Beruflich Dokumente
Kultur Dokumente
a.tasic@tudelft.nl 2006
Design requirement
2.1GHz 400MHz 0.7V -110dBc@1MHz 3V 10mW
Values
BiCMOS 4 50GHz available available
a.tasic@tudelft.nl 2006
Outline
LC Oscillators Oscillation Signal Steady-State Amplitude Interpretation of Noise in Oscillators Linear Phase-Noise Model Spectral Analysis of Phase Noise Noise Suppression of Bias Current Sources LC-Oscillator Design Procedure
a.tasic@tudelft.nl 2006
3
LC Oscillators
a.tasic@tudelft.nl 2006
L, RL UT
CV
gM
Q1 Q2
active pair
I TAIL
QCS
a.tasic@tudelft.nl 2006
-gM GTK C L
oscillation condition
gM GTK gM
1 / LC
gm / 2 C CV / 2
6
oscillation frequency
0
a.tasic@tudelft.nl 2006
LC Tank
C 2R C L RL
GTK
C L
tank conductance
GTK RL ( 0 L) 2 2RC (
0
C)
GTK
1 0 L QL
1 QC
quality factors
QL
0
RL
QC
1 0CV RC
a.tasic@tudelft.nl 2006
7
Sub-Outline
a.tasic@tudelft.nl 2006
Amplitude Stabilization
Amplitude regulator
amplitude control mechanism
Nonlinear amplifier
well defined nonlinearity timing reference loss compensation
ALC
loop-gain control
y(x) y(x)
Resonator
Resonator
10
a.tasic@tudelft.nl 2006
Differential Characteristic
IOUT
I OUT
I0
Q1
VIN
Q2
VIN
-I0
1/f0 1/f0
2I 0
iOUT ( t )
I 0 tanh
x cos t 2
vIN ( t ) V1 cos t
x V1 / VT
V1
VT
a2 n 1 cos 2n 1 t
In( x )
I 0 an ( x )
an ( x )
tanh
x cos 2
cos( n )d
a.tasic@tudelft.nl 2006
11
I1 V1
gm
I 0 VT I1 VT V1 I 0
2g M a1 ( x) x
GM1(x)/gM 1
1 I1 x I0
0.5
GM 1 ( x) / g M
a1 ( x) x
1 10 x
1
1 1 smallsignalloop gain
12
a 2 n 1 cos 2n 1 t
In
4I 0 n
2 I TAIL n
a.tasic@tudelft.nl 2006
13
GM 1 (V1 )
I1 V1
I1 I TAIL
I TAIL V1
2 I TAIL V1
GM 1 (V1 ) gM
1 k
k
2
RTK g M
voltage fundamental
So Far
VCO design parameters
Oscillating frequency Tuning range Voltage swing Phase noise Supply voltage Power consumption
Design requirement
2.1GHz 400MHz 0.7V -110dBc@1MHz 3V 10mW
Technology parameters
Technology Number of metals Transit frequency MIM capacitors Varactors
Values
BiCMOS 4 50GHz available available
a.tasic@tudelft.nl 2006
15
Sub-Outline
Signal Phasor Description Signal Spectral Description Phase-Noise Definition Phase-Noise Specification
a.tasic@tudelft.nl 2006
17
ak known amplitude (
k k
2A)
a.tasic@tudelft.nl 2006
18
a.tasic@tudelft.nl 2006
19
[1 a(t )] cos
(t )
cos
n( t)
a(t ) cos
(t ) sin
(t )
a(t)
v(t)
[1 a(t )] cos
(t )
n( t)
cos
a(t ) cos
(t ) sin
(t )
a(t)
v(t)
a.tasic@tudelft.nl 2006
21
f0
f+f0
= +
PM
a.tasic@tudelft.nl 2006
22
=
AM
+
PM
a.tasic@tudelft.nl 2006
