Mil HDBK 217F

NOTICE
OF CHANGE
k
NOT MEASUREMENT
SENSITIVE
MIL-HDBK-217F
1
e
THIS HANDBOOK IS FOR GUIDANCE ONLY DO NOT CITE THIS DOCUMENT AS A REQUIREMENT
NOTICE 2 28 February 1995
MILITARY HANDBOOK RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT
To all holders of MIL-HDBK-217F 1.
The following pagesofMIL-HDBK-217F New Page($) Front Cover ...

Ml
have been revised and supersede the pagea Med. superseded Page(6) Front Cover ... 11! iv v vi
vii New Page 1-1
. r r
Date
[ 2 December 199I
iv v
vi .,. Vlll 1-1
vii 1
Date 2 December 1991 Reprinted without charme 2 Deoember 1991 I 2 December 1991 I 2 Deoember 1991 I 10 Julv 1992 2 Deoember 1991 12 2 2 I2 12 12 December Deoember Deoember Daoember December Deoember 1991 1991 1991 1991 1991 1991
\
A
L
1
1
4
I 1 ,
1-2 2-1 2-2 2-3 2-4 2-5 2-6

9.7
New Page ~ 21 2-2 2-3 . 2-4 2-5 2-6

New Paae
1 1
r v ,
2-8 53 54 5-5 5-6 5-9 5-1o 5-23 5-24

6-1
I 10 July 1992
2 December 1991
New Page 5-3 5-4 5-5 5-6 5-9 5-1o 5-23 5-24
6-1 ~
2 December
1991
6-2 7-3 7-4 9-1 through 9-3 10-1 through 10-6

11-1 11-2 11-!? ..,
2 December
1991
6-2 7-3 7-4
10 Ju~ 1992 Reprinted without change 2 December 1991 2 IxoWnber 1991 10 Ju& 1992 Reprinted without change 2 Deoember 1991 2Deoember1991 Reprinted without change 2 December 1991 2 Deoember 1991 Reprinted without change
2 December 2 December [ 2 C)ecember I 2 December ! 2 December 2 December 1991 1991 1991 1991 1991 1991 1991 1991
I 4
9-1 through 9-29 10-1 through 10-32

11-1
11-2 11-3 11-4, 11-5
11-4 16
,
d
12-1
1~.p
. . . . . . . . -.
12-1
12-2
2 December
2
December
..
1
MI1-HDBK-217F NOTICE 2
I
r
New Page(s)
Date
Superseded
Page(s) 10 JUIY 1992 I 2 December 2 December 2 December 2 December - ?ecember z Uecember
Date
1991 1991 1991 1991 1991 1991
12-3
12-4 12-5 13-1 13-2 --14-1 through 14-2 14-3
12-3
12-4 12-5 13-1 13-2 ---
15-1 through 15-3 16-1 r 16-2 I #

16-4
14-1 mrougn 144 14-5 15-1 through 15-6 16-1 New Page I
New Page
2 December 1991 2 December 1991 2 December 1991 i 2 December 2 December 2 December ] 2 December
1991 1991, 10 July 1992 1991 1991
17-1
Appendix C-3 A
17-1
A-1 through A-18
1
2.
c-4
c-3 c-4
Retain the pages of this notice and insert before the Table of Contents.
3.
Holders of MIL-HDBK-217F will verify that page changes and additions indicated have been entered. The notice pages will be retained as a check sheet. The issuance, together with appended pages, is a separate publication. Each notice is to be retained by stocking points until the military handbook is revised or canceled. Preparing Activity: Air Force -17
Project No, RELI-0074
Custodians: Army - CR Navy - EC Air Force -17 Review Activities: Army - Ml, AV, ER
Navy - SH, AS, OS
Air Force-11,13,
15, 19,99
Army - AT, ME, GL Navy - CG, MC, YD, TD

Air Force -85
AMSC NIA DISTRIBUTION
STATEMENT
A: Approved
for publlc release; dlstnbutlon
unlimited.
----
=,
I-
r____
I NOT MEASUREMENT SENSITIVE]
MIL-HDBK-217F 2 DECEMBER 1991

SUPERSEDING MIL-HDBK-217E, Notice 1 2 January 1990
MILITARY HANDBOOK
RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT
THIS HANDBOOK IS FOR GUIDANCE ONLY -DO NOT CITE THIS DOCUMENT AS A REQUIREMENT
AMSC NIA DISTRIBUTION STATEMENT Ad Approved for publlc release; drstrlbu!lcn tinllmtted ! FSC-RELI _ . :
MIL-HDBK-217F
DEPARTMENT OF DEFENSE WASHINGTONDC 20301
RELIABILITY
PREDICTION
OF ELECTRONIC
EQUIPMENT
1, This standardization with the assistance 2.
handbook was developed of the military departments,
by the Department of Defense federal agencies, and industry. on reliability periodically to
Every effort has been prediction procedures. ensure its completeness
made to reflect the latest information It is the intent to review this handbook and currency.
3.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Laborato@ERSR, Attm Seymour F. Morris, 525 Brooks 13441-4505, by using the self-addressed Rd., Griffiss AFB, NY Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
II ,.. .-. .- .. -..., -.-- ___ __
..
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al..
-A--
I-*A
-*..A;a-
MIL-HDBK-217F
TA8LE
SECTION 1.1
OF CONTENTS
1.2 1.3
SECTION SECTION 3.1 3.2 3.3 3.4 SECTION SECTION
1: SCOPE Purpose ................... ..... .... .... .. .. ...... ... ... ......... .. .. .... .................. ......... .... ........ ... .... .. Application . ......... ....... ....... ...... .. ... ... ...... ........ ..... .............. ... .... .......... ............ ... .... .. Computerized Reliability Prediction .. .... .. ........ ... ..... ...... ........ .... ....... ....... ........... .... .. 2: REFERENCE DOCUMENTS ..................... ................... ....... ....... ... ..... ... ......
1-1 1-1 1-1 2-1
3: INTRODUCTION Reliability Engineering ... .... ...... . .... ... ....... ........ .... .. .... ............... .......... ... .... .... .... .... .. The Role of Reliability Prediction ........... ............................................................. .... .. Limitations of Reliability Predictions ....... ....................... ........................... .................
Part Stress Analysis Prediction ................................................................................ 4:

