DMP3098L

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary
V(BR)DSS RDS(on) max 70m@ VGS = -10V -30V ID TA = 25C -3.8A -3.0A

Features and Benefits

Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

120m@ VGS =-4.5V

Description and Applications

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Power management functions Analog Switch Load Switch Boost Switch

Mechanical Data
Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate)

Drain

SOT-23

Gate

S
Source

Top View

Pin Configuration

EQUIVALENT CIRCUIT

Ordering Information (Note 3)

Part Number DMP3098L-7
Notes:

Case SOT23

Packaging 3000/Tape & Reel

1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMB

DMB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September)

Date Code Key Year Code Month Code

2008 V Jan 1 Feb 2

2009 W Mar 3

YM
2010 X Apr 4

2011 Y May 5 Jun 6

2012 Z Jul 7 Aug 8

2013 A Sep 9

2014 B Oct O Nov N

2015 C Dec D

DMP3098L
Document number: DS31447 Rev. 7 - 2

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August 2011
Diodes Incorporated

DMP3098L Maximum Ratings @TA = 25C unless otherwise specified

Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 4) VGS = -10V Steady State TA = 25C TA = 70C Symbol VDSS VGSS ID IDM Value -30 20 -3.8 -2.9 -11 Units V V A A

NEW PRODUCT

Pulsed Drain Current (Note 5)

Thermal Characteristics

@TA = 25C unless otherwise specified Symbol PD RJA TJ, TSTG Value 1.08 115 -55 to +150 Units W C/W C

Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25C (Note 4) Operating and Storage Temperature Range

Electrical Characteristics @TA = 25C unless otherwise specified

Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS (Note 7) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Notes:

Symbol BVDSS

Min -30 -1.0

Typ -1.8 56 98 3.6 336 70 49 4.6

4.0 7.8

Max -800 100 -2.1 70 120 -1.26 1008 210 147 8.0 12.0 10.0 35.2 19.0

Unit V nA nA V m S V pF pF pF

Test Condition VGS = 0V, ID = -250A VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250A VGS = -10V, ID = -3.8A VGS = -4.5V, ID = -3.0A VDS = -5V, ID = -2.7A VGS = 0V, IS = -2.7A

IDSS
IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss RG

VDS = -25V, VGS = 0V, f = 1.0MHz VGS = 0V VDS = 0V, f = 1MHz VDS = -15V, VGS = -4.5V, ID = -3.8A

Qg Qgs Qgd td(on) tr td(off) tf

nC

1.0 2.5 6.0 5.0 17.6 9.5

VDS = -15V, VGS = -10V, ID = -3.8A

ns

VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0

4. Device mounted on FR-4 PCB on 2 oz., 0.5 in.2 copper pads and t 5 sec. 5. Pulse width 10S, Duty Cycle 1%. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing.

DMP3098L
Document number: DS31447 Rev. 7 - 2

2 of 5 www.diodes.com

August 2011
Diodes Incorporated

DMP3098L

20

20
VDS = -5V

16 -ID, DRAIN CURRENT (A)

VGS = -10V

16 -ID, DRAIN CURRENT (A)

T A = 150C TA = 125C TA = 25C TA = -55C

12

NEW PRODUCT

VGS = -4.5V

12

4
VGS = -1.5V VGS = -2.5V VGS = -3.0V

0 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5

0 1 2 3 4 5 -VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics

0.14
TA = 150C

RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE ()

RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE ()

0.12
TA = 125C

0.10 0.08 0.06 0.04 0.02 0

TA = 85C

VGS = -4.5V

T A = 25C

0.1

TA = -55C

VGS = -10V

0.01

8 12 16 -ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage

20

4 6 8 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature

10

1.6

1,000

RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)

1.4

VGS = -10V ID = -5.3A VGS = -4.5V ID = -4.2A

1.2

C, CAPACITANCE (pF)

Ciss

100
Coss Crss

1.0

0.8

0.6 -50

-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature

10 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 30

DMP3098L
Document number: DS31447 Rev. 7 - 2

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Diodes Incorporated

DMP3098L

2.4 -VGS(TH), GATE THRESHOLD VOLTAGE (V)

10

2.0

ID = -250A

-IS, SOURCE CURRENT (A)

8
TA = 25C

NEW PRODUCT

1.6

1.2

-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature

0.8 -50

0 0.4 0.6 0.8 1 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2

100
RDS(on) Limited

ID, DRAIN CURRENT (A)

10

DC PW = 10s PW = 1s PW = 100ms PW = 10ms

0.1
TJ(m ax) = 150C TA = 25C Single Pulse

PW = 1ms PW = 100s PW = 10s

0.01 0.1

1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Safe Operation Area

100

Package Outline Dimensions

A

B C

G H K M

Dim A B C D F G H J K L M

SOT23 Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0

Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8

DMP3098L
Document number: DS31447 Rev. 7 - 2

4 of 5 www.diodes.com

August 2011
Diodes Incorporated

DMP3098L

Suggested Pad Layout

Y Z

NEW PRODUCT

Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35

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DMP3098L
Document number: DS31447 Rev. 7 - 2

5 of 5 www.diodes.com

August 2011
Diodes Incorporated