IRFD110, SiHFD110

Vishay Siliconix

Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 8.3 2.3 3.8 Single
D

FEATURES
100 0.54

Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175 C Operating Temperature Fast Switching and Ease of Paralleling Compliant to RoHS Directive 2002/95/EC
Available

RoHS*
COMPLIANT

HVMDIP

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

G S D G S N-Channel MOSFET

ORDERING INFORMATION
Package Lead (Pb)-free SnPb HVMDIP IRFD110PbF SiHFD110-E3 IRFD110 SiHFD110

ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)

PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TA = 25 C EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TA = 25 C TA = 100 C SYMBOL VDS VGS ID IDM LIMIT 100 20 1.0 0.71 8.0 0.0083 140 1.0 0.13 1.3 5.5 - 55 to + 175 300d W/C mJ A mJ W V/ns C A UNIT V

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 C, L = 52 mH, Rg = 25 , IAS = 2.0 A (see fig. 12). c. ISD 5.6 A, dI/dt 75 A/s, VDD VDS, TJ 175 C. d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91127 S10-2466-Rev. C, 25-Oct-10 www.vishay.com 1

IRFD110, SiHFD110
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient SYMBOL RthJA TYP. MAX. 120 UNIT C/W

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS

VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 20 V VDS = 100 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 150 C VGS = 10 V ID = 0.60 Ab VDS = 50 V, ID = 0.60 Ab

100 2.0 0.80

0.12 -

4.0 100 25 250 0.54 -

V V/C V nA A S

VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5

180 81 15 6.9 16 15 9.4 4.0 6.0

8.3 2.3 3.8 nH ns nC pF

VGS = 10 V

ID = 5.6 A, VDS = 80 V, see fig. 6 and 13b

VDD = 50 V, ID = 5.6 A, Rg = 24 , RD = 8.4 , see fig. 10b

Between lead, 6 mm (0.25") from package and center of die contact

100 0.44

1.0 A 8.0 2.5 200 0.88 V ns C

TJ = 25 C, IS = 1.0 A, VGS = 0 Vb TJ = 25 C, IF = 5.6 A, dI/dt = 100 A/sb

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %.

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Document Number: 91127 S10-2466-Rev. C, 25-Oct-10

IRFD110, SiHFD110
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

VGS 101
Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V

101 25 C

ID, Drain Current (A)

ID, Drain Current (A)

175 C

100

100 4.5 V 20 s Pulse Width TA = 25 C 10-1 100 101

10-1 4
91127_03

20 s Pulse Width VDS = 50 V 5 6 7 8 9 10

91127_01

VDS, Drain-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TA = 25 C

Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance (Normalized)

101 Top

ID, Drain Current (A)

100

VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V

3.0 2.5 2.0 1.5 1.0 0.5

ID = 5.6 A VGS = 10 V

4.5 V

20 s Pulse Width TA = 175 C 10-1

91127_02

100

101

0.0 - 60 - 40 - 20 0

20 40 60 80 100 120 140 160 180

VDS, Drain-to-Source Voltage (V)

91127_04

TJ, Junction Temperature (C)

Fig. 2 - Typical Output Characteristics, TA = 175 C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91127 S10-2466-Rev. C, 25-Oct-10

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IRFD110, SiHFD110
Vishay Siliconix

400

ISD, Reverse Drain Current (A)

320

Capacitance (pF)

VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd

175 C

240 Ciss 160 Coss

100

25 C

80 Crss 0 100
91127_05

10-1 VGS = 0 V

101

0.5
91127_07

0.6

0.7

0.8

0.9

1.0

1.1

1.2

VDS, Drain-to-Source Voltage (V)

VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20

VGS, Gate-to-Source Voltage (V)

ID = 5.6 A VDS = 80 V

102
5

Operation in this area limited by RDS(on)

16

ID, Drain Current (A)

VDS = 50 V VDS = 20 V

10
5 2

12

10 s 100 s 1 ms 10 ms TA = 25 C TJ = 175 C Single Pulse

2 5

1
5

4
For test circuit see figure 13

0 0
91127_06

10
91127_08

0.1 0.1

10

102

103

QG, Total Gate Charge (nC)

VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

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Document Number: 91127 S10-2466-Rev. C, 25-Oct-10

IRFD110, SiHFD110
Vishay Siliconix

RD VDS

1.0
Rg

VGS

D.U.T. + - VDD

ID, Drain Current (A)

0.8
10 V
Pulse width 1 s Duty factor 0.1 %

0.6

0.4

Fig. 10a - Switching Time Test Circuit

0.2 VDS 0.0 25

91127_09

90 % 50 75 100 125 150 175

TA, Ambient Temperature (C)

10 % VGS td(on) tr td(off) tf

Fig. 9 - Maximum Drain Current vs. Ambient Temperature

Fig. 10b - Switching Time Waveforms

103

Thermal Response (ZthJA)

102

0 - 0.5

0.2 10 0.1 0.05 0.02 1 0.01 Single Pulse (Thermal Response)

PDM t1

0.1

10-2 10-5
91127_11

t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 0.1 1 10 102 103

10-4

10-3

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Document Number: 91127 S10-2466-Rev. C, 25-Oct-10

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IRFD110, SiHFD110
Vishay Siliconix

L Vary tp to obtain required IAS Rg VDS tp VDD D.U.T. I AS 10 V tp 0.01 W IAS

Fig. 12b - Unclamped Inductive Waveforms

VDS

+ -

V DD

VDS

Fig. 12a - Unclamped Inductive Test Circuit

350

EAS, Single Pulse Energy (mJ)

300 250 200 150 100 50 0 VDD = 25 V 25 50 75 100

ID 0.82 A 1.4 A Bottom 2.0 A Top

125

150

175

91127_12c

Starting TJ, Junction Temperature (C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator Same type as D.U.T.

50 k
12 V

10 V QGS

QG
0.2 F

0.3 F

QGD D.U.T.

+ -

VDS

VG

VGS
3 mA

Charge
IG ID Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform

Fig. 13b - Gate Charge Test Circuit

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Document Number: 91127 S10-2466-Rev. C, 25-Oct-10

IRFD110, SiHFD110
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer

D.U.T.

Rg

dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor D D.U.T. - device under test

+ VDD

Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va

D.U.T. lSD waveform Reverse recovery current

Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt

VDD

Re-applied voltage Inductor current

Body diode forward drop

Ripple 5 % Note a. VGS = 5 V for logic level devices

ISD

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91127.

Document Number: 91127 S10-2466-Rev. C, 25-Oct-10

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Package Information
Vishay Siliconix
HVM DIP (High voltage)
0.248 [6.29] 0.240 [6.10]

0.043 [1.09] 0.035 [0.89]

0.133 [3.37] 0.125 [3.18]

0.197 [5.00] 0.189 [4.80]

0.180 [4.57] 0.160 [4.06] 0.094 [2.38] 0.086 [2.18] A L 0.160 [4.06] 0.140 [3.56]

0.017 [0.43] 0.013 [0.33]

0 to 15 2x E min. E max.

0.045 [1.14] 2 x 0.035 [0.89] 0.100 [2.54] typ.

0.024 [0.60] 4x 0.020 [0.51]

INCHES DIM. A E L ECN: X10-0386-Rev. B, 06-Sep-10 DWG: 5974 MIN. 0.310 0.300 0.270 MAX. 0.330 0.425 0.290 MIN. 7.87 7.62 6.86

MILLIMETERS MAX. 8.38 10.79 7.36

Note 1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.

Document Number: 91361 Revision: 06-Sep-10

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Legal Disclaimer Notice

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Vishay

Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customers responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customers technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000