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FDS9435A

October 2001

FDS9435A
30V P-Channel PowerTrench MOSFET
General Description
This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).

Features
5.3 A, 30 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability RDS(ON) = 50 m @ V GS = 10 V RDS(ON) = 80 m @ V GS = 4.5 V

Applications
Power management Load switch Battery protection

D D SO-8

DD

DD D D

5 6 7

4 3 2 1

Pin 1 SO-8

G G S S S S S S
TA=25oC unless otherwise noted

Absolute Maximum Ratings


Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
30 25
(Note 1a)

Units
V V A W

5.3 50 2.5 1.2 1 55 to +175

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ , TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics
R JA R JA R J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)

50 125 25

C/W C/W C/W

Package Marking and Ordering Information


Device Marking FDS9435A
2001 Fairchild Semiconductor Corporation

Device FDS9435A

Reel Size 13

Tape width 12mm

Quantity 2500 units

FDS9435A Rev D1(W)

FDS9435A

Electrical Characteristics
Symbol
BV DSS BV DSS TJ IDSS IGSSF IGSSR V GS(th) V GS(th) TJ RDS(on)

TA = 25C unless otherwise noted

Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)

Test Conditions
V GS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C V DS = 24 V, V GS = 25 V, V GS = 25 V V GS = 0 V V DS = 0 V V DS = 0 V

Min
30

Typ

Max Units
V

Off Characteristics
23 1 100 100 1 1.7 4.5 42 65 57 25 10 50 80 77 3 mV/C A nA nA V mV/C m

On Characteristics

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance

V DS = V GS , ID = 250 A ID = 250 A, Referenced to 25C V GS = 10 V, ID = 5.3 A V GS = 4.5 V, ID = 4 A V GS = 10 V, ID = 5.3 A, TJ =125C V GS = 10 V, V DS = 5 V, V DS = 5 V ID = 5.3 A

ID(on) gFS

A S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)

V DS = 15 V, f = 1.0 MHz

V GS = 0 V,

528 132 70

pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge

V DD = 15 V, V GS = 10 V,

ID = 1 A, RGEN = 6

7 13 14 9

14 24 25 17 14

ns ns ns ns nC nC nC

V DS = 15 V, V GS = 10 V

ID = 4 A,

10 2.2 2

DrainSource Diode Characteristics and Maximum Ratings


IS V SD
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward V GS = 0 V, IS = 2.1 A Voltage

2.1
(Note 2)

A V

0.8

1.2

a) 50C/W when mounted on a 1in2 pad of 2 oz copper

b) 105C/W when mounted on a .04 in2 pad of 2 oz copper

c) 125C/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%

FDS9435A Rev D1(W)

FDS9435A

Typical Characteristics

30 -5.0V V -ID , DRAIN CURRENT (A) 20 -4.5V V -4.0V 10 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = -10V -6.0V

2 1.8 VGS=-4.0V 1.6 -4.5V 1.4 1.2 1 0.8 0 1 2 3 4 5 6 0 6 12 18 24 30 -V DS , DRAIN TO SOURCE VOLTAGE (V) -5.0V -6.0V -7.0V -8.0V -10V

-3.5V -3.0V

-I D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.


0.25 RDS(ON) , ON-RESISTANCE (OHM)

1.6 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -5.3A VGS = -10V 1.4

ID = -2.8A 0.2

1.2

0.15 T A = 125o C 0.1 T A = 25o C 0.05

0.8

0.6 -50 -25 0 25 50 75 100 125 150 175 TJ , JUNCTION TEMPERATURE (oC)

0 2 4 6 8 10 -V GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Temperature.


15 -I S, REVERSE DRAIN CURRENT (A) V DS = -5V 12 -ID, DRAIN CURRENT (A) 125oC 9 T A = -55o C 25oC

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.


100 VGS =0V TA = 125o C 1 25oC 0.1 -55 oC 0.01

10

0.001

0 1 1.5 2 2.5 3 3.5 4 4.5 -V GS, GATE TO SOURCE VOLTAGE (V)

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDS9435A Rev D1(W)

FDS9435A

Typical Characteristics

10 -V GS, GATE-SOURCE VOLTAGE (V) ID = -5.3A 8 -15V CAPACITANCE (pF) 6 V DS = -5V -10V

800 700 600 CISS 500 400 300 COSS 200 100 f = 1 MHz V GS = 0 V

0 0 2 4 6 8 10 Q g, GATE CHARGE (nC)

CRSS 0 0 5 10 15 20 25 30 -V DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.


100 P(pk), PEAK TRANSIENT POWER (W) 100s RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 10 100ms 1s 1 VGS = -10V SINGLE PULSE R JA = 125 oC/W T A = 25o C 0.01 0.1 1 10 100 -V DS , DRAIN-SOURCE VOLTAGE (V) 10s DC 1ms 10ms 50

Figure 8. Capacitance Characteristics.

40

SINGLE PULSE RJA = 125C/W TA = 25C

30

20

0.1

10

0 0.001

0.01

0.1

1 t 1, TIME (sec)

10

100

1000

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power Dissipation.

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

1
D = 0.5 0.2

RJA(t) = r(t) + RJA RJA = 125 C/W


o

0.1

0.1 0.05 0.02 0.01

P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2

0.01
SINGLE PULSE

0.001 0.0001

0.001

0.01

0.1 t1, TIME (sec)

10

100

1000

Figure 11. Transient Thermal Response Curve.


Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDS9435A Rev D1(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series
DISCLAIMER

FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE

OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER

SMART START STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFET

VCX

STAR*POWER is used under license

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4