Analysis of the Heat Transfer Characteristics in a Thermoelectric Conversion Device

Kohei Kawabuchi, Toshiaki Yachi Yachi Laboratory, Department of Electrical Engeering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo, 162-0825, Japan E-mail j4312616@ed.kagu.tus.ac.jp
AbstractThermoelectric power generation systems directly transform thermal energy into electric energy using thermoelectric conversion elements. However, the performance enhancement of thermoelectric conversion materials is difficult now. Moreover, generation efficiency is low because the heat loss occurs in a device. Therefore the heat electric conversion system is hardly used. To reduce the heat loss in a thermoelectric conversion system, the contact plate material in the device was changed from a ceramic to copper. This material provided a grooved interlocking of the contact plate. In this study, the optimal shape of the proposed contact plate material was analyzed by computer simulation. The heat loss was found to depend on the shape of the interlocking grooves in the contact plate, and decreased with increasing contact area and pitch width. Keywords-thermoelectric; heat loss; grooved interlocking plate; heat transfer; computer simulation

II.

-TYPE THERMOELECTRIC CONVERSION DEVICE

A. Power generation principle Thermoelectric conversion element is composed of the thermoelectric conversion material of p-type and n-type semiconductor and the electrode. Electromotive force will be produced if the difference in temperature establish in the both ends of this. The basic composition of thermoelectric conversion elements is shown in Fig. 2, and an energy band model is shown in Fig. 3, respectively.

I.

INTRODUCTION
Figure 2. The basic configuration of the thermoelectric conversion element

In recent years, effective use of fossil energy resources has been an important issue with respect to problems such as fossil fuel depletion and global warming. Waste heat is recovered using heat pumps or steam electric generation from exhaust heat (600-1000 K) produced at garbage incineration sites or the thermal power stations. However, efficient heat recovery technology has not been established for exhaust heat less than or equal to 500 K. Thermoelectric conversion devices provide clean power generation by the direct conversion of exhaust heat to electricity at low temperatures. Thermoelectric conversion devices are easily maintained because there are no moving parts, so that a device lifetime as long as tens of years can be achieved. However, the power generation efficiency of thermoelectric conversion devices is low, so that their use is limited to small customized power supplies for satellite or military applications.

Figure 3. Energy band model of a thermoelectric conversion element

Figure 1. Year waste heat and temperature in Japan

The electron in the conduction band of the high temperature side metal obtains thermal energy, and flies up to the conduction band of the n-type semiconductor. The electron flows to the low temperature side direction by electronic concentration gradient in the conduction band of the n-type semiconductor. And the flowed electron falls to the conduction band of the low temperature side metal when heat energy is

The part of the funding for this work was provided by the Japan MEXT Grants-Aid for scientific research (B), 24360112.

released. The electron in the valence band of the high temperature side p-type semiconductor is released. And the positive hole is generated. The released electron in the valence band of the high temperature side p-type semiconductor flies up to the conduction band of the high temperature side metal by thermal energy. The generated positive hole flows to the low temperature side direction by positive holes concentration gradient in the valence band of the p-type semiconductor. The electron which flowed through low temperature side metal from n-type semiconductor falls to the positive hole of the ptype semiconductor. At this time, the positive hole disappears and releases heat. Thus, the thermoelectric conversion element generates electricity when the carrier moves by thermal energy. B. -type thermoelectric conversion device Fig. 4 shows a -type thermoelectric conversion device, which consists of an electrode, p-type and n-type semiconductors in series. The structure is fixed to a ceramic plate for protection and insulation of the thermoelectric conversion materials. The amount of power generated by the type thermoelectric conversion device can be adjusted according to the number of semiconductor pairs, and many pairs of semiconductors can be formed in a small area. However, a local failure affects the entire device, because the components are connected in series. In addition, the amount of heat conducted to the thermoelectric conversion material from the heat source is low, due to heat loss from the ceramic plate.

conversion device. In addition, insulating films are inserted between the contact plate and the electrode. Furthermore, in order to enlarge the contact area of the contact plate and the heat exchanger plate, grooved interlocking is established on the contact surface of the contact plate and the heat exchanger plate. A. Simulation method In a previous experimental study, only the relation between the contact area and the thermal resistance was considered [1]. In this study, computer simulations were conducted to evaluate the portions of the proposed contact plate and heat exchanger plate using the COMSOL simulation software [2]. The effect of the grooved interlocking pitch width and depth on the thermal resistance was investigated. In addition, the effect of the grooved interlocking form on the thermal resistance was also examined. B. Simulation conditions The size of both the contact plate and the heat exchanger plate were 4040 mm2. The material from which thermal conductivity differs was inserted instead of contact resistance between the contact plate and the heat exchanger plate. The heat source temperature was 493.15 K, which was applied from the upper part of the heat exchanger plate. The simulation model considered heat flow of 30 W from the lower heat exchanger plate [3]. Both the pitch width and depth of the interlocking grooves were varied from 0.5 to 10 mm for the V form type interlocking grooves. The simulation model computed the thermal resistance of the contact plate and the heat exchanger plate as the contact area was increased. The same simulation conditions were applied to rectangular form interlocking grooves for comparison of the thermal resistance with the V form. IV.
RESULTS AND DISCUSSION

Figure 4. -Type Thermoelectric Conversion Device

III.

SIMULATION METHOD AND CONDITIONS

A. Contact area ratio and thermal resistance The contact area 17.2 cm2, 81.8 cm2 and 160.8 cm2 of simulation result are as shown in Fig. 6, Fig. 7 and Fig. 8 respectively. Simulation results are shown that heat loss is occurring at the contact surface of the contact plate and the heat exchanger plate. However, a large temperature change has not occurred in the contact plate and the heat exchanger plate. When contact areas increase from 17.2 cm2 to 160.8 cm2, the temperature in the lower part of contact plate has risen about 4.5 K. That is, the thermal loss in the contact surface is reduced.

