LIGHT TRAPPING IN THIN SILICON SOLAR CELLS

James G. Mutitu* , Shouyuan Shi , Suman Addya , Allen Barnett and Dennis W. Prather Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716-3130 *Corresponding author: mutitu@ eecis.udel.edu
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ABSTRACT In this paper we present the design, optimization and characterization of a light trapping architecture that is applied to a thin, 50 micron, silicon solar cell structure. We combine a number of novel photonic engineering device concepts to realize the structure, including a single period hybrid dielectric-metallic back surface reflector and a host of diffraction gratings. We present a novel deep ultraviolet lithography process used in the realization of these gratings and a simulated analysis of their light trapping performance in the solar cell structure. INTRODUCTION

This graph depicts the maximum absorption of the 50 micron structure with only a single pass of light through the structure; a single path length. We can observe that the only light we really need to trap is between 800 1100 nm. To this end, we design a back reflector with a single period, similar to the one we presented in [9], that is optimized for this bandwidth. As shown in Fig. 1(b), the addition of an aluminum layer increases the reflectance of single period DBR significantly. This hybrid dielectricmetallic back reflector is effective at reflecting almost all the light in the desired bandwidth.
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In an effort to increase the efficiency of thin solar cell devices, the optics community has stepped forward with a host of novel light trapping ideas and processes. Many of these ideas have been leveraged from the study of such miniature devices as waveguides, LEDs and lasers. In these studies, a number of new technologies have emerged; the most notable being the incorporation of photonic crystals [1 - 4], plasmonic structures [5, 6] and anti-reflective nano structures [7, 8]. In our own investigations, we have recently developed the idea of a simplified dielectric back reflector. One that utilizes a single period distributed Bragg reflector stack, which when combined with a metal and phase matching layer, produces a high performance reflector [9]. In addition, we have developed a new deep ultraviolet (DUV) lithography process that utilizes a commonplace off the shelf i-line (365 nm) photoresist, SU-8, for the production of sub-micron diffraction gratings. We apply all these technologies, together with a well developed set of design and optimization tools, to achieve high light trapping efficiency in a 50 micron crystalline silicon (c-Si) solar cell. In practice, the handling of thin silicon substrates is quite challenging; the propensity for breakage is very high and hence, a new set of rules have to be defined in order to work with such samples. To this end, we have developed an elaborate set of procedures that we use in order to apply the light trapping structures to the thin wafers. RESULTS The first figure, Fig.1 (a), shows the absorption characteristics of a 50 micron c-Si structure that experiences no front surface or back surface reflection.

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(b) Figure 1. (a) Absorption characteristics of a single pass of light through a 50 micron silicon structure with no front surface reflection or back surface reflector, (b) reflectance characteristics of the specially designed single period hybrid dielectricmetallic back surface reflector, compared to an all dielectric single period reflector with no aluminum layer.

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To further trap the light in the region of interest, we introduce nano structured diffraction gratings, as shown in Fig. 2 (a). This structure also includes a double layer antireflection coating (ARC). The gratings, in conjunction with the back reflector, further increase the path length of light within the active solar cell region. Figure 2(b), shows the absorption characteristics of the solar cell of Fig. 2 (a), compared to the performance of a structure with no light trapping.

AR Coating SU 8 application

DUV Mask Develop Photoresist

1. Deposition of AR coating by PECVD

2. Spin application of SU 8 photoresist PECVD

3. DUV exposure of photoresist

4. Photoresist development

Metal Evaporation DRIE

5. DRIE process for etching gratings

6. DBR deposition by PECVD

7. E-Beam evaporation of back surface metallic layer

Materials
SiO2 Si3N4
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Figure 3. Fabrication process for enhanced solar cell structure

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Si3N4 SiO2 c-Si Al

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The fabrication steps are illustrated in Fig. 3. First, the AR coating is deposited by plasma enhanced chemical vapor deposition (PECVD). Then the SU-8 photoresist is spun on and then using DUV exposure the photoresist is patterned and developed. Then a deep reactive ion etch (DRIE) process is used for etching the grating structures. The DBR is deposited by PECVD and finally the back surface metallic layer is evaporated using E-Beam evaporation. As shown in Fig. 4 (a), we are able to achieve regular binary gratings using the DUV lithography process; and with a lithography method that involves the pre exposure bake time, and exposure dose, we can achieve asymmetric wavy gratings. We employ these two types of gratings to different c-Si structures and characterize the light trapping performance.

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(b) Figure 2. (a) Schematic showing the solar cell structure, and the diffraction gratings, (b) absorption characteristics of the structure in (a), as compared to a structure with no light trapping enhancements, a structure with an AR coating only and also a structure with an AR coating and a back reflector. (a)

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We also present a deep ultra violet (DUV) lithography process that is used to realize the diffraction gratings.

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[6] K. R. Catchpole and A. Polman, "Plasmonic solar cells," Optics Express, vol. 16, 2008, pp. 21793-21800. [7] J. Zhu, Z. Yu, G. F. Burkhart, C. Hsu, S. T. Connor, Y. Xu, Q. Wang, M. McGehee, S. Fan and Y. Cui, "Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays," Nano Letters, vol. 9, 2009, pp. 279282. [8] J. Zhu, C. Hsu, Z. Yu, S. Fan and Y. Cui, "Nanodome solar cells with efficient light management and selfcleaning," Nano Letters, vol. 10, 2010, pp. 1979-1984. [9] J. G. Mutitu, S. Shi, A. Barnett and D. W. Prather, Hybrid Dielectric-Metallic Back Reflector for Amorphous Silicon Solar Cells, Combined Special Issue "Solar Cells" - IJMS and Energies, 2010, pp.1914-1933. (invited paper)

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(b) Figure 4. (a) Scanning electron microscope image of a regular binary diffraction grating, the grating period is 856 nm and the fill factor is 0.5, (b) SEM image of a novel wavy grating, that is realized using a process involving the pre exposure bake time and exposure dose. CONCLUSION In this paper we show that the combination of a single period hybrid dielectric metallic back reflector and submicron diffraction gratings, are effective in trapping light in thin, 50 micron silicon solar cells. We also show a custom DUV lithography process that is utilized to achieve regular binary and exotic wavy gratings, all of which are used for light trapping. REFERENCES [1] J. G. Mutitu, S. Shi, C. Chen, A. Barnett, C. Honsberg and D. W. Prather, "Light trapping designs for thin silicon solar cells based on photonic crystal and metallic diffractive grating structures" , 34th IEEE PVSC, 2009, pp. 579 - 583. [2] J. G. Mutitu, S. Shi, A. Barnett and D. W. Prather, "Light Trapping Enhancement in Thin Silicon Solar Cells Using Photonic Crystals, 35th IEEE PVSC, 2010, pp. 2208 -2212. [3] J. G. Mutitu, S. Shi, A. Barnett and D. W. Prather, "Angular Selective Light Filter Based on Photonic Crystals for Photovoltaic Applications," Photonics Journal, IEEE, 2(3), 2010, pp. 490-499. [4] L. Zeng, Y. Yi, C. Hong, B. A. Alamariu, J. Liu, X. Duan and L. C. Kimerling, "New solar cells with novel light trapping via textured photonic crystal back reflector," in 2005 MRS Fall Meeting, 2005, pp. 251-256. [5] V. E. Ferry, M. A. Verschuuren, H. B. T. Li, E. Verhagen, R. J. Walters, R. E. I. Schropp, H. A. Atwater and A. Polman, "Light trapping in ultrathin plasmonic solar cells," Optics Express, vol. 18, 2010, pp. A237-A245.

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