Department of Electrical Engineering M.Tech.

Admissions 2013-14

Abstracts of Projects (only for PA category)

Note:
1) This booklet contains abstracts of project for which RA positions are open. 2) These positions are other than Institute RA positions. 3) Institute RA work in various teaching labs of the department while Project RA

are assigned duties on specific project.

4) Institute RA is free to choose any topic in his/her specialization for M.Tech.

thesis but Project RA may have to work for their thesis in the area of project only.
5) If you are selected for Project RA position, you will be assigned a project from

your preferences and based on your performance in written test/interview. Once selected, it will not be possible to change from one project supervisor to another supervisor. Candidates will be asked about their preferences at the time of interview.

Project Investigator: Prof. Maryam Shojaei Baghini Title of the project: Analog, Mixed-signal and RF IC Development and Test for biomedical applications Desired specialization: EE 4/EE5 Abstract of the project: In this project we explore, design, implement and test energy efficient techniques for signal conditioning and data transmission from low-power sensors for biomedical applications. The ultimate goals is to develop a prototype to demonstrate effectiveness of the technique(s).

Project Investigator: Prof. Maryam Shojaei Baghini Title of the project: A Fast Turnaround, Hierarchical IP Design Methodology Desired specialization: EE 4 Abstract of the project: This project targets to shorten the memory IP development/rework cycle so that one can beat competition to the market.

Project Investigator: Prof. Maryam Shojaei Baghini Title of the project: Design and Qualification of a High Density Readout Chip for Silicon Strip Detectors Desired specialization: EE 4 Abstract of the project: Silicon detectors are being increasingly used for physics experiments and radiation monitoring instrumentation. These detectors need frontend electronics which is very closely integrated with the detector. Under this project, a chip for providing readout for silicon strip detectors will be developed.

Project Investigator: Prof. Maryam Shojaei Baghini Title of the project: Design and test of Equalizer and Built-in-Test schemes for Multi-lane Serial I/Os for Chipto- chip Communication Desired specialization: EE 4/EE5 Abstract of the project: The aim of this project is to explore and develop on-chip equalizers and (if required along with crosstalk cancellation techniques) for multi-lane serial IOs used for interfacing to highspeed DACs (digital to analog converters).

Project Investigator: Prof. Maryam Shojaei Baghini Title of the project: Soil Sensor with Integrated Electronics Desired specialization: EE 4/EE5 Abstract of the project: There are many ways to sense moisture content in soil. They range from a simple weighing of wet and dry soil samples to accurate measurement of hydrogen atoms using neutron probes and gamma rays. The aim of this project is to develop cost-effective novel sensors, packaging them with integrated/embedded electronics, and then networking them into systems that are affordable to small and medium scale Indian farmers. The hardware and software necessary for sensor interfacing, data logging and wireless networking will be put together with special consideration given to the overall cost while keeping the required accuracy. Another motivation for developing such sensors is to make it small using microsystems.

Project Investigator: Prof. Madhu Belur/Mani Bhushan Title of the project: Efficient data based approaches for real-time fault detection and diagnosis of Self Powered Neutron Detectors (SPNDs) Desired specialization: EE 2 Abstract of the project: Self Powered Neutron Detectors (SPNDs) are sensors that are widely used in nuclear power industry for estimating the neutron flux in a nuclear reactor. However, over a period of time, these detectors can develop faults and become un-usable due to a variety of reasons. Recently, we have developed data based models for SPNDs using Principal Component Analysis (PCA). These models can be used to detect a faulty SPND as well as estimate the corresponding true flux. In this work, we propose to implement the developed models in realtime on an existing nuclear power reactor to assess their computational requirements as well as their diagnostic performance. To deal with widely varying operations in a nuclear reactor, we propose to develop a basket of models. Implementing these strategies in real time will require development of computationally efficient algorithms. This work is in close collaboration with BARC and NPCIL.