5: RELIABILITY ANALYSIS EVALUATION
q
3-1 3-1 3-2 3-2
. ..... .......................... ................. ..
4-1
5-1 5-3 5-4 5-7 5-8 5-9 5-1o 5-11 513 5-14 5-15 5-17 5-18 5-20
5.1
5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 5.10 5.11 5.12 5.13 SECTION 6.0 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 6.10 6.11 6.12 6.13 6,14 6.15
Gate/Logic Arrays and Microprocessors
. .... ... ............ .... .................. ...... .... .... .. INTRODUCTION ......... ................................................... ........ Memories .... .... .... ...... ........ ...... ..........0..... .... ...... .... ........... .................. ...... ..... ........ . VHSIC/VHSIC Like ................. ..... .... .............. ..... ...... ... .................... ... ....... .... .. .. ...... GaAs MMIC and Digital Devices . .. ... .... ..... ........ .... .... ........... ....... .............. ....... .... .... .. Hybrids ... ... ............. ...... .... ........ ... ... ... ... .... .... .... .... ........... .......... ...... .... ........ .......... SAW Devices ........ ..... ............ ... .. .... ...... ........ ....... .... ..... ............. ..... ...... . ...... .. .. ...... Magnetic Bubble Memories ...... .. ...... ... ... ........ ... .... .... ..... ...... ................ ......... .. ........ XT Table for All ................ .......... ..... .................... .....................0... ........... ...., *.**...... ., MICROCIRCUITS, C2 Table for All .......................................................................................................
XE, ~ and ZQ Tables for All ............. ................................................*.**................0.

q
TJ Determination, TJ Determination,
(All Except Hybrids) ......................*.*... ............................ ...*.....*,.

q q
(For Hybrids) ...................................................................... .*.......

q
Examples ...............................................................................................................
DISCRETE SEMICONDUCTORS Discrete Semiconductors, Introduction ... . ....... ... .. .. ......... ...... ................... ....00..... ... .. Diodes, Low Frequency ..... ..... .. .. ... .. .... ... ... ..... .... .. ............ ........... ...... .... ....... ........., Diodes, High Frequency (Microwave, RF) . ....... ..... .... ...... ..................... ... .... .... .... .... .. Transistors, Low Frequency, Bipolar ..... ... .... .... .... .. ....... ..... ..................... ....... .... . ..... Transistors, Low Frequency, Si FET ...... ........ ....... ...................0................................ Transistors, Unijunction ........... .. ............ ................ ................................. ....... .... ...... Transistors, Low Noise, High Frequency, Bipolar ........... ... O.*......**.*.. ....... ......... .... ... . Transistors, High Power, High Frequency, Bipolar .......0..... ....................... ................. Transistors, High Frequmcy, GaAs FET .. .... ..... .
q
6:
. . . . . . . ...0.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transistors, High Frequency, Si FET .......................... Thyristors and SCRS .....................**.........................

q
. . . . . . . . . . . . . .
. . . . . . . . . . . . . . . .
. . . . . . ...0...
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..*...... ,, ., . 0......,, ,
Optoelectronics, Optoelectronics, TJ Determination
Detectors,
Isolators,
Emitters ... .... ........ .............

