1N5817, 1N5818, 1N5819

Low drop power Schottky rectifier

Features

Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop Avalanche capability specified
K
DO-41

Description
Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO-41 these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. Table 1.
Symbol IF(AV) VRRM Tj VF (max)

Device summary
Value 1 40 150 0.45 Unit A V C V

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Characteristics

1N5817, 1N5818, 1N5819

Characteristics
Table 2.
Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt
1.

Absolute ratings (limiting values)

Value Parameter 1N5817 Repetitive peak reverse voltage Forward rms current Average forward current Surge non repetitive forward current Repetitive peak avalanche power TL = 125 C, = 0.5 tp = 10 ms Sinusoidal tp = 1 s, Tj = 25 C 1200 20 1N5818 30 10 1 25 1200 -65 to + 150 150 10000 900 1N5819 40 V A A A W C C V/s Unit

Storage temperature range Maximum operating junction temperature(1) Critical rate of rise of reverse voltage

1 dPtot < condition to avoid thermal runaway for a diode on its own heatsink. Rth(j-a) dTj

Table 3.
Symbol Rth (j-a) Rth (j-l)

Thermal resistances
Parameter Junction to ambient Junction to lead Lead length = 10 mm Lead length = 10 mm Value 100 45 Unit C/W C/W

Table 4.
Symbol IR (1)

Static electrical characteristics

Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25 C Tj = 100 C Tj = 25 C Tj = 25 C VR = VRRM IF = 1 A IF = 3 A 1N5817 0.5 10 0.45 0.75 1N5818 0.5 10 0.50 0.80 1N5819 0.5 10 0.55 0.85 Unit mA mA V V

VF (1)

1. Pulse test : tp = 380 s, < 2%

To evaluate the conduction losses use the following equations : P = 0.3 x IF(AV) + 0.090 IF2(RMS ) for 1N5817 / 1N5818 P = 0.3 x IF(AV) + 0.150 IF2(RMS ) for 1N5819

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Characteristics

Figure 1.

Average forward power dissipation Figure 2. versus average forward current (1N5817/1N5818)
PF(av)(W) 0.7
d = 0.1 d = 0.05 d = 0.2 d = 0.5

Average forward power dissipation versus average forward current (1N5819)

d = 0.1 d = 0.05 d=1

PF(av)(W) 0.6 0.5 0.4 0.3

0.6 0.5
d=1

d = 0.2

d = 0.5

0.4 0.3
0.2
T

0.2
tp

0.1

IF(av) (A)

d=tp/T

0.1

0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

tp d=tp/T IF(av) (A) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

Figure 3.

Average forward current versus ambient temperature ( = 0.5) (1N5817/1N5818)

Figure 4.

Average forward current versus ambient temperature ( = 0.5) (1N5819)

IF(av)(A) 1.2
Rth(j-a)=Rth(j-l)=45C/W

1.2 1.0
Rth(j-a)=100C/W

IF(av)(A)
Rth(j-a)=Rth(j-l)=45C/W

1.0 0.8 0.6 0.4

T

0.8 0.6 0.4

T

Rth(j-a)=100C/W

0.2
d=tp/T
tp

0.2

Tamb(C)
50 75 100 125 150
0.0 0

d=tp/T

tp

Tamb(C)
50 75 100 125 150

0.0

25

25

Figure 5.

Normalized avalanche power derating versus pulse duration

Figure 6.

Normalized avalanche power derating versus junction temperature

PARM(tp) PARM(1 s)
1

PARM(Tj) PARM(25 C)
1.2 1

0.1

0.8 0.6

0.01

0.4 0.2

0.001 0.01 0.1 1

tp(s)
10 100 1000

Tj(C)
0 25 50 75 100 125 150

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Characteristics

1N5817, 1N5818, 1N5819

Figure 7.

Non repetitive surge peak forward Figure 8. current versus overload duration (maximum values) (1N5817/1N5818)
8 7 6
Ta=25C Ta=75C

Non repetitive surge peak forward current versus overload duration (maximum values) (1N5819)

10 9 8 7 6 5 4 3 2 1

IM(A)

IM(A)

5 4 3

Ta=25C Ta=75C

Ta=100C
IM t

2
IM

Ta=100C

d=0.5

t(s)
1E-2 1E-1 1E+0

1 0 1E-3

0 1E-3

d=0.5

t(s)
1E-2 1E-1 1E+0

Figure 9.

Relative variation of thermal impedance junction to ambient versus pulse duration

Figure 10. Junction capacitance versus reverse voltage applied (typical values)
C(pF) 500
F=1MHz Tj=25C

1.0 0.8 0.6 0.4

Zth(j-a)/Rth(j-a)
(epoxy printed circuit board, e(Cu) = 35 mm, recommended pad layout)

200
1N5817
= 0.5

100
1N5818

50
= 0.2

1N5819

0.2

= 0.1 Single pulse

20

tp(s)
1E+1

=tp/T

tp

VR(V)
10 1 2 5 10 20 40

0.0 1E-1

1E+0

1E+2

1E+3

Figure 11. Reverse leakage current versus reverse voltage applied (typical values) (1N5817/1N5818)
1E+1 IR(mA)
Tj=125C
1N5818 1N5817

Figure 12. Reverse leakage current versus reverse voltage applied (typical values) (1N5819)
1E+1 IR(mA)
Tj=125C

1E+0
Tj=100C

1E+0
Tj=100C

1E-1

1E-1

1E-2
Tj=25C

1E-2
Tj=25C

VR(V)
1E-3 0 5 10 15 20 25 30
1E-3 0 5 10 15

VR(V)
20 30 35 40

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Characteristics

Figure 13. Forward voltage drop versus forward current (typical values) (1N5817/1N5818)
10.00 IFM(A)

Figure 14. Forward voltage drop versus forward current (typical values) (1N5819)
10.00 IFM(A)

1.00
Tj=100C Tj=125C

1.00
Tj=100C Tj=125C

0.10

Tj=25C

0.10

Tj=25C

0.01 0.0

VFM(V)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

VFM(V) 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

Figure 15. Non repetitive surge peak forward current versus number of cycles
30 25 20 15 10 5 IFSM(A)
F=50Hz Tj initial=25C

Number of cycles
0 1 10 100 1000

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Package Information

1N5817, 1N5818, 1N5819

Package Information

Epoxy meets UL94, V0 Band indicates cathode

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 5. DO-41 (Plastic) dimensions
Dimensions Ref.
D B

Millimeters Min. Max. 5.20 2.71

Inches Min. 0.160 0.080 1 Max. 0.205 0.107

A
C A C

4.07 2.04 25.4 0.71

B C D

0.86

0.028

0.034

Ordering information
Table 6. Ordering information
Marking Part number cathode ring Part number cathode ring Package DO-41 DO-41 Weight 0.34 g 0.34 g Base qty 2000 5000 Delivery mode Ammopack Tape and reel

Order code 1N581x 1N581xRL

Revision history
Table 7.
Date Jul-2003 04-Jul-2011

Document revision history

Revision 4A 5 Last update. Updated Table 5.: DO-41 (Plastic) dimensions. Changes

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