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WSD Wireless Semiconductor Division

Connecting You to the Digital World


Jimmy Ang Product Marketing Manager RF Multi-Market Components Wireless Semiconductor Division
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Avago Confidential

WSD Wireless Semiconductor Division

Avago WSD Worldwide


Headquarters
San Jose
Bay Area, California Headquarters R&D Marketing Seoul R&D Marketing

Research and Development


San Jose, Seoul, Penang, Munich

Munich R&D

Wafer Fabrication
Avago Ft. Collins, CO; 6 wafer fab GaAs PHEMT, E-pHEMT FBAR Silicon Bipolar and Diodes Foundry (Win Semi and Triquint ) GaAs HBT PA

Ft. Collins, Colorado Wafer Fab

Penang, Malaysia R&D Marketing Manufacturing

Assembly and Test


Assembly: Foxconn in China, ASE Korea, Inari in Malaysia, others Test: Foxconn, Inari, ASE, others
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WSD Wireless Semiconductor Division

Helping Customers With Differentiated Technologies


FBAR
Filter Miniature CELL / PCS GPS / WiFi / WiMAX UMTS / LTE GSM GPS FEM integration

Power Amplifier High Efficiency

Cellular / WiMAX Infrastructure


WLAN / Mobile WiMAX

GaAs PHEMT
Depletion-mode Enhancement-mode

LNA / Driver Amp Low Noise / High linearity mmWave MMIC Low cost

Cellular / WiMAX Infrastructure


GPS / WLAN / Mobile WiMAX / Digital TV P2P / P2MP VSAT
integrated matching & bias

Duel Band Low Noise Amplifier for WLAN 802.11a/b/g notebook computers

mmWave Power Amplifier

GSM Quad-Band Power Amplifier

CDMA PCS-band power module with lid removed

Avago Confidential

WSD Wireless Semiconductor Division

Leading Low Cost & High Volume Silicon Fab


Silicon Bipolar fT 10GHz Transistors & Gain Blocks

Base Station Military Satellite, Cable, Terrestrial TV

Silicon Bipolar fT 25GHz Gain Blocks

Silicon
Diode, Transistor & RFIC

Silicon PIN Diodes Switch, Attenuator, Limiter

Base Station Satellite and Cable TV ETC, RF Tag Handset

Silicon Schottky Diodes Detector, Mixer, Clipping/Clamping

Avago Confidential

WSD Wireless Semiconductor Division

RF Solutions for

Wireless Infrastructure
Last updated: August 2010

Note: This presentation contains Pre-released product information: Avago Technologies reserves the right to alter specifications, features, functions, markings, manufacturing release dates and general availability of the product at any time.

Avago Confidential

WSD Wireless Semiconductor Division

WSD Technology for Wireless Infrastructure


Ultra Low NF LNA for Receiver Sensitivity Improvement Gain Block & Driver Amp with Great Linearity & High Efficiency Highly Integrated Multi-Chip & Fully Match Module Solution

Value Proposition

Ultra Low NF Great Linearity Enable Broader Coverage

High Linearity Low Current Industry Standard Package Broad Performance Selection

Application Simplicity Multi Function Integration Low External SMTs Count Board Space Reduction Design Cycle Optimization

Technology

E-pHEMT

Si RFIC InGaP HBT E-pHEMT

PCB-based modules Multi Chip Lead Frame

Avago Confidential

WSD Wireless Semiconductor Division

GaAs Infrastructure Product Portfolio


Building Blocks
1st stage Low Noise Amplifier ATF-3xx43/M4, ATF-5xx43/M4,MGA-63xP8, MGA-1x516 Best In Class Ultra Low NF 2nd stage LNA, Pre-Driver Amp & Gain Block ATF-5x1P8/89, MGA-30x16, MGA-3xx89 MGA-5xx43/89, MGA-8xx63 High Linearity, Low Current Consumption & Industrial Standard Package Driver Amp & PA ALM-31x22/32x20 High Linearity & Fully Match Integrated Solution ALM-1x22 Dual Stage Low Noise, High Linearity & High Gain Balanced LNA ALM-80x10 0.25W VGA MGA-1x516 2-Stage High Gain & Linearity LNA Mixers IAM-9x516 Buffer Amp MGA-565P8 High ISO With Adjustable Psat
MiniPak QFN (1.4 x 1.2 x 0.7 mm) (Various Dimension)

Broad Package Selection


SC70 (2 x 1.2 x 0.95 mm) SOT-89 (4.5 x 2.5 x 1.5 mm)

MCOB (Molded Chip-on-Board; Various Dimension)

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WSD Wireless Semiconductor Division

Ultra Low Noise LNA with E-pHEMT Technology


Offer Superior Receiver Sensitivity
- Ultra Low NF (<0.5dB) together with high linearity (>35dBm) - Enhanced receiver sensitivity performance for BTS application - Consistent performance in mass production - Achieved with Avago Proprietary 0.25um E-pHEMT Technology & Unique Design Capability

NF (dB) 0.5

50

Idd (mA)

Avago Confidential

WSD Wireless Semiconductor Division

Avago Technologies BTS LNA Product Portfolio


Design Slots 1st Stage LNA Part Numbers Key Value Proposition

ATF-3xx43/M4, ATF-5xx43/M4, MGA-6x563,MGA-63xP8

Ultra Low NF, Good S11, High Pin Max Rating, Great IP3 & Low Current Consumption High IP3, Good RLs, Low NF, High Gain & Low Current Consumption Semi Integrated Solution Enable Design Simplification & PCB Space Saving Application Specific Design:
BTS LNA Module (Balance & Dual Stage) TD-SCDMA High Power Switch LNA Module TMA Bypass LNA Module

2nd or 3rd Stage LNA

ATF-5x1P8/89, MGA-535xx, MGA-6x563,MGA-63xP8, MGA3xx89 MGA-1x516, MGA-13x16

Balance and Dual Stage LNA Multi-Chip Module Solution

ALM-1x22, ALM-12x24, ALM11x36

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WSD Wireless Semiconductor Division

Highly Integrated & Reliable Module Packaging Technology


Offer Highly Reliable & Integrated Module Solution
- Highly integrated multichip solution realized with Avago Technologies highly reliable Coreless Substrate technology & established module integration technique - Proven reliability performance & MSL1/MSL2a enable - Superior Thermal Resistance vs conventional laminated substrate - High volume manufacturing experience - Ready to offer dedicated application specific solution for customer upon request

Complex and space consuming discrete solution


10

Avago miniature multichip module solution


Avago Confidential

WSD Wireless Semiconductor Division

Wireless Infrastructure LNA Roadmap


Increasing Gain while maintaining NF; Application specific Module Solution for design simplification

2000
ATF-3xx43, 5xx43/M4 SC70 Low NF LNA

2003
ATF-5x1P8 QFN 2x2mm2, High IP3 LNA

2007
ATF-5x189 SOT89, High IP3 LNA 2nd Generation
QFN 2x2mm2

2010
3rd Generation
QFN 2x2mm2

2012

Discrete FET

Active Bias LNA

1st Generation SC70 0.9dB NF

0.37dB NF @900MHz 3rd Generation


QFN 2x2mm2

4th Generation
QFN 2x2mm2 0.4dB NF; >20dB Gain @1900MHz

0.53dB NF @900MHz

>22dBm IIP3; Shutdown Pin 2nd Gen Dual 1st Gen Dual Stage LNA Stage LNA <0.7dB NF; 38dBm OIP3 1st Stage Balance LNA
QFN 4x4mm2 <0.5dB NF QFN 4x4mm2

Multi-Chip Module

Dual Stage Balance LNA


5x6x1.1mm3 MCOB

<0.6dB NF; 40dBm OIP3 Application Specific LNA Module


MCOB

QFN 4x4mm2

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Avago Confidential

WSD Wireless Semiconductor Division

Avago Technologies Gain Block Product Portfolio


Full Coverage With A Variety Of Selection
*ABA-54563

22dB
*ABA-53563 SBB-5089 Equivalent SXA-389 Equivalent * MGA-31189 MGA-31289 AH125 Equivalent * MGA-31589 MGA-31689 *AVT-51663 *AVT-53663 * MGA-31389 MGA-31489 *AVT-55689

20dB

Gain (dB)
12

*AVT-54689

18dB

*ADA-4743/89 *ADA-4643

16dB

*MGA-53589

AH1 Equivalent *MGA-30489 *MGA-30x16

*AVT-50663 *AVT-52663 *MGA-30889

*MGA-30689

25dBm

30dBm

35dBm

40dBm

45dBm

Linearity, OIP3 (dBm)


Avago Confidential

WSD Wireless Semiconductor Division

Wireless Infrastructure Gain Block Roadmap


Increasing Gain while maintaining NF; Application specific Module Solution for design simplification

<2005
ABA-3x563, 5x563 SC70 (6 Leads) 25GHz Ft HP25, 20dB Gain

2009

2010

2011

Si GB

ADA-4x43 SC70 (4 Leads)


25GHz Ft HP25, Darlington GB

E-pHEMT GB InGaP HBT GB

AVT-5x663 SC70 (6 Leads) Broad Band, <30dBm OIP3 0.5W PA MGA-3xx89 0.1W & 0.25W PA Broad Band, High Linearit, High Gain & Good Gain Flatness
SOT-89

AVT-5x663 SOT-89 Broad Band, <35dBm OIP3 MGA-31589/31689 0.5W PA 20dB Gain, >44.5dBm OIP3, 0.1dB Flatness, <170mA.
SOT-89

