PD - 95960

IRF9321PbF
HEXFET Power MOSFET

VDS RDS(on) max

(@VGS = -10V)

-30 7.2 11.2 34 -15

V m m nC A
6 6 6 *         ' ' ' '

RDS(on) max
(@VGS = -4.5V)

Qg (typical) ID
(@TA = 25C)

SO-8

Applications

Charge and Discharge Switch for Notebook PC Battery Application

Features and Benefits
Features Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits results in Multi-Vendor Compatibility Environmentally Friendlier

Orderable part number IRF9321PbF IRF9321TRPbF

Package Type SO8 SO8

Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000

Note

Absolute Maximum Ratings

Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current

Max.
-30 20 -15 -12 -120 2.5 1.6 0.02 -55 to + 150

Units
V

f Power Dissipation f
Power Dissipation

W W/C C

Linear Derating Factor Operating Junction and Storage Temperature Range

Notes through are on page 2

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1
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IRF9321PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge

Min.
-30 -1.3 30

Typ.
0.021 5.9 9.3 -1.8 -5.9 34 65 10 16 18 21 79 185 145 2590 590 360

Max.
7.2 11.2 -2.4 -1.0 -150 -100 100 98 Typ.

Units
V V/C m V mV/C A nA S nC nC ns

Conditions
VGS = 0V, ID = -250A Reference to 25C, ID = -1mA VGS = -10V, ID = -15A VGS = -4.5V, ID = -12A VDS = VGS, ID = -50A VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VDS = -10V, ID = -12A VDS = -15V, VGS = -4.5V, ID = - 12A VGS = -10V VDS = -15V ID = -12A VDD = -30V, VGS = -4.5V ID = -1.0A RG = 6.8 See Figs. 19a & 19b VGS = 0V

e e

h Total Gate Charge h

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance

h Gate-to-Drain Charge h Gate Resistance h

Gate-to-Source Charge

Output Capacitance Reverse Transfer Capacitance Parameter

pF

VDS = -25V = 1.0MHz Max. 310 -12 Units mJ A

Avalanche Characteristics
EAS IAR Single Pulse Avalanche Energy Avalanche Current

Diode Characteristics
Parameter
IS ISM VSD trr Qrr

d
Min.

Typ.
38 24

Max.
-2.5

Units
A

Conditions
MOSFET symbol showing the integral reverse p-n junction diode.
G S D

Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

-120 -1.2 57 36 Typ. V ns nC

TJ = 25C, IS = -2.5A, VGS = 0V di/dt = 100/s Max. 20 50

TJ = 25C, IF = -2.5A, VDD = -24V

Thermal Resistance
Parameter
RJL RJA Junction-to-Drain Lead Junction-to-Ambient

Units
C/W

Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 4.3mH, RG = 25, IAS = -12A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ of approximately 90C. For DESIGN AID ONLY, not subject to production testing.

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IRF9321PbF
1000
TOP VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V

1000
TOP VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V

-ID, Drain-to-Source Current (A)

100

10

BOTTOM

-ID, Drain-to-Source Current (A)

100
BOTTOM

10

1 -2.5V

-2.5V 1 60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100

0.1

60s PULSE WIDTH

Tj = 25C 0.01 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V)

-V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000
RDS(on) , Drain-to-Source On Resistance (Normalized)

Fig 2. Typical Output Characteristics

1.6 ID = -15A 1.4 VGS = -10V

-I D, Drain-to-Source Current (A)

100

1.2

10 TJ = 150C 1 VDS = -10V 60s PULSE WIDTH 1 2 3 4 5 T J = 25C

1.0

0.8

0.1

0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)

-V GS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd

Fig 4. Normalized On-Resistance vs. Temperature

14.0 ID= -12A
-V GS, Gate-to-Source Voltage (V)

12.0 10.0 8.0 6.0 4.0 2.0 0.0

C, Capacitance (pF)

VDS= -24V VDS= -15V

10000 Ciss Coss 1000 Crss

VDS= -6.0V

100 1 10 -VDS, Drain-to-Source Voltage (V) 100

25

50

75

100

QG, Total Gate Charge (nC)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

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IRF9321PbF
1000

1000

-I D, Drain-to-Source Current (A)

-I SD, Reverse Drain Current (A)

OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 1msec

100

100 T J = 150C

10 DC 1 T A = 25C 0.1 Tj = 150C Single Pulse 0.01 0.1

10msec

10

T J = 25C

VGS = 0V 1.0 0.3 0.5 0.7 0.9 1.1 1.3 -V SD, Source-to-Drain Voltage (V)

10

100

-VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

15
-V GS(th), Gate threshold Voltage (V)

Fig 8. Maximum Safe Operating Area

2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 ID = -50A

-I D, Drain Current (A)

10

0 25 50 75 100 125 150 T A , Ambient Temperature (C)

-75 -50 -25

25

50

75 100 125 150

T J , Temperature ( C )

Fig 9. Maximum Drain Current vs. Ambient Temperature

100
Thermal Response ( Z thJA ) C/W

Fig 10. Threshold Voltage vs. Temperature

D = 0.50 10 0.20 0.10 0.05 0.02 0.01

0.1

0.01

SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 0.01 0.1 1

Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 10 100 1000

0.001 1E-006

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF9321PbF
18 16 14 12 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 T J = 25C T J = 125C ID = -15A
RDS(on), Drain-to -Source On Resistance ( m)

RDS(on), Drain-to -Source On Resistance (m )

20

60 50 40 Vgs = -4.5V 30 20 10 0 0 20 40 60 80 100 120 -I D, Drain Current (A) Vgs = -10V

Fig 12. On-Resistance vs. Gate Voltage

1400
EAS , Single Pulse Avalanche Energy (mJ)

-V GS, Gate -to -Source Voltage (V)

Fig 13. Typical On-Resistance vs. Drain Current

1000

1200 1000 800 600 400 200 0 25 50 75

Single Pulse Power (W)

ID TOP -1.4A -2.2A BOTTOM -12A

800

600

400

200

100

125

150

0 1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

Starting T J , Junction Temperature (C)

Time (sec)

Fig 14. Maximum Avalanche Energy vs. Drain Current

Fig 15. Typical Power vs. Time

D.U.T *

Driver Gate Drive

P.W.

Period

D=

P.W. Period VGS=10V

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

RG
di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test

VDD

VDD

+ -

Re-Applied Voltage

Body Diode

Forward Drop

Inductor Current Inductor Curent

Ripple 5% ISD

Reverse Polarity of D.U.T for P-Channel

* VGS = 5V for Logic Level Devices

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Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET Power MOSFETs

IRF9321PbF
Id Vds Vgs

L
0

DUT
20K 1K
S S

VCC
Vgs(th)

Qgodr

Qgd

Qgs2 Qgs1

Fig 17a. Gate Charge Test Circuit

Fig 17b. Gate Charge Waveform

VDS

I AS

RG
-V GS -20V

D.U.T
IAS

DRIVER
0.01

VDD A

tp

tp V(BR)DSS
15V

Fig 18a. Unclamped Inductive Test Circuit

Fig 18b. Unclamped Inductive Waveforms

VDS VGS RG

RD
td(on) tr t d(off) tf

D.U.T.

VGS 10%

V DD

-VGS
Pulse Width 1 s Duty Factor 0.1 %

90% VDS

Fig 19a. Switching Time Test Circuit

Fig 19b. Switching Time Waveforms

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IRF9321PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)

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9DH 6 6 i p 9 @ r r C F G

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SO-8 Part Marking Information

@Y6HQG@)UCDTDT6IDSA&  HPTA@U 96U@8P9@`XX Q29DTBI6U@TG@69AS@@ QSP9V8UPQUDPI6G `2G6TU9DBDUPAUC@`@6S XX2X@@F 626TT@H7G`TDU@8P9@ GPU8P9@ Q6SUIVH7@S

DIU@SI6UDPI6G S@8UDAD@S GPBP

;;;; )

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRF9321PbF

SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))

TERMINAL NUMBER 1

12.3 ( .484 ) 11.7 ( .461 )

8.1 ( .318 ) 7.9 ( .312 )

FEED DIRECTION

NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00 (12.992) MAX.

14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Qualification Information
Qualification level

Consumer (per JEDEC JESD47F guidelines) SO-8 Yes MSL1 (per JEDEC J-STD-020D)

Moisture Sensitivity Level RoHS Compliant

Qualification standards can be found at International Rectifiers web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/2010

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