BAV99

Discrete POWER & Signal Technologies

N
BAV99
CONNECTION DIAGRAM

A7
2
1 2

SOT-23

High Conductance Ultra Fast Diode

Sourced from Process 1P.

Absolute Maximum Ratings*

Symbol
W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current

TA = 25C unless otherwise noted

Parameter

Value
70 200 600 700 1.0 2.0 -55 to +150 150

Units
V mA mA mA A A C C

Tstg TJ

Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA

TA = 25C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient

Max
BAV99 350 2.8 357

Units
mW mW/ C C/W

BAV99

High Conductance Ultra Fast Diode

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Electrical Characteristics
Symbol
BV IR

TA = 25C unless otherwise noted

Parameter
Breakdown Voltage Reverse Current

Test Conditions
I R = 100 A VR = 70 V VR = 25 V, TA = 150C VR = 70 V, TA = 150C I F = 1.0 mA I F = 10 mA I F = 50 mA I F = 150 mA VR = 0, f = 1.0 MHz I F = IR = 10 mA, IRR = 1.0 mA, RL = 100 I F = 10 mA, tr = 20 nS

Min
70

Max
2.5 30 50 715 855 1.0 1.25 1.5 6.0 1.75

Units
V A A A mV mV V V pF nS V

VF

Forward Voltage

CO TRR VFM

Diode Capacitance Reverse Recovery Time Peak Forward Voltage

Typical Characteristics
50 0 05 REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA
V V R R - REVERSE VOLTAGE (V)

150

IR - REVERSE CURRENT (nA)

1N4150 MMBD1201 1205 REVERSE CURRENT vs REVERSE VOLTAGE IR - 10 to 100 V

300 Ta= 25C 250 200 150 100 50 0 10 20 30 50 VR - REVERSE VOLTAGE (V) 70 100

Ta= 25C

140

130

120

110

3 5 10 20 30 50 I R - REVERSE CURRENT (uA)

100

GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature

FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA

V F V F - FORWARD VOLTAGE (mV)

FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA

V FF - FORWARD VOLTAGE (mV) V

485 Ta= 25C 450 400 350 300 250 225 1 2 3 5 10 20 30 50 100 IF - FORWARD CURRENT (uA) IF

725 Ta= 25C 700 650 600 550 500 450 0.1

0.2 0.3 0.5 1 2 3 5 IF - FORWARD CURRENT (mA)

10

BAV99

High Conductance Ultra Fast Diode

(continued)

Typical Characteristics

(continued)

FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 - 800 mA

V F F - FORWARD VOLTAGE (V) 1.5 1.4 1.2 1 0.8 0.6 10 Ta= 25C CAPACITANCE (pF) 20 30 50 100 200 300 IF - FORWARD CURRENT (mA) 500

CAPACITANCE vs REVERSE VOLTAGE VR - 0.0 to 15 V

1.3
Ta= 25C

1.2

1.1

4 6 8 10 REVERSE VOLTAGE (V)

12

14 15

REVERSE RECOVERY TIME vs REVERSE CURRENT TRR - IR 10 mA vs 60 mA

REVERSE RECOVERY (nS) 4 3.5 3 2.5 2 1.5 1 10 20 30 40 50 REVERSE CURRENT (mA) 60 PD - POWER DISSIPATION (mW) Ta= 25C 500 400 300 200 100 0

Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA)
IR -F OR WA R

CU R

RE NT

Y Io - A ST VERA AT GE R E ECTIF -m IE D C A URR E NT - mA

ST EA D

IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms

50 100 150 TA - AMBIENT TEMPERATURE ( o C)

POWER DERATING CURVE

500
P D - POWER DISSIPATION (mW) PD

400

DO-35 Pkg

300 SOT-23 Pkg

200

100

50 100 150 IO - AVERAGE TEMPERATURE ( oC)

200

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