>27dBm P1dB, >44dBm OIP3

QFN 4x4mm2

QFN or SOT-89

High LFOM GB Family

>17dB LFOM

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Avago Confidential

WSD Wireless Semiconductor Division

Avago Technologies BTS PA Product Portfolio


1-4W High Linearity PA
P1dB >30dBm OIP3 >47dBm ALM-31222 Single Stage Gain
ALM-31122 ALM-31322

P1dB >33dBm OIP3 >50dBm Single Stage Gain


ALM-32320 ALM-32220

-45

ALM-32120

ACLR1 / dBc

-49

Enterprise FemtoCell PicoCell CPE P1dB ~ 36dBm Gain : 35dB


MGA-43128

MGA-43228/43328

-53

Linear Pout / dBm 20


(698-787)MHz LTE (869-960)MHz UMTS (1800-2000)MHz UMTS

27
(2000-2200)MHz (2300-2500)MHz (2500-2700)MHz UMTS/TD-SCDMA UMTS/TD LTE Wimax/LTE (3500-3800)MHz Wimax/LTE

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Avago Confidential

WSD Wireless Semiconductor Division

Wireless Infrastructure High Power PA Roadmap


High Power & High Efficiency Fully Match PA Module For Major Cellular Freq Bands

2008
Driver Amp
ALM-31x22 5x6x1.1mm3 MCOB High Linearity 1W PA ALM-32x20 7x10x1.1mm3 MCOB High Linearity 2W PA

2010

2012
4W Class A PA TBD High Linearity 4W PA

High Gain High Power PA Module

MGA-43x28 5x5mm2 QFN 29dBm LTE & WiMAX PA

27dBm Linear PA (Band 1,2,5,8)


5x5mm2 MCOB

18% Efficiency, 48dBc ACLR 8-10W Driver Amp (Major Cellular Band)
TBD

High Gain, High Efficiency, >53dBc ACLR

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Avago Confidential

WSD Wireless Semiconductor Division

Released Products

16

WSD Wireless Semiconductor Division

Low Noise Amplifier


8 7 6 5 1 2 3 4 Ground

MGA-631P8 & MGA-632P8


Active Bias LNA
Value Propositions Very Low NF 25dB typ. Input Return Loss, C1, L1 optimise match and NF Ideal for single ended designs Adjustable voltage supply 3V to 5V Adjustable current with Rbias 20-80mA 20dBm input power handling Gain control via feedback R1 and C3 values, 2-4dB gain adjustment Cascode amplifier design, same die mounted vertically or horizontally on ground pad Target Applications: Low Noise Amplifier for cellular base stations (GSM, CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE, WiMAX, etc)
Product Freq range (GHz) MGA-631P8 MGA-632P8 0.4 - 1.5 1.4 3.8 Test range (GHz) 0.9 1.95 Current (mA) 54@ 4V 57@ 4V NF (dB) 0.53 0.62 Gain (dB) 17.5 17.6

Bottom View LPCC 2.0 x 2.0 x 0.75 mm

Pin1

OIP3 (dBm) 32.6 33.9

P1dB

S11 (dB) 19.4 22.7

S22 (dB) 22.5 13.9

(dBm)
18.0 19.2

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Avago Confidential

WSD Wireless Semiconductor Division

Low Noise Amplifier

MGA-633P8, MGA-634P8 & MGA-635P8


Active Bias Ultra Low Noise Amplifier
Value Propositions Ultra low noise figure High Linearity Broadband 0.4 4.0GHz Built-in active bias circuit Smart bias: Adjustable current and Linearity MGA-633P8 41dBm IP3 @ 70mA MGA-634P8 39dBm IP3 @ 56mA MGA-635P8 36dBm IP3 @56mA 20dBm Input power handling 15dB typ. Input Return Loss, C1, L1 optimise match and NF Target Applications: Low Noise Amplifier for cellular base stations (GSM, CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE and WiMAX, etc.)
Product Freq range (GHz) MGA-633P8 MGA-634P8 MGA-635P8
18
8 Ground 1 2 3 4 Bottom View

7
6 5

MoSLP 2.0 x 2.0 x 0.75 mm

Simplified Schematic

Test range (GHz) 0.9

Current (mA) 54 @ 5V 48 @ 5V 56 @ 5V

NF (dB) 0.37 0.44 0.56

Gain (dB) 18.0 17.4 18.0

OIP3 (dBm) 37.0 36.0 35.9

P1dB (dBm) 22 21 22

S11 (dB) 15.0 15.5 12.5

S22 (dB) 21.0 13.0 12.0

0.4-1.5 1.5-2.3 2.3-4.0

1.9
2.5

Avago Confidential

WSD Wireless Semiconductor Division

Low Noise Amplifier

MGA-13516 & MGA-14516


2 stage High Gain & High Linearity LNA
Value Propositions First and Second stage LNA in 4x4mm package <0.7dB NF Ideal for single ended designs First stage adjustable voltage supply 3V to 5V First and second stage adjustable current 20dBm input power handling First and Second stage Gain control via feedback Available connection for attenuator, filter or simple match between stages for flexibility Target Applications: Low Noise Amplifier for cellular base stations (GSM, CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE, WiMAX, etc)
Part No. Freq range (MHz) Test Freq (MHz) 900 1950 Vd (V) Id (mA) 5 5 155 155 NF (dB) 0.66 0.68
Vbias Vd

Active bias

Active bias

RFout
RFin
match

4x4x0.85mm 16 lead QFN

Gain (dB) 31.8 31.7

OIP3 IRL (dBm) (dB) 38 38 13 13

ORL (dB) 15 15

OP1dB S12 (dBm) (dB) 23.5 23.5 50 50

Pkg QFN 4x4mm QFN 4x4mm

MGA-13516 400-1500 MGA-14516 1400-2700

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Avago Confidential

WSD Wireless Semiconductor Division

Low Noise Amplifier

MGA-16516 and MGA-17516


Dual Matched Low Noise FET
Key Value Propositions Low NF High Linearity Dual, matched pair LNA Excellent isolation For use as balanced amplifier design External active bias circuit required Target Applications: Low Noise Amplifier for cellular base stations (GSM, CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE, WiMAX, etc)

QFN 4.0 x 4.0 x 0.85 mm

Freq. Range Test Freq. Part Number MGA-16516 MAG-17516 (GHz) 0.5-1.7 1.7-2.7 (GHz) 0.8 1.85

Vdd (V) 5 5

Idq (mA) 50 50

NF (dB) 0.45 0.52

Gain (dB) 17.5 17.2

OP1dB (dBm) 18 21.5

IIP3 (dBm) 12.4 16.2 Package QFN 4x4x0.85mm QFN 4x4x0.85mm

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WSD Wireless Semiconductor Division

Low Noise Amplifier

ATF-531P8, ATF-55143/M4, ATF-54143/M4 First Stage Low Noise Amplifiers & and ATF-58143 High Linearity Low Noise Enhancement Mode pHEMT FET
Part Number ATF-531P8 ATF-54143 ATF-541M4 ATF-58143 ATF-55143 ATF-551M4 Gate Width (um) 1600 800 800 800 400 400 Application Note Freq. (MHz) 900 2000 2000 900 2000 2000 V ds (V) 4 3 3 3 2.7 2.7 I ds (mA) 40 60 60 30 10 10 NF (dB) 0.6 0.5 0.5 0.55 0.6 0.5 Ga (dB) 18.6 16.6 17.5 20.6 17.7 17.5 OIP3 (dBm) 31 36.2 35.8 33 24.2 24.1
C 1 Z0 L1 L2 LL1 LL2 C 5

P 1 dB (dBm) 15 20 21 15 14 15
Q 1, ATF -541M4

Package LPCC SOT-343 MiniPak SOT-343 SOT-343 MiniPak


C 4

Application Note AN-1371 AN-1281 AN-1350 AN-1375

Key Value Propositions 0.5 / 0.6dB Typical Noise Figure High Linearity Positive voltage only No bias timing Circuit required Application Notes and Evaluation boards to cover all popular frequencies 80% market share in cellular infrastructure Active bias circuit required for high volume applications SOT-343 and MiniPak package options
21

Z0

C 2

R 1

C 6 R 5

C 3 R 2 R 4

R 3

V dd= 5V

WSD Wireless Semiconductor Division

Low Noise Amplifier

ATF-33143/M4, ATF-35143, ATF-34143 First Stage Low Noise Amplifiers and Low Noise Depletion Mode pHEMT FET ATF-38143
Part Number ATF-33143 ATF-33143 ATF-331M4 ATF-34143 ATF-34143 ATF-38143 ATF-35143 Gate Width (um) 1600 1600 1600 800 800 800 400 Application Note Freq. (MHz) 900 1900 1900 900 1900 1900 1600/1900 V ds (V) 4 4 4 4 4 2 2 I ds (mA) 80 80 60 40 60 10 10 NF (dB) 0.5 0.7 0.8 0.4 0.5 0.7 0.9 Ga (dB) 17.4 13.8 13.3 18.5 16 15.5 15 OIP3 (dBm) 33 32.5 32 29 31 23 20 P 1 dB (dBm) 20 20 19 17.5 19 12 11 Package SOT-343 SOT-343 MiniPak SOT-343 SOT-343 SOT-343 SOT-343 Application Note AN-1195 AN-1198 AN-1288 AN-1190 AN-1175 AN-1197 AN-1174

