P.

Parameswara Rao
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NPN / PNP Block Diagrams
Bipolar Transistor Construction
Emitter
Emitter
N P N
P N P
Collector
Base
Base
Collector
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+
N P N
Emitter
Base
+
-
FB RB
Bipolar Transistor Biasing (NPN)
Collector
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P N P
Emitter Collector
Base
+
+
-
FB RB
Bipolar Transistor Biasing (PNP)
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BIPOLAR JUNCTION
TRANSISTOR
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BIPOLAR JUNCTION TRANSISTOR
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BIPOLAR JUNCTION TRANSISTOR
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Field Effect Transistors (FETs)
Field Effect Transistor Types
J unction Field Effect Transistors (J FETs) (N and P
Channel)
JFETs are voltage sensitive devices that use voltage
vice current to control output.
Current does not flow through a PN junction; however,
a PN junction is used to control the size of a channel
and to control current flow.
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N Channel JFET
Source Drain
Gate
N
P
P
Channel
P
P P
P
N
Depletion Region
--
-
++
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P Channel JFET
Drain
Gate
P
N
N
Channel
N
N N
N
P
Depletion Region
-- ++
+
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JFET Schematic Symbols
Gate
Gate
Drain Source Source Drain
N - Channel P - Channel
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JFET Characteristic Curve
Ohmic Region
Pinchoff Region
Avalanche Region
V
SD
I
D
0
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JFET Operation Regions
Ohmic Region: As V
SD
increases, Drain Current
(I
D
) increases in a nearly linear manner.
Pinchoff Region: As V
SD
increases, Drain Current
(I
D
) remains constant.
Avalanche Region: As V
SD
increases, Drain
Current (I
D
) increases uncontrollably and control
of the FET is lost.
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JFET Operation
The voltage applied to the gate of a FET is
reverse bias in nature and determines the size of
the channel.
When gate voltage (V
G
) is large enough, the
depletion regions touch and drain current (I
D
) is
cut off (Channel is Pinched Off). This is called the
Pinchoff Voltage.
With Gate Voltage (VG) held constant, as VSD
increases, Drain Current (ID) increases and vice
versa. This assumes that the FET is operating in
the ohmicregion of the characteristic curve.
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JFET Operation
V
G
= 0
V
G
= 1
V
G
= 2
V
SD
I
D
0
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MOSFETs
Metal Oxide Semiconductor Field Effect Transistors
(MOSFETs)
MOSFETs where originally called IGFETs due
to the insulated gate portion of the the FETs
construction.
MOSFET
MOSFET Basic Operation
A field-induced channel to connect two adjacent source and drain
junctions.
Features:
4
th
terminal (substrate or backgate terminal)
MOS-induced channel
Pinchoff near the drain end
Parasitic npn
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Water Analogy: MOSFET
When the source and
drain are level, there is no
flow V
DS
=0
Whatever depth in the
canal can be varied by the
gear and track (V
GS
)
When the drain is lower
than the source, water
flows along the canal
The flow is limited by the
channel capacity,
lowering the drain further
only increases the height
of the waterfall at its
edge
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MOSFET Behavior: Types
Two types of MOS transistors
N-channel MOSFETS (conducting carriers are electrons)
Built on p-type substrates so that reverse biased pn junction isolate the
conducting channel of nearby devices
Positive gate voltages create conducting channel
P-channel MOSFETS (conducting carriers are holes)
Built on n-type substrates
Negative gate voltages create conducting channel
Two modes
Depletion mode: channel is inverted or on, when the gate to
source voltage is zero
Enhancement mode: channel is not inverted or off, when the
gate to source voltage is zero
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Depletion Mode MOSFET
P
Source Gate Drain
Metal Oxide Layer
P
Source Gate Drain
N
N
- - ++ + + --
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Depletion Mode MOSFET
Schematic Symbols
Drain
Gate
Source Drain
Gate
N - Channel
P - Channel
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Depletion Mode MOSFET Curve
I
D
V
G
0
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N Channel MOSFET Operation
N Channel Depletion MOSFET Biasing / Operation
Negative (-) on the Source, Positive (+) on the Drain,
and Negative (-) on the gate.
Negative (-) on the gate will induce positive ions in
channel which creates an area within the channel
where there are no majority current carriers.
(Depletion Region)
The amount of Gate voltage (V
G
) applied will
determine the size of the channel thereby controlling
the amount of current flow through the transistor.
