SPC6601

N & P Pair Enhancement Mode MOSFET

DESCRIPTION The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter

FEATURES N-Channel 30V/2.8A,RDS(ON)= 68m@VGS=10V 30V/2.3A,RDS(ON)= 78m@VGS=4.5V 30V/1.5A,RDS(ON)= 108m@VGS=2.5V P-Channel -30V/-2.8A,RDS(ON)=105m@VGS=- 10V -30V/-2.5A,RDS(ON)=120m@VGS=-4.5V -30V/-1.5A,RDS(ON)=150m@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP 6P package design

PIN CONFIGURATION( TSOP 6P )

PART MARKING

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SPC6601
N & P Pair Enhancement Mode MOSFET
PIN DESCRIPTION

Pin 1 2 3 4 5 6

Symbol G1 S2 G2 D2 S1 D1

Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1

ORDERING INFORMATION Part Number SPC6601ST6RG Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPC6601ST6RG : Tape Reel ; Pb Free Package TSOP- 6P Part Marking 01YW

ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted) Typical Parameter Drain-Source Voltage Gate Source Voltage Continuous Drain Current(TJ=150) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient T 10sec Steady State TA=25 TA=70 TA=25 TA=70 Symbol N-Channel VDSS VGSS ID IDM IS PD TJ TSTG RJA 30 12 2.8 2.3 10 1.25 P-Channel -30 12 -2.8 -2.1 -8 -1.4 Unit

V V A A A W

1.15 0.75 -55/150 -55/150 50 90 52 90

/W

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SPC6601
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted)

Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current

Symbol

Conditions VGS=0V,ID= 250uA VGS=0V,ID=-250uA VDS=VGS,ID=250uA VDS=VGS,ID=-250uA VDS=0V,VGS=12V VDS=0V,VGS=12V VDS= 24V,VGS=0V VDS=-24V,VGS=0V VDS= 24V,VGS=0V TJ=55 VDS=-24V,VGS=0V TJ=55 VDS 5V,VGS = 10V VDS -5V,VGS =-10V VGS= 10V,ID= 2.8A VGS=-10V,ID=-2.8A VGS= 4.5V,ID= 2.3A VGS=-4.5V,ID=-2.5A VGS= 2.5V,ID= 1.5A VGS=-2.5V,ID=-1.5A VDS=4.5V,ID=2.8A VDS=-10V,ID=-2.8A IS= 1.25A,VGS =0V IS=-1.2A,VGS =0V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch

Min. 30 -30 0.8 -0.4

Typ

Max. Unit

V(BR)DSS VGS(th) IGSS IDSS ID(on)

1.6 -1.0 100 100 1 -1 10 -10 0.048 0.077 0.054 0.092 0.079 0.118 4.6 4 0.8 -0.8 4.2 5.8 0.6 0.8 1.5 1.5 2.5 6 2.5 3.9 20 40 4 15 0.068 0.105 0.078 0.120 0.108 0.150 1.2 -1.2 6

nA uA A

6 -6

Drain-Source On-Resistance RDS(on)

Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge

gfs VSD

S V

Qg Qgs Qgd td(on)

N-Channel VDS=15 ,VGS=4.5V , ID2.0A P-Channel VDS=-15V ,VGS=-4.5V , ID-2.0A N-Channel VDD=15 , RL=10 VGEN=10V , RG=3 P-Channel VDD=-15V , RL=15 VGEN=-10V , RG=3

nC

Turn-On Time tr td(off) Turn-Off Time tf

nS

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SPC6601
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( N-Channel )

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SPC6601
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( N-Channel )

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SPC6601
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( N-Channel )

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SPC6601
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( P-Channel )

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SPC6601
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( P-Channel )

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SPC6601
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( P-Channel )

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SPC6601
N & P Pair Enhancement Mode MOSFET
TSOP- 6P PACKAGE OUTLINE

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N & P Pair Enhancement Mode MOSFET

Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. The SYNC Power logo is a registered trademark of SYNC Power Corporation 2004 SYNC Power Corporation Printed in Taiwan All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 http://www.syncpower.com

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