Project Investigator: Prof. Debraj Chakrabarti/Prof. Madhu Belur Title of the project: Coordination and Cooperative Control of Distributed and Multi-Agent Systems Desired specialization: EE 2 Abstract of the project: This DST sponsored project aims to first develop algorithms for achieving cooperative control of multi-agent systems. Complex multi-agent systems will be considered where partial information exchange among the agents/subsystems occur over static or time varying information channels. Algorithms will be developed for the following objectives: (i) finite time cooperative control objectives where the various agents/subsystems need to achieve a common task in finite time; and (ii) antagonistic objectives where finite time control

algorithms for non-cooperative game like situations (e.g. group pursuit-evasion) will be developed (iii) computation of the minimal communication interconnection required to achieve various control tasks (iv) robust control objectives which minimize performance deterioration under loss of communication interchange, and (v) identification of bottlenecks in agent-agent and agent-to-base-station communication. The project also aims to develop a multi-UAV/UGV test bed. This comprises of a multiple unmanned aerial and ground vehicle testing facility. This testbed will be used to test the cooperative/antagonistic control algorithms developed above. It is proposed to fabricate five quadcopters and five ground vehicles for this purpose.

Project Investigator: Prof. M.P. Desai Title of the project: Reconfigurable computing using FPGA's Desired specialization: EE 4/EE5 Abstract of the project: FPGA's offer an interesting platform for implementing algorithms. This project concerns the use of high level compilation techniques for transforming high-level algorithm descriptions into VHDL and then mapping the VHDL on to an FPGA platform. Optimizations and characterizations of the FPGA implementations and their comparison with alternative implementations of the same algorithm are to be studied.

Project Investigator: Prof. M.B. Patil Title of the project: Simulation Centre for Power Electronics and Power Systems Desired specialization: EE 3 Abstract of the project: The project involves preparing course material for off-line and real-time simulation in the area of power electronics and power systems and also conducting training for course participants.

Project Investigator: Prof. Sibi Raj Pillai Title of the project: Resource Allocation is Multiuser Networks Desired specialization: EE 1 Abstract of the project: The project envisages the design and development of physical layer wireless schemes in multi-user networks. The project will involve considerable digital signal processing and telecommunications. Also experiments need to be carried out on the software defined radio testbed that we are developing.

Project Investigator: Prof. Shalabh Gupta Title of the project: Real time coherent receiver for next generation optical links using Analog CMOS Integrated circuits Desired specialization: EE 5/EE1 Abstract of the project: High-speed PCB design for testing of broadband communications integrated circuits. Desired qualifications: Experience with PCB design, good understanding of EM simulations, transmission line effects etc.

Project Investigator: Prof. Shalabh Gupta Title of the project: Data receiver for high-speed multi-lane serial I/O Desired specialization: EE 5/EE1 Abstract of the project: Circuit and Layout design for high speed serializer/deserializer integrated circuits in CMOS technology. Prior IC and layout design experience.

Project Investigator: Prof. Pradeep Nair Title of the project: Nanoscale bio/chemical sensors based on electronic/nano-electromechanical devices Desired specialization: EE 4 Abstract of the project: Biology and healthcare are often identified as the most promising fields for semiconductor industry beyond the CMOS era. Indeed, nanoscale FETs and MEMS based devices are increasingly being explored for applications like early detection of diseases, genome sequencing, hazardous chemicals, etc. In this project, we aim to understand the working principles of such devices and identify optimization schemes for further improvement. Note: This project requires significant numerical analysis/simulations with the option of experimental research being actively explored through collaborations.

Project Investigator: Prof. S. Chakrabarti Introduction: The detection of mid-wavelength and long wavelength infrared radiation (LWIR) is very important for many military, industrial and bio-medical applications. Presently, there is an increasing demand for this type of detectors, which preferably operates at ambient temperature and with low power consumption. A growing interest in space-based astronomy and terrestrialpollution monitoring is strongly motivating efforts toadvance the performance of single element detectors and focalplane arrays operating in the very-longwavelength infrared (VLWIR) band. At present, VLWIR detector technologyis dominated by mercury cadmium telluride (MCT) and extrinsic silicon blocked impurity band (BIB) detectors. Theternary alloy system MCT, however, faces several challengesfor VLWIR operation. These include the need to achieve very high alloy compositional control, as a small variation inthe cadmium mole fraction will change the material cutoffwavelength dramatically. Also, the very light MCT electroneffective mass results in excess dark current due to coherenttunneling in VLWIR gap material and efficient Auger recombination. This is due tothe abundance of band-gap-resonant, nonradiative transitionsin MCT which, together with tunneling, require low operatingtemperature in the VLWIR. BIB detectors also offer highVLWIR performance, but as extrinsic detectors, require evenlower operating temperatures due to high thermal ionizationrates.On the other hand, the quantum well infrared photodetectors (QWIP) also became technologically matured due to the development of GaAs and InP based lasers, LEDs and microwave circuitry. However, though these detectors have excellent array uniformity and can be used in high frequency applications, several other disadvantages undermine its quality. In these detectors, there is a requirement of

