NUMERICALS ON SEMICONDUCTORS AND HALL EFFECT 1. Using the Avogadro number (a) determine the concentration of atoms in Ge (A = 72.

6) of density 5.32 g/cm3. (b) Find the resistivity of intrinsic Ge at 300 K assuming n i = 2.5 x 1013 /cm3, n =3800 cm2/Vs and p = 1800 cm2/Vs. (c) If P is added to an extent of 1 atom in 108, find the resistivity . (d) If Ge were a monovalent metal find the ratio of its conductivity to that of the n-type semiconductor in (b). SOLUTION: (a) n = (6.023 x 1023/72.6) 5.32 = 4.41 x 1022 atoms/cm3 (b) = nie (n + p) = 0.0224 per cm = 1/ = 44.6 cm

(c) Assuming ND = n 4.41 x 1014 /cm3, p = ni2/n = 1.42 x 1012 holes / cm3 and n>>p, nen = (4.41 x 1014)(1.6x10-19) 3800 = 0.268 /cm has increased by a factor of 0.268/.0224 = 11.7 (d) Now n= 4.41 x1022/ cm3 = nen = 2.58 x 107/ cm metal / n-type = 108 2. Calculate the donor density to give n-type Ge of = (1/0.19) / cm, taking n = 3250 cm2/Vs. SOLUTION n = nen; n =n/en = 1.01x1022/m3 3. An n-type Ge has a donor density of 1015 /cm3. It is arranged in a Hall Effect experiments with B = 0.05 T and J = 500 A/m2. VH = ? Assume 3mm sample thickness. SOLUTION Rn = VH / (djB) ; VH = dBj/ (ne) = 0.3 x0.05x 500x10-4/ (1015x 1.6x10-19) = 0.47mV 4. A semiconductor has the dimensions 1 cm x 1mmx 2mm and a resistance of 1.25 along the length, and B = 0.05 T. Find n and n. B A SOLUTION D C

Area ABCD = 2 mm2 = 2x10-2 cm2 J= 0.12/2x10-2 = 6 A/cm2 1/ne = EH / BJ = 1.7 x 10-2 / 0.05x 6 ; n = 1.1 x 10 22 /cm3 n = /ne = (l/AR)(1/ne) = 2.266 cm/Vs 5. If R of a doped sample of Si is 3.66x10-4 m3/c and its resistivity is 0.00893 m, find n and SOLUTION 1/ne = 3.66 x 10-4 m3/C so that n = 2x 10 22 / m3 (R = 3/8ne, more accurately) 1/ = ne; = 1/ne = 0.035 m2/Vs 6. A semiconductor specimen is 1mm thickand 1 cm wide. A field of 0.5 T is applied parallel to the mm edge. EH is measured along the width 10 mA flows along length. RH = 3.66x 10-4 m3 /C. VH = ? SOLUTION J = 10x10-3 / 0.1 = 103A/m2 VH/d = RBJ; VH = 1.83 mV 7. A specimen of semiconductor has RH = 3.66 x 10-4 m3/C and = 8.93 x 10-3m. In a Hall effect experiment B = 0.5 T. Find the Hall angle. SOLUTION J = Eapplied EH = RBJ =RBEappl EH / Eappl = RB = tan tan = 0.02040 = 1.17398o EH Eappl

8. If a diode reverse saturation current is 10-2 mA, Calculate the forward currents for 0.1, 0.2 and 0.3 V. T = 300 K k = 1.38x10-23 j/K SOLUTION Jf = Jo (eeVf/kT - 1) Vf 0.1V Jf 0.47mA 0.2V 22.75mA 0.3V 1080 mA

9. The unit cell edges of Si and Ge are 5.43 long. Calculate the atomic density of the materials after explaining the crystal lattice. SOLUTION Structure is diamond structure.

It is a special fcc lattice with two atoms for the basis or with four additional atom in the fcc cell along the body diagonals AB, CD, EF, and GH. Each unit cell has 8 atoms / cell. If a3 volume has 8 atoms, unit volume has 8/a3 atoms = atomic density, n. nsi = 4.996 x 1028 /m3 ; nGe = 4.507 x 10 28 /m3. 10. In an intrinsic semiconductor, Eg = 1.2 eV. Its hole mobility is much smaller than the electron mobility and independent of temperature. Determine 600 K /300 K, assuming the carrier concentration to be given by ni = no e-Eg /2kT where no is a constant SOLUTION 600 /300 = n600e / n300e 105 11. Predict the effect on electrical properties of Si at 300 K on doping with In to an extent of 1 in a million (Refer Table below). Determine np, increase in hole concentration, new electron concentration, decrease in electron concentration, and .

Prop Si Ge

Eg eV 1.1 0.7

n 0.135 0.39

p 0.048 0.19

ni 1.5x1016 2.4x1019

i 4.4x10-4 2.18

2.3x106 5.32x106

Atom conc /m3 5x1028 4.41x1028

SOLUTION In is a trivalent, acceptor dopant. ND = 5x1022 /m3 Assuming np = 5 x 1022 /m3, nn = n2i/np = (1.5x1016)2 / 5x1022 = 0.45x1010 /m3 Increase in hole concentration is by a factor: 5x1022 /1.5x1016 = 3.3x106 Increase in electron concentration is by a factor: 5x1022 /1.5x1016 = 3.3x106 = nnen + npep = (4.5x109 x 0.135 + 5x1022 x 0.048 )1.6x10-19 = 384 S/m = 1/ = 2.604x10-3 m.