AMITY SCHOOL OF ENGINEERING AND TECHNOLOGY (TUTORIAL SHEET) VLSI PROCESSING AND TECHNOLOGY TUTE-1

In IC technology the conducting lines between devices and gates is provided by a) Silicon b) SiO2 c) Polycrystalline Silicon d) None 2. Thermal oxidation of polycrystalline Silicon provides a) Electrical Isolation b) Isolation c) Mechanical Isolation d) Both (a) and (d) 3. At moderate doping levels the electrically active carrier concentration at the surface controls a) Oxidation Rate b) Oxidation Faults c) Both (a) and (b) d) None 4. Oxide thickness on Polysilicon is a) 3100Ao b) 3250Ao c) 2950Ao d) 3500Ao 5. Oxide Thickness on <100> single crystal is approximately a) 3850Ao b) 4000Ao c) 3000Ao d) 3500Ao 6. The ratio of Polysilicon consumed oxidation to oxide growth is about a) 0.44 b) 0.35 c) 0.52 d) 0.49

7. Using CVD undoped polysilicon and lightly doped single crystal silicon, the oxidation rate increased in following order a) <100>,<111>,Polysilicon and <110> b) <111>,<100>,<110> and Polysilicon c) <110>,<111>,<100> and Polysilicon d) <100>,<110>,Polysilicon and <111> 8. Thermal oxidation of Silicon can produce stacking faults lying on a) <100> planes b) <111> planes c) <110> planes d) None 9. The Silicon interstitial super saturation in the silicon determines a) Growth Rate b) Stacking Faults c) Stacking Fault Growth Rate d) None 10. The degraded junction characteristics in the form of increased reverse leakage current and storage time degradation in MOS structures is due to a) Oxidation Rate b) Thermal Oxidation c) Oxidation Induced Stacking Faults d) None

TUTE-2
11. The growth of Oxidation Induced Stacking Faults is a strong function of a) Substrate orientation b) Conductivity Type c) Defect nuclei present d) All the above 12. The stacking fault length is a strong function of a) Oxidation Temperature b) Oxidation Rate c) Both (a) and (b) d) None 13. At comparable temperature and time ,the oxidation stacking fault length is greater for a) Steam Ambients b) Dry Ambients c) Wet Ambients d) None 14. The model in which the oxidation rate is the controlling parameter in oxidation stacking fault length is a) dl/dt = K1[dTox/dt]n - K2 b) dl/dt = K2[dTox/dt]n-K1 c) dl/dt = K1[dTox/dl]n-K2 d) dl/dt = K1[dTox/dt]n + K2 15. For dry oxygen yield linear rate constant for <111> silicon that are an avg. of _____ times those for <100> silicon at corresponding temperature. A. 1.62 B. 0.168 C. 16.8 D. 1.68 16. Geometric effects are called Steric hindrance &which results in higher activation energy. 17. For dry oxidation, oxidation rate v, based on data at 8000c & thickness upto 150A0 is ordered in the following manner A. V111>V110>V100 B. V110>V111>V100 C. V111>V110>V100 D. V110<V110<V100 18. The dielectric is an active component of the storage capacitor in _______

A. RAM B. DRAM C. ROM D. EEPROM 19. Oxidation rate is ________ at lower temperature & reduced pressure. A. Normal B. Higher C. Lower D. Constant 20. Oxides of 40-130A0 (11500, 5 to 10sec) have breakdown field of ____ for 100A0 oxides. A. 13.6 V/cm B. 13.8 mV/cm C. 13.8 V/cm D. 1.36 mV/cm

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21. The enhancement of oxidation rate found to_____ with thickness. A. Increase linearly B. Decay Exponentially C. Decrease non-linearly D. wont change 22. Breakdown field reduced pressure technique A. 12.6 V/cm B. 10-13 V/cm C. 13.8 V/cm D. 1.36 mV/cm 23. Oxides density increase as A. Refractive index (RI) increases B. Refractive index decreases C. Oxidation temperature decreases D. Oxidation temperature increases 24. Common cleaning procedure uses H20-H202-NH4 mixture to remove organic contamination. 25. Pyrogenic technique contains H2 & O2 to form water vapour 26. In higher pressure oxidation, oxidation induced defects are reduced. 27. Plasma oxidation is a low vacuum process .carried out in pure oxygen discharge. 28. In plasma oxidation growth rate increases with increase in temperature. 29. Oxidation of phosphorous doped silicon in wet O2, B is relatively independent of concentration 30. Size of the ultra thin oxides will be A. <20 A0 B. <50 A0 C. <150 A0 D. <120 A0

