FDS4435

October 2001

FDS4435
30V P-Channel PowerTrench MOSFET
General Description
This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).

Features
8.8 A, 30 V RDS(ON) = 20 m @ V GS = 10 V RDS(ON) = 35 m @ V GS = 4.5 V

Low gate charge (17nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability

Applications
Power management Load switch Battery protection

D D SO-8

DD

DD D D

5 6 7

4 3 2 1

Pin 1 SO-8

G G S S S S S S
TA=25oC unless otherwise noted

Absolute Maximum Ratings

Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
30 25
(Note 1a)

Units
V V A W

8.8 50 2.5 1.2 1 55 to +175

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ , TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics
R JA R JA R J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)

50 125 25

C/W C/W C/W

Package Marking and Ordering Information

Device Marking FDS4435
2001 Fairchild Semiconductor Corporation

Device FDS4435

Reel Size 13

Tape width 12mm

Quantity 2500 units

FDS4435 Rev F1(W)

FDS4435

Electrical Characteristics
Symbol
BV DSS BV DSS TJ IDSS IGSSF IGSSR V GS(th) V GS(th) TJ RDS(on)

TA = 25C unless otherwise noted

Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)

Test Conditions
V GS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C V DS = 24 V, V GS = 25 V, V GS = 25 V, V GS = 0 V V DS = 0 V V DS = 0 V

Min
30

Typ

Max Units
V

Off Characteristics
21 1 100 100 1 1.7 5 15 22 19 50 24 20 35 32 3 mV/C A nA nA V mV/C m

On Characteristics

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance

V DS = V GS , ID = 250 A ID = 250 A, Referenced to 25C V GS = 10 V, ID = 8.8 A V GS = 4.5 V, ID = 6.7 A V GS = 10 V, ID = 8.8A, TJ =125C V GS = 10 V, V DS = 5 V, V DS = 5 V ID = 8.8 A

ID(on) gFS

A S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)

V DS = 15 V, f = 1.0 MHz

V GS = 0 V,

1604 408 202

pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge

V DD = 15 V, V GS = 10 V,

ID = 1 A, RGEN = 6

13 13.5 42 25

23 24 68 40 24

ns ns ns ns nC nC nC

V DS = 15 V, V GS = 5 V

ID = 8.8 A,

17 5 6

DrainSource Diode Characteristics and Maximum Ratings

IS V SD
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward V GS = 0 V, IS = 2.1 A Voltage

2.1
(Note 2)

A V

0.73

1.2

a) 50C/W when mounted on a 1in2 pad of 2 oz copper

b) 105C/W when mounted on a .04 in2 pad of 2 oz copper

c) 125C/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%

FDS4435 Rev F1(W)

FDS4435

Typical Characteristics
50 VGS = -10V 40 -6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.5V V 2 V GS=-4.5V -4.0V 1.8 1.6 -4.5V 1.4 1.2 -5.0V -6.0V -7.0V -8.0V 1 0.8 0 1 2 3 0 10 20 30 40 50 -V DS , DRAIN TO SOURCE VOLTAGE (V) -I D, DRAIN CURRENT (A) -10V

-ID, DRAIN CURRENT (A)

30 -3.5V 20 -3.0V 10

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

0.07 RDS(ON) , ON-RESISTANCE (OHM)

1.6 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -8.8A V GS = -10V 1.4

ID = -4.4A 0.06 0.05

1.2

0.04 TA = 125 oC 0.03 0.02 T A = 25o C 0.01 2 4 6 8 10

0.8

0.6 -50 -25 0 25 50 75 100 125 150 175 T J, JUNCTION TEMPERATURE ( oC)

-V GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Temperature.

40 25o C -IS , REVERSE DRAIN CURRENT (A) V DS = -5V -I D, DRAIN CURRENT (A) 30 125oC T A = -55 C
o

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

100 V GS =0V 10 T A = 125o C 1 25o C 0.1 -55o C 0.01

20

10

0.001

0 1.5 2 2.5 3 3.5 4 -V GS, GATE TO SOURCE VOLTAGE (V)

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDS4435 Rev F1(W)

FDS4435

Typical Characteristics
10 -V GS, GATE-SOURCE VOLTAGE (V) ID = -8.8A 8 -15V 6 CAPACITANCE (pF) 1500 V DS = -5V -10V 2000 CISS 2500 f = 1 MHz V GS = 0 V

1000 COSS 500 CRSS

0 0 6 12 18 24 30 Qg, GATE CHARGE (nC)

0 0 5 10 15 20 25 30 -V DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

100 100 s 1ms 10ms 100ms 1s 1 V GS = -10V SINGLE PULSE R JA = 125o C/W T A = 25o C 0.01 0.1 1 10 100 -V DS , DRAIN-SOURCE VOLTAGE (V) 10s DC 0.1 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 10 50

Figure 8. Capacitance Characteristics.

40

SINGLE PULSE RJA = 125C/W TA = 25C

30

20

10

0 0.001

0.01

0.1

1 t 1, TIME (sec)

10

100

1000

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power Dissipation.

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

1
D = 0.5 0.2

RJA(t) = r(t) + RJA RJA = 125 C/W

o

0.1

0.1 0.05 0.02 0.01

P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2

0.01
SINGLE PULSE

0.001 0.0001

0.001

0.01

0.1 t1, TIME (sec)

10

100

1000

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDS4435 Rev F1(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE

OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER

SMART START STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFET

VCX

STAR*POWER is used under license

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Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4