PD - 9.

1280C

IRF4905
HEXFET Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l

VDSS = -55V
G S

RDS(on) = 0.02 ID = -74A

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings

Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw

Max.
-74 -52 -260 200 1.3 20 930 -38 20 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)

Units
A W W/C V mJ A mJ V/ns C

Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

Typ.
0.50

Max.
0.75 62

Units
C/W

8/25/97

IRF4905
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ

RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD LS Ciss Coss Crss

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance

Min. -55 -2.0 21

Typ. -0.05 18 99 61 96 4.5 7.5 3400 1400 640

Max. Units Conditions V VGS = 0V, ID = -250A V/C Reference to 25C, I D = -1mA 0.02 VGS = -10V, ID = -38A -4.0 V VDS = VGS , ID = -250A S VDS = -25V, I D = -38A -25 VDS = -55V, VGS = 0V A -250 VDS = -44V, VGS = 0V, T J = 150C 100 V GS = 20V nA -100 VGS = -20V 180 ID = -38A 32 nC VDS = -44V 86 V GS = -10V, See Fig. 6 and 13 VDD = -28V I D = -38A ns RG = 2.5 RD = 0.72, See Fig. 10 Between lead, 6mm (0.25in.) nH G from package and center of die contact VGS = 0V pF VDS = -25V = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS
ISM

VSD t rr Q rr t on

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Min. Typ. Max. Units

Conditions D MOSFET symbol -74 showing the A G integral reverse -260 p-n junction diode. S -1.6 V TJ = 25C, IS = -38A, V GS = 0V 89 130 ns TJ = 25C, IF = -38A 230 350 C di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD -38A, di/dt -270A/s, VDD V(BR)DSS ,

TJ 175C

Starting TJ = 25C, L = 1.3mH

RG = 25, IAS = -38A. (See Figure 12)

Pulse width 300s; duty cycle 2%.

IRF4905
1000
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4. 5V TOP

1000

-ID , D ra in -to -S o u rce C u rre n t (A )

-ID , D ra in -to -S o u rc e C u rre n t (A )

VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4. 5V TOP

100

100

10

-4.5 V

10

-4.5 V

1 0.1 1

2 0 s PU LS E W ID TH T c = 2 5C A
10 100

1 0.1 1

20 s PU LSE W ID TH TC = 1 75C
10

100

-VD S , Drain-to-Source Voltage (V)

-VD S , Drain-to-Source V oltage (V )

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

2.0

R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d )

I D = -6 4A

-I D , D rain -to- S our ce C urr ent ( A )

TJ = 2 5 C
100

1.5

TJ = 1 7 5 C

1.0

10

0.5

1 4 5 6 7

V DS = -2 5 V 2 0 s P U L S E W ID T H
8 9 10

0.0 -60 -40 -20 0 20 40 60 80

VG S = -10 V

100 120 140 160 180

-VG S , Ga te-to-S o urce V oltage (V )

T J , Junction T em perature (C )

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

IRF4905
7000

6000

-V G S , G a te -to -S o u rce V o lta g e (V )

V GS C is s C rs s C o ss

= 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds + C g d

20

I D = -3 8A VDS = - 44V VDS = - 28V

16

C , C a p a c ita n c e (p F )

5000

C is s
4000

12

C o ss
3000

2000

C rs s

1000

0 1 10 100

0 0 40 80

FOR TE ST C IR C U IT SE E FIG U R E 1 3
120 160

200

-VD S , Drain-to-Source V oltage (V)

Q G , Total G ate C harge (nC)

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

1000

1000

-IS D , R e ve rse D ra in C u rre n t (A )

OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n)

100

-I D , D ra in C u rre n t (A )

100 100 s

T J = 17 5C T J = 25 C
10

1m s 10 10m s

1 0.4 0.6 0.8 1.0 1.2 1.4

VG S = 0 V
1.6

1 1

T C = 2 5C T J = 1 75C Sin gle Pu lse

10 100

1.8

-VS D , S ource-to-Drain V oltage (V )

-VD S , Drain-to-Source V oltage (V )