q
Optoelectronics, Alphanumeric Displays .........0..................
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Laser Diode ... . ....... ....... ........... .. ......... .................. .... ... ... .... . ........ . ................ ..... ... .... .. ... ... ........ .... .. ..... ....... .............. ... ........... ..........
6-1 6-2 6-4 6-6 6-8 6-9 6-10 6-12 6-14 6-16 6-17 6-19 6-20 6-21 6-23 6-25
Example ...... ........................ .... ..... .... ... ... ....... .. .... ................ .................. . ...... . .........
Ill
...
MIL-HD8K-217F
NOTICE 2
TABLE sECTION 7.1 7.2 7.3 SECTlON 8.0 8.1 8.2 8.3 8.4 sECTION 9.1
OF
CONTENTS TUBEs 7: ................ .......... ............. .. .................. .... ..... All Types Except ?WT and Magnetron Traveling Wave ................................... ............... ......... .................... ........ ................ Magnetron ............ ... ............ .............. ....... ................. .. ....!..... ... ....... ....... ............... LASERs 8: introduction ............ ..... ....... ...... .............. ............... ..... ........ ... .... .. .... ........ ....... ...... . ......... ....... ....... ..... ....... ....... .................. .. .............. ........ ... .... ... Helium and Argon .. ........ ....... .. ........ ............ ...... ... .......... .. .................. ......... .. Carbon Dioxide, Sealed ............ .... ....... ......................................... ...... ....... .......... Carbon Dioxide, Flowing ........ ..... ..................... .... ... ............ .............. ... Solid State, ND:YAG and Ruby Rod RESISToRs 9: Resistors . ... .......... ..... ........ ...... ........ ....... .................... ....... .... .... .. ......o=~. .. ...-....
q
7-1
7-3 7-4 8-1 8-2 8-3 8-4 8-5
9-1
sECTION
10.1
10.2 sECTIO~ 11.1 11.2 11.3 sECTlol 12.1 12.2 12.3 sECTIO 13.1 13.2
CAPACITORS 10: Capacitors ............ .... ... ...... .. ............... ... ...... ................ ......... ....*.... ......0.... ....... .... .. ...... ... ...... ........ ............... ......... ........... ........... ..... . .... ........... . Capacitors, Example INDUCTIVE DEVICES 11: ........ ..... ..... ...... .... .... ....... ....... .............. ..................... ................. ...... . Transformers Colh,.. . . ....... ..... ... .................... ........ ............ .................. .................................. .......... . ... ............. ......... ...... .......... ... ........ .. . Determination of l-lot Spot Temperature ROTATING DEVICES 12: Motors . .. ............. .... ............. ... .... .. ...... ..................... ............*.* ... .. ...... .................
q
10-1 10-6
11-1 11-3 11-4
12-1
....................................................... ......*..... .......... .*.* Synchros and Resolvem ............................................ ...............................$................. Elapsed lime Meters
RELAys Mechanical .. ............. ........ ...... .... ... ..................... ..... ................. ...........0..... ..... ........ .......... ........ ................ ................ ... .......................... ... ... Solid State and Time Delay
12-4 12-5
13:
13-1 13-3
sECTlc )N 14.1 14.2 SECTI( )N 15.1
SWITCHEs 14: Sw[tche . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...*... ....o...~ . . . . . . . . . . . . . . . Circuit Breakers ................. ..... ..... ...........0..,,..,.. . .......... ....... .... ... ...... .......... ... .. CONNECTORS 15: ...... ........ ........ .... ...... ................. ... .......... ..... .... .. ......... .... .. .... Connectors, General . ..... ...... .... ... ...... .............. .............. .......*.... ...*...*** .. *..*.*.*. ..... Connectors, Sockets
14-1 14-2
15-1 15-3
15.2 )
INTERCONNECTION ASSEMBLIES ......... .................. ........ .. ..... sECTl~ ON 16: Interconnection Assemblies with Plated Through Holes ................... ...................... 16. I Interconnection Assemblies, Suflace Mount Technology 16.: ~ SECTI ON 17. 1 SECT! ION 18. 1 SECT ION 19 .1 CONNECTIONS 17: ...... ............ ....... ....... .... ........................ ................. Connections
16-1 16-2
17-1
. . ..0...... . . . . . . . . . . . . . . . . . .
METERS ................................................................. Meters, Panel .................................!...... . 18: QUARTZ CRYSTALS 19: ................................................. Quartz C~sta\s .....................................................
18-1
19-1
Supersedes
page w of Revtslon
Iv
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l-l
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.Tc ,
MIL-HDBK-217F NOTICE 2
TABLE
OF
CONTENTS
SECTION 20.1 SECTION 21.1 SECTION 22.1 SECTION 23.1 APPENDIX APPENDIX APPENDIX
LAMPS 20: Lamps .. . ..... .. .......... .............. ........... .... .... .... ....................... .. ...... ... .... .... ... ............. ELECTRONIC FILTERS 21: Electronic Filters, Non-Tunable ........ ... ........ ......... ................................................... . FUSES 22: Fuses. . .... .. .... ...... ................ ......... .. ... ........ ..... .... ......... .... .... ..... ....... .... .... ............. MISCELLANEOUS PARTS 23: Miscellaneous Parts ............. ... .......... .. ............... .... ........ ..... ....... .... .... .... ... .. ........ .... A: B: C: PARTS COUNT RELIABILITY AND VLSI PREDICTION CMOS . .. .... .. ..... .... ...*.. ... .. ...*... ... ... MODEL) .. ..... .... ...
20-1
21-1
22-1
23-1 A-1 B-1 c-1
VHSIC/VHSICOLIKE BIBLIOGRAPHY
(DETAILED
. .................. ... .... ... ................. ........ ...... .... .... ...... ...............
LIST Table Table Table Table Table 3-1: 3-2: 4-1: 6-1: 6-2:
OF
TABLES 3-3
Parts with Mu)ti-Level Quality Specifications ......................... ............................... Environmental Symbol and Description ........................................*. ....................
Reliability Analysis Checklist ...... ....................................................................... Defautt Case Temperatures for All Environments (C) . ..... ............ ... ..... . ............ ...
Approximate Thermal Resistance for Semicond@or Devices Sk= .......*.*.......**......*...................*...*..*........................... in Various Pa*@
3-4 4-1
6-23 6-24
LIST Figure 5-1: Figure 8-1:
OF
FIGURES 5-18 8-1
Cross Sectional View of a Hybrid with a Single Multi-Layered Substrate .......... .... .. Examples of Active Optical Suffaces . ........... ... ................ ............ ..... ... ....... ..... ...
V Supersedes ,.. . I
racinclucl
page v of Revision
I VLRY I rlmllllulk
F
I IWUIIIICIIIICLIL I
M! L-HDBK-217F
NOTICE 2
FOREWORD 1.0 THIS HANDBOOK NOT BE CITED AS A HAVE TO COMPLY. IS FOR GUIDANCE IF REQUIREMENT. ONLY. IS, THE THIS HANDBOOK SHALL CONTRACTOR DOES NOT
IT
MIL-HDBK-217F, Notice 2 provides the study (see Ref. 37 listed in Appendix C): b
q
following
changes based
upon a recently completed
Revised
resistor
and capacitor
models,
including
new models to address
chip devices.
Updated failure rate models for transformers, connectors, printed circuit boards (with connections. A new model to address surface mounted
coils, motors, relays, and without surface
switches, circuit breakers, mount technology) and
. .
technology solder connections.
A revised Traveling Wave Tube model based upon data supplied by the Electronic Industries Association Microwave Tube Division. This further lowers the calculated failure rates beyond the earlier modifications made in the base document (MIL-HDBK-217F, 2 December 1991). Revised the Fast Recove~ reevaluation of Ref. 28. Power Rectifier base failure rate downward based on a
Notice 2.0 MIL-HDBK-217F, errors in the basic F Revision.
1, (10 July
1992)
was
issued
to correct
minor
typographical
document), (2 December 1991) provided the MIL-tiDBK-217F, (base 3.0 changes based upon recently completed studies (see Ref. 30 and 32 listed in Appendix C): 1. New failure rate prediction models are provided for the following
microcircuits:
q
following
nine major
classes
of
Monolithic Monolithic Monolithic (including Monolithic Monolithic Monolithic Hybrid
Bipolar
Digital and Linear Gate/Logic Gate/Logic
Array Devices Array Devices
MOS Digital and Linear Bipolar and MOS Digital
Microprocessor
Devices
Controllers) Bipolar and MOS Memory Devices GaAs Digital Devices

