundamental harmonics (1064nm) of pulsed Nd3+: YAG laser Kyushu university branch meeting of Applied Physics Society ,Nov 29-30,Miyazaki ,Japan [4] I.A.Palani , Nilesh.J.Vasa , M. Singaperumal Study on Feasibility of Pulsed Nd:YAG laser in Annealing Of Silicon Films , National Conference Of Research Scholars In Mechanical Engineering (NCRSME 07), 23rd -24th March 2007, IIT Kanpur. [5] Palani.I.A , V.Shankar, G.Sreenivasan, K.Subramanian ,Experimental study of Hot cracking in Welding of D9I alloy National conference on Advances in manufacturing and research Conference (Amara 06), 23rd March 2006, PSNA college Of Engineering ,Dindugul, Tamilnadu. [6] Palani.I.A , V.Shankar, K.S.Ramkumar , Experimental study of Hot cracking in Welding of D9I alloy,National Conference on contemporary approaches in Design and Manufacturing (CADAM 06),25th April 2006, A.C.college of Engineering and technology ,Karaikudi , Tamilnadu.

AWARDS AND CREDITS : 1. Awarded Kyushu university Friendship scholarship 2008-2009 to conduct Research study in Graduate School of Information Science and Electrical Engineering for a Period of One year(July 2008- June 2009). 2. Awarded National Doctoral Fellowship 2006-2007(NDF 2006-07) from All India Council for Technical Education (AICTE) 3. Awarded Half time Teaching and Research Assistantship (HTRA) from I.I.T Madras 4. Awarded university rank from University of Madras in B.E.(Production Engineering) 5. B.E curriculum project was selected under student Project Scheme from Tamilnadu State Council for Science and Technology and Rs 4000/- was awarded.

CURRICULUM VITAE
SOFTWARE EXPOSURE: Languages CAD tools Packages PERSONAL PROFILE: Date of Birth Sex Nationality Fathers Name Mothers Name Languages known Official addresses : : : : : : : 28-03-1983. Male. Indian. Dr.P.Iyamperumal. Mrs.M.Santhi Perumal. Tamil, English. Precision Engineering and Instrumentation Laboratory Department of Mechanical Engineering Indian Institute of Technology Madras Chennai, Tamilnadu India 600036. Phone no: +91 044 22575712/22575711 Visual basic 6.0, C Auto Cad 2004, Unigraphics Nx2 Matlab, Femlab

. REFERENCES Dr. Nilesh. J. Vasa Associate Professor and Head Department of Engineering Design IIT Madras, Chennai Tamilnadu, India 600036 Ph: (+91) 044 - 22574706/22575711 E-mail:njvasa@iitm.ac.in Prof. M. Singaperumal Dean (Administration), Head of the Lab Precision Engineering & Instrumentation Lab Department of Mechanical Engineering IIT Madras, Chennai Tamilnadu, India 600036 Ph: (+91) 044 - 22574678/22575711 E-mail: msingam@iitm.ac.in

Das könnte Ihnen auch gefallen