Super Fast Recovery Diode

RFUS20TM4S
Series Ultra Fast Recovery Dimensions (Unit : mm)
+0.3 0.1 +0.3 0.1 +0.2 0.1

Structure

Features 1)Ultra low switching loss 2)High current overload capacity 3)Cathode common single type

+0.4 0.2

Applications General rectification

(1)

(2)

(3)

Construction Silicon epitaxial planer

+0.1 0.05

Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average rectified forward current Forward current surge peak Junction temperature Storage temperature Io IFSM Tj Tstg

Conditions Duty0.5 Direct voltage

60Hz half sin wave, Resistance load, Tc=68C

Limits 430 430 20 100 150 -55to+150

Unit V V A A C C

60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 C

Electrical characteristics (Tj=25C) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal resistance VF IR trr Rth(j-c)

Conditions IF=20A VR=430V IF=0.5A,IR=1A,Irr=0.25IR junction to case

Min. -

Typ. 1.4 0.05 24 -

Max. 1.6 10 35 2

Unit V A ns C/W

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RFUS20TM4S

Data Sheet

Electrical characteristic curves

100 Tj=125 C FORWARD CURRENT : IF(A) Tj=150 C 10 Tj=25 C Tj=75 C 1

100000 Tj=150 C REVERSE CURRENT : IR(nA) 10000 Tj=125 C

1000 CAPACITANCE BETWEEN TERMINALS : Ct(pF) f=1MHz Tj=25 C

1000

100

100

Tj=75 C

10

Tj=25 C

0.1 0 500 1000 1500 2000 2500 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS

1 0 50 100 150 200 250 300 350 400 450 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS

10 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS

1500 T=25 C IF=20A n=20pcs

1000 T=25 C VR=430V n=20pcs 100 CAPACITANCE BETWEEN TERMINALS : Ct(pF)

400 Ta=25 C f=1MHz VR=0V n=10pcs

FORWARD VOLTAGE : VF(mV)

1400

REVERSE CURRENT : IR(nA)

1450

390

380

1350 AVE : 1373mV 1300

AVE : 49.0nA 10

370

360

AVE : 372.3pF

1250 1

1200 VF DISPERSION MAP

350

IR DISPERSION MAP

Ct DISPERSION MAP

300 RESERVE RECOVERY TIME : trr(ns)

30 T=25 C IF=0.5A IR=1A Irr=0.25IR n=10pcs

1000

ITS ABILITY OF PEAK SURGE FORWARD CURRENT : IFSM(A)

PEAK SURGE FORWARD CURRENT : IFSM(A)

250

25

200

20 AVE : 22.9ns 15

100

150

AVE : 183A

100 IFSM 50 8.3ms 0 1cyc

10

10

IFSM 8.3ms 8.3ms

1cyc. 0 trr DISPERSION MAP 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100

IFSM DISRESION MAP

1000

7 6 5 4 3 AVE : 0.93kV 2 1 0 AVE : 6.05kV

10

ELECTROSTATIC DISCHARGE TEST ESD(KV)

IFSM PEAK SURGE FORWARD CURRENT : FSM(A) time

TRANSIENT C/W) THAERMAL IMPEDANCE:Rth (

Rth(j-c)

100

10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100

C=200pF R=0

C=100pF R=1.5k

0.1 0.001

0.01

0.1

10

100

1000

ESD DISPERSION MAP

TIME : t(s) Rth-t CHARACTERISTICS

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2010.02 - Rev.A

RFUS20TM4S
70 D.C. 60 50 40 30 20 10 0 0 5 10 15 20 25 30 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 35 D=0.05 D=0.5 half sin wave D=0.2 D=0.1 D=0.8 30 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 25 20 35

0A 0V t T Io VR
D=t/T VR=350V Tj=150 C

Data Sheet

D.C. D=0.8 D=0.5

FORWARD POWER DISSIPATION : Pf(W)

half sin wave D=0.2 D=0.1 5 0 0 30 60 90 120 CASE TEMPARATURE : Tc(C) Derating Curve"(Io-Tc) 150 D=0.05

15 10

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2010.02 - Rev.A

Notice

Notes
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R1010A