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31. Ultra thin oxides are produced by ______acid, boiling water and air at room Temperature. A. Sulphuric B. Hot hydrochloric C. Hot nitric D. None of the above 32. Oxidation rate will be lower at A. Low temperature, low pressure B. High temperature and low pressure C. High temperature and high pressure D. None of the above. 33. The size of the oxide thickness grown using reduced pressure technique A) <20 A0 B)200 A0 C)150-180 A0 D)30-140 A0 34. Amount of pressure used in the reduced pressure technique. A) 10torr B) 0.25-2 torr C) 2.5-4 torr D) 6 torr. 35. Kinetics of oxide growth in reduced pressure oxidation is _________ A) Linear B) Parabolic. 36. The size of the oxide thickness grown using high pressure and low temperature Steam oxidation technique is A) 100 A0 B) 200 A0 C)250 A0 D) 300 A0 37. Wet oxidation occurs at a substantially greater rate than for dry oxidation A) True b) False. 38. Higher concentration of sodium ion in the SiO2 enhances the diffusion and concentration of the O2 molecule in the oxide. A) True B) False . 39. Particulate matter in the pre-oxidation cleaning process removed by A. Ultrasonic scrubbing B. Mechanical C. Both A and B D. None of the above. 40. Anodic plasma oxidation can grow oxide thickness of A) 200 A0 B) 800 A0 C) 1000 A0 D) 600 A0

TUTE-5
41. Plasma is produced for plasma oxidation by A. High frequency discharge B. DC electron source C. Both A and B D. None of the above. 42. Growth rate of oxide in plasma oxidation increases with. A. Increase in substrate temperature B. increase in plasma density. C. Substrate dopant concentration D. All the above. 43. In dynamic RAM Quantity of charge stored depends on (in concern with silicon Wafer). A. Thickness of the wafer B. Dielectric material. C. A& B D. None of these 44. The oxidation technique chosen depends on A. Thickness B. Oxide properties C. A and B D. None of the above. 45. What is the order of thickness of the oxide that can be grown by plasma oxidation. A)1m C)2m C)1.5m D) 10 A0 46. What is the growth rate we can obtain by plasma oxidation. A)2.5m/L B) 1m/L C)1.5m/L D) 2 m/L 47. In plasma oxidation the plasma is obtained by A. High frequency discharge. B. Dc electron discharge. C. both a and b. D. none of the above. 48.The growth rate of the oxide typically increases with A. Increasing substrate temperature. B. Increasing plasma density. C. Increasing sustrate dopant concentration. D. All the above. 49. Refractive index of the dry oxide decreases with

A. Increasing temperature. B. decreasing temperature C. Independent of temperature. D. None of the above. 50. RI of the dry oxide gets saturated above. A) 11900C B) 11000C C) 12500C D) 12200C

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51. The etch rate of the thermal oxides at room temperature in buffered HF is generally quoted at about A. 2000A0/min B. 2500A0/min C. 1000A0/min D. 500A0/min 52. The etch rate of thermal oxides at room temperature varies with. A. Temperature B. Etch solution C. Temperature & Etch solution D. None of the above. 53. Oxides used for masking common impurities in conventional device processing are of what thickness. A) 0.5 to 0.7 m B) 1.2 to 1.4 m C)0.8 to 1.0 m D)1.6 to 1.8 m. 54. The values of the diffusion conctants for various dopants in SiO2 depends on A) Concentration B) properties C) structure of SiO2 D) all the above. 55. Among the impurities given below which is having the highest diffusion constants. A) Boron B) gallium C) phosphorous D) arsenic. 56. What is the diffusion constant value of gallium at 11000C A. 5.310-11 B. 9.910-17 C) 3.410-17 to 2.010-17 D) 1.210-17 to 3.510-17 57. The oxide charges are described by its equation A) Q=It B) N=Q/q C) N=Qt D) none 58. interface-trapped charges are thought to result from A. Bond breaking process B. Structural defects C. Metallic impurities D. All the above 59. Thermal oxidation of Silicon can produce stacking faults lying on a) <100> planes b) <111> planes

c) <110> planes d) None 60. The Silicon interstitial super saturation in the silicon determines a) Growth Rate b) Stacking Faults c) Stacking Fault Growth Rate d) None 61. The degraded junction characteristics in the form of increased reverse leakage current and storage time degradation in MOS structures is due to a) Oxidation Rate b) Thermal Oxidation c) Oxidation Induced Stacking Faults d) None