Key Value Propositions 0.5 / 0.6dB Typical Noise Figure High Linearity Application Notes and Evaluation boards to cover all popular frequencies 80% market share in cellular infrastructure Active bias circuit required for high volume applications SOT-343 and MiniPak package options
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WSD Wireless Semiconductor Division

Low Noise Amplifier

Second and Third Stage ATF-5X1P8/89 Enhancement Mode FET Series


Part Number ATF-50189 ATF-501P8 ATF-501P8 ATF-501P8 ATF-511P8 ATF-511P8 ATF-521P8 ATF-521P8 ATF-52189 ATF-531P8 ATF-531P8 ATF-531P8 Gate Width (um) 6400 6400 6400 6400 6400 6400 3200 3200 3200 1600 1600 1600 Application Note Freq. (MHz) 1960 1960 900 450 1960 900 2140 900 2000 1960 1960 900 V ds (V) 4.5 4.3 4.3 4.3 4.5 4.5 4.5 4.5 4.7 4 4 4 I ds (mA) 320 280 280 280 200 200 200 200 225 135 135 135 NF (dB) 1.7 1.9 1.6 2.0 3.1 1.6 3.5 1.6 1.2 3.0 3.0 Ga (dB) 13.8 13.4 17.4 22.9 13.8 18.4 16.5 18.3 16.9 18.6 14.8 22.3 OIP3 (dBm) 44.5 45.2 44.5 41.5 41.3 41.2 41.2 40 40 35 40 38 P 1 dB (dBm) 27 28.5 27.4 25 26 25 24.8 24.4 27.5 24.3 22.3 20.7 Package SOT-89 LPCC LPCC LPCC LPCC LPCC LPCC LPCC SOT-89 LPCC LPCC LPCC Application Note AN-5049 AN-5021 AN-5025 AN-5058 AN-1327 AN-1373 Datasheet AN-1374 AN-5245 AN-1320 AN-1320 AN-1372

Key Value Propositions High Linearity Positive voltage only No bias timing Circuit required Application Notes, White Papers and Evaluation boards to cover all popular frequencies Active bias circuit required for high volume applications SOT-89 and LPCC 2x2mm package options
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OGX

Page 23

WSD Wireless Semiconductor Division

High Linearity LNA / Driver Amp


SOT-343 163 Deg C / Watt SOT-89 52 Deg C / Watt

MGA-53543 & MGA-53589


High Linearity LNA/Driver Amp
Key Value Propositions 1.5dB Noise Figure as Q2 LNA High linearity up to 39 dBm OIP3 at 5V, 54mA bias SOT-343 High linearity up to 37 dBm OIP3 at 5V, 52mA bias SOT-89 High power efficiency 28% at P1dB High reliability for base station application Suitable for 0.1 3.0GHz application Simple input match to optimize IP3 SOT-343 and SOT-89 Industrial Standard Pb-free & MSL1 packages

Simplified Circuit Schematic

Description MGA-53543

MGA-53589

Freq (MHz) NF (dB) Gain (dB) 900 1.3 17.4 1900 1.5 15.4 2400 1.9 15.1 900 1.24 18.2 1900 1.66 15.5 2400 1.64 15.3

OIP3 (dBm) 39.7 39.1 38.7 36.8 37.0 37.2

P1dB (dBm) 19.3 18.6 18.1 18.6 18.2 17.6

I/O RL Voltage (V) >10.0 5.00 >10.0 5.00 >10.0 5.00 >10.0 5.00 >10.0 5.00 >10.0 5.00

Current (mA) 54 54 54 52 52 52

Operating Range (MHz) 50-3000 50-3000 50-3000 50-3000 50-3000 50-3000

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WSD Wireless Semiconductor Division

General Purpose Amplifier


SOT-363 2 x 1.2 x 0.95 mm

MGA-6x563

Features Single +3V and +5V supply Bias 5mA to 80mA with Rbias value High linearity Low noise figure SOT-363 Miniature package Input match optimizes NF performance Input can be matched for broadband performance, white papers available for 100-1000MHz, 400-2700MHz Shutdown via Rbias control

High Linearity Low Noise Smart-Bias DriverAmp

Vd Ibias Rbias Vbias


4

Id = Ids + Ibias Ids

feedback
6 3

input match

bias
1, 2, 5

Figure 1 SmartFET Schematic Diagram

Description MGA-62563

MGA-61563

Freq (MHz) NF (dB) Gain (dB) 500 0.8 22.0 1000 0.9 20.0 2000 1.2 15.5 500 1.1 20.0 1000 0.9 19.3 2000 1.0 15.5

OIP3 (dBm) 35.0 33.5 33.0 30.0 30.0 32.0

P1dB (dBm) 18.0 17.6 17.7 15.5 15.5 15.1

I/O RL Voltage (V) >10.0 3.00 >10.0 3.00 >10.0 3.00 >10.0 3.00 >10.0 3.00 >10.0 3.00

Current (mA) 60 60 60 41 41 41

Operating Range (MHz) 50-3000 50-3000 50-3000 50-3000 50-3000 50-3000

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Avago Confidential

WSD Wireless Semiconductor Division

General Purpose Amplifiers

MGA-81563 and MGA-82563 General Purpose Amplifiers


Key Value Propositions Easy to use with minimal external matching Input pre-matched, Output 50 Ohm matched Single +ve supply voltage Integrated active bias circuitry Unconditionally stable MGA-81563 can be biased 2V to 5V MGA-82563 can be biased at 2V, 4V absolute maximum MGA-81563 achieves similar P-1dB performance to MGA82563 when biased at 5V, 54mA

MGA-81563 / 82563 Simplified Circuit Schematic

SOT-363 2 x 1.2 x 0.95 mm

Description MGA-81563

MGA-82563

Freq (MHz) NF (dB) Gain (dB) 500 3.1 12.5 1000 3.0 12.5 2000 2.7 12.3 500 2.3 14.7 1000 2.2 14.5 2000 2.2 14.5

OIP3 (dBm)

27 3 30

P1dB (dBm) 15.1 15.1 14.8 17.4 17.5 17.3

I/O RL Voltage (V) >10.0 3.00 >10.0 3.00 >10.0 3.00 >10.0 3.00 >10.0 3.00 >10.0 3.00

Current (mA) 42 42 42 84 84 84

Operating Range (MHz) 50-6000 50-6000 50-6000 50-3000 50-3000 50-3000

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WSD Wireless Semiconductor Division

General Purpose Amplifier


SOT-363 2 x 1.2 x 0.95 mm

MGA-8x563
General Purpose Amplifiers
Key Value Propositions Easy to use with minimal external matching Input pre-matched, Output 50 Ohm matched Single +ve supply voltage Integrated active bias circuitry Unconditionally stabel

MGA-85563 Simplified Circuit Schematic

Freq. Range

Test Freq.

Vdd (V)

Idq (mA)

NF (dB)

Gain (dB)

P1dB (dBm)

OIP3 (dBm)

Part Number

(GHz) 0.8 6.0 0.1 6.0 0.1 6.0

(GHz) 2 2 2

MGA-85563 MGA-86563 MGA-87563

3 5 3

15 14 4.5

1.85 1.8 1.8

19.0 20.0 14.0

+0.9 +4.1 -2.0

+11.5 +15.0 +8.0


MGA-86563 / 87563 Simplified Circuit Schematic

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WSD Wireless Semiconductor Division

High Linearity Gain Block


SOT-89

MGA-30489
0.25W Driver Amplifier (250MHz to 3GHz)

Value Propositions 250MHz to 3GHz operating freq Industrys standard SOT-89 package Very high linearity, Low current Pre-matched with simple matching Stable performance across temperature
Simplified Schematic

Freq (GHz) 0.9 1.9 2.5

Vd (V) 5 5 5

Idq (mA) 100 100 100

P1dB (dBm) 23.5 23.3 23.0

OIP3 (dBm) 40.5 39.7 39.7

Gain@ (dB) 16.5 13.0 12.0

S11 (dB) -11.0 -14.5 -18.0

S22 (dB) -12.0 -14.5 -12.0

NF (dB) 3.0 3.2 3.5

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WSD Wireless Semiconductor Division

High Linearity Gain Block


SOT-89

MGA-30689, MGA-30789, MGA-30889 & MGA-30989


Broadband High Linearity Gain Blocks
Value Propositions Industrys standard SOT-89 pkg Very high and flat linearity across frequency Flat gain across the frequency Built in adjustable bias circuit 50Ohm matched input and output Stable performance across temperature
Simplified Schematic

Part number

FreqRange Test Freq (GHz) (GHz) 0.04 - 2.5 2.0 - 6.0 0.04 - 2.5 2.0 - 6.0 2.0 3.5 2.0 3.5

Vd (V) 5 5 5 5

Idq (mA) 100 100 65 56

P1dB (dBm) 22 24 19 22

OIP3 (dBm) 40 40 36 36

Gain (dB) 14.0 12.0 15.0 12.4

Gain Variation (dB) 0.5 NA 0.5 NA

S11 (dB) -10 -10 -10 -20

S22 (dB) -10 -10 -10 -15

NF (dB) 3.0 3.5 3.0 2.0

Package (mm)

MGA-30689 MGA-30789 MGA-30889 MGA-30989

SOT-89 SOT-89 SOT-89 SOT-89

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WSD Wireless Semiconductor Division