GaAs MMIC Devices
Microcircuits Bubble Acoustic
Magnetic Surface
Memories Wave Devices
new prediction models for bipolar and MOS The 2 December 1991 revision provided up to 60,000, linear microcircuits with up to 3000 microcircuits with gate counts and co-processors up to 32 bits, transistors, bipolar and MOS digital microprocessor memory devices with up to 1 million bits, GaAs monolithic microwave integrated circuits (MMICS) with up to 1,000 active elements, and GaAs digital ICS with up to 10,000 The C, factors have been extensively revised to reflect new technology transistors. dewces with Improved reliability, and the activation energies representing the temperature sensltwlty of the dice (nT) have been changed for MOS devices and or memories The
Supersedes
wlBaiaKa
Ufi II M1iw ~av~
page VII of Revision
F, NotIce 1
Vll
~ a IVusw
MIL-HDBK-217F
NOTICE 2
FOREWORD
C2 factor remains
unchanged
from the prewous
Handbook
version,
but includes
pin grid
arrays and surface mount packages using the same model as hermetic, solder-sealed dual New values have been included for the quality factor (XQ), the learning in-hne packages. factor (~~), and the environmental! factor (nE). The model for hybrid microcircuits has been revised to be simpler to use, to delete the temperature dependence of the seal and interconnect failure rate contributions, and to provide a method of calculating chip junction temperatures. 2. A new model for Very High Speed Integrated Circuits (VHSIC/VHSiC Large Scale Integration (VLSI) devices (gate counts above 60,000). The reformatting A reduction A revised of the entire handbook to make it easier to use. factors (zE) from 27 to 14. Like) and Very
3. 4. 5. 6.
in the number failure
of environmental
rate model for Network
Resistors. on data supplied by the Electronic
Rewsed models for Industries Association
TWS and Klystrons based Microwave Tube Division.
1.0 SCOPE
- This handbook Is for guidance only and shall not be cited as a Purpose 1.1 requirement. ff it la, the contractor does not have to comply (see Page 1-2). T he purpose of this handbook is to establish and maintain consistent and uniform methods for estimating the inherent reliability (i.e., the reliability of a mature design) of military electronic equipment and systems. It provides a common basis for reliability predictions during acquisition programs for military It also establishes a common basis for comparing and evaluating electronic systems and equipment. The handbook is intended to be used as a tool reliability predictions of related or competitive designs. to increase the reliability of the equipment being designed. 1.2 Appllcatlon - This handbook contains two methods of reliability prediction - Part Stress Analysis in Sections 5 through 23 and Parts Count in Appendix A. These methods vary in degree of information needed to apply them. The Parl Stress Analysis Method requires a greater amount of detailed information and is appl=ble during the later design phase when actual hardware and circuits are being designed. The Parts Count Method requires less information, generally part quantities, quallty level, and the application environment. This method is applicable during the early design phase In general, the Parts Count Method will usually result in a more and during proposal formulation. consewative estimate (i.e., higher failure rate) of system reliability than the Parts Stress Method.
Supersedes
page
1-1
of Revision
1-1
MI L-I-IDBK-217F
NOTICE 2
1.0
SCOPE
COMMANDER,
R-
LABORA~RY (AFMC), AlTN:
RL/ERsR,
lat.
s.
mm= of
SUBJECT:
-li~ili~ Notice 2 to ~-xDBK-217F, Elecwodc lz@gX=t , EOjact REU-0074 to s~ printing

the subject aotico
Redictim
Prior
for be made:
q
Point
ard tistrtitia,
the
to
follas
tha
DoD
additions
Six@O
Stock
nwt
ACrOSS
the
cover
in
BIG
BOLD BLACK LZITERS
- Au
CAM:
bert
EZIS
q
HAZUX)BOOK
XS FOR ~
-Y.
mmrm~s 1.0: M mEs NOT MS
mcunENT~A~ xn the FOREWORD (Page vii of Notice 2 ) , ~agr~h THIS HANDBOOK 1S POR GUIDAN= ONLY. msEANDBoox~~ ~R IFrrxs, m BE CXTZD AS A ~.
HAVE
m
an
COMPLY.
Add
entry for the SCOPE* pua4m@ 1.1 (~e) : handbook is for guibce only and shall not be citd as a the contrmtor &e8 not have to If it ia, requir~t. coa@y .
If YOU have anY uuestim contact Ma. Carla J~ .
r~
thb
reQueat , plea-
Waltez
B.
Be%
, 11
+ Chaiman, Defense Standada Council

cc :
=mrQV--t
OVSD(A&T)~~&E/SE,
Mr. M. Zsak
1-2
s
New Page -. Ma 1 I 1 1
2.0
REFERENCE
DOCUMENTS
This handbook cites some specifications which have been cancelled or which describe devices that are not to be used for new design. This information is necessary because some of these devices are used in so-called off-the-shelf equipment which the Department of Defense purchases. The documents cited in this section are for guidance and information.
SPECIFICATION MIL-C-5 M! L-R-l 1
SECTION #
TITLE
10.1
9.1 9.1
Capacitors, Fixed, Mica Dielectric, General Specification for Resistor, Fixed, Composition (Insulated), General Specification for Resistor, Variable, Wirewound (Low Operating Temperature) General Specification for Capacitor, Fwed, Ceramic Dielectric (Temperature Compensating), Established Reliability and Nonestablished Reliability, General Specification for Resistor, Variable, Wirewound (Power Type), General Specification for
Capacitor, Fixed, Paper-Dielectric, Direct Current (Hermetically Sealed in Metal Cases), General Specification for
MIL-R-19
MIL-C-20
10.1
MIL-R-22 MIL-C-25
9.1 10.1
MIL-R-26 MIL-T-27
9.1 11.1
Resistor, Ftxad, Wirewound (Power Type), General Specif~ation for

