Band theory of Ferromagnetism

As Fe-atoms approach to form a solid, 3d and 4s orbitals overlap. Paulis principle applies to all of them N overlapping l i atoms must lead l d to splitting of 1 E-level into Nlevels---energy gy band formation 1 mg Fe has 1019 atoms each energy level in isolated atom must split into 1019 levels Density of levels in band N(E) No. of levels in dE = N(E)dE; Average E-separation = 1/N(E) More splitting in 4s-levels
Fig 8.22

Ref.: to Magnetic Materials B D Cullity From Introduction Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

Band theory of Ferromagnetism

As there are 5 3d-levels per atom with a capacity of 10 electrons, DOS of d-level is higher The Th extent to which hi h these h levels l l are occupied (dotted line) would depend on number of ( (3d+4s) ) electrons in atom

Ni atom has 8d and 2s e-s Results: 9.4 d e-s, 0.6 s e-s

Ref.: Introduction to M Magnetic i M Materials i l B D Cullity

10 atoms case (1 e- per atom)

Exchange forces cause spin unbalance =net moment/atom From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

Fig 8.22

Ferromagnetism
Water-in-a-tank analogy EXCHANGE force is like a DAM holding water levels to different height across it This requires raising of one or more electrons to higher E. (these levels must t not t be b widely id l spaced, else exchange (a) The split d-band. (b) The s-band is not affected. The arrows in the bands are spin p magnetic g moments. forces will not be able to cause electron transfer) LOW N(E) of s-band implies widely spaced levels therein 4s 4 electrons l are assumed d to make k no contributions ib i to spini Fig 8.22 unbalance in 3d-elements
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

 Maximum imbalance when one half-band is full of 5 electrons

n = number of ( 3d + 4 s) electrons x = number of 4 s electrons n-x = number of 3d electrons e - s/atom e - s/atom e - s/atom

At saturation, 5 d-electrons have spin UP & [(n x) 5] have spin DN The magnetic moment per atom is therefore,

H = [5 {(n x) 5}] = [10 (n x)]

Max spin unbalance is proportional to number of unfilled e-states in d-band

Ni: Observed H=0.6. Using this and n=10 (83d+24s) x=0.60

H = (10.6 n)

Fig 8.22
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

CRIETRIA FOR EXISTANCE OF FRROMAGNETISM

The electrons responsible for FM must lie in partially filled bands in order that there are vacant levels in which electrons with unpaired spins can move in The DOS in the bands must be high, so that the increase in energy caused by spin alignment will be small The atoms must be the right distance apart so that the g forces can enable the d-electron spins p in one atom exchange to align the spins in neighboring atoms

Fig 8.22
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

TC = 770C TRT = 0.29 TC

At RT, , MsatMsat( (0) )

Partial alignment

Complete alignment

Complete p randomness

For Fe, Eex kTC 90 meV e =kT Normalized saturated magnetization (for Fe) vs. reduced t temperature t T/TC where h TC is i the th Curie C i t temperature t (770C)) (770C)).
Fig 8.22
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

 For Fe, Eex=kTC 90 meV Maximum alignment of atomic Magnets Saturation Magnetization, (Msat) Lattice vibrations OR Thermal Energy (or kT) DISORIENT the atomic g magnets
Fig 8.22
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

Magnetic Domains in a single Xtal

Magnetostatic Energy density = B2/20r

B2 20

Domain/Bloch wall

M = 0

When cooled from above TC

(a) Magnetized bar of ferromagnet with only one domain and hence an external B (b) Formation of 2 domains with opposite M reduces the external B. There are, however field lines at the ends. however, ends (c) Domains of closure fitting at the ends eliminates the external fields at the ends. (d) A speciment with several domains and closure domains. There is no external B and the specimen p appears pp un-magnetized. g
Fig 8.22
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

Magnetization along EASY direction along which spin

alignments are easiest (exchange Interaction is strongest/maximum)

H=0
(a) An unmagnetized crystal of iron in the absence of an applied magnetic field. Domains A and B are the same size and have opposite magnetizations magnetizations. (b) When an external field is applied the domain wall migrates into domain B which enlarges A and B. The result is that the specimen now acquires net magnetization.

M grows by b MOTION of f DOMAIN WALL

Fig 8.23
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

Magnetization growth (2-domain model) as H is increased starting from H=0 to H=Hsat

Movement of domainwall

2d domains i

Single g domain

Domain rotation

Fig 8.23
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

Magnetization along EASY direction along

which hi h spin i alignments li t are easiest (exchange Interaction is strongest/maximum) Hsat along [100] ~40 Oe Hsat along [111] ~400 Oe
Along [111] M grows by OP : domain wall movement PQ : d domain i rotation t ti Magnetocrystalline anisotropy in a single iron crystal. M vs. H depends on the y on the crystal y direction and is easiest along g[ [100] ] and hardest along g[ [111] ] crystal
Fig 8.24
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

Table 8.4 : Exchange interaction, magnetocrystalline anisotropy energy K, and saturation magnetostriction coefficient sat
Material Crystal Eex kTC Easy (meV) Hard K (mJ cm3) sat ( 106 )

Fe Co

BCC HCP

90 120

<100>; cube edge // to c axis

<111>; cube diagonal to c axis

0 : <100> 48: <111> 0: // to c axis 450: to c axis 0:<111> 5:<100>

20 [100] 20 [111]

Ni

FCC

50

<111>; cube diagonal

<100>; cube edge

46 [100] 24 [111]

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)