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Breaking the Barriers: Data Center MLC-class SSD High-Performance, Consistently Low Latency and Extreme Write Endurance

SM843T Data Center Series

Today, more and more data centers are embracing extremely fast, energy-efficient IT systems and system components, to better support the client and server markets, along with the virtual and cloud enterprise infrastructure behind them.
IT management are driving todays business transformation initiatives, Big Data systems, VDI and other high-performance enterprise platforms in cloud infrastructures, rack-designed systems and virtualized environments. Increasingly, investments in solid state drive (SSD) technology are streamlining storage and computing capacity in the data center.

product overview

Samsung SM843T Raises the Bar on Data Center SSDs

Samsung has released the SM843T SSD, utilizing consumer 20nm-class MLC NAND Flash, which features consistently low latency, high write endurance, power-loss protection, coupled with a high-level of sustained writes (IOPS)all at capacitates up to 960GB at an extremely affordable solution. Here are more details about his new drives outstanding features:

Exceptional Low Latency and High Write Endurance


Unlike conventional SSD drives in its category, which provide very good performance at the onset, as more write operations are made to other SSDs, the latency and consistency QoS typically suffer. On the other hand, Samsungs SM843T SSD delivers an exceptionally consistent level of performance (99.9% reliable latency and QoS) over the life of the SSD at the same price category as other consumer-based MLC-based offerings. The life of a drive is generally determined by such factors as the type of applications and workloads that are being used and stored. The Samsung SM843T is optimized for sustained random read and write workloads up to 1,930 TBW (480GB) and up to 3,680 TBW with the 960GB capacity SSD which represents a 30x improvement of its predecessor. SM843T Data Center Series High-Read & Write Environments
Form Factor Capacity Host Interface MTBF Uncorrectable Bit Error Rate (UBER) Power Consumption (Active) Power Consumption (Idle) Read Latency (99.9% QoS) Write Latency (99.9% QoS) Random Read Random Writes Random Terabytes Written (TBW) Sequential Read Sequential Writes Sequential Terabytes Written (TBW) Physical Dimensions Weight *WPD = Drive Writes Per Day for 5 Years 2.5 inches 120/240/480/960 GB Serial ATA 3 (6 Gb/s) 2,000,000 hours 1x1017 3.4 W 300 mW 170 s <3 ms Up to 98,000 IOPS Up to 15,000 IOPS Up to 3,860 TBW Up to 2 WPD* Up to 500 MB/s Up to 370 MB/s Up to 20,000 TBW Up to 11 WPD* 100 x 70 x 7mm 56g

Enterprise Power-Loss Protection


Samsung SM843T SSDs are built with tantalum capacitors to protect all of your data in write cache in the case of a power failure. This enterprise-grade power-loss protection provides an added level of security to ensure that valuable write information is well protected against data corruption caused by power-loss.

High-Capacity SSDs Available


Samsung SM843T SSDs are available in several densities, allowing you to maximize your capacity with the same number of drive slots. The drive processes 15,000 IOPS on writes all the way up to 960GBover 7x the density over a 128GB SSD.

A Workhorse of a Drive
The Samsung SM843T is optimized for sustained random read and write workloads (98,000 IOPS/ 15,000 IOPS). This represents a 6x increase in write IOPS, in the same price category, as our last generation, award-winning PM830 SSDs.

For more information, visit: www.samsung.com/flash-ssd

Copyright 2013 Samsung Electronics Ltd. Samsung is a registered mark of Samsung Electronics Corp., Ltd. Specification and design are subject to change without notice. Non-metric weights and measurements are approximate. All data is correct at time of creation, Samsung are not liable for errors or omissions. All brand, product, service names, and logos are trademarks and/or registered trademarks of their respective manufacturers and companies are hereby recognized and acknowledged. Samsung Electronics Co., Ltd. Giheung Campus, 95, Samsung 2-ro, Giheung-Gu, Yongin, Gyeonggi-Do, Korea

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