Ordering number:ENN779D

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1209/2SC2911
160V/140mA High-Voltage Switching and AF 100W Predriver Applications
Features
Adoption of FBET process. High breakdown voltage. Good linearity of hFE and small Cob. Fast switching speed.

Package Dimensions
unit:mm 2009B
[2SA1209/2SC2911]
8.0 4.0 2.7

3.0
1.5 7.0

1.6 0.8 0.8 0.6

3.0

11.0

( ) : 2SA1209

2.4 4.8

Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions

1.2

15.5

0.5

1 : Emitter 2 : Collector 3 : Base SANYO : TO-126

Ratings ()180 ()160 ()5 ()140 ()200 1

Unit V V V mA mA W W

Tc=25C

10 150 55 to +150

C C

Electrical Characteristics at Ta = 25C

Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob
R 100 to 200 S 140 to 280 T 200 to 400

Conditions VCB=()80V, IE=0 VEB=()4V, IC=0 VCE=()5V, IC=()10mA VCE=()10V, IC=()10mA VCB=()10V, f=1MHz

Ratings min typ max ()0.1 ()0.1 100* 150 (4.0)3.0 400*

Unit A A MHz pF

*: The 2SA1209/2SC2911 are classified by 10mA hFE as follows :

Rank hFE

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/D251MH/5147KI/3135KI/O193KI, TS No.779-1/5

2SA1209/2SC2911
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Turn-ON Time Fall Time Storage Time Symbol VCE(sat) ton tf tstg Conditions IC=()50mA, IB=()5mA See specified Test Circuit See specified Test Circuit See specified Test Circuit Ratings min typ 0.07 (0.14) 0.1 0.1 1.5 max 0.3 (0.4) Unit V s s s

Switching Test Circuit

IB1 IN 3k IB2 RB 50 5k + 1F --2V + 1F 20V OUT

2k

IC=10IB1=--10IB2=10mA (For PNP, the polarity is reversed.)

--140

IC -- VCE
2SA1209
. --0 6m A
--0.5 mA

140

IC -- VCE
mA 0.6

--120

120

0.5

mA

2SC2911

Collector Current, IC mA

Collector Current, IC mA

--100

--

A 0.4m
--0.3m A

0.4mA
0.3mA

100

--80

80

--60

--0.2mA

60

0.2mA

--40

--0.1mA
--20

40

0.1mA
20

IB=0
0 0 --10 --20 --30 --40 --50 --60 --70 0 0 10 20 30 40 50

IB=0
60 70

Collector-to-Emitter Voltage, VCE V

--140

ITR03021 140

Collector-to-Emitter Voltage, VCE V

ITR03022

IC -- VBE
2SA1209

IC -- VBE
2SC2911

--120

120

Collector Current, IC mA

--100

Collector Current, IC mA --0.2 --0.4 --0.6 --0.8 Base-to-Emitter Voltage, VBE V --1.0
ITR03023

100

--80

80

--60

60

--40

40

--20

20

0 0

0.2

0.4

0.6

0.8

1.0 ITR03024

Base-to-Emitter Voltage, VBE V

No.779-2/5

2SA1209/2SC2911
1000

hFE -- IC
2SA1209 VCE=--5V

1000

hFE -- IC
2SC2911 VCE=5V

Common Emitter DC Current Gain, hFE

5 3 2

Common Emitter DC Current Gain, hFE

7 5 3 2

100 7 5 3 2

100 7 5 3 2

10

7 --1.0

Collector Current, IC mA

7 --10

7 --100 2 ITR03025

10

7 1.0

Collector Current, IC mA

7 10

7 100 2 ITR03026

fT -- IC
Gain-Bandwidth Product, fT MHz
2SA1209 VCE=--10V

3 2

fT -- IC
2SC2911 VCE=10V

Gain-Bandwidth Product, fT MHz

100 7 5

100 7 5

3 2

3 2

10 --1.0

Collector Current, IC mA

--10

7 --100 2 ITR03027

10 1.0

Collector Current, IC mA

10

7 100 2 ITR03028

100 7

Cob -- VCB
2SA1209 f=1MHz

100 7

Cob -- VCB
2SC2911 f=1MHz

Output Capacitance, Cob pF

Output Capacitance, Cob pF

5 3 2

5 3 2

10 7 5 3 2

10 7 5 3 2

1.0 --1.0

--10

Collector-to-Base Voltage, VCB -- V

2

7 --100 ITR03029

1.0 1.0

10

Collector-to-Base Voltage, VCB -- V

1.0 7

7 100 ITR03030

VCE(sat) -- IC
2SA1209 IC / IB=10

VCE(sat) -- IC
2SC2911 IC / IB=10

Collector-to-Emitter Saturation Voltage, VCE (sat) V

Collector-to-Emitter Saturation Voltage, VCE (sat) V

5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 ITR03031

--1.0 7 5 3 2

5 3 2

0.1 7 5 3 2 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR03032

--0.1 7 5 3 2

Collector Current, IC mA

Collector Current, IC mA

No.779-3/5

2SA1209/2SC2911
--10 7

VBE(sat) -- IC
2SA1209 IC / IB=10

10 7

VBE(sat) -- IC
2SC2911 IC / IB=10

Base-to-Emitter Saturation Voltage, VBE (sat) V

Base-to-Emitter Saturation Voltage, VBE (sat) V

5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 ITR03033

3 2

3 2

--1.0 7 5

1.0 7 5

Collector Current, IC mA

7 1.0

Collector Current, IC mA

7 10

7 100 2 ITR03034

5 3 2

ASO
1.2

PC -- Ta
2SA1209 / 2SC2911

ICP=200mA IC=140mA
1s

100 7 5 3 2 10 7 5 3 2 2

Collector Dissipation, PC W

1.0

Collector Current, IC mA

1m s

DC

0.8

op

No
0.6

era

he

tio

at

sin

0.4

2SA1209 / 2SC2911 DC Single pulse (For PNP, minus sign is omitted.)

3 5

0.2

Collector-to-Emitter Voltage, VCE V

12

7 10

7 100

20

40

60

80

100

120

140

160

ITR03035

Ambient Temperature, Ta C

ITR03036

PC -- Tc
2SA1209 / 2SC2911

10

Collector Dissipation, PC W

0 0

20

40

60

80

100

120

140

160

Case Temperature, Tc C

ITR03037

No.779-4/5

2SA1209/2SC2911

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of July, 2002. Specifications and information herein are subject to change without notice.
PS No.779-5/5

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