lower sensing temperatures than intrinsic detectors as well as light coupling. Lower sensitivity and detectivity and difficulty in very long wavelength detection also add to some its other disadvantages. Project I: In(Ga)As/GaAs QUANTUM DOT INFRARED PHOTODETECTORS Quantum dot infrared photodetectors (QDIP, have been actively studied in the last few years due to their potential for high operating temperature imaging, drawing from the already established quantum well infrared photodetector (QWIP) technology. However, it is hard to control the peak detection wavelengths in QDIPs due to the sensitivity of growth of StranskiKrastanov (SK) quantum dots on growth parameters. Quantum dots-in-a-well (DWELL) architecture in which, typically, InAs (or InGaAs) quantum dots are embedded in InGaAsGaAs quantum well or InGaAs-GaAs-AlGaAs double quantum well, provides a viable alternative to traditional QDIP designs. DWELL architecture allows better material growth characteristics and the ability to precisely and predictably control the peak wavelengths just by changing the composition and dimensions of quantum wells. Characteristics of DWELL detectors, such as responsivity, spectral response, dark current, photoconductive gain etc are highly dependent, and hence tunable, on the details of barrier designs and growth characteristics. In this project, in addition to DWELL, some novel QDIP designs will be explored. Validation of the designs will be carried out through growth by molecular beam epitaxy of these detectors, followed bymicroelectronic fabrication and subsequent FTIR characterization of these detectors. Project II: InAs/GaSb BASED TYPE II SUPERLATTICE DETECTORS Type II InAs/GaSbsuperlatticeshave attracted a lot of attention for the application in both LWIR and VLWIR regimes and now appear to be a possible alternative to the state-of-the-art MCT technology.Type IIInAs/GaSbsuperlattice photodiodes are reported to have ahigher uniformity across a large area, a higher accuracy incutoff wavelength control, and the robustness of III-V materialover MCT technology. It also exhibits a higher optical efficiency and abroadband spectrum, and operates in the photovoltaic mode reducing the noise contribution. The demonstration of veryhigh quantum efficiency type II superlatticephotodetectors at 11 mcutoff wavelengthhas confirmed the potential of this material system. However, some specific technological problems at long and very long cutoff wavelengths, limits the performance of this material system. At these long wavelength regimes, the system suffers from high dark current level and low dynamic differential resistance. This creates difficulties in matching the high impedance requirementsof commercially available readout integrated circuits designed for shorter cutoff wavelength detectors. The present project is to address these technological setbacks and fabricate high performance based type II InAs/GaSbsuperlattice IR detectors.

Project Investigator: Prof. V. Ramgopal Rao Project title: Center of Excellence in Nanoelectronics Desired specialization: EE4 (Microelectronics) Abstract of the project: The project, Center of Excellence in Nanoelectronics (CEN) - phase II funded by DeitY, Government of India, has the following deliverables. Ph. D. opportunities are available in these areas. 1. Novel MOSFET Structures for Sub 0.5 V Supply Voltage Operation: CMOS technology has scaled down from micro-meter feature sizes to the nano scale regime in order to achieve lower power and higher performance devices and circuits. Device geometries have been aggressively scaled with the gate length (LG), gate dielectric thickness (Tox) and junction depth having been decreased by about three orders of magnitude. For lower OFF current (IOFF), a better gate control of the channel is needed in the OFF state. In order to meet the ON current (ION) requirements, the threshold voltage (VTH) needs to be scaled with VDD. However, IOFF increases exponentially with VTHreduction. For this reason, it is desirable to explore device options that give rise to a sub-threshold swing value below the theoretical limit of 60 mV/dec. In a conventional MOSFET, SS is a nonscalable parameter and minimum subthreshold swing (SSmin) is 60mV/dec at room temperature. In order to limit IOFFwhile scaling down VTH, it is important to look for new device structures that achieve a sub-threshold swing value below 60 mV/dec. Of several new device architecutres proposed recently, only Tunnel FET and Impact ionization - MOSFET promise a SS less than 60mV/dec and improved short channel performance. The group at IIT Bombay has come up with new device architectures to improve the performance of tunnel FETs.