Transformer and Inductors (Audio, Power, High Power Pulse), General Specifiition for Capacitor, Fued
MIL-C-62
10.1
Electrolytic (DC, Aluminum, Dry Ekctrotyte, Poladzad), General Specification for
MIL-G81 MIL-C-92 MIL-R-93 MIL-R-94 MIL-V-95 W-L-1 11 W-C-375 W-F- 1726 W-F-1814 MIL-C-3098 MIL-C-3607
10,1 10.1
9.1 9.14 23.1 20.1 14.5 22.1 22.1 9.1 5!1
Capacitor, Variable, Ceramic Dielectric, General Specification for Capacitor, Variable, Air Dielectric (Trimmer), General Specification for Resistor, Fixed, Wirewound (Accurate), General Specification for Resistor, Variable, Composition, General SpecMcation for
Vibrator, Interrupter and Self-Rectifying, General Specification for

Lamp, Incandescent Miniature, Tungsten Filament Circuit Breaker, Molded Case, Branch Circuit and Sewice Fuse, Cartridge, Class H (this covers renewable and nonrenewable) Fuse, Cartridge, High Interrupting Capacity Cqmtal Unit, Quartz, General Specification for Connector, Coaxial, Radio Frequency, Series Pulse, General
Specifications MIL-C-3643 51
for
Connector, Coaxial, Radio Frequency, Series HN and Associated Fittings, General Specification for
Supersedes
page 2-1 of Revision F tiz~
2-1 a u
-- 3..
MIL-HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
MIL-G3650 MIL-C-3655
15.1 15.1
Connector, Coaxial, Radio Frequency, Series LC
Cormector, PIIJg and Receptacle, Electrical (Coaxial Series Twin) and

Associated Fittings, General Specification for
MIL-S-3786
14.3
Swrtch, Rotary (Circuit Selector, Low-Current (Capacity)), General Specification for Switch, Toggle, Environmentally Sealed, General Specification for
MIL-S3950 MIL-G3965
14.1
10.1
15.1
Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte), Tantalum, General Specification for Connector, Electrical, Ckoular Threaded, AN Type, General Specification for Fuse, Current Limiter Type, Akcraft Switches, Toggle, Electrically Held Sealed, General Specification for Relays, Electromagnetic, General Specification for
MIL-C+O15
MIL-F-5372 MIL-S-5594 MIL-R-5757 MIL-R-6106
22.1
14.1 13.1 13.1
Relay, Electromagnetic (Including Established Reliability (ER) Types), General Specification for Lamp, Incandescent, Aircraft Service, General Specification for
ML-L-6363 MIL-S-8805
20.1 14.1, 14.2
Switches and Swttch Assemblies, Sensitive and Push (Snap Action), General Spedkatiin for Switches, Toggle, Positive Break General Specification for Switches, Pressurer Aircraft, General Specification for
MIL-S-8834 MIL-S-8932 MIL-S-9395
14.1 14,1 14,1
Switches, Pressure, (Absolute, Gage, and Differential), General Specification for Switch, Toggle, Momentary Four Position On, Center Off, General Specification for
Meter, Electrical Indicating, Panel Type, Ruggedized, General Specificatmn for Resistor, Fixed Film (High Reliability), General Specification for Capacitor, Fixed, Mka Dielectric, Button Style, General Specification for Capacitor, Fixed, Ceramic Dielectric (General Purpose), General Specification for Capacitor, Fixed, Glass Dielectric, General Specification for
MIL-S-9419
14.1
MIL-M-10304
18.1
MIL-R-10509 MIL-GI0950
9.1 10,1
MIL-C-11OI5
10.1 10.1
MlL-C-l 1272
2-2
Supersedes
page 2-2 of Revision F
2.0
REFERENCE
DOCUMENTS
MlL-C-l 1693
10.1
Capacitor, Feed Through, Radio Interference Reduction AC and DC,

(Hermetkally Sealed in Metal Cases) Estabiishd Reliability, General Specificatbn for and Nonestablished
MlL-R-l 1804 MIL-S-12211 MlL-S-l 2285 MIL-S-12883
9.1 14,1 ?4.1 15.3
Resistor, Fixed, Film (Power Type), General Specificatmn for Switch, Pressure Switches, Thermostatic Sockets and Accessories for Plug-h Electronic Components, General Specification for Capacitor, By-f%ss, Radio - Interference Reduction, Paper Dielectric, AC and DC, (Hermetically Sealed in Metaiiic Cases), General Specificatbn for Resistor, Variabie, Wirewound, Precision, General Specification for Switch, Sensitive: 30 Votts Direct Current Maximum, Waterproof
MIL-G12889
10.1
M!L-R-12934 MIL-S-13484 MIL-C-13516 MIL-S-13623 MIL-R-13718 MIL-S-13735 MIL-G14409
9.1 14.1 14.2 14.1

13.1 14.1 10.1
Circuit Breakers, Manual and Automatic (28 Voits DC) Switches, Rotary: 28 Voit DC Reiays, Electromagnetic Switches, Toggle: 28 24 Volt DC
volt DC
Capacitor, Vadable (Piston Type, Tubuiar Trimmer), General Spectfioatbn for Fuse, instrument, Power and Teiephone Switches, Rotary, Snap Action and DetenVSpring Return Action, General Specification for Coils, Electrical, Fixed and Variable, Radio Frequency, Generai Specification for Couplers, Directional, Generai Specification for Fiiters and Capacitors, Radio Frequency Interference, Generai Specification for Switches,
MIL-F-15160 MIL-S-1S291
22.1 14.1
MIL-C-15305
11.2
MIL-G15370 MIL-F-15733
15.1 21.1
MIL-S-15743 MIL-G18312
14.1 10.1
Rotary, Enclosed
Capacitor, Fixed, Metallized (Paper, Paper Piastic or Piastic Film) Dielectric, Direct Current (Hermetically Sealed in Metal Cases), General
Specification for
MIL-F-18327 21.1
Filter, High Pass, Low Pass, Band Pass, Band Suppression and Dual Functioning, General Specification for
Supersedes
page 2-3 of Revision
2-3
tvllL-HDBK-217F NOTICE 2
2.0
REFERENCE
DOCUMENTS
ML-R-18546
9.1 6.0 13.1 13.1

