MiniSKiiP

0
1-phase bridge rectifier +
3-phase bridge inverter
SKiiP 01NEC066V3
Features

Trench lGBTs

Robust and soft freewheeling

diodes in CAL technology

Highly reliable spring contacts for

electrical connections

UL recognised file no. E63532

Typical Applications*

lnverter up to 3,5 kVA

Typical motor power 1,5 kW

Remarks

Case temperature limited

to T
C
= 125C max.

Product reliability results are valid

for T
j
= 150C

SC data: t
p
6 s; V
GE
15 V;
Tj = 150C; V
CC
= 360 V

V
CEsat
, V
F
= chip level value
NEC
Absolute Maximum Ratings
T
s
= 25 C, unless otherwise specified
Symbol Conditions Values Units
IGBT - Inverter
V
CES
600 V
l
C
T
s
= 25 (70) C, T
j
= 150 C 12 (11) A
l
C
T
s
= 25 (70) C, T
j
= 175 C 12 (12) A
l
CRM
t
p
= 1 ms 12 A
V
GES
20 V
Diode - Inverter
l
F
T
s
= 25 (70) C, T
j
= 150 C 12 (12) A
l
F
T
s
= 25 (70) C, T
j
= 175 C 12 (12) A
l
FRM
t
p
= 1 ms 12 A
Diode - Rectifier
V
RRM
800 V
l
F
T
s
= 70 C 35 A
l
FSM
t
p
= 10 ms, sin 180 , T
j
= 25 C 220 A
it t
p
= 10 ms, sin 180 , T
j
= 25 C 240 As
l
tRMS
per power terminal (20 A / spring) 20 A
T
j
lGBT, Diode -40...+175 C
T
stg
-40...+125 C
V
isol
AC, 1 min. 2500 V
Characteristics
T
s
= 25 C, unless otherwise specified
Symbol Conditions min. typ. max. Units
IGBT - Inverter
V
CE(sat)
l
Cnom
= 6 A, T
j
= 25 (150) C 1,1 1,45 (1,65) 1,85 (2,05) V
V
GE(th)
V
GE
= V
CE
, l
C
= 1 mA 5,8 V
V
CE(TO)
T
j
= 25 (150) C 0,9 (0,7) 1,1 (1) V
r
CE
T
j
= 25 (150) C 100 (167) 134 (184) mC
C
ies
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 0,45 nF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 0,1 nF
C
res
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 0,05 nF
R
CC'+EE'
spring contact-chip T
s
= 25 (150 )C mC
R
th(j-s)
per lGBT 2,4 K/W
t
d(on)
under following conditions 20 ns
t
r
V
CC
= 300 V, V
GE
= -8V/+15V 25 ns
t
d(off)
l
Cnom
= 6 A, T
j
= 150 C 175 ns
t
f
R
Gon
= R
Goff
= 47 C 60 ns
E
on
(E
off
) inductive load 0,3 (0,2) mJ
Diode - Inverter
V
F
= V
EC
l
F
= 6 A, T
j
= 25 (150) C 1,3 (1,3) 1,6 (1,6) V
V
(TO)
T
j
= 25 (150) C 0,9 (0,8) 1 (0,9) V
r
T
T
j
= 25 (150) C 67 (83) 100 (117) mC
R
th(j-s)
per diode 3 K/W
l
RRM
under following conditions 11,2 A
Q
rr
l
Fnom
= 6 A, V
R
= 300 V 0,9 C
E
rr
V
GE
= 0 V, T
j
= 150C 0,2 mJ
di
F
/dt = 520 A/s
Diode - Rectifier
V
F
l
Fnom
= 15 A, T
j
= 25 C 1,1 V
V
(TO)
T
j
= 150 C 0,8 V
r
T
T
j
= 150 C 20 mC
R
th(j-s)
per diode 1,5 K/W
Temperature Sensor
R
ts
3 %, T
r
= 25 (100) C 1000(1670) C
Mechanical Data
w 21,5 g
M
s
Mounting torque 2 2,5 Nm
SKiiP 01NEC066V3 CONVERTER, INVERTER, BRAKE
1 16-02-2009 LAN by SEMIKRON
Fig. 1 Typ. output characteristic Fig. 2 Typ. rated current vs. temperature
Fig. 3 Typ. transfer characteristic Fig. 4 Reverse bias safe operating area
Fig. 5 Typ. Turn-on /-off energy = f (I
C
) Fig. 6 Typ. Turn-on /-off energy = f (R
G
)
SKiiP 01NEC066V3 CONVERTER, INVERTER, BRAKE
2 16-02-2009 LAN by SEMIKRON
Fig. 7 Typ. gate charge characteristic Fig. 8 Typ. thermal impedance
Fig. 9 Typ. freewheeling diode forward characteristic Fig. 10 Typ. input bridge forward characteristic
SKiiP 01NEC066V3 CONVERTER, INVERTER, BRAKE
3 16-02-2009 LAN by SEMIKRON
circuit
pinout, dimensions
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of component characteristics.
Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON
products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We
therefore strongly recommend prior consultation of our personal.
SKiiP 01NEC066V3 CONVERTER, INVERTER, BRAKE
4 16-02-2009 LAN by SEMIKRON