AOD446 N-Channel Enhancement Mode Field Effect Transistor

General Description
The AOD446 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD446 is Pb-free (meets ROHS & Sony 259 specifications). AOD446L is a Green Product ordering option. AOD446 and AOD446L are electrically identical.
TO-252 D-PAK

Features
VDS (V) = 75V ID = 10 A (VGS = 20V) RDS(ON) < 130 m (VGS = 20V) @ 5A RDS(ON) < 140 m (VGS = 10V) RDS(ON) < 165 m (VGS = 4.5V)

Top View Drain Connected to Tab

G S

Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current
C C C

Maximum 75 25 10 10 20 10 15 20 10 2.1 1.3 -55 to 175

Units V V A A mJ W W C

TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25C

Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B

Symbol t 10s Steady-State Steady-State RJA RJC

Typ 17.4 50 4

Max 30 60 7.5

Units C/W C/W C/W

Alpha & Omega Semiconductor, Ltd.

AOD446

Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=10mA, VGS=0V VDS=60V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=20V, ID=5A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=10V, ID=5A VGS=4.5V, ID=2A gFS VSD IS Forward Transconductance VDS=5V, ID=10A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 1 20 100 180 105 120 9 0.79 1 10 293 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 51 20 2.2 5.2 VGS=10V, VDS=37.5V, ID=5A 2.46 1 1.34 4.6 VGS=10V, VDS=37.5V, RL=7.5, RGEN=3 IF=5A, dI/dt=100A/s 2.3 14.7 1.7 25 27 30 3 6.5 3.5 350 130 220 140 165 2.4 Min 75 1 5 100 3 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/s

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AOD446

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 220 Normalized On-Resistance 200 180 RDS(ON) (m) 160 140 120 100 80 0 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 2 4 VGS=20V VGS=10V VGS=4.5V 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V, 2A VGS=20V, 5A VGS=10V, 5A 7V 5V 4.5V VGS=4V 3.5V ID(A) 10V 6V 10 8 6 4 25C 2 0 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics VDS=5V

125C

260 240 220 RDS(ON) (m) IS (A) 200 180 160 140 120 100 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C ID=5A 125C

1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C

Alpha & Omega Semiconductor, Ltd.

AOD446

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 VDS=37.5V ID=5A Capacitance (pF) 400 350 300 250 200 150 100 50 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 200 10s Power (W) 10.0 ID (Amps) RDS(ON) limited 1ms 100s 160 120 80 40 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance 10 100 0 0.0001 TJ(Max)=175C TA=25C 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Coss Ciss

VGS (Volts)

TJ(Max)=175C, TA=25C

10ms 1.0 DC

0.001

0.01

0.1

10

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=7.5C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD Ton Single Pulse

0.01 0.00001

0.0001

0.001

0.01

0.1

10

100

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

AOD446

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

12 ID(A), Peak Avalanche Current 10 8 6 4 2 0 0.00001
TA=25C

25

BV VDD

Power Dissipation (W)

tA =

L ID

20 15 10 5 0

0.0001

0.001

25

50

75

100

125

150

175

Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability

TCASE (C) Figure 13: Power De-rating (Note B)

12 10 Current rating ID(A) 8 6 4 2 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B)

50 40 Power (W) 30 20 10 0 0.001 TA=25C

0.01

0.1

10

100

1000

Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)

10 ZJA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000

0.01

Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.