LAB REPORT

Aim: Simulation of n-MOSFET for plotting the input, output characteristics and finding the
important parameters of the device.

Theory:

In linear region, MOSFET can be used as a closed switch with a finite resistance
ON
R
. The drain
current is given by,
( )
2
1
2 d n ox gs T ds ds
w
I c V V V V
l

(
=

. . (1)
When operating in saturation region. MOSFET can be used as an amplifier in this region and its
drain current is given by,
( )
2
1
2
d n ox gs T
w
I c V V
l
=
. . (2)

ASSUMPTIONS:

- Base and Source are always short so the body bias effect is neglected.
- The n-MOSFET used is AP9465GEM.
Observations:


Fig 1.1 Fig 1.2

Fig 1.3 Fig 1.4
For all drain voltages,
ds
V
the drain current,
d
I
is equal to 0A, which implies that the MOSFET is
operating in cut-off region. Then at
V V
gs
2 =
the current starts increasing suddenly, which implies
that
T
V is around 2V.
Drain Characteristics are plotted for the different values of
gs
V
, from Fig 1.2 and 1.3 it can be seen
that when,
1.
T gs
V V <
, MOSFET operates in Cut-Off region.
2.
gs ds T
V V V < <
, MOSFET operates in linear region.
3.
ds gs
V V <
, MOSFET operates in Saturation.


MOSFET Parameters:

Fig 1.5 Fig 1.6






Sub- threshold current :


Threshold Voltage
T
V
:
Threshold voltage can be found by applying a small constant voltage at drain and plotting
d
I
-
gs
V

graph, as we can see from Fig 1.5
V V
T
8 . 1 =
ON Resistance:
ON resistance is the resistance offered by the MOSFET in the linear region. It is reciprocal of the
slope of the drain characteristics. So it can be found out from fig 1.6, MOSFET is in linear region till
ds
V
= 3.2V, and the characteristics are linear at smaller values of
ds
V
so we shall take the slope at
0.5V .
Ron = 1/slope , slope = 35.9337


Trans-conductance:
Linear Region
m
g
: It can be found out by measuring the slope of the input characteristics when
MOSFET is in linear region .In fig 1.7,
ds
V
is kept constant at 5V ,as we have found out that
T
V
=
1.8V.So the device will be in linear region from 1.8V to 3.2V.
m
g
= 19.57 mho
Saturation Region
m
g
: It can be found out by measuring the slope of the input characteristics when
MOSFET is in saturation region .In fig 1.7 ,
ds
V
is kept constant at 5V ,as we have found out that
T
V

= 1.8V.So the device will be in saturation after 3.2V.
m
g
= 8 mho
Output Resistance:
It is the resistance offered by the MOSFET in the saturation region. So we can take the invers slope
of the drain characteristics, from fig 1.6 slope = 1.069.

Lambda: Value of lambda can be found by fig 1.6 .

DIBL : No significant dibl observed for this MOSFET.


Inferences:
- The MOSFET is an Enhancement type as
T
V is positive.
- If
T gs
V V <
, MOSFET can still conduct (
0 =
d
I
) provided
ds
V
is sufficiently negative.
- If
0 <
ds
V
, drain and base will be forward biased and a non- zero drain current will exist, i.e.
0 =
d
I
.
- As per the device specifications 04 . 0 = , but the calculated value comes out to be 022 . 0 =
.Reason for this may be the approximations made to derive the equation.