High Linearity Gain Block


SOT-89

MGA-31189 & MGA-31289


High Gain 0.25W Driver Amplifier
Value Propositions 250MHz to 2.7GHz operating freq
Industrys standard SOT-89 package Very high linearity High gain 0.1dB Flatness over 100MHz Pre-matched with simple matching Stable performance across temperature
Target Applications: Q2/3 LNA or Pre-driver Amplifier for cellular base stations (GSM, CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE and WiMAX, etc)
Part number MGA-31189 MGA-31289 Freq Range Test Freq (GHz) (GHz) 0.25 1.5 1.5 3.0 0.9 1.9 2.5 Vd (V) 5 5 5 Idq P1dB (mA) (dBm) 111 124 124 24.0 23.6 23.7 OIP3 Gain (dBm) (dB) 42.0 41.8 41.5 21.0 18.7 17.7 S11 S22 NF (dB) (dB) (dB) 15.6 12.8 2.0 16.2 10.3 2.0 15.5 10.8 2.0
Simplified Schematic

Package SOT-89 SOT-89 SOT-89

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High Linearity Gain Block


SOT-89

MGA-31389 & MGA-31489


High Gain 0.1W Driver Amplifier
Value Propositions 250MHz to 2.7GHz operating freq
Industrys standard SOT-89 package High and consistent gain across major freq band 0.1dB Flatness over 100MHz High linearity Pre-matched with simple matching Stable performance across temperature
Target Applications: Pre-driver Amplifier for cellular base stations (GSM, CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE and WiMAX, etc)
Part number MGA-31389 MGA-31489 Freq Range Test Freq (GHz) (GHz) 0.25 1.5 1.5 3.0 0.9 1.9 2.5 Vd (V) 5 5 5 Idq P1dB (mA) (dBm) 73 71 71 22.2 19.3 19.5 OIP3 (dBm) 38.6 37.2 37.0 Gain (dB) 21.3 19.3 19.5 S11 (dB) 30.5 25.0 15.0 S22 (dB) 14.7 10.0 14.0
Simplified Schematic

NF Package (dB) 2.0 2.1 2.1 SOT-89 SOT-89 SOT-89

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High Linearity Gain Block

MGA-31589 & MGA-31689


High Gain 0.5W Driver Amplifier
Value Propositions 450MHz to 3.0GHz operating freq (**narrow band
matching required) Industrys standard SOT-89 package Very high linearity High gain 0.1dB Flatness over 100MHz Stable performance across temperature
Target Applications: Q2/3 LNA or Pre-driver Amplifier for cellular base stations (GSM, CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE and WiMAX, etc)
1900MHz Matching Circuitry

Part number MGA-31589 MGA-31689

Freq Range Test Freq (GHz) (GHz) 0.45 1.5 1.5 3.0 0.7 1.9

Vd (V) Idq (mA) P1dB (dBm) 5 5 146 168 27.2 27.6

OIP3 (dBm) 45.3 44.9

Gain (dB) 20.4 18.1

S11 (dB) 12.1 11.5

S22 (dB) 10.0 10.0

NF (dB) 1.9 1.9

Package SOT-89 SOT-89

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General Purpose Amplifier

InGaP HBT Gain Block Amplifier-SC 70 Package


Key value propositions High linearity (24-29dBm) and great power handling (1316dBm) Flat, broadband frequency response up to 2GHz High & Low gain option Internal 50 ohm match High ESD Protection (HBM>1KV) Low current consumption Industrial Standard MSL 1 package Target Applications: IF Amplifier for Basestation radiocards Gain Block for various wireless system
OIP3 (dBm) 29.8 29.3 27.0 30.4 29.5 27.4 26.3 27.0 25.3 27.0 26.5 25.3 P1dB (dBm) 16.0 16.2 14.6 15.8 15.7 15.1 13.5 14.0 12.3 13.3 13.1 12.8 Voltage (V) 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 Current (mA) 48 48 48 45 45 45 39 39 39 36 36 36 Operating Range (MHz) DC-6000 DC-6000 DC-6000 DC-6000 DC-6000 DC-6000 DC-6000 DC-6000 DC-6000 DC-6000 DC-6000 DC-6000

SOT-363 2 x 1.2 x 0.95 mm

Description AVT-53663

AVT-52663

AVT-51663

AVT-50663

Freq (MHz) NF (dB) Gain (dB) 100 3.50 22.4 1000 3.50 21.5 2000 3.50 20.0 100 3.70 16.2 1000 3.80 16.0 2000 4.30 15.6 100 3.50 21.3 1000 3.50 20.8 2000 3.50 19.5 100 3.40 16.0 1000 3.50 15.7 2000 3.80 15.5

I/O RL >15.0 >15.0 >15.0 >15.0 >15.0 >15.0 >15.0 >15.0 >15.0 >15.0 >15.0 >15.0

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General Purpose Amplifier

AVT-55689 & AVT-54689


InGaP HBT Gain Block Amplifier In SOT-89
Key value propositions High linearity (30-35dBm) and great power handling (1719dBm) Flat, broadband frequency response up to 2GHz Internal 50 ohm match High ESD Protection (HBM>1KV) Built in active bias eliminating external biasing resistor Low current consumption SOT-89 MSL 1 package Target Applications: IF Amplifier for Basestation radiocards Gain Block for various wireless system

SOT-89 4.5x2.5x1.5mm

Demoboard/Samples Availability: Now!!!


Current (mA) 83 83 83 64 64 64 Operating Range (MHz) 50-6000 50-6000 50-6000 50-6000 50-6000 50-6000

Description AVT-55689

Freq (MHz) 100 1000 2000 100 1000 2000

NF (dB) 4.10 4.10 4.50 3.95 4.00 4.30

P1dB Gain (dB) OIP3 (dBm) (dBm) 18.9 18.4 17.0 19.3 18.7 17.40 36.0 34.5 33.0 34.0 32.6 30.0 19.6 19.6 19.0 19.0 19.0 17.0

I/O RL >10.0 >10.0 >10.0 >10.0 >10.0 >10.0

Voltage (V) 5.00 5.00 5.00 5.00 5.00 5.00

AVT-54689

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General Purpose Amplifier


SOT-363 2 x 1.2 x 0.95 mm

ABA-3x563 & 5x563


Broadband Silicon RFIC Amplifiers
Key Value Propositions DC-2.5GHz flat frequency response High Linearity below 500MHz 20-22dB high fixed gain Higher reverse isolation <40dB 50 ohm matched input and output Unconditionally stable Voltage Biased, 3V and 5V options Target Applications: IF Amplifier for Basestation radiocards IF Amplifier for DVB-S LNB
Description ABA-51563 ABA-52563 ABA-53563 ABA-54563 ABA-31563 ABA-32563

Freq (MHz) 100 1000 2000 100 1000 2000 NF (dB) 3.2 3.4 3.6 2.5 2.8 3.3 Gain (dB) 20.5 21 21.5 21.8 21.8 21.5 OIP3 (dBm) 14 14 12 30 26 20 P1dB (dBm) 4 4 2 13 12 10 I/O RL >15.0 Voltage (V) 5 5 Current (mA) 18 35 Operating DC-2500 DC-2500 Range (MHz)
35

100 2.8 22 28 15

1000 3.1 22 27 14
5 46

2000 3.3 22 23 13

100 3.5 23 36 18

1000 4.2 23.5 34 18


5 79

2000 100 4.2 3.5 23 21.5 28 17 17 4 >15.0

1000 3.8 21.5 15 3


3 14

2000 4.0 21 13 2

100 2.6 21.5 27 12

1000 3.1 21.5 23 10


3 37

2000 3.3 19 19 8

DC-2500

DC-2500

DC-2500

DC-2500

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WSD Wireless Semiconductor Division

General Purpose Amplifier

ADA-4x43
Silicon Bipolar Darlington Amplifiers
Key value propositions High linearity (15-33dBm) @ 0.9GHz High linearity (15-36dBm) @ 0.1GHz Flat, broadband frequency response up to 1GHz Internal 50 ohm match Flexible current biased devices Target Applications: IF Amplifier for Basestation radiocards IF Amplifier for DVB-S LNB CATV drop line amplifier
Description Freq (MHz) NF (dB) Gain (dB) OIP3 (dBm) P1dB (dBm) 0/P RL (dB) Current (mA) Operating Range (MHz)
36

ADA-4543 100 3.6 15.7 14.6 2.5 1000 3.7 15.1 15.0 1.9 >15 15 2000 4.1 14.0 14.0 2.0

ADA-4643 100 3.9 17.5 29.0 14.7 1000 4.0 17.0 28.3 13.4 >15 35 2000 4.3 14.0 24.0 11.5

ADA-4743 100 4.1 16.6 33.4 17.7 1000 4.2 16.5 32.6 17.1 >15 60 2000 4.2 15.5 28.0 16.2

ADA-4789 100 4.1 16.9 33.4 17.7 1000 4.2 16.5 33.2 17.1 >15 60 2000 4.4 16.2 28.8 15.5 SOT-343 163 Deg C / Watt SOT-89 52 Deg C / Watt

DC-2500

DC-2500

DC-2500

DC-2500 ADA-4743 ADA-4789

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Buffer-High Power Amplifier

MGA-565P8
High Isolation Buffer Amplifier
Key Value Propositions Adjustable Psat between +9dBm to 20dBm via external Rbias Broadband 100MHz to 3GHz application as LO Buffer Amp High gain up to 22dB
LPCC 2x2mm Operating at 2GHz, Pin=0dBm
Rbias
60 Ohm 150 Ohm 130 Ohm 180 Ohm