10.1
Resistor, Fixed, Wkewound (Power Type. Chassis Mounted), General Specification for Semiconductor Device, General Specification for Relays, Control Relay, Time, Delay, Thermal, General Specif~atkmfor Capacitor, Fixed Plastic (or Paper-Plastic) Dielectric (Hermetically SeaJed in Metal, Ceramic or Glass Cases), Established and Nonestablished ReliaMlity, General Specificatbn for Transformer, Puke, Low Power, General Specification for Connedor, Electrical, Printed Wking Board, General Purpose, General Specification for Switches, Lquid Level, General Specification for Ccmnectors, Plug and Receptacle - Electrical Rectangular, Polarized Shell, Miniature Type Resistor, Variable, Nonwirewmnd Specification for Switches, Sensitive Resistor, FMed, Film, Insulated, General Specifioatiin Switches, Code Mcating for In-1ine (Adjustment Types), General
MlL-S-l 9500 MIL-R-19523 MIL-R-19648 MIL-G19978
MIL-T-21038 MIL-G21097
11.1
15.1
MIL-s-212n MIL-G21617
14.1 15.1
MIL-R-22097 MIL-S-22614 MIL-R-22664 MIL-S-2271O
9.1
14.1 9.2 14.4
Wheel (Printed Circuit), (Ttwmbwheel,
and Pushbutton), General Specification for MIL-S-22865 MIL-G22992

14,1 15.1 Switches, Pushbutton, Illuminated, General Specifution for Connectors, Plugs and Receptacles, Electrical, Water-ProOf, Quick HeavyDutyType, General Specification for Di-nnect, Capacitors, Fixed or Specification for
MIL-C23163
10.1
Variable, Vacuum or Gas Dielectric, General
MIL-CX23269
10.1
Capacitor, Fixed, Glass Dielectric, Established Reliability, General Specification for Resistor, Variable, Nonwirewound, General Specificatmn for Fuse, Caflridg8, Instrument Type, General Specification for Resistor, Thermal, (Thermally Sensitive Resistor), Insulated, General Specification for Connector, Plug-Receptacle, Female, 7.5 Amps Connector, Plug-Receptacle, 7.5 Amps Electrical, Hexagonal, 9 Contacts,
MIL-R-23285 MIL-F-23419 MIL-T-23648
9.1 22.1 9.1
MS-24055
15.1
MS-24056
15.1
Electrical, Hexagonal, 9 Contacts, Male,
2-4
Supersedes
2.0
REFERENCE
DOCUMENTS
MIL-C-24308
15.1 14,1
Connectors, Eiectric, Rectangular, Nonerwironmental, Miniature, Polarized Shell, Rack and Panel, General Specdicatbn for Switches, Mu!tistation, Pushbutton (Illuminate General Specification for and hlon-l!luminated),
MIL-S-24317
MIL-C-25516
15.1
Connector, Electrical, Miniature, Coaxial, Environment Resistant Type, General Specification for Connector, Electrical (Wcular, Miniature, Quick Disconnect, Environment Resisting), Receptacles and Plugs, General Specificatbn for Connectors, General Purpose, Electrical, Miniature, Ckcular, Environment Resisting, General Spedficatbn for Resistor, Variable, Wlrewound, Nonprecison, General
MIL-C-26482
15.1
ML- C-26500
15.1
MIL-R-27208
9.1
Specificatmn for
MIL-C-28731
15.1
Connectors, Electrical, Rectangular, Removable Contact, Formed Blade, Fork Type (For Rack and Panel and Other Applicatbns), General Specification for Connector, Plug and Receptacle, Rectangular, Rack and Panel, Solder Type and Crimp Type Contacts, General Specifiiion for Relay, Sold State, General Specification for Connectors, Plug and Receptacle, Electrio Rectangular, High Density, Polarized Center JackScrew, General Specification for, Inactive for New Designs Connector, Electrical, Circular Threaded, High Density, High Shock Shipboard, Class D, General Specification for Microcircuits, General Specification for Sockets, Chip Carrier, Ceramic, General Specification for Hybrid Micmcirdts, Integrated Wcuits SpedficatiOn for General Specification for (Microcircufis) Manufacturing, General
MIL-C28748
15.1
MIL-R-28750 MIL-C-28804
13.2 15.1
MIL-G28840
15.1
MIL-M-3851O MIL-S-385= MIL-H-38534 MIL-I-38535
5.0 15.3 5.0 5.0
MIL-G38999
15.1
Connector, Ekctrical, Circular, Miniature, High Density, Quick Disconnect, (Bayonet, Threaded, and Breech Coupling) Environment Resistant, Removable Crimp and Hermetic Solder Contacts, General Specification for
MIL-G39001
10.1
Capacitor, Fixed, Mica-Dielectric, Established Reliability, General Specification for

