JABATAN TENAGA MANUSIA KEMENTERIAN SUMBER MANUSIA ARAS 6 BLOK D4, KOMPLEKS D PUSAT PENTADBIRAN KERAJAAN PERSEKUTUAN 62530

PUTRAJAYA

KERTAS PENERANGAN
KOD NAMA DAN PROGRAM / PROGRAM CODE AND NAME TAHAP/ LEVEL No. DAN TAJUK MODUL/ MODULE No. AND TITLE EE-020-2 ASSISTANT SEMICONDUCTOR TECHNICIAN L2 DES4243 SEMICONDUCTOR FABRICATION 1 01.01 CARRY OUT SEMICONDUCTOR PACKAGING EQUIPMENT CONDITION CHECK 01.02 CARRY OUT SEMICONDUCTOR PACKAGING EQUIPMENT SAFETY CHECK 01.03 TROUBLESHOOT SEMICONDUCTOR PACKAGING EQUIPMENT FAILURE 01.04 CARRY OUT SEMICONDUCTOR PACKAGING EQUIPMENT PARTS/COMPONENTS FAILURE REPAIR/REPLACEMENT
CARRY OUT SEMICONDUCTOR PACKAGING EQUIPMENT AND COMPONENTS MAINTENANCE USING STANDARD OPERATING PROCEDURE, EQUIPMENT MANUFACTURER SPECIFICATION, EQUIPMENT DATA BOOK, LOGBOOK, CHECKLIST, HAND TOOLS, REPORT FORMS, PERSONAL PROTECTIVE EQUIPMENT (PPE), RECORDING PROCEDURE SO THATSEMICONDUCTOR PACKAGING EQUIPMENT RECORDED AND REPORTED, FAULTY COMPONENTS REPAIRED, FUNCTIONALITY TESTED AND MAINTENANCE ACTIVITY REPORTED IN ACCORDANCE WITH MANUFACTURER MANUAL. EE-020-2/DES4243/LE01/P

No. DAN PERNYATAAN TUGASAN TASK (S) No. AND STATEMENTS

OBJEKTIF MODUL / MODULE OBJECTIVE

No. KOD / CODE No.

Muka : 1 Drp : 7

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TAJUK : TUJUAN :

EE-020-2/DES4243/LE01/P

Muka: 2 Drp 7

THERMAL OXIDATION

Kertas penerangan ini menerangkan tentang proses thermal oxidation dan applikasinya dalam fabrikasi semikonduktor. PENERANGAN : 1.0 OVERVIEW OF THERMAL OXIDATION

The oxide of silicon, or silicon dioxide (SiO2), is one of the most important ingredients in semiconductor manufacturing, having played a crucial role in the development of semiconductor planar processing. The formation of SiO2 on a silicon surface is most often accomplished through a process called thermal oxidation. Thermal oxidation, as its name implies, is a technique that uses extremely high temperatures (usually between 700-1300 deg C) to promote the growth rate of oxide layers. The thermal oxidation of SiO2 consists of exposing the silicon substrate to an oxidizing environment of O2 or H2O at elevated temperature, producing oxide films whose thicknesses range from 60 to 10000 angstroms. Oxidation of silicon is not difficult, since silicon has a natural inclination to form a stable oxide even at room temperature, as long as an oxidizing ambient is present. The elevated temperature used in thermal oxidation therefore serves primarily as an accelerator of the oxidation process, resulting in thicker oxide layers per unit of time.

Thermal oxidation is accomplished using an oxidation furnace (or diffusion furnace, since oxidation is basically a diffusion process involving oxidant species), which provides the heat needed to elevate the oxidizing ambient temperature. A furnace typically consists of: 1) a cabinet; 2) a heating system; 3) a temperature measurement and control system; 4) fused quartz process tubes where the wafers undergo oxidation; 5) a system for moving process gases into and out of the process tubes; and 6) a loading station used for loading (or unloading) wafers into (or from) the process tubes.

Figure 1: An oxidation furnace (left) and cross section of the oxidation furnace.