Vd (V)
5 5 3 3

Mixer Level
17 13 10 7

LO Drive
+17 dBm +13 dBm +10 dBm +7 dBm

Ids
55 mA 40 mA 25 mA 21 mA

Isolation
>42 dB >42 dB >42 dB >42 dB

Psat VCO ~ 0dBm Mixer

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Driver Amplifier

Basestation 0.5W Driver Amplifiers


Value Propositions Very high linearity Built in adjustable bias circuit Adjustable current from 100 to 200mA (OIP3 will change) Pre-matched with easy matching Stable performance across temperature
Part number MGA-30116 MGA-30216 MGA-30316 FreqRange Test Freq (GHz) (GHz) 0.7- 1.0 1.7-2.7 3.3-3.9 0.9 2.0 3.5 Vd (V) Idq (mA) 5 5 5 203 206 198 P1dB (dBm) 27.7 29.0 28.5 PAE @ P1dB 47% 49% 51% OIP3 (dBm) 44.1 45.3 44.4 Gain@ (dB) 17 14 12.8 S11 (dB) -14 -19 -10 S22 NF (dB) (dB) -14 -22 -8.5 2.7 2.8 2.7 Package (mm) QFN 3x3mm QFN 3x3mm QFN 3x3mm

Demo board Schematic

QFN 3.0 x 3.0 x 0.85 mm

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Driver Amplifier

Basestation 1W Driver Amplifiers


Value Propositions Very high linearity Built in adjustable bias circuit Fully matched for easy to use Stable performance across temperature
Part number
ALM-31122 ALM-31222 ALM-31322

FreqRange Test Freq (GHz) (GHz)


0.7-1.0 1.7-2.7 3.3-3.9 0.9 2.0 3.5

Vd (V) Idq P1dB (mA) (dBm)


5 5 5 394 410 413 31.6 31.5 31

PAE @ OIP3 P1dB (dBm)


52% 52% 51% 47.6 47.9 47.7

Gain@ (dB)
15.6 14.9 13.2

S11 (dB) S22 (dB)


-14 -10 -10 -11 -10 -10

NF (dB)
2 2.7 2.8

Package (mm)
MCOB 5x6 mm MCOB 5x6 mm MCOB 5x6 mm

Demo board Schematic

MCOB 5x6x1.1mm

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Driver Amplifier

Basestation 2W Driver Amplifiers


Value Propositions Very high linearity Built in adjustable bias circuit Fully matched for easy to use Stable performance across temperature
Part number ALM-32120 FreqRange Test Freq Vd (V) Idq (GHz) (GHz) (mA) 0.7-1.0 0.9 5 800 P1dB (dBm) 34.4 PAE @ OIP3 P1dB (dBm) 50.3% 52 Gain (dB) 14.3 S11 (dB) S22 (dB) -26 -10 NF (dB) 2.5 Package (mm) MCOB7x10

ALM-32220
ALM-32320

1.7-2.7
3.3-3.9

2.0
3.5

5
5
Vcontrol

800
810
Vdd Vsense

34.4
34.5

47.5%
46.6%

50
51

14.8
12.6

-9
-9

-9
-12

3.5
2.5

MCOB7x10
MCOB7x10

Demo board

Demo board Schematic

Vsense2

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Vdd2

WSD Wireless Semiconductor Division

WiMAX Amplifier

WiMAX Linear Power Amplifier


Value Propositions Low operating voltage (3.3V or 5V) Low current, high efficiency Integrated switch control attenuator Integrated shutdown and power detector Fully matched RF Input and output
Part number Freq range (GHz) Test freq (GHz) Vdd (V) Idd (mA) Idq (mA) Pout (dBm) Pout (dBm) @ 5V EVM (%) PAE (%) Gain (dB) 2nd Harmonic (dBc) Atte. (dB) Package (mm) P1dB (dBm) Matching Target Release ALM-42216 2.3-2.7 2.5 3.3 420 240 23.5 26 2.5% 16% 32 45 18 5x5x1.1 30.5 Full Released ALM-42316 3.3-3.8 3.5 3.3 417 240 23 25 2.5% 16% 30 45 18 5x5x1.1 30.5 Full Released

MCOB 16-pin 5 x 5 x 1.1 mm

Functional block diagram

Note 1: Linear Output power measured at 64QAM OFDMA modulation per IEEE 802.16e specs

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WiMAX/LTE Amplifier
Demoboard/Samples Availability: Now!!!

2.3-2.7GHz 29dBm OFDMA Linear Power Amplifier


Value Propositions
5V operation High efficiency 29dBm Linear Pout Integrated switch control attenuator Integrated shutdown and power detector Partial output match enable optimum narrow band performance with different external matching
Part number
Freq range (GHz) Vdd (V) Idd (mA) @ Plin Idq (mA) Pout (dBm)*note 1 EVM (%) PAE (%) Gain (dB) Det Range (dB) Atte. (dB) Package (mm) P1dB (dBm) Matching

5.0x5.0mm QFN

MGA-43228
2.3-2.5 5 1023 515 29.1 2.50% 15.70% 38.5 20 23.8 5x5x0.85 36 Partial*

MGA-43328
2.5-2.7 5 1017 470 29.3 2.50% 16.60% 37.4 20 24.5 5x5x0.85 36 Partial* Note 1: Linear Output power measured at 64QAM OFDMA modulation per IEEE 802.16e specs * Input fully-matched and output partial matched

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Voltage Controlled Attenuator

HSMP-3816 & HSMP-3866


Quad Pin Diode Attenuator
Value Propositions 4 Pin Diodes in SOT 25 industrial standard package (2.9 x 1.6 x 1.0mm) Broad band application from 300KHz 3GHz Voltage Controlled Attenuator High Input IP3 High Attenuation Range Low Insertion Loss Target Applications Attenuator for Cellular Base Station, CATV, VSAT
Typical Parameters at 1GHz Insertion Loss Input IP3 Return Loss Attn Range, 0V<Vc<+5V Attn Range, +1V<Vc<+15V HSMP-3816 3.5 dB 45 dBm 22dB 36.5dB 38dB HSMP-3866 2.5 dB 30 dBm 18dB 36 dB NA
SOT-25 Package 2.9 x 1.6 x 1.0mm

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Voltage Controlled Attenuator

ALM-38140
Diode Based Pie Attenuator Module
Key Value Proposition
Broad band application from 50MHz 4GHz Current Controlled Attenuator, 1-5 Vctrl, 0-20mA High Input IP3 & P1dB High Attenuation Range Phase Shift minimised with external inductor Low Insertion Loss Built in matching and biasing network Reduced board space Molded Chip On Board (MCOB) package

Target Applications:
Cellular Base Station, CATV, VSAT
Freq (MHz) 50 500 1000 2000 2500 3500
44

Parasitic Effect Cancellation

IIP3 (dBm) 50.0 50.0 51.9 51.7 52.1 51.8

IP1dB (dBm) 28.0 28.8 29.7 31.2 31.3 32.7

Dynamic Range (dB) 41.1 38.1 35.7 30.3 27.7 22.5

Phase shift (deg) 40.7 40.5 68.8 105.2 117.9 138.1

Max Attn (dB) 43.7 40.8 38.5 33.4 31.0 26.3

IL (dB)

Input RL (dB) -17.4 -18.1 -19.8 -14.3 -14.3 -14.4

Output RL (dB) -17.4 -18.0 -19.6 -13.5 -13.1 -12.0

Current (mA) @ 5V

Avago ALM-38140

2.62 2.72 2.84 3.14 3.28 3.78

3.8x3.8 MCOB

20.5

WSD Wireless Semiconductor Division

Current Controlled VGA

ALM-80110 (0.4-1.6GHz) & ALM-80210 (1.6-2.7GHz)


Broadband 0.25W Variable Gain Amplifiers
Avago ALM-xxxxx

5.0x5.0mm MCOB

Key Value propositions Best in class dynamic range (>30dB) High linearity up to 39.5 dBm OIP3 Low phase shift (<15deg with external inductor) Broad band application 50Ohm input matched and output pre-match Molded Chip On Board (MCOB) package Target Applications: AGC or Temperature Compensation Circuitry

Part Number

Freq (MHz) 900 1900

OIP3 (dBm) 40.0 39.5

P1dB (dBm) 23.2 23.5

Dynamic Range (dB) 40.0 33.0

Gain (dB) 13.5 9.8

NF (dB) 4.8 4.8

IRL (dB) 17.0 13.5

ORL (dB) 12.0 10.5

PAE (%) 41.0 37.0

Control Voltage (V)

Current (mA)

ALM-80110 ALM-80210

1-5V

110

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WSD Wireless Semiconductor Division

PIN Diode Switch

High Power Handling PIN Diode HSMP-386J


Key Value propositions High power handling > 40dBm. High power dissipation using power package. Low Insertion loss. Broad band application
QFN 2x2mm

Target Applications: Wireless system requiring high power transmit/receive switching

Typical Series Typical Breakdown Typical Forward Typical Total Resistance Voltage Voltage Capacitance RS () 0.65 VBR (V) 120 VR = VBR Measure IR 5uA Vf (V) 0.8 CT (pF) 0.75 VR = 50V f = 1MHz