Resistor, Variable, Wkewound, Semi-Precision, for General Specification
MIL-R-39002
9.1
MIL-C-39003
10.1
Capacitor, Fixed, Electrolytic, (Solid Electrolyte), Tantalum, Established Reliability, General Specification for
Supersedes
2-5
2.0
REFERENCE
DOCUMENTS
MIL-R-39005 9.1
Resistor, Fixad, Wirewound (Accurate), Established Reliability, General Specification for Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte) Tantalum Established Reliability, General Specification for Resistor, Fixed, Wkewound (Power Type), Established Reliability, General Specification for Resistor, Fixed, Composition (Insulated), Established Reliability, General Specification for Resistor, Fixed, WmMVOund (Power Type, Chassis Mounted) Established Reliabiiii, General Specification for Coils, Electrical, FMed, Radio Frequency, Molded, Established Reliability, General Specification for Connector, Coaxial, Radio Frequency, General Specification for Capacitor, Fixed, Ceramic Dielectric (General Purpose), Established Reliability, General Specification for Resistor, Variable, Wlrewound (Lead Screw Actuated), Established ReliatWty, Genera! Specification for Relay, Electromagnetic, for Established Reiiabiiity, General Specification
MIL-G39006
10.1
MIL-R39007
9.1
MIL-R-39008
9.1
MIL-R-39009 MIL-G3901O MIL-C-39012 MILC-39014
9.1 11.2 15.1 10.1
MIL-R-39015
9.1 13.1
MIL-R-39016
MIL-R-39017
9.1
Resistor, Fued, Fiim (Insulated), Established ReiiabNty, General Specif.kdon for Capacitor, Fwed, Ekctrofytic (Aluminum Oxide), Established Reliability and Nonestablished Reliability, General Specification for Circuit Breakers, Magnetic, Low Power, Seaied, Trip-Free, General Specification for Capacitors, Fixed, Metaiiued, Paper-Plastic Film or Piastic Film Dielectric, Direct and Alternating Current (Hermetically Sealed in Metal or Ceramic Cases), Established Reliability, General Specification for Resistor, Variabie, Nonwirewound, Precision, Generai Specification for Resistor, Variable, Nonwirewound (Adjustment Type), Established Rel.&ility, General Specification for Switch, Rotary Connectors, Piugs and Receptacle, Eiectricai Triaxiai, Radio Frequency, Generai Specification for Connectors, Plug and Receptacle, Teiephone, Eiectrcal, Subassembly and Accessories and Contact Assembiy, Electrical, General Specification for Printed Wiring Board, General Specifi~tion Resistor,
FIxd,
MIL-C-39018
10.1
MIL-G39019
14.5 10.1
MIL-C-39022
MIL-R-39023 MIL-R-39035
9.1 9.1
MIL-S-45885 MIL-C-49142
14.1 15.1
MIL-G55074
15.1
MIL-P55110
MIL-R 55182
15.2 91
for
Film, Es!abl(shed Reliability, General Specification for
2-6
Supersedes
MII--HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
MIL-C-55235 MIL-C-55302 MIL-A-55339
15.1 15.1 15.1
Connectors, Coaxial, Radio Frequency, Series TPS Connector, Printed Circuit, Subassembly and Aaessories
Adaptors, Connector, Coaxial, Radio Frequency, (Between Series and Within Series), General Specification for Resistors, Fixed, Film, Chip, Established Reliability, General Specification for Capacitor, Fixed, Electrolytic (Tantalum), Chip, Established Reliability, General Specification for Swhches, Reed, General Specification for Capacitors, Freed, Plastic (or Metallized Plastic) Dielectric, DC or DCAC, In Non-Metal Cases, Established Reliability, General Specification for ) Circuit Breaker, Magnetic, Unsealed, or Panel Seal, Trip-Free, General Specification for Transformer, Intermediate Frequency, Radio Frequency and Discriminator, General Specification for Capacitor, Chip, Multiple Layer, Fixed, Unencapsulated Ceramic Dielectric, Established Reliability, General Specification for
MIL-R-55342
9.1
MIL-C-55365
10.1
MIL-S-55433 MIL-C-55514
14.1 10.1
MIL-G55629
14.5
MILT-55631
11.1
MIL-G55681
10,1 15.1
MIL-G8151
Connedor, Electriil,
Circular, Hgh Densky, Ouick Disconnect, Environment Resisting and Accessories, General Specification for
Switches; Toggle, Hermetically Sealed, General Specification for Connectors, Electrical Rectangular, Crimp Contact
MIL-S-81551 MIL-C-81659 MIL-S-82359 MIL-(X3383
14.1 15.1 14.1 14.5
Switch, Rotary, Variable Resistor Assembly Type Circuit Breaker, Remote Control, Thermal, Trip-Free, General Specification for Resistor Networks, Fixed, Film and Capacitor-Resistor Networks, Ceramic Capacitors and Fixed Film Resistors, General Specification for Capacitors, Freed Metallued Plastii Film Dielectric (DC, AC or DC and AC) Hermetically sealed in Metal or Ceramic Cases, Established Reliabil~, General Specification for Coils, Radio Frequency, Chip, Fixed or Variable, General Specification for Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte), Tantalum Cathode, General Specification for
Switches, Dual In-Line Package (DIP), General Specification for Connector, Electrical, Rectangular, Microminiature, Polarized Shell, General Specification for
MIL-R-83401
9.1
MIL-C-83421
10,1
MIL-C+3446
11.2
MIL-C-83500
10,1
MIL-S-83504 MIL-C-83513
14,1 15.1
New Page
2-7 _-e_-. ---- .. -- --==a===.a .-A. _...._. - .. ___ . ____ ____
MIL-HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
MIL-C-83515
15.1
Connectors, Telecommunication, for
Polarized Shell, General Specification
MIL-R-83516 MIL-C-83517
13.1 15.1
Relays, Reed, Dry, General Specification for Connectors, Coaxial, Radio Frequency for Coaxial, Strip or Microstrp Transmission Line, General Specification for
MIL-R-83520
13.1
Relays, Electromechanical, General Purpose, Non-Hermetically Sealed, Plastic Enclosure (Dust Cover), General Specification for Connectors, Plug and Receptacle, Electrical, Rectangular Muttiple
Insert Type, Rack to Panel, Environment Resisting, 15~C Total Continuous Opemting Temperature, General Specification for
MIL-G83527
15.1
MIL-R-83536
13,1
Relays, Electromagnetic, for
Established Reliability, General Specification
MIL-C-83723
15.1
Connector, Electrical (Circular Environment Resisting), Receptacles and Plugs, General Specification for Relay, Vacuum, General Specification for Relays, Hybrid and Solid State, Time Delay, General Specification for
M!L-R-83725 MIL-R-83726
13.1 13.1, 13.2, 13.3 14.1 15.1
MIL-S-83731
Switch, Toggle, Unsealed and Sealed Toggle, General Specification
for
MIL-G83733
Connector, Electrical, Miniature, Rectangular Type, Rack to Panel,

