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Web Site: www.ijaiem.org Email: editor@ijaiem.org, editorijaiem@gmail.com Volume 2, Issue 5, May 2013 ISSN 2319 - 4847
Optical Properties of GeSe4, GeSe4 Te0.01 and GeSe4 Te0.03 thin films
Raad Saied Abed1, Hanaa Saleh Sabaa2, Farah Joawd Khathim 3
1,2,3
ABSTRACT
This includes the preparation of glass substrates, followed by the preparation of GeSe4 alloy then GeSe4 doping with Te in different compositions using vacuum evaporation method after that measure the optical properties before and after doping with Te with annealing isothermal. To measure the optical properties used visible spectro-photometer device type (uv-880 spectrometry) to measure (absorbance and transmittance spectrum) in the range (300-900)nm for GeSe4 , GeSe4 Te0.01 and GeSe4 Te0.03 thin films. In semiconductors fabrication many electronic devices depended on the energy gap, such as solar cells and detectors and optical diodes.
1. Introduction:
The term of "thin film" is used to describe a layer or several layers of atoms for certain substance whose thickness ranges between (10nm) and less than or equal (1m).The physical characteristics of the thin films are different from those of their characteristic materials in their bulk [1]. Among the amorphous chalcogenide alloys, mostly, selenium (se) based materials are preferred because it is unique property of reversible phase transformation between the amorphous and crystalline phases. The choise of (se) based alloys is due to the device application like rectifier, photocells and other application [2]. But pure selenium has disadvantages such as it is low photo-sensitivity and also selenium is not stable in standard operational conditions because its glass transition is close to room temperature. These problems can be overcome by alloying selenium with tellurium, which gives higher photo-sensitivity and smaller aging effects as compared to pure selenium [3]. However, these alloys are found to have some significant problems. The two serious problems are the limited reversibility and low glass transition. These problems can be removed by adding a third element as a chemical modifier in se-Te alloys [4].
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IR IO
.(1)
where IR : is the intensity of reflected light at the interface where the refractive indices are different. and Io: is the intensity of incident light at the interface where the refractive indices are different[16]. b. Transmission (T): the transmission coefficient is defined as the ratio of transmitted power to incident power, T= and given by [17]: T=
IT IO
.(2)
IT ) Io
..(4)
where IT: is the intensity of the transmitted light through the material and Io : is the incident intensity of light[16]. Optical constant: a. Refractive index (n) and Extinction coefficient (k): the refractive index can be calculated by using equation depending on the reflectance (R) and extinction coefficient (k) as in the following equation [16] :
n 1 (n 1) 2 k 2 R= ..(5) n 1 (n 1) 2 k 2
and the extinction coefficient (k) can be calculated from the relation :
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4
1 d [ L(h )] L(h ) dx
2.303 * A t 1 ) T
(6)
b. Absorption coefficient (): Absorption coefficient [(h)]can be defined as the relative rate of decrease in light intensity [L(h)] along it is propagation path[18]:
.(7)
But
.(8)
A=log (
(9)
and t : thickness of thin film. c. Real and Imaginary part of dielectric constant 1and 2 : The dielectric constant represents the ability of material to polarization, to obtain the dielectric constant[20]: = 1+ i2 (10) where 1and 2: are the real and imaginary parts of the dielectric function respectively. 1 = n2-k2 ..(11) , 2=2nk (12) n : refractive index , k : extinction coefficient.
and the optical constants calculated from transmittance and absorbance spectrum at normal incidence over the range (300-900)nm for GeSe4 , GeSe4 Te0.01 and GeSe4 Te0.03 thin films. Refractive index (n) is calculated using equation : n=
1 R 1 R
(14)
and extinction coefficient (k) from equation (6) and the dielectric constant can be calculated in its real and imaginary parts
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GeSeTe0.01
50
20Sec 30Sec
T%
40 30
60 40 20
40Sec
40Sec
20
10
0 400
Fig.(1) 2- Absorbance measurements: it is possible to separate three distinct regions in the absorption edge spectrum of amorphous semiconductors. The first is the weak absorption tail, which originates from defects and impurities. (Existence of the weak absorption tails in the band gaps of the films under study may be attributed to the amorphous nature, and randomly distributed impurities in the films) second is the exponential edge region, which is strongly retated to the structural randomness of the amorphous compound. Third is the high absorption region from which optical energy gap width can be determined from figure (2) illustrates absorbance spectrum for GeSe4, GeSe4 Te0.01 and GeSe4 Te0.03 thin films as a function of wavelength, the prepared films show high absorption at visible spectrum and low absorption at the near infrared region and absorption increase with increasing (Te) concentration and time annealing for all thin films[22,23].