23
t t
(t ) A
k
A cos sin
k
t
k
sin
0
sin
f0 )
(f
f0 )
(f
f0 )
-f0
a.tasic@tudelft.nl 2006
f0
24
L(
)=10log[Pside-band(
0+
)/Pcarrier (
0)]
[dBc/Hz]
a.tasic@tudelft.nl 2006
25
a.tasic@tudelft.nl 2006
26
S/N=SMDS-NxBW
L =N/SBLOCK
BW
L(
f)=SMDS-SBLOCK-10logBW-S/N [dBc/Hz]
a.tasic@tudelft.nl 2006
27
Sub-Outline
Generic Linear Phase-Noise Model
a.tasic@tudelft.nl 2006
29
a.tasic@tudelft.nl 2006
30
) )
2
j 2
L
0
/ 1
2
j 2 0C
2 0 2
1 0 LGTK
0
2 RTK
4G TK Q
4Q
C
31
GTK
a.tasic@tudelft.nl 2006
LC-Tank Noise
4KTGTK
2 TK
Z(
GTK KT ( 0C ) 2
2 0
a.tasic@tudelft.nl 2006
32
GTK KT A 2 ( 0C )
2 0
Phase Noise
total voltage noise spectral density
VN,TOT IN,TOT
2 TOT
2 TK
2 AP
2 TOT
GTK KT F 2 ( 0C )
2 0
L(
L(
1V 2 VS2 / 2
2 FkT PS
KT
1 F 2 Q VS GTK
2
2Q
a.tasic@tudelft.nl 2006
34
L(
2 FkT PS
2Q
inversely proportional to tank quality factor (square) inversely proportional to signal power
a.tasic@tudelft.nl 2006
35
L(
2 FkT PS
2Q
1/ f
a.tasic@tudelft.nl 2006
36
a.tasic@tudelft.nl 2006
37
a.tasic@tudelft.nl 2006
38
Sub-Outline
Duty Cycle of Small-Signal gm-cell Gain Oscillation Condition LC-Tank Noise gm-cell Noise Tail-Current Source Noise (Phase) Noise Factor Bipolar VCO (Phase) Noise Factor CMOS VCO Bipolar vs. CMOS VCO
a.tasic@tudelft.nl 2006
40
Is it Indeed so Simple?
IGT
L CV CV
LC-tank noise
IC
VB
Q1
VB
Q2
IC
IB
IB
transconductor noise
tail-current source noise
Q CS
ICS
qI C
qI B
2 KTg m / 2
2 KTgm / 2
gm,CS 2 ( rB ,CS gm ,CS )2 1
F
2 KT
(
T
)2
a.tasic@tudelft.nl 2006
42
gM
VB
Q1
VB
Q2
1/2f0
Q CS
Q CS
1/f 0
c0
c' 2 k
1 T
T /2
g ' (t )e
T /2
j 2k
0t
dt
c' k SVB ( f
kf0 )
43
a.tasic@tudelft.nl 2006
1.41
Q1 Q2
1
1/2 f0
IB
IB
Q CS
Q CS
g ' ' (t )e
T /2
j 2k
0t
dt
c' 'k S IB ( f
kf0 )
a.tasic@tudelft.nl 2006
44
IC g'''( ) : 2
1
IC
Q1
0
1/2 f0
Q2
IC
Q CS
Q CS
j 2k
0t
dt
kf0 )
a.tasic@tudelft.nl 2006
45
f) f) f) f)
cAP,0
cAP,2 cAP,4
2 f ) c ''2 S IB ( f 0
2 f ) c '''2 S IC ( f 0
f ) c ''2 2 S IB (3 f 0
f ) c '''2 2 S IC (3 f 0
active part noise at odd multiples of the resonant frequency is transformed into the LC-tank noise at the resonant frequency
STK , AP ( f 0 f)
2 c AP ,0
2
k
c AP , 2 k
S AP
...
S AP
S AP ( f 0
f)
S AP (3 f 0
46
f ) ...
a.tasic@tudelft.nl 2006
Q2
VIN
1/f0
1/f 0
Q CS
Q CS
ICS
a 2k 1
1 T
T/2
e
T/2
j ( 2 k 1 ) 0t
dt
ak S CS ( f
kf0 )
47
a.tasic@tudelft.nl 2006
STK ,CS ( f 0
ac3
2 a3 S CS (2 f 0
f)
a12 S CS ( f ) a12 S CS (2 f 0
2 f ) a3 S CS (4 f 0
f)
f) f ) ...
