BC177 BC178-BC179

LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS

DESCRIPTION The BC177, BC178 and BC179 are silicon planar epitaxial PNP transistors in TO-18 metal case.They are suitable for use in driver audio stages, low noise input audio stages and as low power, high gain general purpose transistors. The complementary NPN types are respectively the BC107, BC108 and BC109.

TO-18

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V CES V CEO V EBO IC I CM Pt o t T st g Tj January 1989 Parameter Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Peak Current Total Power Dissipation at T amb 25 C Storage Temperature Junction Temperature Value BC177 50 45 BC178 30 25 5 100 200 300 65 to 175 175 BC179 25 20 Unit V V V mA mA mW C C 1/6

This datasheet has been downloaded from http://www.digchip.com at this page

BC177-BC178-B179
THERMAL DATA
R t h j- cas e R t h j -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Ma x Ma x 200 500 C/W C/W

ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified)

Symbol I CE S V (BR)CE O * Parameter Collector Cutoff Current (V BE = 0) Collector-emitter Breakdown Voltage (I B = 0) Collector-emitter Breakdown Voltage (V BE = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Voltage Base-emitter Saturation Voltage Small Signal Current Gain Test Conditions V CE = 20 V V CE = 20 V I C = 2 mA for BC177 for BC178 for BC179 I C = 10 A for BC177 for BC178 for BC179 I E = 10 A 50 30 25 5 V V V V 45 25 20 V V V T amb = 150 C Min. Typ. 1 Max. 100 10 Unit nA A

V (B R)CES

V (B R)E BO

V CE( sat )* VB E * V BE (s at ) hfe

I C = 10 mA I C = 100 mA I C = 2 mA I C = 10 mA I C = 100 mA I C = 2 mA f = 1 kHz

I B = 0.5 mA I B = 5 mA V CE = 5 V I B = 0.5 mA I B = 5 mA V CE = 5 V for for for for for BC177 BC177 BC178 BC178 BC179 Gr. A Gr. B Gr. A Gr. B Gr. B 125 240 125 240 240 550

75 200 640 720 860

250 750

mV mV mV mV mV

260 500 260 500 500

* Pulsed : pulsed duration = 300 s, duty cycle = 1 %.

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BC177-BC178-BC179
ELECTRICAL CHARACTERISTICS (continued)
Symbol fT C CBO NF Parameter Transition Frequency Collector-base Capacitance Noise Figure Test Conditions I C = 10 mA f = 100 MHz IE = 0 I C = 0.2 mA R g = 2 k B = 200 Hz V CE = 5 V V CB = 10 V V CE = 5 V f = 1 kHz for BC177 for BC178 for BC179 h ie Input Impedance I C = 2 mA f = 1 kHz V CE = 5 V for for for for for hre Reverse Voltage Ratio I C = 2 mA f = 1 kHz BC177 BC177 BC178 BC178 BC179 Gr. A Gr. B Gr. A Gr. B Gr. B 2.7 5.2 2.7 5.2 5.2 k k k k k 2 2 1.2 10 10 4 dB dB dB Min. Typ. 200 5.0 Max. Unit MHz pF

V CE = 5 V for for for for for BC177 BC177 BC178 BC178 BC179 Gr. A Gr. B Gr. A Gr. B Gr. B 2.7x10 4 4.5x10 4 2.7x10 4 4.5x10 4 4.5x10 4

hoe

Output Admittance

I C = 2 mA f = 1 kHz

V CE = 5 V for for for for for BC177 BC177 BC178 BC178 BC179 Gr. A Gr. B Gr. A Gr. B Gr. B 25 35 25 35 35 S S S S S

DC Transconductance.

DC Normalized Current Gain.

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BC177-BC178-B179
Collector-emitter Saturation Voltage. Normalized h Parameters.

Normalized h Parameters.

Collector-base Capacitance.

Transition Frequency.

Power Rating Chart.

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BC177-BC178-BC179

TO-18 MECHANICAL DATA

mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch

D G I H E F

L C B

0016043

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BC177-BC178-B179

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A

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