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BVDSS RDS(ON) ID
-30V 9m -14A
SO-8
S S
DESCRIPTION
The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S
Pb-free; RoHS-compliant
Rating -30 25 -14 -8.9 -50 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/
THERMAL DATA
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 50
Unit /W
08/10/2007 Rev.1.00
www.SiliconStandard.com
SSM6679GM
ELECTRICAL CHARACTERISTICS
(TJ=25 C unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
o
Min. -30 -1 -
RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
VDS=VGS, ID=-250uA VDS=-10V, ID=-14A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 25V ID=-14A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
2860 4580
SOURCE-DRAIN DIODE
Symbol VSD Parameter Forward On Voltage
2 2
Min. -
Typ. 48 46
trr
Qrr
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on Min. copper pad.
08/10/2007 Rev.1.00
www.SiliconStandard.com
SSM6679GM
280 150
T A = 25 C
240
T A = 150 o C
200
100
160
-5.0V -4.5V
120
50
80
V G = -3.0 V
V G = -3.0 V
40
0 0 1 2 3 4 5
0 0 1 2 3 4 5 6
14
1.8
I D = -11 A T A =25
12
1.6
I D = -14 A V G =-10V
Normalized R DS(ON)
1.4
RDS(ON) (m)
10
1.2
1.0
0.8
T j , Junction Temperature ( o C)
14
12
10
T j =150 o C
T j =25 o C
-VGS(th) (V)
1 0 -50
-IS(A)
0.2
0.4
0.6
0.8
1.2
1.4
50
100
150
T j , Junction Temperature ( o C)
Reverse Diode
08/10/2007 Rev.1.00
www.SiliconStandard.com
SSM6679GM
f=1.0MHz
12 10000
10
I D = - 14 A V DS = -24V
Ciss
C (pF)
1000
Coss Crss
0 0 20 40 60 80
100 1 5 9 13 17 21 25 29
100
1ms
10
Duty factor=0.5
0.2
0.1
0.1
0.05
100ms 1s
0.1
0.02
PDM
0.01
0.01
Single Pulse
t T
Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125oC/W
DC
VDS 90%
www.SiliconStandard.com
SSM6679GM
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.
08/10/2007 Rev.1.00
www.SiliconStandard.com