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Q
Q
Bipolar transistor
General form Examples Model form
Q<name> < collector node> <base node> <emitter node> + [substrate node] <model name> [area value] Q1 14 2 13 PNPNOM Q13 15 3 0 1 NPNSTRONG 1.5 Q7 VC 5 12 [SUB] LATPNP .MODEL <model name> NPN [model parameters] .MODEL <model name> PNP [model parameters] .MODEL <model name> LPNP [model parameters]
Description
The bipolar transistor is modeled as an intrinsic transistor using ohmic resistances in series with the collector (RC/area), with the base (value varies with current, see Bipolar transistor equations), and with the emitter (RE/area). Collector
Qw Qo Cjc Base Rb Cje Ibc2 Ibe2 Ibe1/BF Substrate (LPNP only) (Ibe - Ibc1)/Kqb RE Emitter Ibc1/BR Iepi (if RCO > 0) Cjs Substrate (LPNP only)
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Analog devices
Q
For model parameters with alternate names, such as VAF and VA (the alternate name is shown by using parentheses), either name can be used. For model types NPN and PNP, the isolation junction capacitance is connected between the intrinsic-collector and substrate nodes. This is the same as in SPICE2, or SPICE3, and works well for vertical IC transistor structures. For lateral IC transistor structures there is a third model, LPNP, where the isolation junction capacitance is connected between the intrinsic-base and substrate nodes.
Capture parts
The following table lists the set of bipolar transistor breakout parts designed for customizing model parameters for simulation. These are useful for setting up Monte Carlo and worst-case analyses with device and/or lot tolerances specified for individual model parameters.
Part name
QBREAKL QBREAKN QBREAKN3 QBREAKN4 QBREAKP QBREAKP3 QBREAKP4
Model type
LPNP NPN
Property
AREA MODEL AREA MODEL AREA MODEL
Property description
area scaling factor LNP model name area scaling factor NPN model name area scaling factor PNP model name
PNP
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Analog devices
Description
flicker noise exponent ideal maximum forward beta ideal maximum reverse beta base-collector zero-bias p-n capacitance base-emitter zero-bias p-n capacitance substrate zero-bias p-n capacitance quasi-saturation temperature coefficient for hole mobility quasi-saturation temperature coefficient for scattering-limited hole carrier velocity bandgap voltage (barrier height) forward-bias depletion capacitor coefficient epitaxial region doping factor corner for forward-beta high-current roll-off corner for reverse-beta high-current roll-off current at which Rb falls halfway to transport saturation current base-collector leakage saturation current base-emitter leakage saturation current substrate p-n saturation current transit time dependency on Ic flicker noise coefficient base-collector p-n grading factor base-emitter p-n grading factor substrate p-n grading factor base-collector leakage emission coefficient base-emitter leakage emission coefficient forward current emission coefficient high-current roll-off coefficient reverse current emission coefficient
Units
Default
1.0 100.0 1.0
0.0 0.0 0.0 2.42 NPN 2.20 PNP 0.87 NPN 0.52 PNP
EG FC GAMMA IKF (IK) IKR IRB IS ISC (C4) ISE (C2) ISS ITF KF MJC (MC) MJE (ME) MJS (MS) NC NE NF NK NR
eV
infinite infinite infinite 1E-16 0.0 0.0 0.0 0.0 0.0 0.33 0.33 0.0 2.0 1.5 1.0 0.5 1.0
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Description
substrate p-n emission coefficient excess phase @ 1/(2TF)Hz epitaxial region charge factor quasi-saturation model flag for temperature dependence if QUASIMOD = 0, then no GAMMA, RCO, VO temperature dependence if QUASIMOD = 1, then include GAMMA, RCO, VO temperature dependence zero-bias (maximum) base resistance minimum base resistance collector ohmic resistance epitaxial region resistance emitter ohmic resistance ideal forward transit time ideal reverse transit time RB temperature coefficient (linear) RB temperature coefficient (quadratic) RC temperature coefficient (linear) RC temperature coefficient (quadratic) RE temperature coefficient (linear) RE temperature coefficient (quadratic) RBM temperature coefficient (linear) RBM temperature coefficient (quadratic) absolute temperature measured temperature relative to current temperature relative to AKO model temperature forward Early voltage reverse Early voltage quasi-saturation extrapolated bandgap voltage at 0 K base-collector built-in potential base-emitter built-in potential
Units
Default
1.0
degree coulomb
0.0 0.0 0
RB RBM RC RCO RE TF TR TRB1 TRB2 TRC1 TRC2 TRE1 TRE2 TRM1 TRM2 T_ABS T_MEASURED T_REL_GLOBAL T_REL_LOCAL VAF (VA) VAR (VB) VG VJC (PC) VJE (PE)
ohm ohm ohm ohm ohm sec sec C-1 C-2 C-1 C-2 C-1 C-2 C-1 C-2 C C C C volt volt V volt volt
0.0
RB
0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0
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Description
substrate p-n built-in potential carrier mobility knee voltage transit time dependency on Vbc fraction of CJC connected internally to Rb fraction of CJC connected internally to Rb fraction of CJS connected internally to Rc forward and reverse beta temperature coefficient transit time bias dependence coefficient IS temperature effect exponent
Units
volt volt volt
Default
0.75 10.0 infinite 1.0 1.0
The parameters ISE (C2) and ISC (C4) can be set to be greater than one. In this case, they are interpreted as multipliers of IS instead of absolute currents: that is, if ISE is greater than one, then it is replaced by ISEIS. Likewise for ISC. If the model parameter RCO is specified, then quasi-saturation effects are included.
