BYV26A, BYV26B, BYV26C, BYV26D, BYV26E

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Vishay Semiconductors

Ultra-Fast Avalanche Sinterglass Diode

FEATURES
Glass passivated junction Hermetically sealed package Very low switching losses Low reverse current High reverse voltage Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

949539

MECHANICAL DATA
Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg

APPLICATIONS
Switched mode power supplies High-frequency inverter circuits

ORDERING INFORMATION (Example)

DEVICE NAME BYV26E BYV26E ORDERING CODE BYV26E-TR BYV26E-TAP TAPED UNITS 5000 per 10" tape and reel 5000 per ammopack MINIMUM ORDER QUANTITY 25 000 25 000

PARTS TABLE
PART BYV26A BYV26B BYV26C BYV26D BYV26E TYPE DIFFERENTIATION VR = 200 V; IF(AV) = 1 A VR = 400 V; IF(AV) = 1 A VR = 600 V; IF(AV) = 1 A VR = 800 V; IF(AV) = 1 A VR = 1000 V; IF(AV) = 1 A PACKAGE SOD-57 SOD-57 SOD-57 SOD-57 SOD-57

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)

PARAMETER TEST CONDITION PART BYV26A BYV26B Reverse voltage = repetitive peak reverse voltage See electrical characteristics BYV26C BYV26D BYV26E Peak forward surge current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range I(BR)R = 1 A, inductive load tp = 10 ms, half sine wave SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IF(AV) ER Tj = Tstg VALUE 200 400 600 800 1000 30 1 10 - 55 to + 175 UNIT V V V V V A A mJ C

MAXIMUM THERMAL RESISTANCE (Tamb = 25 C, unless otherwise specified)

PARAMETER Junction ambient TEST CONDITION l = 10 mm, TL = constant SYMBOL RthJA VALUE 45 UNIT K/W

Rev. 1.8, 04-Sep-12

Document Number: 86040 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BYV26A, BYV26B, BYV26C, BYV26D, BYV26E

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Vishay Semiconductors

ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

PARAMETER Forward voltage Reverse current TEST CONDITION IF = 1 A IF = 1 A, Tj = 175 C VR = VRRM VR = VRRM, Tj = 150 C BYV26A BYV26B Reverse breakdown voltage IR = 100 A BYV26C BYV26D BYV26E BYV26A BYV26B Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A BYV26C BYV26D BYV26E PART SYMBOL VF VF IR IR V(BR)R V(BR)R V(BR)R V(BR)R V(BR)R trr trr trr trr trr MIN. 300 500 700 900 1100 TYP. MAX. 2.5 1.3 5 100 30 30 30 75 75 UNIT V V A A V V V V V ns ns ns ns ns

TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

PR - Max. Reverse Power Dissipation (mW)

600 VR = VRRM 500 400 300 600 V 200 100 1000 V 0 0 40 80 120 160 200 800 V RthJA = 45 K/W RthJA = 100 K/W 200 V 400 V

1.2

IFAV - Average Forward Current (A)

1.0 RthJA = 45 K/W 0.8 0.6 0.4 RthJA = 100 K/W 0.2 0 0 40 80 120 160 200

959728

Tj - Junction Temperature (C)

959730

Tamb - Ambient Temperature (C)

Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature

Fig. 3 - Max. Average Forward Current vs. Ambient Temperature

1000 VR = VRRM

10 Tj = 175 C

IR - Reverse Current (A)

IF - Forward Current (A)

100

1 Tj = 25 C 0.1

10

0.01

0.1 0
959729

0.001 40 80 120 160 200

959731

Tj - Junction Temperature (C)

VF - Forward Voltage (V)

Fig. 2 - Max. Reverse Current vs. Junction Temperature

Fig. 4 - Max. Reverse Current vs. Junction Temperature

Rev. 1.8, 04-Sep-12

Document Number: 86040 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BYV26A, BYV26B, BYV26C, BYV26D, BYV26E

www.vishay.com

Vishay Semiconductors

40 f = 1 MHz

40 f = 1 MHz

CD - DiodeCapacitance (pF)

CD - Diode Capacitance (pF)

35 30 BYV26C 25 20 15 10 5 0 0.1 1 10 100

35 30 BYV26E 25 20 15 10 5 0 0.1 1 10 100

16380

VR - Reverse Voltage (V)

16381

VR - Reverse Voltage (V)

Fig. 5 - Diode Capacitance vs. Reverse Voltage

Fig. 6 - Diode Capacitance vs. Reverse Voltage

PACKAGE DIMENSIONS in millimeters (inches): SOD-57

0.82 (0.032) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min.

Rev. 1.8, 04-Sep-12

Document Number: 86040 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

3.6 (0.142) max.

20543

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Revision: 02-Oct-12

Document Number: 91000