2. Spin-Transistor Design and Fabrication: The Information Technology (IT) revolution has been powered by the relentless shrinking of the MOS field- effect-transistor (FET) switch the basic building block of information processing in digital systems. This, in turn, enabled higher transistor densities and doubled computing power every two to three years, a phenomenon dubbed Moores Law. CMOS scaling is, however, expected to run into fundamental physical obstacles over the next decade. One way to circumvent this would be a fundamental shift in the scaling paradigm: to functional scaling from the currently favored dimensional scaling approach. The hope here is that we can achieve more powerful devices and circuits by leveraging novel physics without necessarily miniaturizing them. Spintronics is a promising candidate for this new paradigm. We think that the spin of electrons, hitherto redundant in semiconductor devices, could enable us to add functionality to existing devices, or conceive of entirely novel ones: researchers now at IIT-Bombay have made pioneering contributions in both directions. Practically, this would entail the integration of phenomenology from the field of magnetism which is predicated entirely on the electron spin with that of semiconductors. In particular, the electrical injection and detection of spin-polarized current into a semiconductor from/to a ferromagnetic source/drain is a feature common to many spintronic device proposals: to realize this in practically useful magnitudes has proved a challenge and here again,

researchers now at IIT Bombay have been among the pioneers. In the recent past, aboveroom-temperature spin polarization has been demonstrated in silicon by groups at the University of Twente in the Netherlands and the Naval Research Laboratory in the US. This is a very promising development for the field, but the measurement geometry used in these experiments does not readily lend itself to device applications. We propose to focus on spin-based device implementation. In this activity, we propose to design and fabricate a spin transistor, i.e. a three-terminal spin-valve device for electrostatically gated spin injection and detection in semiconductors.

3. Novel memory devices and reliability of memory devices: Flash memories are nonvolatile memories used for both code and data storage. Scaling of floating gate flash devices, which are MOSFETs with a SiO2-polySi-SiO2-polySi gate stack, has resulted in significantly enhancing the performance of mobile communication and computing devices like mobile phones and laptop computers. However the scaling limits discussed in the previous two activities are also concerns for flash memory devices. On the one hand a thorough understanding is required of the mechanisms of degradation of the flahs memory performance and at the same time novel memory technolgies should be developed to address the scaling challenges. Under this activity, we would be investigating (i) reliability of scaled floating gate and charge trap flash memories, (ii) graphene floating gate flash memory and (iii) resistive RAM memory. The group works on modeling, design, fabrication and characterization of memory devices.

4. GaN Based High Electron Mobility Transistors: High power and high speed transistors are essential for many RF applications. Wide bandgapGaN based high electron mobility transistors (HEMTs) have become a major area of research in this regard. There is a world wide research activity going on to increase the performance of conventional HEMTs as well as looking for new devices with exotic characteristics suitable for futuristic applications. GaN/AlGaNheterostructure provides a suitable structural inversion asymmetry (SIA) with proper polarization for high carrier density (high 1012 cm-2) in two dimensional electron gas (2-DEG) suitable for very high current drive (~1A/mm) and power density (>10 W/mm). A single GaN HEMT can replace tens of GaAs transistors in operation and power level, which are prevalent in current technologies. GaN HEMTs naturally lend to higher efficiency at a lower cost and better radiation hardness.

5. Next Generation Printable Organic Semiconductors based on Conjugated Polythiophenes with High Mobility, n-dopable and Improved Air Stability: It is expected that organic semiconductors would have a considerable share of the future of semiconductor market. However there are some issues with the present organic semiconductors and anyone who can overcome these issues will be leading the explosion in commercial aspects of devices based on organic semiconductors. Most promising materials at present for printable electronic applications are based on regioregularpoly(3-hexylthiophenes) (P3HT). Though the mobilities as high as around 1 cm2/Vs have been achieved, stability towards air and moisture still remains one of the major challenges. Another challenge is to design new materials for n-type semiconductors. We are exploring solutions to these issues and will come out with next generation of materials which will be printable, air stable, can be n-doped and will have reasonably good mobility's.

6. Nano-Electro-Mechanical-Systems for Sensing Applications: The objective is to build a sensitive piezo-cantilever platform for electronic nose applications. The work involves micro/nano-fabrication of sensitive piezo-cantilever arrays and a selective functionalization of the individual cantilever surfaces for reaction with the analyte molecules. The resultant surface stress will be analyzed using electrical transduction. The technology will be developed with an objective to build commercial applications in the areas of healthcare & security.

