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BDW94/C PNP Epitaxial Silicon Transistor
January 2005
BDW94/C
PNP Epitaxial Silicon Transistor Power Linear and Switching Application
Power Darlington TR Complement to BDW93 and BDW93C Respectively
TO-220 2.Collector 3.Emitter
1.Base
Absolute Maximum Ratings

Symbol
VCBO Collector-Base Voltage
Ta = 25C unless otherwise noted
Parameter
: BDW94 : BDW94C
Value
-45 -100 -45 -100 -12 -15 -0.2 80 150 -65 ~ 150
Units
V V V V A A A W C C
VCEO
Collector-Emitter Voltage : BDW94 : BDW94C
IC ICP IB PC TJ TSTG
Collector Current (DC) Collector Current (Pulse) * Base Current Collector Dissipation (TC = 25C) Junction Temperature Storage Temperature
2005 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BDW94/C Rev. B
Electrical Characteristics
Symbol
VCEO(sus)
TC = 25C unless otherwise noted
Parameter
Collector-Emitter Sustaining Voltage : BDW94 : BDW94C Collector Cut-off Current : BDW94 : BDW94C
Conditions
IC = -100mA, IB = 0
Min.
-45 -100
Typ.
Max
Units
V V
ICBO
VCB = -45V, IE = 0 VCB = -100V, IE = 0 VEB = -45V, IB = 0 VCE = -100V, IB = 0 VEB = -5V, IC = 0 VCE = -3V, IC = -3A VCE = -3V, IC = -5A VCE = -3V, IC = -10A IC = -5A, IB = -20mA IC = -10A, IB = -100mA IC = -5A, IB = -20mA IC = -10A, IB = -100mA IF = -5A IF = -10A -1.3 -1.8 1000 750 100
-100 -100 -1 -1 -2 20000 -2 -3 -2.5 -4 -2 -4
A A mA mA mA
ICEO
Collector Cut-off Current : BDW94 : BDW94C
IEBO hFE
Emitter Cut-off Current DC Current Gain *
VCE(sat) VBE(sat) VF
Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Parallel Diode Forward Voltage *
V V V V V V
* Pulse Test: PW = 300s, Duty Cycle = 1.5% Pulsed
2 BDW94/C Rev. B
Typical Performance Characteristics

Figure 1. DC Current Gain
100k
Figure 2. Collector-Emitter Saturation Voltage

-10
VCE = -3V
10k
VCE(sat) [V], SATURATION VOLTAGE
IC= 250 IB
hFE, DC CURRENT GAIN
-1
1k
100 -0.1
-1
-10
-100
-0.1 -0.1
-1
-10
-100
IC [A], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage

-20
1000
Figure 4. Output Capacitance

f=1MHz IE=0
VCE= -3V
-16
-12
Cob[pF], CAPACTIANCE
100
-8
-4
-0 -0.0
-0.8
-1.6
-2.4
-3.2
-4.0
10 -1 -10 -100
VBE [V], BASE-EMITTER VOLTAGE
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Safe Operating Area

-100
Figure 6. Power Derating

120
100
IC MAX.
-10
5 ms 1 ms 100uS
PC [W], POWER DISSIPATION

-1000
80
DC
60
-1
40
BDW94 BDW94A BDW94B BDW94C

-0.1 -1 -10 -100
20
0 0 50
o
100
150
200
250
VCE [V], COLLECTOR EMITTER VOLTAGE
Tc [ C], CASE TEMPERATURE
3 BDW94/C Rev. B
Mechanical Dimensions
TO-220
9.90 0.20
1.30 0.10 2.80 0.10
4.50 0.20
(8.70) 3.60 0.10
(1.70)
1.30 0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
4 BDW94/C Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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SPM Stealth SuperFET SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET UniFET VCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I15
5 BDW94/C Rev. B

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BDW94/C PNP Epitaxial Silicon Transistor

TO-220 2.Collector 3.Emitter

Absolute Maximum Ratings

Ta = 25C unless otherwise noted

Collector-Emitter Voltage : BDW94 : BDW94C

2005 Fairchild Semiconductor Corporation

BDW94/C PNP Epitaxial Silicon Transistor

TC = 25C unless otherwise noted

-100 -100 -1 -1 -2 20000 -2 -3 -2.5 -4 -2 -4

Collector Cut-off Current : BDW94 : BDW94C

Emitter Cut-off Current DC Current Gain *

* Pulse Test: PW = 300s, Duty Cycle = 1.5% Pulsed

BDW94/C PNP Epitaxial Silicon Transistor

Typical Performance Characteristics

Figure 2. Collector-Emitter Saturation Voltage

VCE(sat) [V], SATURATION VOLTAGE

hFE, DC CURRENT GAIN

IC [A], COLLECTOR CURRENT

IC [A], COLLECTOR CURRENT

Figure 3. Base-Emitter On Voltage

Figure 4. Output Capacitance

IC [A], COLLECTOR CURRENT

VBE [V], BASE-EMITTER VOLTAGE

VCB [V], COLLECTOR-BASE VOLTAGE

Figure 5. Safe Operating Area

Figure 6. Power Derating

IC [A], COLLECTOR CURRENT

PC [W], POWER DISSIPATION

BDW94 BDW94A BDW94B BDW94C

VCE [V], COLLECTOR EMITTER VOLTAGE

Tc [ C], CASE TEMPERATURE

BDW94/C PNP Epitaxial Silicon Transistor

(8.70) 3.60 0.10

0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]

BDW94/C PNP Epitaxial Silicon Transistor

LIFE SUPPORT POLICY

PRODUCT STATUS DEFINITIONS Definition of Terms

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