1. The description of the electron as a tiny particle possessing a denite charge and mass is referred to as the model.

(a) Classical (b) Chemical (c) Electrical (d) mechanical 2. A charge is placed in non uniform potential given by V = A sin x; then the electric eld intensity is (a) A tan x (b) A cos x (c) A sin x (d) -A cos x 3. The direction of force on an electron in the electric eld E is (a) perpendicular to E (b) arbitrary angle with E (c) in the direction of E (d) opposite to the E 4. If we coat CRO screen with Zinc orthoscillicate, we get one of the following color (a) Green (b) Black (c) Blue (d) White 5. The Oscilloscope which is used to examine very fast signals is (a) dual trace (b) dual beam (c) storage (d) sampling 6. If an electron falls through a potential dierence of 1 volt,then its nal velocity becomes (a) 393 Km/sec (b) 493 Km/sec (c) 593 Km/sec (d) 693 Km/sec 7. circuit cuts o the electron beam during retrace period in CRO. (a) blanking circuit (b) vertical amplier (c) delay line (d) horizontal amplier 8. A point source of electrons is situated in mutually perpendicular uniform magnetic and electric elds. The magnetic ux density is 0.01 b/m2 and electrical eld strength is 104 v/m. Determine the minimum distance from the same at which an electron with zero velocity will again have zero velocity (a) 3.6 cm (b) 0.36 cm (c) 36 cm (d) 3 cm 9. For the following Lissajous gure 9 calculate signal frequency, if ac signal frequency is 60 Hz.

Figure 9 (a) 10 Hz (b) 720 Hz (c) 50 Hz (d) 360 Hz 10. The energy in synchrotron is increased upto (a) 70 Bev (b) 10 Bev (c) 1 Bev. (d) 2 Bev 11. The ideal value of resistance of the PN junction diode in reverse bias is (a) 500 (b) zero ohm (c) 100 (d) innite 12. Einsteins relationship states that (a) DP /p = Dn /n = KT /q (b) n /Dn = VT (c) DP n = Dn p = 1/VT (d) DP /p = Dn /n = 1/VT 13. The electron concentration in a semiconductor is shown in gure 13. Determine the potential between points x = (0) 0and x = w given nn = 103 . 0

Figure 13 (a) 160 mV (b) 175 mV (c) - 173 mV. (d) -170 mV 14. For what voltage will the reverse current in a PN junction silicon diode reach 95 percent of its saturation value at room temperature (a) -1.5 m V (b) 150 m V (c) -150 m V (d) 1.5 m V 15. The number of holes in valance band P = (a) NV e(EF +EV ) /KT (b) NV e(EV EF ) KT (c) NV e(EF EV ) /KT (d) NV e(EF EV )/KT 16. A semiconductor material is doped with 1015 donor type atoms per cm3 . The intrinsic charge carrier concentration in the semiconductor is 1010 per cm3 . The approximate number of holes in the doped semiconductor under equilibrium condition is (a) 1015 (b) 0 (c) 105 (d) 1010 17. In a semiconductor diode, the barrier potential oers opposition to only (a) holes in the p region (b) minority carriers in both regions (c) free electrons in the N region (d) majority carriers in both regions 18. The following diode is used as voltage regulator. (a) Varicap (b) Photo (c) Tunnel (d) Zener 19. Which of the following Diode has -ve resistance region in its V-I characteristics (a) LED (b) Zener diode (c) Varactor diode (d) Tunnel diode 20. The function of the photo diode is to convert (a) electrical signal into light signal (b) Light signal into mechanical signal (c) mechanical signal into light signal (d) light signal into electrical signal