Sie sind auf Seite 1von 9

PD - 95021

IRF7205PbF
Adavanced Process Technology l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description
l

HEXFET Power MOSFET


S
1 2 3 4 8 7

A D D D D

S
S G

VDSS = -30V RDS(on) = 0.070 ID = -4.6A

6 5

Top View

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

SO-8

Absolute Maximum Ratings


Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TC = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range

Max.
-4.6 -3.7 -15 2.5 0.020 20 -3.0 -55 to + 150

Units
A W W/C V V/nS C

Thermal Resistance Ratings


RJA Maximum Junction-to-Ambient

Parameter

Min.

Typ.

Max.
50

Units
C/W 2/18/04

IRF7205PbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance

RDS(ON) V GS(th) g fs IDSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss

Min. -30 -1.0

Typ. Max. Units Conditions V VGS = 0V, ID = -250A -0.024 V/C Reference to 25C, ID = -1mA 0.070 VGS = -10V, I D = -4.6A 0.130 VGS = -4.5V, ID = -2.0A -3.0 V VDS = VGS, I D = -250A 6.6 S VDS = -15V, ID = -4.6A -1.0 VDS = -24V, VGS = 0V A -5.0 VDS = -15V, VGS = 0V, TJ = 70 C -100 VGS = -20V nA 100 VGS = 20V 27 40 ID = -4.6A 5.2 nC VDS = -15V 7.5 VGS = -10V 14 30 VDD = -15V 21 60 ID = -1.0A ns 97 150 RG = 6.0 71 100 RD = 10 2.5 4.0 870 720 220 nH pF
D

Between lead,6mm(0.25in.) from package and center of die contact VGS = 0V VDS = -10V = 1.0MHz

G S

Source-Drain Ratings and Characteristics


IS
I SM

V SD t rr Q rr ton

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Min. Typ. Max. Units

Conditions D MOSFET symbol -2.5 showing the A G integral reverse -15 p-n junction diode. S -1.2 V TJ = 25C, IS = -1.25A, VGS = 0V 70 100 ns TJ = 25C, IF = -4.6A 100 180 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by


max. junction temperature.

Pulse width 300s; duty cycle 2%.

ISD -4.6A, di/dt 90A/s, VDD V(BR)DSS,


TJ 150C

Surface mounted on FR-4 board, t 10sec.

IRF7205PbF

IRF7205PbF

C,

12

IRF7205PbF
V DS V GS RG -10V
Pulse Width 1 s Duty Factor 0.1 %

RD

D.U.T.
+

V DD

Fig 10a. Switching Time Test Circuit


td(on) tr t d(off) tf

VGS 10%

90% VDS

Fig 10b. Switching Time Waveforms

100

Thermal Response (Z thJA )

D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100

10

0.1 0.0001

0.001

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7205PbF
Current Regulator Same Type as D.U.T.

QG

50K 12V .2F .3F

-10V
QGS VG QGD
VGS

D.U.T.

+VDS

-3mA

Charge

IG

ID

Current Sampling Resistors

Fig 12a. Basic Gate Charge Waveform

Fig 12b. Gate Charge Test Circuit

IRF7205PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

RG VGS dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

+ V DD

Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive P.W. Period D=

P.W. Period

[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

[VDD]

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

[ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS

IRF7205PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00

A1 .0040

6 E

5 H 0.25 [.010] A

c D E e e1 H

.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8

1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8

6X

K L y

e1

K x 45 C 0.10 [.004] y 8X c

8X b 0.25 [.010]

A1 C A B

8X L 7

NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 6.46 [.255]

FOOT PRINT 8X 0.72 [.028]

8X 1.78 [.070]

SO-8 Part Marking Information (Lead-Free)


EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER

INT ERNAT IONAL RECT IFIER LOGO

XXXX F 7101

IRF7205PbF

SO-8 Tape and Reel


Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1

12.3 ( .484 ) 11.7 ( .461 )

8.1 ( .318 ) 7.9 ( .312 )

FEED DIRECTION

NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00 (12.992) MAX.

14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/04

Das könnte Ihnen auch gefallen