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SuperFET
FCP11N60/FCPF11N60
General Description
SuperFETTM is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
TM
Features
650V @Tj = 150C Typ. Rds(on)=0.32 Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff=95pF) 100% avalanche tested
D
!
G! G DS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
!
FCP11N60 11 7 33
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)
(Note 2) (Note 1) (Note 1) (Note 3)
- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
125 1.0
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FCP11N60 1.0 0.5 62.5 FCPF11N60 3.5 -62.5 Units C/W C/W C/W
FCP11N60/FCPF11N60
Electrical Characteristics
Symbol Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS BVDSS / TJ BVDS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A, TJ = 25C VGS = 0 V, ID = 250 A, TJ = 150C ID = 250 A, Referenced to 25C VGS = 0 V, ID = 11 A VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 --------650 0.6 700 --------1 10 100 -100 V V V/C V A A nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 5.5 A VDS = 40 V, ID = 5.5 A
(Note 4)
3.0 ---
-0.32 9.7
5.0 0.38 --
V S
Dynamic Characteristics
Ciss Coss Crss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz VDS = 0V to 480 V, VGS = 0 V VDS = 25 V, VGS = 0 V, f = 1.0 MHz -----1148 671 63 35 95 1490 870 82 --pF pF pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 11 A, VGS = 10 V
(Note 4, 5)
VDD = 300 V, ID = 11 A, RG = 25
(Note 4, 5)
--------
34 98 119 56 40 7.2 21
ns ns ns ns nC nC nC
------
---390 5.7
11 33 1.4 ---
A A V ns C
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS = 5.5A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 11A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
FCP11N60/FCPF11N60
Typical Characteristics
10
10
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
150 C
10
10
25 C
-55 C
10
-1
10
-1
10
10
10
-1
10
1.0
0.8
VGS = 10V
0.6
10
0.4
VGS = 20V
10
150 C
25 C
* Notes : 1. VGS = 0V 2. 250 s Pulse Test
0.2
* Note : TJ = 25 C
o
0.0 0 5 10 15 20 25 30 35 40
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
6000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
VDS = 100V
10
5000
4000
Capacitance [pF]
Coss
3000
* Notes : 1. VGS = 0 V 2. f = 1 MHz
2000
Ciss
1000
Crss
2
* Note : ID = 11A
0 -1 10
0
10
0
10
10
15
20
25
30
35
40
45
FCP11N60/FCPF11N60
Typical Characteristics
(Continued)
1.2
3.0
2.5
1.1
2.0
1.0
1.5
1.0
* Notes : 1. VGS = 10 V 2. ID = 5.5 A
0.9
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
10
10
10
100 us
10
100 us 1 ms 10 ms
10 ms
10
0
DC
1 ms
10
100 ms DC
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-1
10
-1
10
-2
10
10
10
10
10
-2
10
10
10
10
12.5
10.0
7.5
5.0
2.5
0.0 25
50
75
100
o
125
150
FCP11N60/FCPF11N60
Typical Characteristics
(Continued)
10
Z (t), T h e rm a l R e s p o n s e
D = 0 .5
0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
* N o te s : o 1 . Z J C ( t) = 1 .0 C /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)
PDM t1 t2
J C
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Z (t), T h e rm a l R e s p o n s e
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
10
-1
0 .0 2 0 .0 1
* N o te s : o 1 . Z J C ( t) = 3 .5 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)
PDM t1
s in g le p u ls e
J C
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FCP11N60/FCPF11N60
VGS
DUT
3mA
Charge
VDS VGS RG
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
L VDS ID RG DUT
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD
tp
10V
FCP11N60/FCPF11N60
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
VGS ( Driver )
10V
I SD ( DUT ) IRM
di/dt
VDS ( DUT )
VSD
VDD
FCP11N60/FCPF11N60
Package Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) 3.60 0.10 (1.70) 4.50 0.20
1.30 0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
2004 Fairchild Semiconductor Corporation Rev. B, March 2004
FCP11N60/FCPF11N60
Package Dimensions
TO-220F
3.30 0.10 10.16 0.20 (7.00) 3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
2.76 0.20
9.40 0.20
Dimensions in Millimeters
2004 Fairchild Semiconductor Corporation Rev. B, March 2004
15.87 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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POP Power247 PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SILENT SWITCHER SMART START SPM
Stealth SuperFET SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET VCX
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I8