GeSe
4.3
GeSeTe0.03
4.2 3.9
3.7
GeSeTe0.01
3.6 3.3
20Sec 30Sec
3.4
40Sec
1.8 1.5 400 500 600 700 wav e 800 900 1000
500
600
700 wave
800
900
1000
Fig.(2) 3- Reflectance measurements: from figure(3) illustrates reflectance spectrum for GeSe4 , GeSe4 Te0.01 and GeSe4 Te0.03 thin films as a function of wavelength. The prepared films show high reflection at visible spectrum and low reflection at the near infrared region and reflection increase with increasing (Te) concentration and time annealing for all thin films[23].
GeSeTe0.03 1 0.95 0.9 0.85 0.8 400
R
1 0.95
GeSeTe0.01
1 0.8
GeSe
20Sec
R
30Sec 40Sec
500
600
700 wave
800
900 1000
500
600
700 wave
800
900
1000
500
600
700 wave
800
900
1000
Fig.(3) 4- Absorption coefficient measurements: Analysis of optical absorption spectra is one of the most productive tools understanding and developing the band structure and energy gap of both crystalline and amorphous non-metallic material, the threshold at the low energy side of optical absorption spectra is called optical absorption edge and corresponds to separation in energy between the bottom of the conduction band and the top of the valance band. Absorption coefficient is calculated by using equation (8), figure(4) show the variation of() with wavelength, from the figure the absorption coefficient() increases at visible spectrum and low absorption coefficient at the near infrared region and absorption coefficient increase with increasing (Te) concentration and time annealing for all thin films.
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GeSe
20Sec
500
600
700 WAVE
800
900
1000
500
600
700 wave
800
900
1000
0 400
500
600
700 w ave
800
900 1000
Fig.(4) 5- Optical constants : Extinction coefficient (k): Extinction coefficient is measured by using equation (6), figure(5) illustrates variation of(k) as a function of wavelength, extinction coefficient increase with increasing wavelength in visible and near infrared region which is increased with increasing the tail states width that resulted the increasing tellurium concentration and time annealing[23].
GeSeTe0.03
3.5E+14 3E+14 2.5E+14 2E+14
k
3.5E+14 3E+14 2.5E+14 Ge SeTe0.01
2.5E+14 2E+14 GeSe
500
600
700 wave
800
900
1000
500
600
700 w ave
800
900
1000
500
600
700 wave
800
900
1000
Fig.(5) Refractive index (n): Refractive index can be determined using equation (14), from figure(6) it is clear that refractive index increase with increasing wavelength (600nm) and decrease in higher wavelengths, and (n)increases with increasing tellurium concentration and time annealing, this may be due to the change in crystallite size, stoichiometry and internal strain and because the decreasing of optical band gap with increasing Te concentration[22,23].
GeSeTe0.03 90 80 70 60 50 40 30 20 10 0 400
GeSe4Te 80 70 60 50 40 30 20 10 0 400
GeSe 80 70 60 50 40 30 20 10 0 400
500
600
700 wave
800
900
1000
500
600
700 w ave
800
900
1000
500
600
700 wave
800
900
1000
Fig.(6) Dielectric constant: The complex dielectric constant is fundamental intrinsic material property. The real part of it is associated with the term that how much it will slow down the speed of light in the material and imaginary part gives that how a dielectric absorb energy from electric field due to dipole motion. The real and imaginary parts of the dielectric constant were determined using the relation (11,12) respectively, so that values of (1,2) depend on refractive index (n) and extinction coefficient(k)[22], from figure (7,8) show the variation of real part of dielectric constant 1 and imaginary part of dielectric constant 2 with wavelength respectively, from these figures it is clear that (1,2) increase with increasing wavelength (400-700)nm with increasing in Te concentration and increasing time annealing for (1) but in (2) increasing reach to (400-900)nm wavelength, that is similar behavior of the previous experiments[21,22].
GeSeTe0.03
7000 6000 5000 4000
E
GeSeTe0.01
6000 5000 4000
20Sec 30Sec
GeSe
40Sec
500
600
700 w ave
800
900
1000
500
600
700 w ave
800
900
1000
400
500
600
700 wave
800
900
1000
Fig.(7)
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2E+16 20Sec
E2
E2
E2
30Sec 40Sec
30Sec 40Sec
30Sec 40Sec
500
600
700 w ave
800
900
1000
500
600
700 wave
800
900
1000
500
600
700 w ave
800
900
1000
Fig.(8)
6. Conclusions
In studying the optical properties of GeSe4, GeSe4 Te0.01 and GeSe4 Te0.03 thin films. This part includes the results of transmission and absorption measurements and their relation to wavelength and from these measurements it can be calculated many optical constants, like absorption coefficient, refractive index, extinction coefficient, dielectric constant.
References:
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