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P Channel MOSFET Operation
P Channel Depletion MOSFET Biasing / Operation
Positive (+) on the Source, Negative (-) on the Drain, and
Positive (+) on the gate.
Positive (+) on the gate will induce negative ions in channel
which creates an area within the channel where there are no
majority current carriers. (Depletion Region)
The amount of Gate voltage (V
G
) applied will determine the
size of the channel thereby controlling the amount of current
flow through the transistor.
N & P Channel Depletion MOSFET Biasing / Operation
Depending on the polarity of the gate voltage (VG) applied,
the depletion mode MOSFET can be made to operate either in
the depletion mode or enhancement mode.
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Enhancement Mode MOSFET
Block Diagrams (N & P Channel)
P
Source Gate Drain
Metal Oxide Layer
Source Gate Drain
N
N
N
P P
- + ++ + - --
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Enhancement Mode MOSFET
Schematic Symbols (N & P Channel)
Drain
Gate
Source
Gate
N - Channel
P - Channel
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Enhancement Mode MOSFET Curve
I
D
V
G
0
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N Channel MOSFET Operation
N Channel Enhancement MOSFET Biasing /
Operation
The Depletion region Creates / Enhances channel
formation.
The amount of Gate voltage (V
G
) applied will
determine the size of the channel thereby controlling
the amount of current flow through the transistor.
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P Channel MOSFET Operation
P Channel Enhancement MOSFET Biasing /
Operation
The Depletion region Creates / Enhances channel
formation.
The amount of Gate voltage (V
G
) applied will
determine the size of the channel thereby controlling
the amount of current flow through the transistor.
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MOSFET Gate Voltage
Effects of Gate Voltage (VG) on Channel formation
P
Source Gate Drain Source Gate Drain
N
N
N
P P
- + ++ + - --
Types of MOSFET
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MOSFET
Gate controlled potential
barrier example
Gate voltage to induce
the channel is the
threshold voltage
Fermi level is flat with
a potential barrier
Positive applied to
gate and negative
charges form at
surface
Channel becomes less
p-type, reducing the
barrier essentially
(For enhancement
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MOSFET
Gate controlled variable
resistor example
Gate increases, more
electrons means more
conductive
Drain current increases
linearly with drain bias
More drain current
flows, more ohmic
voltage drop along the
channel
Threshold is barely
maintained near the
drain end called pinch
off
Saturation region (not
affect by drain bias)
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MOSFET I-V Analysis
Features of the I-V Characteristics:
Linear Region V
GS
large, I
D
varies linearly with V
DS
Channel connects source and drain regions.
MOSFET acts like a gate-controlled resistor.
Inversion layer is continuous, no pinch-off.
Triode Region V
DS
becomes larger, saturating I
DS.
Channel resistance increases.
Saturation Region
V
DS
gets so large that V
DS
> V
GS
Leveling of I
DS
I
DS,sat
Pinch-off region exists at drain.
I
DS
not dependent on V
DS
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CURRENT FLOW IN MOSFETs
Charge in the channel per unit area is
given by
Channel sheet conductance
Where W and L are channel width and
length respectively. For a small V
DS
the
current through the channel is
( )
ox T G n
C V V Q =
( ) L W C V V Q G
ox T G n ch
/ . - = =
( )
DS T G ox
DS ch D
V L W V V C
V G I
- -
= - =
/ .
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CURRENT FLOW IN MOSFETs
For slightly higher values of drain voltage
there is a voltage drop along the channel and
the gate to channel voltage varies from place
to place and accordingly the channel
thickness also varies. In this region the
(triode region) expression for the drain
current becomes
The current reaches a peak when the drain
voltage reaches the value of V
GS
-V
T
(VD
SAT
)
when the channel at the drain region gets
pinched off. The drain current remains
constant for all higher voltages of drain.
( ) | |
2 / . /
2
DS DS T G ox D
V V V V L W C I =
( )
2
. /
2
1
T G ox D
V V L W C I =
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MOSFET V_I Characteristics
The gm of the transistor in the linear
region is given by
In the saturation region it is given by
( )
. /
D ox
G
D
m
V L W C
V
I
g =
c
c
=
( )( ). /
T G ox
G
D
m
V V L W C
V
I
g =
c
c
=
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NOTE
All the above information is
collected from online resources
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