Test Conditions

IF = 50 mA f = 100 MHz

IF = 50mA

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PIN Diode Switch

ALM-40220
TD-SCDMA & TD LTE 10W High Power SPDT Switch
Parameter
Avago ALM-40220

Unit Min Typ Max


MHz dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm % 18 22 31 1 35 35 26 17 40 60 25 No Spec 40 40 25 No Spec 2010-2025 0.45 0.5 0.6

5.0x5.0mm MCOB

Freq TX-ANT Insertion Loss RX-ANT Insertion Loss TX Return Loss Ant Return Loss (Tx Mode) RX Return Loss Ant Return Loss (Rx Mode) TX-RX ISO (Tx Mode) Ant-RX ISO (Tx Mode) RX-TX ISO (Rx Mode) Ant-TX ISO (Rx Mode) TX Input P0.1dB TX-Ant IIP3 * RX Input P0.1dB

Tx

Vctrl 1

Vctrl 2 Ant

Rx

Note: Vc1 = 5V,Vc2 = 0V, Ic1 ~ 50mA during Tx mode. Vc1 = 0V, Vc2=5V, Ic2 ~- 50mA during Rx mode. **Design concept and specification might change upon market release
47

RX Input P1dB ANT-RX IIP3 EVM (with system EVM removed) Tx RF Switching Speed (10% -90% RF voltage) Tx Turn-on Stage F=2.010GHz 1MHz Rep Rate in Modulating Mode

uS

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WSD Wireless Semiconductor Division

External 50ohm Termination Suggestion


Circulator PA

LNA Protection Switch


TX

Ant

During Tx mode, Ant pin connected to Tx pin to absorb any reflected signal from Ant by 50ohm termination. During Rx mode, Ant pin connected to Rx pin.

Chini

RX

50ohm
Va Vc1 Vc2

LNA

Ant TX Chini RX

PA
Va Vc1

LNA 50ohm C

Tx and Rx arm internally connected to Vc2 pad. Tx on, Rx off, Rx will switch to external 50ohm termination. Rx on, Tx off, Tx will switch to external 50ohm termination.

ANT Switch

L Vc2

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PIN Diode Switch

HSMP-386D/389D PIN Diode Diversity Switch


Value Proposition Unique 4 PIN Diode Diversity Switch Configuration High Linearity Great Power Handling Low IL and High ISO Design Simplicity And Board Space Saving With Semi Integrated Solution Applications: Cellular Infrastructure, DECT Phone, Wireless LNA, WiMAX
Typical Parameters at 900MHz Insertion Loss Return Loss Isolation Input IP3 Input P1dB HSMP-386D 0.35 dB 27 dBm 25.4 dB 56.8 dBm 47.4 dBm

SOT-143 Package 3.0 x 1.3 x 1.0 mm

HSMP-386D

HSMP-389D

HSMP-389D 0.36 dB 28 dBm 24.7 dB 55.4 dBm 46.3 dBm

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WSD Wireless Semiconductor Division

Low Power Limiter

ASML-5822/5829 Schottky Assisted Low Power Limiter


Value Proposition Unique combination of PIN and Schottky Diode Schottky diode rectifies the RF and biases the PIN diode on at lower input drive level Low Limiting Threshold Power Low IL IL can be minimised with external inductor resonating out parasitic capacitance. 0.4dB At 2.4GHz. Design Simplicity And Board Space Saving With Semi Integrated Solution Applications: Cellular Infrastructure , WiMAX, LTE, Receiver System, RFID front end protection
20

LEXT

SOT-323 Package 2.0 x 1.2 x 0.95 mm

CPIN CSCH ASML 5822 ASML-5829

ASML-5822

Typical Parameters at 900MHz Insertion Loss Return Loss Output P1dB

ASML5822 0.85dB 10.9dB 2.85dBm

ASML5829 0.33dB 15.6dB 6.05dBm


Pout (dBm)

10 0 -10 -20 -30 -40 -50 -60

fundamental
-70 -80 -10

seco nd harmo nic


-5 0 5 10 15 20 25

Pin (dBm)

50

WSD Wireless Semiconductor Division

Mixer
LPCC 3x3x0.85mm

IAM-92516

High Linearity Mixer


Key Value Propositions High linearity Low LO power Differential RF/LO inputs and differential or single ended IF outputs Target Applications Down Converter for cellular base stations (GSM, CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE, WiMAX, etc)

IAM-92516

Part number

Freq Range (GHz)

Vdd (V)
5

Idq (mA)
26

NF (dB)
12.5

Gain (dB)
-6.0

P1dB (dBm)
9

IIP3 (dBm)
27

Package

IAM92516

0.4-3.5

LPCC 3x3mm

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WSD Wireless Semiconductor Division

Under Development

52

WSD Wireless Semiconductor Division

New Product Roadmap


Legend
Project Status
Released In development Planned development

Description
Product released and available for purchase Fully defined project actively being developed; samples may be available Partially defined project, resources not yet allocated

Concept

Possible future project (continues family or proposed custom)

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Infrastructure Product Roadmap LNAs


2010 Single Ended 1st Stage LNA
Rapala w1 MGA-633P8 900 MHz Active Bias LNA, QFN 2x2mm

2011
MGA-683P8/684P8 Low Cost LNA QFN 2x2mm
Low Cos LNA

2012

2013
Released
In development Planned development Concept

Rapala w2 MGA-634P8 2 GHz Active Bias LNA, QFN 2x2 Rapala w3 MGA-635P8 2.5 GHz Active Bias LNA, QFN 2x2
Balance LNA

Balance 1st Stage LNA

Next Generation Balanced Active Bias LNA, QFN 4x4mm (3 Products)%

2nd or 3rd Stage LNA

Nebula 1 MGA-636P8 900 MHz Low NF High Linearity LNA, QFN 2x2mm Nebula 2 MGA-637P8 2 GHz Low NF High Linearity LNA, QFN 2x2mm

Next Generation High IP3 LNA QFN 2x2mm (3 Products)

TBD

MGA-638P8 2.5 GHz Low NF High Linearity LNA, QFN 2x2mm

Nebula 3

Dual Stage Stage LNA

2GHz High Gain 2 Stage Amp, QFN 4x4mm 900MHHz High Gain 2 Stage Amp, QFN 4x4mm

Mangrove 1

Next Generation Dual Stage LNA QFN TBD (3 Products)

TBD

Mangrove 2

2.5GHz High Gain 2 Stage Amp, QFN 4x4mm

Mangrove 3

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WSD Wireless Semiconductor Division

Infrastructure Product Roadmap LNA Module & Low Voltage LNA


2010 TMA Bypass LNA 2011 2012 2013
Ketapang1 ALM-11036/11136 900MHz TMA Bypass LNA, MCOB 7x10mm Ketapang2 ALM-11236/11336 2GHz TMA Bypass LNA, MCOB 7x10mm

Released In development Planned development Concept

1.9-2.2GHz TD-SCDMA/LTE LNA + High Power SPDT Switch Module, MCOB 8x8mm

Sago1

Switch + LNA

2.3-2.4GHz TD-SCDMA/LTE LNA + High Power SPDT Switch Module, MCOB 8x8mm

Sago2

Low Current LNA + Bypass

Mimosa MGA-64506/65506 3.3V Bypass LNA with Shutdown, QFN 2x1.3mm

3.3V 0.4-1GHz Bypass LNA QFN 2x1.3mm

TBD

55

WSD Wireless Semiconductor Division

Infrastructure Product Roadmap Drivers and VGAs


2010 2011
2.1 GHz Linear PA (Picocell & Femtocell) <-48dBc @28dBm@, MCOB 5x5mm
Flamingo 2.1

2012

2013

Driver Amplifiers

1.9 GHz Linear PA (Picocell & Femtocell) <-48dBc @28dBm@, MCOB 5x5mm

Flamingo 1.9

800MHz Linear PA (Picocell & Femtocell) <-48dBc @28dBm@, MCOB 5x5mm

Flamingo 0.8

2.5-2.7 GHz Linear PA (Picocell & Femtocell) <-48dBc @28dBm@, MCOB 5x5mm MGA-43128 700 MHz LTE 5V Driver, QFN 5x5mm
Heron

Flamingo 2.6

2.3-2.5 GHz Linear PA (Picocell & Femtocell) <-48dBc @28dBm@, MCOB 5x5mm

Flamingo 2.4

0.7-0.8 GHz Linear PA (Picocell & Femtocell) <-48dBc @28dBm@, MCOB 5x5mm

Flamingo 0.7

2GHz High Gain VGA MCOB 6x6mm

Road Runner2

VGA

Released In development Planned development

Concept 56

WSD Wireless Semiconductor Division

Infrastructure Product Roadmap: Gain Blocks


2010
Pinang MGA-31389/31489 High Gain 37dBm Gain Block (0.4-3GHz)

2011

2012

2013

0.1 W

MGA-31789/31889 High LFOM 0.1W Gain Block

Zazu

3-6GHz High LFOM 0.25W Gain Block QFN, TBD (20dB Gain) 3-6GHz High LFOM 0.25W Gain Block QFN, TBD (16dB Gain)
TBD

TBD

0.25 W

AngsanaPlus MGA-31189/31289 High Gain 40dBm Gain Block (0.4-3GHz)

3-6GHz High LFOM 0.25W Gain Block QFN, TBD (20dB Gain)

TBD

0.5 W

MGA-31589/31689 High Gain 0.5W Gain Block

Rajah Brooke

3-6GHz High LFOM 0.5W Gain Block QFN, TBD (20dB Gain)

TBD

AVT-54689 AVT-55689 HBT Gain Block Hi-OIP3 G:17dB

Jati

<0.1 W

Released In development Planned development Concept

57

WSD Wireless Semiconductor Division

Released!!!