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Muka: 3 Drp:7

The heating system usually consists of several heating coils that control the temperature around the furnace tubes. The wafers are placed in quartz glassware known as boats, which are supported by fused silica paddles inside the process tube. A boat can contain many wafers, typically 50 or more. The oxidizing agent (oxygen or steam) then enters the process tube through its source end, subsequently diffusing to the wafers where the oxidation occurs. Depending on which oxidant species is used (O2 or H2O), the thermal oxidation of SiO2 may either be in the form of dry oxidation (wherein the oxidant is O2) or wet oxidation (wherein the oxidant is H2O).

2.0

DRY OXIDATION

The reactions for dry oxidation are governed by the following equation:

Si (solid) + O2 (vapor) --> SiO2 (solid)

During dry oxidation, the silicon wafer reacts with the ambient oxygen, forming a layer of silicon dioxide on its surface.

3.0

WET OXIDATION

The reactions for wet oxidation are governed by the following equation:

Si (solid) + 2H2O (vapor) --> SiO2 (solid) + 2H2 (vapor)

In wet oxidation, hydrogen and oxygen gases are introduced into a torch chamber where they react to form water molecules, which are then made to enter the reactor where they diffuse toward the wafers. The water molecules react with the silicon to produce the oxide and another byproduct, i.e., hydrogen gas.

Oxide growth rate is affected by time, temperature, and pressure. More specifically, oxide growth is accelerated by an increase in oxidation time, oxidation temperature, or oxidation pressure. Other factors that affect thermal oxidation growth rate for SiO2 include: the crystallographic orientation of the wafer; the wafer's doping level; the presence of halogen impurities in the gas phase; the presence of plasma during growth; and the presence of a photon flux during growth.

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4.0

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Muka: 4 Drp:7

APPLICATION OF OXIDATION

4.1

DIFFUSION MASK

Dopant atoms such as Boron and Phosphorus have much lower diffusion rates in SiO2 than in single crystal silicon. Thus, SiO2 can be used as diffusion mask.

4.2

SCREEN OXIDE

Screen oxide is commonly used for ion implantation process. It helps preventing silicon contamination by blocking the sputtered photoresist.

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4.3 BARRIER LAYER

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Muka: 5 Drp:7

Trench fill is a dielectric chemical vapor deposition (CVD) process in which undoped silicate glass (USG) is doped to fill the trench for electrical isolation of neighboring transistors. CVD process always brings the impurities. Thermally grown SiO2 barrier layer is necessary to prevent possible contamination of silicon substrate before the trench fill.

4.4

PAD OXIDE

Silicon nitride film could crack and even break down the silicon wafer due to high tensile stress. Pad oxide relieves the strong tensile stress of the nitride and prevents stress induced silicon defects.

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4.5 BLANKET FIELD OXIDE

EE-020-2/DES4243/LE01/P

Muka: 6 Drp:7

Thermally growing a thick layer of SiO2 patterning it via photolithography and etching the oxide with hydrofluoric acid (HF). Activation areas can be opened for transistor making. Blanket field oxide is one of the techniques used to isolate neighboring devices.

4.6

LOCOS

Thick layer of oxide is grown on the area which is not covered by silicon nitride. Oxygen molecules continuously diffuse across SiO2 layer, react with silicon to form more SiO 2. Oxygen molecules cannot diffuse across the nitride layer. Silicon underneath the nitride layer does not oxidize. Local oxidation of silicon (LOCOS) is one of the techniques used to isolate neighboring devices which has better isolation effect than blanket field oxide.

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Muka: 7 Drp:7

4.7

GATE OXIDE

Gate oxide is thinnest and most critical layer which acts as device dielectric.

SOALAN:

1. Terangkan maksud proses oxidation.

2. .Terangkan 5 applikasi oxidation dalam fabrikasi semikonduktor.

RUJUKAN:

1. Introduction to Semiconductor Manufacturing Technology, Hong Xiao, 2001, McGraw Hill, ISBN: 97800342348036.