UNISONIC TECHNOLOGIES CO.

, LTD 30N06
30 Amps, 60 Volts N-CHANNEL POWER MOSFET
1

MOSFET

DESCRIPTION
The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.

TO-220

TO-220F

FEATURES
* RDS(ON) = 40m@VGS = 10 V * Ultra low gate charge ( typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability *Pb-free plating product number: 30N06L

SYMBOL
2.Drain

1.Gate

3.Source

ORDERING INFORMATION
Order Number Package Normal Lead Free Plating 30N06-TA3-T 30N06L-TA3-T TO-220 30N06-TF3-T 30N06L-TF3-T TO-220F Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S Packing Tube Tube

30N06L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating , Blank: Pb/Sn

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ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate to Source Voltage SYMBOL VDSS VGSS

MOSFET

RATINGS UNIT 60 V 20 V TC = 25 30 A Continuous Drain Current ID TC = 100 21.3 A Pulsed Drain Current (Note 1) IDM 120 A Avalanche Energy, Single Pulsed (Note 2) EAS 300 mJ Repetitive Avalanche Energy (Note 1) EAR 8 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 7.5 V/ns Total Power Dissipation (TC = 25) 80 W PD 0.53 W/ Derating Factor Above 25 Operation Junction Temperature TJ -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient SYMBOL JC CS JA MIN TYP 0.5 62.5 MAX 1.8 UNIT C/W C/W C/W

ELECTRICAL CHARACTERISTICS (TC = 25, unless otherwise specified)

PARAMETER Off Characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Forward Current Reverse Breakdown Voltage Temperature Coefficient On Characteristics Gate Threshold Voltage Static Drain-Source On-State Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0 V, ID = 250 A VDS = 60 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 150 VGS = 20V, VDS = 0 V VGS = -20V, VDS = 0 V MIN TYP MAX UNIT 60 1 10 100 -100 0.06 2.0 32 800 300 80 12 79 50 52 20 6 9 4.0 40 V A A nA nA V/ V m pF pF pF ns ns ns ns nC nC nC

BVDSS/TJ ID = 250 A, Referenced to 25 VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS = VGS, ID = 250 A VGS = 10 V, ID = 15 A

VGS = 0 V, VDS = 25 V, f = 1MHz

VDD = 30V, ID =15 A, VGS=10V (Note 4, 5) VDS = 60V, VGS = 10 V, ID = 24A (Note 4, 5)

30

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ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER SYMBOL Source-Drain Diode Ratings and Characteristics Diode Forward Voltage VSD Maximum Continuous Drain-Source Diode Forward Current IS TEST CONDITIONS IS = 30A, VGS = 0 V
Integral Reverse p-n Junction Diode in the MOSFET
D

MOSFET

MIN TYP MAX UNIT 1.4 30 V A

Maximum Pulsed Drain-Source Diode Forward Current

ISM

G S

120

Reverse Recovery Time tRR IS = 30A, VGS = 0 V dI Reverse Recovery Charge QRR F / dt = 100 A/s (Note4) Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=19.5mH, IAS=30A, RG=20, Starting TJ=25 3. ISD50A, di/dt300A/s, VDDBVDSS, Starting TJ=25 4. Pulse Test: Pulse Width300s,Duty Cycle2% 5. Essentially independent of operating temperature.

40 70

ns C

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TEST CIRCUITS AND WAVEFORMS

MOSFET

D.U.T.

+ VDS -

+ L

RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS (Driver)

P.W.

Period

D=

P. W. Period

VGS= 10V

I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt

Body Diode Recovery dv /dt VDS (D.U.T.) VDD

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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TEST CIRCUITS AND WAVEFORMS (Cont.)
RL VDD

MOSFET

VDS VGS RG

VDS

90%

10V
Pulse Width 1s Duty Factor 0.1%

D.U.T.

VGS

10%
t D(ON ) tR tD (OFF) tF

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

50k 12V 0.2F 0.3 F

Same Type as D.U.T. 10V VDS QGS

QG

QGD

VGS DUT 1mA VG

Charge

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

L VDS BVDSS

RG

VDD D.U.T.

10V tp

IAS

tp

Time

Fig. 4A Unclamped Inductive Switching Test Circuit

Fig. 4B Unclamped Inductive Switching Waveforms

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TYPICAL CHARACTERISTICS
On-State Characteristics
V GS Top: 15V 10 V 8 V 7 V 102 6 V 5 .5V 5V Bottorm : 4.5V

MOSFET

Transfer Characteristics

Drain Current, ID (A)

Drain Current, ID (A)

25

101

4.5V

10 1

1 50

102

Note: 1. VDS=25V 2. 20s Pulse Test 100 2 4 5 6 7 8 9 10 3 Gate-Source Voltage, VGS (V)

100

10-1

101 10 0 Drain-Source Voltage, VDS (V)

Drain-Source On-Resistance, RDS(ON) (m)

On-Resistance Variation vs . Drain Current and Gate Voltage 100 80 60 VGS=10V 40 VGS=20V 20 0.0 0 Reverse Drain Current, ISD (A)

Reverse Drain Current vs. Allowable Case Temperature 102

150 10 1 25 *Note: 1. VGS=0V 2. 250s Test 1.6

20

40

60

80

100 120

Drain Current, I D (A)

10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Voltage , VSD (V)

2000

Gate-to-Source Voltage, VGS (V)

Capacitance (pF)

1500

Capacitance Characteristics (Non-Repetitive) C iss= Cgs +Cgd (C ds=shorted) C oss=Cds +Cgd C rss=C gd Coss Ciss *Note: 1. VGS=0V 2. f = 1MHz

Gate Charge Characteristics 12 10 8 6 4 2 0 0 *Note: I D=30A 10 15 20 5 Total Gate Charge, QG (nC) 25 VDS=30V VDS=48V

1000

500 C rss 0 0.1 1 10 Drain-Source Voltage, VDC (V)

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TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs . Junction Temperature 1.2 1.1 On-Resistance Variation vs . Junction Temperature

MOSFET

Drain-Source On-Resistance, RDS(ON), (Normalized)

Drain-Source Breakdown Voltage, BVDSS(Normalized)

3.0 2.5 2.0 1.5 1.0 0.5 0.0

1.0 *Note: 1. VGS=0V 2. ID=250A -50 0 50 100 150 200

0.9

*Note: 1. VGS=10V 2. I D=15A -50 0 50 100 150 Junction Temperature, T J ()

0.8 -100

Junction Temperature, T J ()

Maximum Safe Operating 100

Drain Current , ID,(A)

Maximum Drain Current vs. Case Temperature 30

Drain Current, I D (A)

Operation in This Area by RDS (ON) 100s 10ms DC 1ms

10

20

0.1 1

*Note: 1. T c=25 2. T J=150 3. Single Pulse 10 100 1000 Drain-Source Voltage, VDS (V)

10

25

50

75

100

125

150

Case Temperature, T C ()

Transient Thermal Response Curve

Thermal Response, ZJC (t)

D=0.5 0.2

0.1

0.1

0.05 0.02 0.01 Single pulse

*Note: 1. ZJ C (t) = 0.88 /W Max. 2. Duty Factor , D=t1/t2 3. TJ -TC =PDMZJ C (t)

0.01

10 1 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration , t 1 (sec)

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MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

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