MGA-636P8, MGA-637P8 & MGA-638P8


BTS Low NF High Linearity LNA
Value Propositions Industrys standard QFN 2mmx2mm package Very high linearity Low NF High & consistent gain across frequency Built in Shutdown Function Stable performance across temperature
Target Applications: Q2/3 LNA or Pre-driver Amplifier for cellular base stations (GSM, CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE and WiMAX, etc)
Part number Freq Range (GHz) Test Freq (GHz) Vd (V) Idq (mA) NF (dB) Gain (dB) IIP3 (dBm)
8 Ground 7 6 5 1 2 3 4 Bottom View MoSLP 2.0 x 2.0 x 0.75 mm

Vdd C6 L2 RFin C1 L1 R1 C5
[1] [2] [3] Bias [4] [5] [8] [7] [6]

C4 C2 RFout C7 C8

C3

Rbias

Vbias2

Power Down

Simplified Schematic

S11 (dB)

S22 (dB)

MGA-636P8
MGA-637P8 MGA-638P8

0.45 1.5
1.5 2.5 2.5 4.0

0.7
1.7 2.6

4.8
4.8 4.8

114
90 70

0.5
0.70 0.81

17.9
16.8 15.5

25.0
24.0 24.5

10.0
20.0 13.0

17.0
9.0 7.0

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Released!!!

MGA-683P8 & MGA-684P8


LNA For Cellular Repeater
Value Propositions Ultra low noise figure Broadband 0.4 4.0GHz Built active bias circuit Smart bias: Adjustable current Unconditionally stable Target Applications: Low Noise Amplifier for Cellular Repeater
Simplified Schematic 8 Ground 7 6 5 1 2 3 4

Bottom View
MoSLP 2.0 x 2.0 x 0.75 mm

Product

Freq range (GHz)

Test range (GHz) 0.9 1.9

Current (mA) 45 @ 5V 34 @ 5V

NF (dB) 0.60 0.78

Gain (dB) 17.6 17.1

OIP3 (dBm) 34.7 31.0

P1dB (dBm) 21.9 21.3

S11 (dB) 21.0 19.0

S22 (dB) 13.0 12.5

MGA-683P8 MGA-684P8

0.4-1.5 1.5-4.0

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Released!!!

ALM-11036, ALM-11136, ALM-11236 & ALM-11336


Key Value propositions Very Low Noise Figure Low loss fail safe by-pass mode High Gain and linearity PIN Diode high linearity switch Simplify application Circuitry Target Applications: Tower Mounted Amplifier (TMA)
Parameter Frequency Test Freq Gain S11 S22 Noise Figure IIP3 IP1dB Bypass Insertion Loss Bypass S11 ALM-11036 776_850 MHz 849 MHz 15.6 dB >18 dB >18 dB 0.78 dB @ 25C 21.3 dBm 4.0 dBm 0.82 dB >18 dB

TMA LNA Module With Fail-Safe Bypass


Target Release : April11 Sample Availability: Now!!!
Avago ALM-xxxxx

7.0x10.0mm x1.2mm MCOB

Module

ALM-11136 870_915 MHz 900 MHz 15.4 dB >18 dB >18 dB 0.76 dB @ 25C 22.0 dBm 4.6 dBm 0.85 dB >18 dB

ALM-11236 1710_1850 MHz 1780 MHz 15.9 dB >18 dB >18 dB 0.85dB @ 25C 17.3 dBm 3.5 dBm 0.75 dB >18 dB

ALM-11336 1850_1980 MHz 1980 MHz 15.3 dB >18 dB >18 dB 0.88dB @ 25C 17.9 dBm 3.8 dBm 0.78 dB >18 dB

Bypass S22
Switch Isolation (LNA On) Supply Voltage Supply Current

>18 dB
>50 dB 5V 92 mA

>18 dB
>50 dB 5V 92 mA

>18 dB
>50 dB 5V 99 mA

>18 dB
>50 dB 5V 100 mA

TMA System Block Diagram

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Under Development

ALM-12124 & ALM-12224


TD-SCDMA/LTE High Power Switch-LNA Module

61

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Released!!!

ALM-12124 & ALM-12224


TD-SCDMA/LTE High Power Switch-LNA Module
Rx Mode (Ant to Rx Out) Parameter
Freq Test Freq Supply Voltage (Vbias, Vdd1, Vdd2) Control voltage (Vctrl1, Vctrl2) Total current NF Gain OIP3 (*Pin = -25dBm) OP1dB Sw itching (Tx/Rx mode) Ant Return loss Isolation (LNA1 output - LNA2 input) LNA1 output return loss LNA2 input return loss

Unit
MHz MHz V V mA dB dB dBm dBm nS dB dB dB dB

Spec
ALM-12124 ALM-12224 1880-2025 2018 5 0, 28 225 0.85 39.2 36.5 23.6 <1us -15.6 51.2 -18.0 -20.1 2300-2400 2400 5 0, 28 229 0.99 36.7 38.7 22.8 <1us -16.2 54.4 -25.4 -22.6

8.0 mm x 8.0mm x 1.2mm

Tx Mode (Ant to Tx) Parameter


Tx-Ant Insertion loss Max input pow er (CW, 5mins testing) Isolation (ANT-LNA1 input) Ant Return loss

Unit
dB dBm dB dB

ALM-12124 ALM-12224 0.30 0.37 47.5 51.5 -20.7 47.5 41.2 -20.0

62

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Released!

MGA-13116, MGA-13216 & MGA-13316


2-Stage High Gain & High Linearity LNA
Value Propositions Integration of Q1 & Q2 LNA in single package Very high linearity at low current High Gain Superior Q1-Q2 Isolation Broad operating frequency range Pre-matched for ease of use
Target Applications:

Low Noise Amplifier for cellular base stations (GSM, CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE, WiMAX, etc)

Part No. MGA-13116 MGA-13216 MGA-13316


63

Freq Range (MHz) 400-1500 1500-2500 2500-4000

Test Freq (MHz) 900 1950 2500

Vd (V) 5 5 5

Id (mA) 166 175 193

NF (dB) 0.54 0.68 0.70

Gain (dB) 38.0 35.9 34.0

OIP3 (dBm) 42.0 40.5 41.0

IRL (dB) 18.0 15.3 NA

ORL (dB) 12.0 10.3 NA

OP1dB (dBm) 23.4 23.3 23.0

Q1-Q2 ISO (dB) 51 46 50

Avago Confidential

WSD Wireless Semiconductor Division

Released!

MGA-16116, MGA-16216 & MGA-16316


Ultra Low NF Balance LNA MMIC With Shutdown Feature
Key Value Propositions Ultra Low NF High Linearity Dual, matched pair LNA Excellent isolation Built-in active bias & Power Down circuitry Industry standard QFN 4x4 package
4 mm 4 mm 16-lead QFN, ( 4x4 )mm
Idq (mA) 60.9 52.5 53.3 NF (dB) 0.27* 0.32* 0.45* Gain (dB) 18.4 18.4 18.2 IIP3 (dBm) 19.1 17.1 15.5 S11 (dB) -10.9 -9.0 -12.7 Vshutdown** Active Low Active Low Active Low

Part number MGA-16116 MGA-16216 MGA-16316

Freq Range (GHz) 0.45 1.5 1.44 2.35 2.3 4.0

Test Freq (GHz) 0.9 1.95 2.6

Vd (V) 4.8 4.8 4.8

* Demoboard losses are deembedded. ** VLOW : < 0.8V, VHIGH : > 1.8V

64

WSD Wireless Semiconductor Division

Released!

MGA-31716 & MGA-31816


High Linearity / Low Current 0.1W Driver Amplifier
Value Propositions DC to 4.0GHz operating freq
Industrys standard QFN 3mmx3mm package High and consistent gain across major freq band High linearity / Low current (Figure of Merit) 50 ohm matching Stable performance across temperature
Target Applications: Pre-driver Amplifier for cellular base stations (GSM, CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE and WiMAX, etc)
Part number MGA-31716 MGA-31816 Freq Range (GHz) DC 1.5 1.5 4.0 Test Freq (GHz) 0.9 1.9 Vd (V) 5 5 Idq (mA) P1dB (dBm) OIP3 (dBm) Gain (dB) 20.1 19.5 S11 (dB) 15.2 15.8 S22 (dB) 16.5 10.3 NF (dB) 1.6 1.6 Can be used to trade-off Linearity with OP1dB

49

21.2

39.0

50

19.8

39.5

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WSD Wireless Semiconductor Division

Released!

MGA-43128
700MHz 29dBm OFDMA Linear Power Amplifier
Value Propositions
5V operation High efficiency 29dBm Linear Pout Integrated switch control attenuator Integrated shutdown and power detector Optimize for band 12/13 downlink Input fully match Partial output match enable optimum narrow band performance with different external matching
Part number Freq range (GHz) Vdd (V) Idd (mA) @ Plin Idq (mA) Pout (dBm) EVM (%) PAE (%) Gain (dB) Det Range (dB) Atte. (dB) Package (mm) P1dB (dBm) Matching
66

5.0x5.0mm QFN

MGA-43128 728-756 5 780 380 29.2 2.5% 24% 33.4 15 18 5x5x0.85 36 Partial* Avago Confidential

MGA-43128

**Design concept and specification might change upon market release

* Input fully-matched and output partial matched

WSD Wireless Semiconductor Division

Released!