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

IRF4905
80

VDS VGS I D , Drain Current (A)

60

RD

D.U.T.
+

RG

VDD

-10V
40
Pulse Width 1 s Duty Factor 0.1 %

Fig 10a. Switching Time Test Circuit

20
td(on) tr t d(off) tf

VGS

0 25 50 75 100 125 150 175

10%

TC , Case Temperature

( C)
90%

Fig 9. Maximum Drain Current Vs. Case Temperature

VDS

Fig 10b. Switching Time Waveforms

(Z thJC )

D = 0.50

0.20

Thermal Response

0.1

0.10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1

0.01 0.00001

0.0001

t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF4905
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
VDS L 2500

TO P
2000

RG

D .U .T IA S D R IV E R
0 .0 1

VD D A

BOT TO M

ID -1 6A - 27A -38 A

- 20V tp

1500

1000

15V

Fig 12a. Unclamped Inductive Test Circuit

500

0 25 50 75 100 125 150

A
175

I AS

Starting TJ , Junction T emperature (C)

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

tp V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator Same Type as D.U.T.

50K

QG

12V

.2F

-10V
QGS VG QGD
VGS

.3F

D.U.T.

+VDS

-3mA

Charge

IG

ID

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

IRF4905
Peak Diode Recovery dv/dt Test Circuit
D.U.T*

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

RG VGS dv/dt controlled by RG I SD controlled by Duty Factor "D" D.U.T. - Device Under Test

+ VDD

Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive P.W. Period D=

P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

[ VDD]

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

[ ISD]

*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS

IRF4905
Package Outline
TO-220AB Outline Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 ) 2 . 6 2 ( .1 0 3 ) 1 0 . 5 4 (. 4 1 5 ) 1 0 . 2 9 (. 4 0 5 ) 3 . 7 8 (. 1 4 9 ) 3 . 5 4 (. 1 3 9 ) -A 6 . 4 7 (. 2 5 5 ) 6 . 1 0 (. 2 4 0 ) -B 4 . 6 9 ( .1 8 5 ) 4 . 2 0 ( .1 6 5 ) 1 .3 2 (. 0 5 2 ) 1 .2 2 (. 0 4 8 )

4 1 5 . 2 4 ( .6 0 0 ) 1 4 . 8 4 ( .5 8 4 )

1 . 1 5 ( .0 4 5 ) M IN 1 2 3

L E A D A S S IG N M E N T S 1 - G A TE 2 - D R AIN 3 - SO URCE 4 - D R AIN

1 4 . 0 9 (.5 5 5 ) 1 3 . 4 7 (.5 3 0 )

4 . 0 6 (. 1 6 0 ) 3 . 5 5 (. 1 4 0 )

3X

1 .4 0 (. 0 5 5 ) 1 .1 5 (. 0 4 5 )

0 . 9 3 ( .0 3 7 ) 3 X 0 . 6 9 ( .0 2 7 ) 0 .3 6 (. 0 1 4 ) M B A M

3X

0 . 5 5 (. 0 2 2 ) 0 . 4 6 (. 0 1 8 )

2 . 5 4 ( .1 0 0 ) 2X NO TE S : 1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L I N G D IM E N S IO N : I N C H

2 .9 2 (. 1 1 5 ) 2 .6 4 (. 1 0 4 )

3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

Part Marking Information

TO-220AB E XPLE AM PLE S A IS N 1010 IRF 1010 E X AM : T:HI T SHI IS N AIRF W H AE SMB S ELY MB LY W IT H IT A SS LO T DE CO DE 9B 1M LO T CO 9B 1M
A A

IN TE RT NA T ION IN TE R NA ION AL AL RT EC T IF IER R EC IF IER F 1010 IR F IR 1010 LO GO LO GO 9246 9246 9B 9B1M 1M AEM S SB EM B LY ASS LY LO T CO LO T CO DE DE

P A RT NU MR BE R P A RT NU M BE

D A TE CE OD E D A TE C OD (Y YW W ) (Y YW W ) = A YE YY Y =Y YE R AR W= WW = EW E EK WW EK

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.