Figure 5. Composition of Proposed Thermoelectric Conversion Device

A structure for improvement of the heat transfer characteristics of a -type thermoelectric conversion device has been previously proposed [1], as shown in Fig. 5. The ceramic plate is changed to a copper plate in the -type thermoelectric

Figure 6. The simulation result (contact surface 17.2cm2)

B. The effect of pitch width and interlocking groove depth on the thermal resistance The contact area is 35.8 cm2 and changed the depth and the pitch width of the interlocking grooves with 1 mm, 4 mm and 8 mm, respectively. Those simulation results are shown in Fig. 10, Fig. 11 and Fig. 12.

Figure 7. The simulation result (contact surface 81.8cm2)

Figure 10. The simulation result ( depth and pitch width : 1 mm)

Figure 8. The simulation result (contact surface 160.8cm2)

For a contact plate and heat exchanger plate without grooved interlocking, the contact area ratio is considered to be 1. Fig. 9 shows the experimental and simulated thermal resistance as a function of the contact area ratio. As the contact area ratio is increased, both the simulated and experimental thermal resistance decreases with inverse proportion. Even when the contact area ratio is the same, i.e., when the depth and the pitch width of the grooved interlocking differ from each other, the simulated and experimental thermal resistance are different.

Figure 11. The simulation result ( depth and pitch width : 4 mm)

Figure 12. The simulation result ( depth and pitch width : 8 mm)

When the contact area is the same (i.e., the depth and the pitch width of the grooved interlocking differ from each other), Fig. 13 shows the thermal resistance as a function of the interlocking groove pitch width. Fig. 14 shows the thermal resistance as a function of the interlocking groove depth. Even when the contact area is the same, the thermal resistance varies according to the heat loss in the contact surface. The thermal resistance decreases in inverse proportion to the depth and the pitch width of the interlocking grooves. The thermal resistance is reduced with increasing the depth and the pitch width of the interlocking grooves at three contact areas. Therefore, it is guessed that a similar result can be obtained at all contact areas.

Figure 9. Thermal resistance as a Function of the Contact Area Ratio

Figure 16. The simulation result (Rectangular form grooved interlocking)

Figure 13. Thermal Resistance as a Function of Pitch Width for Various Contact Areas

The V form grooved interlocking of the temperature which gets across to the lower part of the contact plate is larger about 1.4K compared with the rectangular grooved interlocking. That is, even when the contact area approximates, if the form of the grooved interlocking differs, the temperature which gets across to the lower part of the contact plate also differs. Fig. 17 shows a comparison of the thermal resistance for the V form and rectangular form grooved interlocking with change in the contact area ratio. The different grooved interlocking forms result in different thermal resistances at the same contact area ratios..

Figure 14. Thermal Resistance as a Function of Groove Depth for Various Contact Areas

C. The effect of interlocking groove form on the thermal resistance Fig. 15 and Fig. 16 show the simulation result of the V form 30.2cm2 and rectangular form 30.0cm2 grooved interlocking.
Figure 17. Thermal resistance as a Function of the Interlocking Groove Form

Figure 15. The simulation result (V form grooved interlocking)

In the contact area ratio 1.25 neighborhoods, the thermal resistances of V form and rectangular form groove does not have great difference. However, when the contact area ratio increases, the rate that the thermal resistance of the rectangular form grooved interlocking decreases compared with V form grooved interlocking is small. The heat is moving toward the contact plate lower part from the heat exchanger plate upper part. The rectangular grooved interlocking has a big aspect coming in contact with the contact plate perpendicularly. Therefore, it is guessed that this is because the heat movement between the heat exchanger plate and the contact plate is smaller than the V form grooved interlocking.

V.

CONCLUSIONS

Analysis was conducted for the heat transfer of the contact plate and the heat exchanger plate in a thermoelectric conversion device by the simulation. And the following results were obtained. If the contact area of the contact and heat exchanger plates is increased, then the thermal resistance is reduced. Thus, the heat loss from the contact and heat exchanger plates will decrease. Therefore, an increase in the contact area is effective for reduction of the thermal resistance. If at the same grooved interlocking form the contact area is the same or close and the depth or the pitch width of the grooved interlocking is larger, then the thermal resistance will be reduced. When designing the groove of the contact plate and the heat exchanger plate, should be to determine the value of the depth and the pitch width of the groove so as to increase the contact area. And if the designed contact
[1] [2] [3]

area is the same or near, it becomes advantageous to reduction of the thermal resistance that the pitch width of the groove is large. Different interlocking groove forms result in different amounts of thermal resistance reduction. An interlocking groove form where the contact surface parallel to the contact plate is increased is more advantageous than that where the contact surface is increased perpendicular to the contact plate. REFERENCES
N. Nozaki et al. Reducing a Thermal Resistance of a Thermoelectric Module by using Grooved Interlocking Plates, IEEJ Trans. PE, Vol. 123, No. 2, pp. 194-200, 2003. COMSOL Multiphysics, A Modeling Guide, Co.COMSOL, pp. 135139, 2005. I. Abe et al. The Basic Characteristic of a Thermoelectric Semiconductor Besides, NTT Research and Development Headquarters, Research and Development Data, No. 12065, pp. 1-18, 1995. Co. OHM, The technical Synthesis Magazine OHM, Co.OHM, pp.17-24, 2011.

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