AOP605 Complementary Enhancement Mode Field Effect Transistor

General Description
The AOP605/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AOP605 and AOP605L are electrically identical. -RoHS Compliant -AOP605L is Halogen Free

Features
n-channel p-channel VDS (V) = 30V -30V ID = 7.5A (VGS = 10V) -6.6A (VGS = -10V) RDS(ON) < 28m
(VGS = 10V)

< 35m (VGS = -10V)

< 43m (VGS = 4.5V) < 58m (VGS = -4.5V)

Top View

PDIP8 Bottom View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2

D2

D1

G1 S2 S1

PDIP-8 n-channel Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Max n-channel Symbol Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics: n-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics: p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25C TA=70C ID IDM PD TJ, TSTG VGS 20 7.5 6 30 2.5 1.6 -55 to 150 p-channel

Max p-channel -30 20 -6.6 -5.3 -30 2.5 1.6 -55 to 150

Units V V A

W C

Symbol t 10s Steady-State Steady-State RJA RJL Symbol t 10s Steady-State Steady-State RJA RJL

Typ 40 67 33 Typ 38 66 30

Max 50 80 40 Max 50 80 40

Units C/W C/W C/W Units C/W C/W C/W

Alpha & Omega Semiconductor, Ltd.

AOP605

n-channel MOSFET Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=7.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6.0A Forward Transconductance Body Diode Forward Voltage VDS=5V, ID=7.5A IS=1A, VGS=0V 12 TJ=125C 33 16 0.76 1 4 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 102 77 1.2 13.84 VGS=4.5V, VDS=15V, ID=7.5A 6.74 1.82 3.2 4.6 VGS=10V, VDS=15V, RL=2.0, RGEN=6 IF=7.5A, dI/dt=100A/s IF=7.5A, dI/dt=100A/s 4.1 20.6 5.2 16.5 7.8 20 2 16.6 8.1 820 43 1 30 22.6 28 1.8 Min 30 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

Maximum Body-DiodeContinuous Current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance. Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery time Body Diode Reverse Recovery charge

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 4 : Jan 2009

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha Omega Semiconductor, Ltd.

AOP605

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

30 10V 25 20 ID (A) 6V 5V 4.5V

20 16 12 VDS=5V

4V ID(A)

15 3.5V 10

8 125C 4 25C 0

5 0 0 1 2

VGS=3V

0.5

1.5

2.5

3.5

4.5

VDS (Volts) Fig 1: On-Region Characteristics

VGS (Volts) Figure 2: Transfer Characteristics

60 50 RDS(ON) (m ) 40 30 20 10 0 5 10 15 20 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V Normalized On-Resistance

1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 50 100 150 200 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=7.5A VGS=10V

VGS=10V

70 60 RDS(ON) (m ) 50 40 30 25C 20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C ID=7.5A IS Amps

1.0E+01 1.0E+00 1.0E-01 125C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body diode characteristics 25C

Alpha Omega Semiconductor, Ltd.

AOP605

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge characteristics VDS=15V ID=7.5A Capacitance (pF) 1000 900 800 700 600 500 400 300 200 100 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Crss Coss Ciss f=1MHz VGS=0V

100 RDS(ON) limited

TJ(Max)=150C TA=25C 1ms 10ms 0.1s 100s 10s Power W

40 TJ(Max)=150C TA=25C 30

10 ID (Amps)

20

1s 10s DC

10

0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100

0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 1

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD Ton Single Pulse

T 100 1000

0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha Omega Semiconductor, Ltd.

AOP605

Gate Charge Test Circuit & W aveform

Vgs Qg 10V
VDC

+
VDC

DUT Vgs Ig

+ Vds -

Qgs

Qgd

Charge

R e s is tiv e S w itch in g T e s t C irc u it & W a v e fo rm s

RL Vds Vds

Vgs Rg

DUT

+
VDC

90% V dd 10% Vgs

t d(o n) t on tr t d(off) t off tf

V gs

D iode R ecovery T e st C ircuit & W ave form s

V ds + DUT V gs
t rr

Q rr = -

Idt

Vds Isd V gs Ig

Isd

IF

dI/d t I RM V dd

+
VD C

V dd V ds

Alpha Omega Semiconductor, Ltd.

AOP605

p-channel MOSFET Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-6.6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-6.6A IS=-1A,VGS=0V TJ=125C -1.2 30 28 37 44 13 -0.76 -1 -4.2 920 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 190 122 3.6 18.5 VGS=-10V, VDS=-15V, ID=-6.6A 9.6 2.7 4.5 7.7 VGS=-10V, VDS=-15V, RL=2.3, RGEN=3 IF=-6.6A, dI/dt=100A/s 5.7 20.2 9.5 20 8.8 24 4.4 22.2 11.6 1100 35 45 58 -2 Min -30 -1 -5 100 -2.4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-6.6A, dI/dt=100A/s

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any a given application depends on the user's specific board design. The current rating based on the 10s thermal resistance given application depends on the user's specific board design. The current rating isis based on the tt rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 4 : Jan 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha Omega Semiconductor, Ltd.

AOP605

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

30 -10V 25 20 -ID (A) 15 10 5 VGS=-3V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 60 55 50 45 RDS(ON) (m ) 40 35 30 25 20 15 10 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 65 60 55 RDS(ON) (m ) -IS (A) 50 45 40 35 30 25 20 3 6 7 8 9 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4 5 10 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C 1.0E-01 125C 1.0E-02 1.0E-03 1.0E-04 25C 1.0E-05 ID=-6.6A 0.80 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-10V Normalized On-Resistance VGS=-4.5V 1.40 1.60 ID=-6.6A VGS=-10V VGS=-4.5V 1.20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -3.5V -4.5V -6V -5V 25 20 -ID(A) 15 10 5 125C 25C 30 VDS=-5V

-4V

1.00

1.0E+01 1.0E+00

Alpha Omega Semiconductor, Ltd.

AOP605

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

10 VDS=-15V ID=-6.6A Capacitance (pF) 1500 1250 Ciss 1000 750 500 Coss 250 0 0 4 8 12 16 20 0 5 10 15 20 25 30 -Qg (nC) Figure 7: Gate-Charge Characteristics -VDS (Volts) Figure 8: Capacitance Characteristics Crss

8 -VGS (Volts)

100.0 TJ(Max)=150C, TA=25C RDS(ON) limited 0.1s 10s 100s 1ms 10ms 1.0 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC

40 TJ(Max)=150C TA=25C 30 Power (W)

-ID (Amps)

10.0

20

10

0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance T

Alpha Omega Semiconductor, Ltd.

AOP605

Gate Charge Test Circuit & Waveform

Vgs Qg -10V
VDC

VDC

DUT Vgs Ig

R e sistive S w itch in g T e st C ircuit & W a ve fo rm s

RL V ds V gs V gs Rg DUT
V DC

V gs V ds

D io d e R e c o v e ry T e s t C irc u it & W a v e fo rm s
Vds + DUT V gs
t rr

V ds -

Is d V gs

+
VD C

Ig

Alpha Omega Semiconductor, Ltd.

+
Charge
t on td(on ) tr t d(o ff) t o ff tf

Vds

Qgs

Qgd

V dd

90%

10%

Q rr = -

Id t

-Is d Vdd -V d s

-I F

d I/d t -I R M Vdd