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BANNARI AMMAN INSTITUTE OF TECHNOLOGY

SATHYAMANGALAM

Department of ________EEE________________ Class Subject Code Subject Prepared By IV YEAR/7thSEM EEE 07E703 VLSI DESIGN Mr.N.SARAVANAKUMAR/Mrs.P.SRITHA

Time: 75 MINUTES Lesson. No [4]/[7 ] in Unit-1 1. Content List: Basic electrical properties of MOS and CMOS circuits 2. 3. 4. 5. Skills Addressed: Reading,Questioning,Drawing Mindmap,Summarizing,Drawing Diagrams, Expressing orally and in writing Objectives: To make a knowledge to students about the basic structure of MOSFET and CMOS , types, modes of operation and their characteristics Lesson Links: Concepts/ideas /formula/definition/laws about the Structure, types of MOSFET Alpha Breathing : (2 Mins) The three steps for alpha breathing are Breathe in Breathe out Hold (Repeat the three steps for 8 times) Evocation : (5 mins )

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7. 8.

Introduction:( 20-25 mins) Attached as power point presentation in Annexure I Brain Activation: (2 mins) Any one of the following activities like Right brain activities Solving puzzles Brain GYM Optical Illusions Perpetual calendar recalling Survey and Reading by students: (15-18 mins)
Eshranghian E, Pucknell D A and Eshraghian S, Essentials of VLSI circuits and systems, PHI,

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New Delhi, 2003 - Page no:25-28

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Discussion: ( 9 mins) The students will be asked to discuss the relevant topic among their team/other team/Faculty. The students those who have not taken part will be noted and kindle them to do . Mind Map: (5-7 mins) Refer Annexure-II Summary: (5 mins) Refer Annexure-III Gazing/Rote memory: (2 mins) A long and fixed look at the Mind map by the students before doing the presentation Assessment: Refer Annexure-IV Learning outcomes: The students can get a deep knowledge about the types and

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basic electrical characteristics of MOS transistor

Annexure II Mind Map

Annexure III-Summary
ENHACEMENT AND DEPLETION 1. Depletion Type - the transistor requires the Gate-Source voltage, ( VGS ) to switch the device "OFF". The depletion mode MOSFET is equivalent to a "Normally Closed" switch. 2. Enhancement Type - the transistor requires a Gate-Source voltage, ( VGS ) to switch the device "ON". The enhancement mode MOSFET is equivalent to a "Normally Open" switch.

Modes of operation Cut off region Ids=0 Non saturated region Ids depends on Vds and Vgs Saturated region Ids flows independently

Annexure IV Assessment Students are asked to answer for following questions Differentiate the enhancement and depletion type MOSFET 1 Which terminal represents the control input of a FET? a The source. b The drain. c The gate. d The base. 2. What symbol is used to represent the supply voltage of the supply line that is connected (directly or indirectly) to the drain of a FET? a VDD b VGS c VSS d VDS

3. In the FET output characteristics shown below, what region is represented by the symbol 'X'?

a b c d

The saturation region. The ohmic region. The operating region. The space-charge region.

4. Which of the following statements is incorrect? a In circuits using n-channel FETs the supply voltage is normally more positive than the b c d
source. The operation of FETs is essentially non-linear. All FETs have very high input resistance. The transconductance of a FET is given by gm = ID/VGS.

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