7. Microfluidic Flow Cytometer: Flow Cytometry is the measurement of physico-chemical properties of cells in biological sample. Typically the sample flows through a glass capillary and laser light scatters off the cells. The scattered light as a function of angle and wavelength gives information about the cell population. Bench-top flow cytometers are routinely used today for molecular biology, disease diagnostics, immunology, genetics and environmental monitoring. Entry level systems use a single wavelength with forward and side scattering detectors while more complex protocols use multi-color instruments with imaging capabilities. Over the last decade, there have been several international reports on using microfluidics to build a simple low-cost flow cytometer system. A portable handheld flow cytometer would have the advantage of using small sample volume and can be carried into the field for point-of-care applications such as CD4 Tlymphocyte counting of whole blood samples to detect HIV. Whole blood analysis can also be used to detect leukemia and malaria. An India-based biotech company, ReaMatrix, has recently developed ``dried kits suitable for flow cytometry in the field. We would like to design and fabricate a low-cost microfluidic flow cytometer with integrated optical detection and appropriate electronics. The devices will be fabricated using Hot Embossing technique on thermoplastic polymers such as polycarbonate (PC) and polymethylmethacrylate (PMMA). This portable lab-on-chip system will be targeted for analysis of blood samples in point-of-care (POC) clinical applications.

8. Soil Sensor with Integrated Electronics: There are many ways to sense moisture content in soil. They range from asimple weighing of wet and dry soil samples to accurate measurement ofhydrogen atoms using neutron probes and gamma rays. The aim of thisproject is to develop cost-effective sensors, packaging them withintegrated/embedded electronics, and then networking them into systemsthat are affordable to small and medium scale Indian farmers. Specifically, we will consider moisture and temperature sensors becausethey are beneficial in drip and spray irrigation. We propose to developpackaging techniques that pay special attention to problems faced in theIndian situation. The hardware and software necessary for networking themwill also be put together, again, with special consideration given to theoverall cost while keeping the accuracy level well acceptable. Anothermotivation for developing such sensors is to make it small using microsystems.

Project Investigator: Prof. Subhasis Chaudhuri Project title: Advanced methods for the analysis of remote sensing images acquired by last generation satellite systems (Phase - III) Desired specialization: EE1 Abstract of the project: In this project we would develop advanced techniques for classification and change detection on very high geometrical resolution (VHR) multispectral optical images. Novel techniques will be implemented for the integration of time series of data acquired by systems with different spatial resolution and revisit time. We will exploit the developed techniques for new applications related to environmental monitoring and land surveillance with VHR data. There will be transfer of technology of the developed methodologies to real application scenarios. The methodologies that will be developed under this project include:

Primitive feature extraction form high resolution optical and SAR images Land use classification and change detection using high resolution optical and SAR images Change detection using time series remote sensing images Analysis of multi-spectral optical and multi-frequency SAR images

Project Investigators: Prof PC Pandey, Prof V Rajbabu, Prof S Chaudhuri, Prof P Rao, Prof Sharat Chandran Project Title: National Programme on Perception Engineering Desired specialization: EE1 (Communication), EE5 (Electronic Systems) Topic 1) Speech training aid (PCP/VR) Objective: Providing a visual feedback of articulatory efforts involved in speech production to assist in the acquisition of speech production despite a lack of auditory feedback. Required background: Signal processing, speech processing, communication, biomedical engineering, instrumentation. Topic 2) Speech perception aids (PCP) Objective: signal Signal processing in a hearing aid to compensate for various distortions associated with sensorineural hearing loss to improve speech perception. Required background: Signal processing, speech processing, communication, biomedical engineering, instrumentation. image processing,