2 a5 S CS (4 f 0
2 f ) a5 S CS (6 f 0
tail current noise at even multiples of the resonant frequency is transformed into the LC-tank noise at resonant frequency
STK ,CS ( f 0 f) 2
k
a2 k
2 1
SCS
SCS
SCS (2 f 0
f)
SCS (4 f 0
48
f ) ...
a.tasic@tudelft.nl 2006
Total Noise
total power spectral density across the LC tank
STOT STK STK ,CS STK , AP
Z(
2 TK k
c' 2 k V
2 B k
c' ' 2 k I
2 B k
2 C k
a2 k
2 1
2 CS
Z(
2 TK
IC 2
IB
2 2V GTK
2 B
a.tasic@tudelft.nl 2006
49
a.tasic@tudelft.nl 2006
50
So Far
VCO design parameters
Oscillating frequency Tuning range Voltage swing Phase noise Supply voltage Power consumption
Design requirement
2.1GHz 400MHz 0.7V -110dBc@1MHz 3V 10mW
Technology parameters
Technology Number of metals Transit frequency MIM capacitors Varactors
Values
BiCMOS 4 50GHz available available
a.tasic@tudelft.nl 2006
51
a.tasic@tudelft.nl 2006
Outline
Contribution of Tail-Current Source Noise to Phase Noise of LC-Oscillators Techniques for Reduction of Tail-Current Source Noise Analysis of Tail-Current Source Noise Bias Noise Suppression - Design Example
a.tasic@tudelft.nl 2006
LC-tank noise ~ 1
IC
VB
Q1
VB
CB CA CB CA Q2
IC
IB
IB
Q CS
ICS
VCO Phase-Noise
noise power(LC - tank,- gm cell, current source) PN = signal power (~k2)
TCS noise >> LC-tank noise + gm-cell noise VCO noise power ~ 1 or ck2 phase noise ~ 1/k2 or const TCS noise suppression with RID
VCO noise power ~ 1 or ck
inductive degeneration
ITAIL
filtering?
ITAIL V IN
+ R D
CD
LD
integration
VIN
C LRID
transconductance gain small at resonance series resonance common-base like configuration (gain of 1) parallel resonance emitter open at resonance (IC floats)
a.tasic@tudelft.nl 2006
59
IB
I C
I OUT
60
(f)
T
LRID
1 j LRID 1/ j C
gm
f gm ( ) fT
series resonance
1 1/ j LRID f 2 1 rB g m ( ) fT
1 1/ j LRID 1 f 2 1 rB g m ( ) fT
C rB LRID
j C
gm
parallel resonance
I OUT IC (f) 1 gm C rB LRID 0 j C
a.tasic@tudelft.nl 2006
parallel resonance 61
2 CS , RID
gm fT 2 1 4kT 0 ( ) 2 2 f0 F
2rB gm
2 f0 fT
2rB g m
2 CS , RID
2 CS
2 f0 fT
62
5.7GHzband VCO
buffer
RID
LC-tank
-gm -cell
buffer
63
to ground
to ground
to TCS transistors
to ground
TCS noise into phase noise: w/ RID 9%, w/o RID 77% 64
a.tasic@tudelft.nl 2006
RID Conclusions
resonant-inductive degeneration for a 4-fold phase noise improvement of a 5.7GHz VCO no voltage headroom required small inductance for resonance at 2f0 cost-effective implementation in multi-layer technologies manifold oscillator phase-noise improvement
a.tasic@tudelft.nl 2006
66
Sub-Outline
VCO Specifications LC-Tank Design How to Choose LC-Tank Inductance How to Choose LC-Tank Varactor Active-Part Design
a.tasic@tudelft.nl 2006
68
UMTS VCO
VCO design parameters
Oscillating frequency Tuning range Voltage swing Phase noise Supply voltage Power consumption
Design requirement
2.1GHz 400MHz 0.7V -110dBc@1MHz 3V 10mW
Technology parameters
Technology Number of metals Transit frequency MIM capacitors Varactors
Values
BiCMOS 4 50GHz available available
WCDMA Specs
Receiving Band (GHz) Channel Spacing (MHz) Multiplex / Modulation MDSeff (dBm) SNR (dB) / BER Processing Gain (dB) Tx-Rx Isolation (dB) Blocker @ 8MHz (dB)
L (8MHz)=-99-(-46)-10log(3.84e6)-7=-129dBc/Hz
a.tasic@tudelft.nl 2006
69
QL=20
RTK
1
0
L, RL UT
LC
resonating LC tank
CV
CV / 2
Q1
gm / 2
Q2
active part
I TAIL
IC
QCS
IT 2
QCS
a.tasic@tudelft.nl 2006
71
LC Tank Design
oscillation frequency
f0 1 2 LC
C CV / 2
determine L and C
tuning range
f MAX f MIN CV ,MAX CV ,MIN C PAR 2 CV ,MIN C 1 2 PAR CV ,MIN
2
CV ,MAX CV ,MIN
f MAX f MIN
f MAX f MIN
a.tasic@tudelft.nl 2006
72
How to Choose L?
