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Abstract
Satellites are equipped with memories to store data from various sensors. Usually, non-volatile memories are preferred as they can ensure the safety of data in case of sudden outage or disturbance in power. The following report explores the possibility of using a SD Card as the main memory for a low earth satellite.

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Introduction
The presence of a reliable, high capacity, high density non-volatile storage device is extremely important for space applications. Power to non-volatile memories can be shut down as and when required and are very attractive when power is a scarce resource. Generally flash memory is the most preferred choice for space applications when high capacity is required. As per current trends, NOR dominates as a code-storage media and NAND for data storage. NOR is cost effective in low-capacity data storage, and delivers high read performance. NAND is an ideal solution for high-capacity data storage. Its architecture competes by offering extremely high cell densities that translate to high storage capacity, combined with fast write and erase rates. The cell size of NAND flash is almost half the size of a NOR cell. The difficulty using NAND revolves around the need for flash management and special requirements for the system Static Random Access Memory (SRAM) interface. The NAND technology has enough address pins to map its entire media, allowing for easy access to every byte contained in it. NAND memories are accessed serially via a complicated input/output (I/O) interface, which may vary from one device or vendor to another. Using a NOR-based flash is a straightforward process. It is connected like other memory devices, and, as noted above, code can be run directly from it. NAND, however, is complicated with its requirement for a relatively sophisticated I/O interface. Accessing rules for NAND interfaces may differ depending on the NAND vendor.

Reliability of Flash Memory


1. Bit flipping All current flash architectures suffer from bit flipping, when a bit either gets reversed or is reversed. NAND devices are more prone to bit flipping ae compared to NOR devices; therefore, an error detection code / error correction code (EDC/ECC) algorithm is recommended for NAND devices. This problem is not as critical when using NAND to store multimedia information as a few bits gone bad in a video or an image will not have a very significant impact.

2. Bad-Block Handling NAND devices are shipped with bad blocks randomly scattered within them. NAND devices require an initial scanning of the media for bad blocks, which are mapped as unusable. Failing to perform this process in a reliable way results in high failure rates of the finished devices.

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[Type here] 3. Endurance Endurance refers to the maximum possible allowed number of erase/write cycles for a memory device. Typically, the maximum allowed number of erase cycles for a NAND device is one million cycles, compared with 100,000 cycles for a NOR device. The typical NAND block size itself is approximately eight times smaller than that of a NOR device, which means each NAND memory block will be erased fewer times over a given period of time.

4. Retention Data retention refers to the memorys ability to retain data. A data retention failure is when there is at least 1 bit of data that cannot be read or is read incorrectly. Data retention is also a function of the number of erase/write cycles.

Even though NAND flash appears to be the best choice for high capacity storage in space, there are several concerns that need to be addressed. While reducing silicon feature sizes and storing more bits per cell reduces the cost of the NAND flash and allows for higher density, it increases the bit error rate (BER). Overcoming the increasing noisiness of this storage medium requires larger and larger error correcting codes (ECCs). Extra memory (called the "spare memory area" or "spare bytes region") is provided at the end of each page in NAND to store ECC. This area is similar to the main page and is susceptible to the same errors. All concerns such as bad blocks, wear leveling etc have to be handled by the drivers that we write if we use NAND Flash as the primary memory.

SD Cards All SD cards are based on NAND Flash memory. Every SD card has a small microcontroller on it. That microcontroller handles communicating with the device the card is plugged into, getting data from the flash, and putting data into the flash. It also handles flash-specific tasks like wear leveling and compaction. This microcontroller only runs while data is being sent to or read from the card. All CPUs and microcontrollers run off of a "clock" signal, and the SD card's clock is controlled by the device it is plugged into. When the clock isn't running, neither is the microcontroller.

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[Type here] The presence of this microcontroller helps in eliminating most of the issues associated with the use of NAND Flash such as bad blocks, wear leveling etc. This means that the driver that we implement is concerned only with the SD protocols and do not have to include error correcting codes. Also, it is much simpler to introduce a file allocation table (FAT) system into a SD card than a NAND Flash memory. SD cards are susceptible to radiation just as any other electronic component. In most of the cases, space grade components will be available. However, Space grade SD cards are most likely not available. The main reason SD cards have not been used for space applications is that it has been designed so that it can be easily inserted or removed from any system which is not a priority for space applications. SD cards will require much more radiation protection than the other space grade components.

Advantages of SD card over NAND Flash IC On board microcontroller takes care of all kinds of error correction. Easier implementation of FAT system.

Disadvantage of SD card over NAND Flash IC Special radiation resistant NAND flash ICs are available from companies such as Space Micro Inc. We were unable to find any radiation resistant SD cards.

Some Important previous use of SD cards 1. In 2009, a simulation was conducted on the effects of radiation on a nano satellite. The SD card was included in this simulation and it was concluded that the sd card is susceptible to radiation induced effects. 2. The Montanna State University used a 2GB SD card as the primary memory for its high altitude balloon which reached a height of 97237 feet.

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Conclusion
NAND Flash is commonly used as a high capacity non-volatile memory for space applications. But NAND Flash requires error correction to be included in the code for optimum function. The deciding factor could be the fact that radiation resistant NAND flash memory chips are available on the market which is not true in case of SD cards. SD cards are based on the NAND flash memory technology. So, it has all the same disadvantages as that of a NAND Flash memory. It provides advantages due to the built in processor which manages all error correction.

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