Beruflich Dokumente
Kultur Dokumente
Gokaran Shukla
Layout
Introduction Physical Models Role of insulating oxide in TMR Analysis of ZnO GaN, AlN as Tunnel Barrier
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Jullier Model
Model : Short coming: Independence from geometry and the electronic structure of barrier layer Sign of P
Slonczewski's Model
Butler Model
Model count Geometery and electronics structure of both Ferromagnet & insulating barrier Its also count curvature effect of wave function
Example
Example
Insulator barrier height Insulator barrier width(thickness) Crystalinity of the barrier material Electronic structure of the barrier
Orientation of both Ferromagnetic Electrode Insulator barrier height, barrier thickness, crystalinity and elctronic structure of electrode as well as barrier material.
ZnO is a ferroelectric material, and this material is the backbone of Display industries. Although ZnO has a smaller band gap than MgO/Al2O3 but the presensce of spontaneous polarization could assist in spin filtering and thus direct spin injection could be possible in ZnO Blue LED and Blue Laser based on the GaN/AlN . So, spin polarized light could possible by direct spin injection in these material.
Complex Band
Co & Fe Band
AlN Transport
Conclusion
Discussed about TMR principle. ZnO GaN AlN as a tunnel barier for spin filtering with major goal is to direct spin injection in these materials. It seems that Co would prefer vacant site rather than Oxygen/Zinc. This is very opposite from Fe|MgO|Fe case where Fe is on top of Oxygen. A proper electrode material need to be look which fulfill the desire for GaN and AlN