Branch
intrinsic base to intrinsic collector extrinsic base to intrinsic collector extrinsic base to extrinsic collector
XCJC
XCJC*CJC (1.0 XCJC)*CJC
XCJC2
XCJC2*CJC
not applicable
(1.0 XCJC2)*CJC
not applicable
When XCJC2 is specified in the range 0 < XCJC2 < 1.0, XCJC is ignored. Also, the extrinsic base to extrinsic collector capacitance (Cbx2) and the gain-bandwidth product (Ft2) are included in the operating point information (in the output listing generated during a Bias Point Detail analysis, .OP (bias point)). For backward compatibility, the parameter XCJC and the associated calculation of Cbx and Ft remain unchanged. Cbx and Ft appears in the output listing only when XCJC is specified. The use of XCJC2 produces more accurate results because Cbx2 (the fraction of CJC associated with the intrinsic collector node) now equals the ratio of the devices emitter area-to-base area. This results in a better correlation between the measured data and the gain bandwidth product (Ft2) calculated by PSpice. which is valid in the range 0 XCJS 1.0, specifies a portion of the CJS capacitance to be between the external substrate and external collector nodes instead of between the external substrate and internal collector nodes. When XJCS is 1, CJS is applied totally between the external substrate and internal collector nodes. When XCJS is 0, CJS is applied totally between the external substrate and external collector codes.
XCJS,
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Analog devices
Vbw = intrinsic base-extrinsic collector voltage (quasi-saturation only) Vbx = extrinsic base-intrinsic collector voltage Vce Vjs = intrinsic collector-intrinsic emitter voltage = (NPN) intrinsic collector-substrate voltage = (PNP) intrinsic substrate-collector voltage = (LPNP) intrinsic base-substrate voltage = kT/q (thermal voltage) = Boltzmanns constant = electron charge = analysis temperature (K)
Vt k q T
Tnom = nominal temperature (set using the TNOM option) Other variables are listed in Bipolar transistor model parameters.
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Analog devices
Case 1
for: IRB = infinite (default value) then: Rb = (RBM + (RB-RBM)/Kqb)/area
Case 2
For: IRB > 0 then: tan ( x ) x - )/area Rb = (RBM + 3(RB-RBM) -----------------------------x ( tan ( x ) ) 2
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Analog devices
base-emitter capacitance
Cbe = base-emitter capacitance = Ctbe + areaCjbe Ctbe = transit time capacitance = tfGbe tf = effective TF = TF(1+XTF(Ibe1/(Ibe1+areaITF))2eVbc/(1.44VTF)) Gbe = DC base-emitter conductance = (dIbe)/(dVb) Ibe = Ibe1 + Ibe2 Cjbe = CJE(1-Vbe/VJE)-MJE IF Vbe < FCVJE
base-collector capacitance
Cbc = base-collector capacitance = Ctbc + areaXCJCCjbc Ctbc = transit time capacitance = TRGbc Gbc = DC base-collector conductance = (dIbc)/(dVbc) Cjbc = CJC(1-Vbc/VJC)-MJC Cjbc = CJC(1-FC)-(1+MJC)(1 FC(1+MJC)+MJCVbc/VJC) IF Vbc < FCVJC IF Vbc > FCVJC
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Analog devices
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Analog devices
= RC(1+TRC1(T-Tnom)+TRC2(T-Tnom)2) = VJET/Tnom - 3Vtln(T/Tnom) - Eg(Tnom)T/Tnom + Eg(T) = VJCT/Tnom - 3Vtln(T/Tnom) - Eg(Tnom)T/Tnom + Eg(T) = VJST/Tnom - 3Vtln(T/Tnom) - Eg(Tnom)T/Tnom + Eg(T) where Eg(T) = silicon bandgap energy = 1.16 - .000702T 2/(T+1108)
The development of the temperature dependencies for the quasi-saturation model parameters GAMMA, RCO, and VO are described in reference [3] on page 214. These temperature dependencies are only used when the model parameter QUASIMOD = 1.0.
= GAMMA(Tnom)(T/Tnom)3exp(-qVG/k(1/T - 1/Tnom))
= RCO(Tnom)(T/Tnom)CN
= VO(Tnom)(T/Tnom)CN - D
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Analog devices
References
For a more information on bipolar transistor models, refer to: [1] Ian Getreu, Modeling the Bipolar Transistor, Tektronix, Inc. part# 062-2841-00. For a generally detailed discussion of the U.C. Berkeley SPICE models, including the bipolar transistor, refer to: [2] P. Antognetti and G. Massobrio, Semiconductor Device Modeling with SPICE, McGraw-Hill, 1988. For a description of the extension for the quasi-saturation effect, refer to: [3] G. M. Kull, L. W. Nagel, S. W. Lee, P. Lloyd, E. J. Prendergast, and H. K. Dirks, A Unified Circuit Model for Bipolar Transistors Including Quasi-Saturation Effects, IEEE Transactions on Electron Devices, ED-32, 1103-1113 (1985).
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