TUTE-7
1. For low charge density level, between oxide and the Si --------- oxidation is preferable, A. Plasma B. Thermal C. High pressure D. Vapor 2. For multilevel metallization ________oxidation is used A. Plasma B. Thermal C. High pressure D. Vapor phase 3. Chemical reaction in Thermal oxidation for vapor is A. Si + O2 SiO2 B. Si + H20 SiO2 + H2 C. Si + H2O SiO2 + H2O D. None of above 4. The bond between Si and SiO2 is, A. Atomic bond B. Covalent bond C. Nuclear bond D. None 5. If 40 A is thickness of oxidation layer, amount of Si consumed by SiO2 is, A. 20 A B. 1.77 A C. 12.3 A D. 17.11 A 6. Deal and Groves model is valid for oxide thickness of, A. 300-20,000 A B. 40- 15,000 A C. <50 A D. >50 A 7. When diffusivity is small, the oxidation rate depends on, A. Reaction rate at Si- Sio2 interface B. Supply of diffusing species. C. Both a and b D. None 8. High concentration of sodium influence oxidation rate A. By changing bond structure B. By introducing water vapor C. By creating vacancies at Si-SiO2 interface D. None of above. 9. Halogen species are introduced into the oxidation ambient to A. Improve oxide properties B. Underlying Si properties C. Both A and B D. None

10. Parabolic rate constant ? A. Increases linearly with HCl B. Increases exponentially with HCl C. Decrease linearly D. Doesnt depend on HCl

TUTE-8
11. the density Qit is expressedin terms of A. number/cm2 B. number/cm.ev C. number/cm2 .ev D. number/ev 12. which technique is used to determine the Qit A. capacitance-voltage technique B. conductance-voltage technique C. both A and B D. current-voltage technique. 70.the fixed oxide charge Qf is located in what thickness of Si-SiO2 interface A. 50 A B. 80 A C. 30 A D. 100 A 71.Qf density ranges from 1010 A. 1014/cm2 B. 1012 /cm2 C. 1015 /cm2 D. 1016/cm2 72.in which of these orientation Qf is more A. <100> B. <111> C. <110> D. None 73.ratio of equilibrium concentration of impurity in Si to that in Sio2 at the interface is called the A. Equilibrium difference co efficient B. Equilibrium segregation co efficient C. Non Equilibrium segregation co efficient D. Non Equilibrium difference co efficient 74.direct determination of the segregation co efficient is possible using A. Primary ion mass spectrometry B. Several ion mass spectrometry C. Secondary ion mass spectrometry D. None of the above 75.seggregation coefficient value for orientation <100>

A. Smaller than <111> orientation B. Equal to <111> arientation C. Greater than <111> orientation. D. Unpredictable. 76.seggregation coefficient are generally in the range A. 0.1 to 0.5 B. 0.2 to 0.6 C. 0.1 to 2.0 D. None 77.seggragation coefficient for gallium is A. 10 B. 20 C. 30 D. 40 78. Oxide stress is due to the A. different pressures acting on the si and sio2 B. different temperatures of si and sio2 C. differences in thermal expansion for si and sio2 D. due to mechanical forces 79. Stress on the oxide is of A. compressive form (Y) B. expansible form C. null, due to equilibrium D. none of the above 80. As oxidation proceeds, the si-sio2 interface , A. advances into sio2 B. advances into si C. remains stationary D. depends on temperature and pressure

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81. Larger segregation coefficients values are obtained A. for near dry oxidations B. for wet oxidations C. when special drying precautions are taken D. none of the above 82. The equilibrium segregation coefficient is the ratio of equilibrium concentration of impurity in __________ to that in _________ at the interface A. si, sio2 (Y) B. sio2, si C. si, oxidizing species D. oxidizing species , sio2 83. The segregation coefficient increases with A. decrease in temperature B. increase in temperature (Y) C. independent of temperature D. none of the above 84. The segregation coefficient is A. Orientation independent B. Orientation dependent with values for <111> orientation greater then <100> orientation. C. Orientation dependent with values for <100> orientation greater than <111> orientation. (Y) D. Only temperature dependent. 85. Tick the correct statements: A. Larger segregation coefficients values ate obtained for wet oxidation B. For phosphorus, Arsenic, and antimony, dopant segregates into silicon (TRUE) C. Near dry oxidation and wet oxidation give virtually identical segregation coefficients. (TRUE) D. Gallium diffuses rapidly in silicon

TUTE-10
1. Explain the concept of Sheet resistance and its importance in layout designing. 2. What is self aligned process in MOSFET fabrication? 3. Explain the problem of Latch-Up in CMOS circuits, what fabrication steps need to be followed to avoid this? 4. Why the input impedance of CMOS gate is so high an are the problems with this? 5. What is Bi-CMOS process? Explain its advantages. 6. Explain the difference between RIE and Ion-Beam etching. 7. Explain the Sputtering process? What is its role in thin film technology? 8. What are Guard rings and why are they required? 9. Explain the following: a. Bonding Pads b. Packaging c. Photo resist 10. Explain the Ficks law of diffusion.