Topic 3) Haptic system for analyzing motor disorders (SC) Objective: Developing a haptic system for interacting with soft, virtual objects to analyze the tremors which would give an account of the amount of vibrations in the movement of the hand of the subject, for application in early detection, progress analysis, and recursion avoidance of various nervous disorders. Required background: signal processing, communication, biomedical engineering, instrumentation. 1. Speech Training Aid (PCP/VR) Most children with severe to profound hearing impairment do not develop speech due to the lack of the auditory feedback of their own speech and this impairment becomes a handicap in developing language skills. A speech training can provide visual feedback of articulatory efforts involved in speech production to help a hearing-impaired child in speech and language acquisition. The major challenges are (i) signal processing for getting the information on the articulatory efforts from the speech signal, (ii) visual display of the information in a manner that helps in correcting the articulatory errors without straining the perception process, and (iii) evaluation of the effectiveness of the training system and devising methods for fine tuning the system for requirements of the individual learner. The estimation of the vocal tract shape involves speech processing based on a model of the oral cavity as a concatenation of several sections of variable cross-sectional areas and the processing gives ratios of these areas, using Wakita's LPC based method. The earlier methods work only during steady-state vowel segments and not during the consonantal segments, show a high level of variability during steady state vowels, and the estimates vary with speakers. Work by our group has resulted in estimation of the articulatory efforts during stop consonants and in improving the consistency of the estimation.

PC Pandey and MS Shah, IEEE Trans. Audio, Speech, Language Process., vol. 17(2), pp.
277-286, 2009. KS Nataraj, Jagbandhu, PC Pandey, and MS Shah, Proc. National Conference on Communications 2011 (NCC 2011), Bangalore, India, paper SpPrII.4. Jagbandhu, KS Nataraj, and PC Pandey, Proc. 13th Annual Conference of the International Speech Communication Association (Interspeech 2012), Portland, Oregon, September 9-12, 2012, paper no. 497. Further work in this area will involve (i) estimation of the vocal tract shape for fricative and nasal sounds, and (ii) improving the consistency of vocal tract shape estimation by estimation of time-varying area of lip opening during speech utterances. 2. Speech Perception Aids (PCP) The objective is to develop speech processing techniques for improving perception by persons with sensorineural hearing impairment and also by persons with normal hearing under adverse listening conditions. The following are the major problems faced by most of the hearing-impaired listeners, particularly those with sensorineural loss: i) Frequency-dependent increase in hearing thresholds (particularly at higher frequencies), severe reduction in dynamic range of hearing (due to increase in hearing threshold levels without any corresponding increase in upper comfort levels), and abnormal growth of lodness.

ii) Reduction in perception of weak speech phonemes due to increased intra-speech spectral and temporal masking. iii) Increased masking effect of noise in the listening environment. A partial solution to the first problem is available in most of the modern hearing aids, while the solutions to the other problems are under research. Our group has earlier developed two methods for reducing the effects increased intra-speech spectral masking: Binaural dichotic presentation using a pair of perceptually balanced comb filters for persons with moderate bilateral loss. Ref. P.N. Kulkarni, P.C. Pandey, and D.S. Jangamashetti, "Binaural dichotic presentation to reduce the effects of spectral masking in moderate bilateral sensorineural hearing loss", Int. J. Audiology, vol. 51(4), pp. 334-344, April 2012. Multi-band frequency compression for monaural presentation. Ref.: P.N. Kulkarni, P.C. Pandey, and D.S. Jangamashetti, "Multi-band frequency compression for improving speech perception by listeners with moderate sensorineural hearing loss", Speech Communication, vol. 54(3), pp. 341-350, March 2012. The test results have shown significant improvement in speech perception. Further research will involve developing the techniques for reducing the effects of increased intra-speech temporal masking for improving the perception of transient parts of speech, and integration of the techniques with techniques for compensating for frequency-dependent increase in hearing thresholds and decrease in dynamic range. 3. Haptic System for Analyzing Motor Disorders (SC) Our earlier haptics related work has involved developing (a) interface through a pointbased force rendering interface, (b) a haptic based game that involves playing snooker through haptic interface, and (c) theoretical analysis of Weber sampling of haptic signals. We are currently working on (a) distance field based object reconstruction from haptic data, (b) evaluation with haptic texture rendering, high frequency (texture) component generation, and rendering of haptic force, (c) reconstruction of object with varying stiffness and rendering of surfaces from point cloud data, and (d) scaling (zooming in and out) of objects during haptic rendering and rendering of deformable objects. As a continuation of the earlier and ongoing work in haptics and as an application with a significant societal impact, it is proposed to develop a haptic system for analyzing the motor disorders in human subjects. The system will be capable of interacting with soft, virtual objects to measure the tremors which would give an account of the amount of vibrations in the movement of the hand of the subject. Such type of system would help in early detection, progress analysis and recursion avoidance of various nervous disorders like that of Parkinsons disease or numbness of fingers.