tank conductance
GTK 1 1 0 L QL 1 QC
phase noise
L( )
KT RL 2 RC VS2
2
choice of L
larger L => larger QL
larger L => lower GTK
larger L => lower power consumption larger L => lower fRES, fQ-PEAK larger L => lower tuning range
How to Choose C?
tank conductance
GTK RL ( 0 L )2 2 RC (
0
phase noise
2
C)
L(
KT
RL
2 RC VS2
choice of C
larger C => lower Q larger C => larger GTK larger C => lower RC larger C => slightly better
RL ( 0 L )2
2 RC (
C )2
the best LC tank chosen determines power consumption and accordingly active devices operating current
shot noise is directly determined by operating current, i.e., LC tank the larger the transistor the lower the base resistance thermal noise (but more parasitics) choose for as large transistors as possible having
enough fT (~10f0) for the determined collector current
a.tasic@tudelft.nl 2006
76
I CS, RID
V B,CS
QCS
IB,CS
IC,CS
ZD
77
So Far
VCO design parameters
Oscillating frequency Tuning range Voltage swing Phase noise Supply voltage Power consumption
Design requirement
2.1GHz 400MHz 0.7V -110dBc@1MHz 3V 10mW
Technology parameters
Technology Number of metals Transit frequency MIM capacitors Varactors
Values
BiCMOS 4 50GHz available available
a.tasic@tudelft.nl 2006
78
Post-Design Flow
Oscillator Design Layout Oscillator Chip Packaging Printed Circuit Board Design
Measurement Setup
Interpretation of Results
a.tasic@tudelft.nl 2006
80
LRID
-gM C L
LRID
a.tasic@tudelft.nl 2006
81
Packaged VCO IC
VCO chip bondwire
bondpad
a.tasic@tudelft.nl 2006
82
SMD resistor
VCO IC package
bias choke
a.tasic@tudelft.nl 2006
83
Measurement Fixture
I/O connectors transformer bias filtering
VCO IC
bias filtering
package
PCB
a.tasic@tudelft.nl 2006
84
Measurement System
VCC +
+
VCC-XF
Spectrum analyzer
LO
test fixture
IBUFFER
a.tasic@tudelft.nl 2006
85
a.tasic@tudelft.nl 2006
86
signal power
signal frequency
a.tasic@tudelft.nl 2006
87
2,5 2,4
Oscillating frequency [GHz]
VCC=3V
2,5
a.tasic@tudelft.nl 2006
88
PN(1MHz)=-110dBc@3mW
a.tasic@tudelft.nl 2006
89
VCO design parameters Central frequency Tuning range Voltage swing Phase noise Supply voltage Power consumption
a.tasic@tudelft.nl 2006
90
a.tasic@tudelft.nl 2006
91
Conclusions
a.tasic@tudelft.nl 2006
92
So far
LC Oscillators Oscillation Signal Steady-State Amplitude Interpretation of Noise in Oscillators Linear Phase-Noise Model Spectral Analysis of Phase Noise Noise Suppression of Bias Current Source LC-Oscillator Design Procedure
a.tasic@tudelft.nl 2006
93