Power Amplifier For In Door Small Cell


Value Propositions
5V operation, operable up to 5.5V for Higher Pout High efficiency High Linear Pout Input & Output Fully Matched Integrated shutdown and power detector
5.0x5.0mm MCOB

Parameters
Freq range (GHz) Vdd (V) Idq (mA) Pout (dBm) @50dBc ACLR *1 PAE (%)

MGA-43428
0.86-0.90 5 350 27.2 14.9% 33.7 20

MGA-43528
1.93-1.995 5 400 27.2 13.6% 41.9 20

MGA-43628
2.0-2.2 5 440 27.2 14.0% 41.5 20

Gain (dB)
Det Range (dB) Package (mm) P1dB (dBm) Matching
1 Test

5x5x1.1
37.2 Fully Matched

5x5x1.1
37.2 Fully Matched

5x5x1.1
36.8 Fully Matched

Tone #1, 64 DPCH, +/- 5 MHz offset

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Under Development

Power Amplifier For In Door Small Cell


Value Propositions
5V operation, operable up to 5.5V for Higher Pout High efficiency High Linear Pout Input & Output Fully Matched Integrated shutdown and power detector
5.0x5.0mm MCOB

Parameters
Freq range (GHz) Vdd (V) Idq (mA)

MGA-43728
2.62-2.69 5 400

MGA-43828
0.88-0.97 5 400 27.0

MGA-43013
Band 13 5 400

Pout (dBm) @50dBc ACLR *1 Pout (dBm) @48dBc ACLR *2


PAE (%) Gain (dB) Det Range (dB) Package (mm) P1dB (dBm) Matching
1 Test 2

27.0

27.0

14.0%
41.0 20 5x5x1.1 37.0 Fully Matched

15.0%
34.0 20 5x5x1.1 37.0 Fully Matched

15.0%
34.0 20 5x5x1.1 37.0 Fully Matched

MGA-43728, 43828 Target Release March13 Sample Availability: Nov12 MGA-43013 Target Release July13 Sample Availability: Feb13

Tone #1, 64 DPCH, +/- 5 MHz offset E-UTRA Test Model 1.1 10MHz 50RB

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Released!

ALM-81224
Key Value propositions Superior linearity performance High dynamic range High Gain Broad band application Simplify application Circuitry

1450-2750MHz High Gain VGA Module

Target Release Sep11 Sample Availability: Now!!!

Target Applications: AGC or Temperature Compensation Circuitry


Parameter Test Freq Max Gain S11 S22 Gain Control Range NF ACLR1 @12dBm OIP3 OP1dB Pin Max Control Voltage Range Quiscent Current (Vc=0) typ Stability factor
69

Unit MHz dB dB dB dB dB dBc dBm dBm dBm V mA

1450-2750MHz 2140 23.8 15 10 38 2 @max gain -66.6 42 27.4 +15 min 0-3.3 390 unconditional

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WSD Wireless Semiconductor Division

Back up Slides

70

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WSD Wireless Semiconductor Division

WiFi LNA

ALM-2812
Dual band 2.4-2.5GHz & 4.9-6GHz (802.11a/b/g/n) WiFi LNA
MCOB, 3x3x1.1mm

Market and Competition: WiFi LNA for Labtop, CPE, Access Point, USB dongle, PDA/Smart Phones Avagos Competitive Advantage: Fully matched GaAs E-pHEMT LNA module Industrys best NF and Gain performance at 2.42.5GHz and 4.9-6GHz bands.
Vcc

Parameter Voltage (V) Current (mA) Gain (dB) NF (dB) IIP3 (dBm) IP1dB (dBm)

2.45GHz 3.3 15 16.7 0.8 +6.1 -5.8

5.5GHz 3.3 23.4 23.2 1.4 -2.2 -12.8 2.4-2.5GHz RFOut52 4.9-6GHz
RFOut24

LNAOn52 RFIn52

RFIn24 LNAOn24 Vcc

Simplified Schematic

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Wireless Data LNA

UMTS 1.7-2.2 GHz, WiFi, WiBro WiMAX LNA


Value Propositions Ultra thin package (0.4mm) for module application Very low noise E-pHEMT technology High linearity at low operating current Built in bias control & shutdown functions Low external component count
P/N MGA-645T6 MGA-655T6 MGA-675T6 Freq Range Freq (GHz) Vd (V) (GHz) 1.5 - 3.0 2.5 - 4.0 4.9 - 6.0 2.4 3.5 5.5 3 3 3 LNA Mode Id (mA) NF (dB) IIP3 (dBm) 7 10 10 1.1 1.2 1.75 7 3 -3 Gain (dB) 15 15 18 IP1dB (dBm) -6 +1 -10

Surface Mount 2.0 x 1.3 x 0.4 mm3 UTSLP

Bypass IIP3 IL (dB) (dBm) 4.5 17 6.5 19 N/A N/A

Package (mm) 2x1.3x0.4 2x1.3x0.4 2x1.3x0.4

Note: MGA-675T6 does not have bypass switch

MGA-675T6
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MGA-645T6

WSD Wireless Semiconductor Division

Wireless Data LNA

New UMTS, WiFi, WiMAX & LTE LNA


Value Propositions Very low noise E-pHEMT technology High linearity at low operating current Built in bias control & shutdown functions (<100uA shutdown current) Low external component count Miniature Package Target Application LNA or Pre-Driver for USB Dongle, CPE, AP, Cellular Handset and etc. Target Release MGA-64606: Feb11; MGA-65606: Mar11 Samples now

Vbyp

Vsd
Low Low High

Bypass Switch Close Open Open

Mode
Bypass LNA Isolation

Surface Mount 2.0 x 1.3 x 0.5 mm3 DFN


LNA Mode Id (mA) NF (dB) IIP3 (dBm) 7 10 1.1 1.2 7 5.5 Gain (dB) 15 15 IP1dB (dBm) -6 +1

Low High xxx

P/N MGA-64606 MGA-65606

Freq Range Freq (GHz) Vd (V) (GHz) 1.5 - 3.0 2.5 - 4.0 2.4 3.5 3 3

Bypass IIP3 IL (dB) (dBm) 4.5 16 4.2 19

Package (mm) 2x1.3x0.5 2x1.3x0.5

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Wireless Data LNA

Mobile TV and UMTS 0.7-1.0 GHz LNA


Value Propositions Ultra thin package (0.4mm) for module application Very low noise figure High linearity at low operating current Built in bypass function (MGA-785T6) Low external component count
Surface Mount 2.0 x 1.3 x 0.4 mm3 UTSLP

P/N

MGA-685T6 MGA-785T6

Freq Range Freq (GHz) Vd (V) (GHz) 0.1 - 1.5 0.5 3 0.1 - 1.5 0.6 3

LNA Mode Gain Id (mA) NF (dB) IIP3 (dBm) (dB) 10 0.8 0 19 10 1.5 0 15.5 IP1dB (dBm) -0.5 TBD

Bypass Package (mm) IL (dB) IIP3 (dBm)

N/A 2.7

N/A 30

2x1.3x0.4 2x1.3x0.4

RF in

4.7 pF

22 nH

W = 28 mils L = 90 mils

MGA-785T6
MGA-725T6

W = 28 mils L = 90 mils

MGA-685T6
8.2 pF RF out

3V 10nF

47 nH

200 pF 27 nH 68 ohm (10 mA) OR 110 ohm(7 mA)

0ohm
120 pF

68pF
51 ohm 120 pF

4.3Kohm
0.1 uF

47nH RF In 68pF 4.7nH


+3 volts

Board Material: 16 mils FR4

68pF

RF Out

MGA-685T6 MGA-685T6

MGA-785T6
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Wireless Data PA

MGA-545P8 50MHz to 7GHz Medium Power Amplifier


Value Proposition: Single +3.3V Supply PAE 46% at Psat 22dBm Simple match at input Unconditionally stable Target Application: IEEE802.11a,b and g WiFi applications, 50MHz to 7GHz applications
Simplified Internal Schematic

Parameter

Typical Spec (Saturation Mode)

Typical Spec (Linear Mode)

Test Frequency
Bias Condition Gain OIP3 P1dB Linear Power @ 4% EVM, 54Mbps OFDM Package

5.825 GHz
3.3V, 92mA 9.5 db 34 dBm 22 dBm (Psat) NA QFN 2x2x0.75mm

5.825 GHz
3.3V, 135mA 11.5 dB 34 dBm 21 dBm > 15dBm QFN 2x2x0.75mm
Vdd = 3.3V Input Signal=OFDM signal with 54Mbps, Modulation=64QAM

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General Purpose Amp


SOT-363 2 x 1.2 x 0.95 mm

MGA-83563
0.5 to 6GHz Medium Power Amplifier
Value Proposition: Single +3V Supply 50 Ohm matched output, and simple match at input High PAE 38% at Psat Unconditionally stable Target Application: 0.5 to 6GHz wireless applications
Simplified Internal Schematic

Parameter

Typical Spec

Test Frequency
Bias Condition Gain OIP3 P1dB Psat (Idd=139mA) PAE

2.4 GHz
3V, 152mA 22.0 dB 29.0 dBm 19.2 dBm 22.4 dBm 37%

76

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