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IntroductiontoFET

EN1802 BasicElectronics

Contents
WhatisaFET? TypesofFET Howdoes d aFETwork? k? TypesofJFET OperatingModes Characteristics Comparison:JFETandBJT

WhatisaFET?
Athreeterminalsolidstatedevice SimilartoaBJTinappearance Invented dby b William illi Shockley Sh kl in i 1952 9 2

TypesofFET

JFET FET MOSFET

Whatisthedifferencebetweenthese twoFETtypes?
Difference is in the way their gate terminals are connected d to the h semiconductor. i d JFET Junction Field Effect Transistor
old: JUGFET, Junction Gate Field Effect Transistor Gate terminal is directly connected to one of the extrinsic semiconductor layers

MOSFET Metal Oxide Semiconductor Field Effect Transistor


old: IGFET, Insulated Gate Field Effect Transistor Gate terminal is electrically insulated from the semiconductor materials using a layer of silicon dioxide

Subtypes Categorizationaccordingto the h typeof fchannel h l

JFET
Nchannel Pchannel

MOSFET
Nchannel Pchannel

HowdoesaJFETwork?
WaterAnalogy

HowdoesaJFETwork?
Water Analogy Water control is done by y squeezing q g the hose. The two ends of the pipe/hose may be named drain and source. Hose is the channel. Controlling water flow by squeezing the hose represents the gate gates s action in a JFET. JFET Gate voltage changes the channel width. By y this the effective cross sectional area of the hose is varied. When channel width is reduced by the Gate Voltage, channel is choked and its current decreases and vice versa.

HowdoesaJFETwork?
Thechannelisanuninterrupted blockof semiconductor. Throughthechannel,currentcanflowfrom sourcetodrainordraintosource. CurrentdoesnothavetocrossthroughaPN junctioninthechannel. Thegateisconnectedtotheoppositetypeof semiconductortoformaPNjunctionfor controlpurposes.

PchannelJFET

NchannelJFET

PolarityConventions

OperatingModesoftheJFET
( )Switching (1) gMode AnOn/OffSwitch Whenthegatevoltageexceedsacertainvalue(athreshold value)thechannelgetscompletelychokedandcurrentstops.
Knownaspinchoffcondition. NowtheFETisoff.Thedraincurrentiszero. Thisisthecutoffstate.

Whenthechannelisfullyopen,itison.
MaximumdraincurrentflowsthroughtheFET. Anexternalcircuitshouldlimitthiscurrentinordertopreventdamage toFETfromovercurrent saturationstate

OperatingModesoftheJFET
(2) ( )Amplifying p y gMode GatebiasvoltageforthetwotypesofFETsshouldbeexactly oppositetoeachotherliketheirBJTcounterparts. Gatebiasvoltageisselectedsothatthechannelispartially open. open Channelwidthisthenincreasedordecreasedaccordingtothe inputsignalvoltagevariationsatthebaseterminal. InthismodetheFETisanamplifier. Itcanamplifyweaksignalsandmakethemstrong.

GeneralCharacteristics
Inallmodes, modes theinternalPNjunctionis reversebiased. DegreeofreversebiasisvariedtooperateFET indifferentmodes. There Th should h ldb bezerooutputthrough h hthe h gate connection. ForthisreasonJFET avoltagecontrolled device(BJT acurrentcontrolleddevice)

StaticCharacteristicsofaJFET
Consider an Nchannel JFET. First assume the gate voltage is zero. zero The channel is a wide open path for electrons to flow. But we need to apply a voltage across the channel (VDS) to get current flowing. Current should flow via a series resistor of correct value in order to ensure that the current limits are not exceeded. If the gate becomes more positive the depletion region d decreases and d more current t flows. fl If gatetosource (VGS) voltage exceeds 0.60.7V this PN junction becomes forward biased enough for a gate current to flow. flow But the gate is not designed to carry currents. Therefore this situation needs to be avoided.

StaticMutualCharacteristics
Controllingactionstartswhenweapplyanegative potentialtothegateterminalwithrespecttothesource. WhenavoltageisappliedassuchthisreversebiasesthePN junctionandthecurrentflowbetweenthesourceandthe draingetsreduced. Therefore,innormaloperationthePNJunctionisreverse biasedandonlyasmallleakagecurrentflowsthroughthe gate. Thedepletionregionincreaseinsizewhenthereversebias onthejunctionincreases. Whenthedepletion p Region g completely p yoccupies p theentire widthofthechannelthetransistoriscutoff. SincethisoccursatanegativeVGS ofNchannelJFETthe thresholdvoltage g isnegative. g Thisvoltage g isknownas pinchoffvoltage(VP).

CharacteristicCurves

ImportantObservations:VIcurve
Thecurveisgenerallydrawnforaconstant valueofdrainvoltage. Notethatchannel current(draincurrentId) increaseswiththeVGS nonlinearly.Therefore JFETiscalledaNonlinearDevice Device. MathematicalExpressionforthisbehavior

StaticOutput(Drain)Characteristics
In a commonsource circuit the output current is ID and the output voltage is VDS. To measure the output characteristics, characteristics a fixed gate voltage is applied and the DrainSource voltage is varied from 0 up to a maximum value. This is done in steps and the drain current is measured at each step. step Then ID is plotted against VDS using these readings to obtain one curve. We can observe the drain current rising with the drain voltage initially. initially At a certain limit the drain current starts to level off and we cannot get any further increase in drain current by increasing the drain voltage. This process is repeated for different values of gate voltage. When the gate voltage is kept constant at a more negative value and the plot is repeated we get a curve of similar shape but the draincurrent saturation occurs at a lower level.

Comparison
FET
Morecompact Consumeslesspower Utilizesasmallvoltage g tocontrol alargecurrent(voltage controlleddevice) Threeterminals:Gate(G), ( ), Source(S),Drain(D) NonlinearDevice Currentflowhappensthrough onetypeofsemiconductor (eitherPorN)

BJT
Lesscompact L Consumesmorepower Utilizesasmallcurrenttocontrol alargecurrent(current controlleddevice) Threeterminals:Base(B), Emitter(E),Collector(C) LinearDevice Currentflowhappens pp through g a PNjunction

References
UEN101ElectronicEngineeringLectureNotes byProf.Mrs.I.J.Dayawansa,Eng.A.T.L.K. Samarasinghe Prof.R.P.Thilakumara Samarasinghe, Prof R PThilakumara Millman andHalkias,IntegratedElectronics: AnalogandDigitalCircuitsandSystems Systems
Figureshave Fi h been b extracted dfrom f various i electronic l i andnonelectronicmaterialforthepurposeof teaching. teaching

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