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SS8050

SS8050

2W Output Amplifier of Portable Radios in


Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: IC=1.5A
• Collector Power Dissipation: PC=2W (TC=25°C)

1 TO-92
1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor


Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 1.5 A
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted


Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V
BVCEO Collector-Emitter Breakdown Voltage IC=2mA, IB=0 25 V
BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V
ICBO Collector Cut-off Current VCB=35V, IE=0 100 nA
IEBO Emitter Cut-off Current VEB=6V, IC=0 100 nA
hFE1 DC Current Gain VCE=1V, IC=5mA 45 135
hFE2 VCE=1V, IC=100mA 85 160 300
hFE3 VCE=1V, IC=800mA 40 110
VCE (sat) Collector-Emitter Saturation Voltage IC=800mA, IB=80mA 0.28 0.5 V
VBE (sat) Base-Emitter Saturation Voltage IC=800mA, IB=80mA 0.98 1.2 V
VBE (on) Base-Emitter On Voltage VCE=1V, IC=10mA 0.66 1 V
Cob Output Capacitance VCB=10V, IE=0 9.0 pF
f=1MHz
fT Current Gain Bandwidth Product VCE=10V, IC=50mA 100 190 MHz

hFE Classification
Classification B C D
hFE2 85 ~ 160 120 ~ 200 160 ~ 300

©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001


SS8050
Typical Characteristics

0.5 1000

VCE = 1V
IB = 3.0mA
IC[mA], COLLECTOR CURRENT

0.4

hFE, DC CURRENT GAIN


IB = 2.5mA
100
0.3 IB = 2.0mA

IB = 1.5mA
0.2
10
IB = 1.0mA
0.1

IB = 0.5mA

1
0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 1000

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain


VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

10000 100

IC = 10 IB VCE = 1V
IC[mA], COLLECTOR CURRENT

V BE(sat)
1000 10

100 1

V CE(sat)

10 0.1
0.1 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2

IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage


Collector-Emitter Saturation Voltage

1000 1000
CURRENT GAIN BANDWIDTH PRODUCT

IE = 0 VCE = 10V
f = 1MHz
Cob [pF], CAPACITANCE

100 100
fT[MHz],

10 10

1 1
1 10 100 1 10 100 400

VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product

©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001


SS8050
Package Demensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20

0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001


TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FAST® OPTOPLANAR™ STAR*POWER™
Bottomless™ FASTr™ PACMAN™ Stealth™
CoolFET™ FRFET™ POP™ SuperSOT™-3
CROSSVOLT™ GlobalOptoisolator™ Power247™ SuperSOT™-6
DenseTrench™ GTO™ PowerTrench® SuperSOT™-8
DOME™ HiSeC™ QFET™ SyncFET™
EcoSPARK™ ISOPLANAR™ QS™ TruTranslation™
E2CMOS™ LittleFET™ QT Optoelectronics™ TinyLogic™
EnSigna™ MicroFET™ Quiet Series™ UHC™
FACT™ MICROWIRE™ SLIENT SWITCHER® UltraFET®
FACT Quiet Series™ OPTOLOGIC™ SMART START™ VCX™
STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS


Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2001 Fairchild Semiconductor Corporation Rev. H3