Beruflich Dokumente
Kultur Dokumente
Kihwan Choi
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Contents
Introduction Flash memory 101 Basic operations Current issues & approach In the near future
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PMP
2010
Serve r
2007
2006
~1999
2002
PC Oriented
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Major players
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Charge storage
G S n p B
F/G
D n
S n p B
D n
Flash cell
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MOSFET
ELECTRONICS
MOS Transistor
Vg(Vg>Vth1)
ON
No. of cells
Read Vs(0V) Program Erase Vg(Vg<Vth2) ON OFF Vs(0V) Vth1 Vd(>0V) Ids1(>0)
OFF
Vth [V]
Vth2 Vd(>0V) Ids2(=0)
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B/L Metal
Dielectric : ONO C/G(W/L) F/G(F-Poly)
Source Drain
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NOR
B 0 1 0 1 C 1 0 0 0
Truth table
0 0 1 1
A C C B
Logic gate
B
circuit
B C A
A B C A B
Flash
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Vcg = 18 V
Vcg = 0V
0V
e e e e
0V
float
e e e e
float
Coupling ratio
Vfg = Vcg cg
CONO CS
Source
C/G F/G CB
cg =
CD
CONO (CD+CS+CB+CONO)
Drain
cg : Coupling Ratio
(From Q=CV and Charge Conservation Law)
For fast programming, high Vfg is required, i.e. either high Vcg or large cg
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SSL WL
ONO
PP-Well
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page
: program unit
block
: erase unit
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WL Decoder & Driver Memory Array Memory Array Memory Array Memory Array
Page Driver & Buffer (2KB~4KB) Peripheral & Charge Pump Data I/O Pad Samsung 63nm 8Gb MLC NAND
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A12~A30
Cell Array
A0~A11
Command
Command Register
VCC VSS
CE RE WE
Global Buffers
Output Driver
I/O 0
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Basic operations
NAND Flash
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Read operation
Bias condition
- selected WL : Target voltage (Vtarget) - unselected WLs : high enough to conduct all cells in a string
1V SSL Unselected WLs Selected WL Vread Vread Vread Vtarget Vread P1 Unselected WLs Vread Vread Vread Vread GSL Vread 0V
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Vtarget
Vread
P2 Vth
Sensing margin
The ratio of On cell & Off cell current
0V
Precharge
Sensing
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Read disturbance
Increasing Vread soft program occurs in the unselected cell of selected string
Vread Vread Vread Vtarget Vread on 0V Vread Vread Vread Vread Vread
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# of cell
Vread
Vth
Program operation
Bias condition
- selected WL : Program voltage (Vpgm) - unselected WLs : Pass voltage (Vpass)
Vcc 0V Vcc
Vcc Vpass Vpass Vpgm Vpass on off 0V Vpass Vpass Vpass Vpass Vth # of cell
Unselected WLs
GSL
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GND
ELECTRONICS
Program inhibition
Should not be programmed (= program inhibited)
Vcc 0V Vcc Vcc
Self boosting
0V Vpgm
OFF
Vcc-Vth+ GND
Vcc
Vpass
Vpgm
OFF
GND
For inhibition only, the higher Vpass, the better Vpgm disturbance But, higher Vpass causes more Vpass disturbance
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Self boosting
Inhibit BL : Vcc SSL WL31 WL30 WL29 WL28 Vcc 10V 10V 20V 10V Vpass WL1 WL0 GSL 10V 10V 0V Program channel Inhibit channel is boosted !!! Vpgm
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Vpass window
Optimal Vpass region considering both Vpgm and Vpass disturbances at the same time
Program cell 0V Inhibit cell VCC
Vchannel = 0V
Vchannel = 8~9V
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Erase operation
Bias condition
- all WLs in the selected Block : 0V - GSL/SSL : Floating - Bulk : Vera
Floating GND GND GND GND on 0V GND GND GND GND Floating off Vth # of cell
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Erase disturbance
Self boosting can be used
Old Method
B/L (20V) SSLn(20V) Select Block WL0(0V) WL7(0V) GSLn(20V) CSL(20V) GSLn-1(20V) Unselect Block WL7(20V) WL0(20V) SSLn-1(20V) Cell Array Substrate 0V 20V Unselect Block Select Block SSLn(Floating) WL0(0V) WL7(0V) GSLn(Floating) CSL(20V) GSLn-1(Floating) WL7(Floating) WL0(Floating) SSLn-1(Floating) Cell Array Substrate 0V 20V
New Method
B/L (20V)
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SLC
E 4 Level Cell
( NAND Flash)
Vread
MLC
P1
P2
P3
8 Level Cell
3bit
E 0V
P1 P2 P3 P4 P5 P6 P7 Vth
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No. of Loop
Vpgm_start
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Cost
Chip size Bit density etc
Performance
Program time Read time etc
Reliability
Data retention Program/Read cycle etc
All these are strongly dependent on each other and may become worse as cell size shrinks down
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F-poly coupling
Program disturbance Read disturbance
Endurance
Ideal
0V Vth
Verify level
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Neighborhood interference
F-poly coupling noise
- Cell Vth can be raised as neighboring cells are programmed
2 3 4
C-poly
ONO
C-poly
ONO
1
Victim
P-well
BL(1) BL(2) WL(i+1) WL(i) 4 2 3 1 BL(3) 4
2 3 4
Aggressor
Vth 2
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WL Initial
BL Diag.
Final
WL1 WL2 WL3
Diag. WL Diag.
BL
BL
Diag.
WL
Diag.
Cell State
# of cells
BL1
BL2
BL3
P1
P2
P3
Vth
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Shadow sequence
WL3
Convential sequence
WL3
WL2
WL1
11
ELECTRONICS
WL3
4 5 2 3
5-1 7-1
WL1
1
P1
P2
P3 cell Vth
Fine program
Fine program
P1
P2
P3 cell Vth
SBL(Shielded-bit line)
BLe BLo
ABL(All-bit line)
BL1 BL2
64 cells (one string) One block
PB
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3D Flash memory
Bit-Cost Scalable(BiCS) technology
2007 IEDM, Toshiba
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3D Flash memory
TCAT(Terabit Cell Array Transistor) technology
2009 VLSI, Samsung
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What is CTF ?
CTF (Charge Trap Flash)
- SONOS type Flash - electron is trapped in nitride trap layer
SONOS
Si (S) Oxide (O) Nitride (N) Oxide (O) n+ n+
Floating Gate
Si ON O
n+
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No neighborhood coupling
All stored charge is lost Thicker tunnel oxide Device Scaling is difficult
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Only part of the charge is lost Thinner tunnel oxide Device Scaling is easy
ELECTRONICS
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