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IRF7205PbF
Adavanced Process Technology l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description
l
A D D D D
S
S G
6 5
Top View
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
SO-8
Max.
-4.6 -3.7 -15 2.5 0.020 20 -3.0 -55 to + 150
Units
A W W/C V V/nS C
Parameter
Min.
Typ.
Max.
50
Units
C/W 2/18/04
IRF7205PbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) V GS(th) g fs IDSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Typ. Max. Units Conditions V VGS = 0V, ID = -250A -0.024 V/C Reference to 25C, ID = -1mA 0.070 VGS = -10V, I D = -4.6A 0.130 VGS = -4.5V, ID = -2.0A -3.0 V VDS = VGS, I D = -250A 6.6 S VDS = -15V, ID = -4.6A -1.0 VDS = -24V, VGS = 0V A -5.0 VDS = -15V, VGS = 0V, TJ = 70 C -100 VGS = -20V nA 100 VGS = 20V 27 40 ID = -4.6A 5.2 nC VDS = -15V 7.5 VGS = -10V 14 30 VDD = -15V 21 60 ID = -1.0A ns 97 150 RG = 6.0 71 100 RD = 10 2.5 4.0 870 720 220 nH pF
D
Between lead,6mm(0.25in.) from package and center of die contact VGS = 0V VDS = -10V = 1.0MHz
G S
V SD t rr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Conditions D MOSFET symbol -2.5 showing the A G integral reverse -15 p-n junction diode. S -1.2 V TJ = 25C, IS = -1.25A, VGS = 0V 70 100 ns TJ = 25C, IF = -4.6A 100 180 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
IRF7205PbF
IRF7205PbF
C,
12
IRF7205PbF
V DS V GS RG -10V
Pulse Width 1 s Duty Factor 0.1 %
RD
D.U.T.
+
V DD
VGS 10%
90% VDS
100
D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100
10
0.1 0.0001
0.001
IRF7205PbF
Current Regulator Same Type as D.U.T.
QG
-10V
QGS VG QGD
VGS
D.U.T.
+VDS
-3mA
Charge
IG
ID
IRF7205PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer
RG VGS dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ V DD
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS
IRF7205PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
5 H 0.25 [.010] A
c D E e e1 H
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
K L y
e1
K x 45 C 0.10 [.004] y 8X c
8X b 0.25 [.010]
A1 C A B
8X L 7
NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 6.46 [.255]
8X 1.78 [.070]
XXXX F 7101
IRF7205PbF
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/04