Envhnment Resistkg, XKYC Total Continuous Operating Temperature, General Specifiiion for
MIL-S-83734
15.3
Sockets, Plug-In Electronic Components, Dual-In-Line (DIPS) and Single-In-Line Packages (SIPS), General Specification for
MIL-M5028
15.1
Connector, Electrical, Rectangular, Individual Contact Sealing, Polarized Center JackScrew, General Specification for
STANDARD MIL-STD-756 MIL-STD-683 MIL-STD-975 MIL-STD-1547

Reliability Modeling and Prediction Test Methods and Procedures for Microelectronics NASA Standard Electrical, Electronic and Electromechanical (EEE) Parts List Electronic Parts, Materials Technical Requirements for and Processes for Space and Launch Vehicles,
MIL-STD-1772
Certification Requirements for Hybrid Microcircuit Facilities and Lines
Copies
functions
of specifications
directed by the contracting officer. Single copies are also available (without charge) upon written request to:
Standardization Oocument Order Desk, 700 Robim AVe , Wilding ~, section D, Ph(ladelphla, PA 19111-5094, (215) 697-2667
and standards required should be obtained from the contracting
by Contracbrs activity or as
in connection
with specific
acquisition
2-8
New Page
MIL-HDBK-217F
NOTICE
5.1
MICROCIRCUITS,
GATE/LOGIC
ARRAYS
AND
MICROPROCESSORS
DESCRIPTION 1. Bipolar Devices, Digital and Linear Gate/Logic Arrays 2. MOS Devices, Digital and Linear Gate/Logic Arrays 3. Field Programmable Logic Array (PLA) and Programmable Array Logic (PAL) 4, Microprocessors kp = (cl fi~ + C2fiE)
~QfiL ailures~l 06
Hours
T I t
Digital and Linear Gate/Logic Array Die Complexity Failure Rate - Cl PLA/PAL Linear Digital No. Gates c, No. Transistof$ No. Gates I c, 100 to 101 to 1,000 1,001 to 3,000 3,001 to 10,000 10,001 to 30,000 30,001 to 60,000
1
c,
.0025 .0050 .010 .020 .040 .080
1 to 101 to 301 to 1,001 to
100 300 1,000 10,000
.010 .020 .040 .060
up to 200 201 to 1,000 1,001 to 5,000
.010
.021 .042
Linear and Digital Gate/Logic Array Die Gomplex~ Failure Rate -Cl v Linear No, Transistor
Digital No. Gates 1 to 100

1,000
c,
c, .010 .020 .040 .060
PLA/PAL No. Gates

up to 500
c,
.00085
.010
.020 .040 .080 .16 .29
1
101 301 1,001
101
to
1,001 to 3,000 3,001 to 10,000 10,001 to 30,000 30,001 to 60,000
to to to to
100 300 1,000 10,000
501 to 1,000 2,001 to 5,000 5,001 to 20,000
.0017 .0034 .0068
NOTE:
For CMOS gate counts above 60,000 use the Vi+ SIC/VHSIC-Like
modei In Section
5.3
E=F== 7
Up to 8 .060
.12 .24 ,14
rocm Die Complexi~ Failure Rate - Cl MO.S c,
All Other Model Parametefs Refer to Parameter 1

XT
Section 5.8 section 5,9 Section 5.10 A
C2 7tE, flQ, XL
Up to 16
Up to 32 L
.28
,56
Supersedes - _=...= ------
page
5-3
of Revision
.
5-3 F All GAQ =*Q AW -w......-.
,-- -----
_____ -_ _ _
baw. - -....-=
--
----
MIL-HDBK-217F
5.2
MICROCIRCUITS,
MEMORIES DESCRIPTION 1. Read Only Memories (ROM) 2. Programmable Read Only Memories (PROM) 3. Ultraviolet Eraseable PROMS (UVEfROM) 4. Flash, MNOS and Floating Gate Electrically Eraseable PROMS (EEPROM). Includes both d floating gate tunnel oxide (FLOTOX) and texture polysilicon type EEPROMS 5. Static Random Access Memories (SRAM) R ~vnamic Random Access Memories (DRAM)
w. _=. .
kp=(C1XT+C2YCE+
Acyc) XQ XL
Failures/l
05 Hours
Die Complex~
PROM,
Failure Rate - Cl MOs

SRAM
Bipolar
(MOS & BiMOS) ROM, PROM
t ,
Memory
Size, B (Bits)
ROM
UVEPROM* EEPROM, mPROM .00085 .0017 .0034 .0068
DRAM
SRAM
up to 16K 16 K< BSWK 64K<BS2%K 256K < B s IM ,
.00065
.0013
.0026 .0052
.0013 .0025 .0050 .010
.0078 .016 .031 .062
.0094 .019 .038 .075
.0052
.011
.021 .042
A2 Faaor for LCYCCalculation + + Fatior for Acyc Calculation

Textur8dFlotoxl Pol?
Total No. Of prograrnmin9

Cycles Over ~EPROM Life, C
L
v
Total
NO. Of
Programming Cycles \OM Life, C OV&%PF

up to 300K
Textured-Poiy
I
A2
1
o
1.1 2.3 Parametem Refer to Section 5.8
100 100< c s 200

Jp to
.00070 .0014
.0034 .0068 .020 .049 .10
.0097
.014 .023 .033 .061 .14 .30
300K c C s 400K 400K < C s 500K A!! Other Model parameter XT
200< CS 500 500<cs1K 1K<CS3K 3K<CS7K 7K<CS15K
15K < C s 20K 20K < C s 30K 30K< C s 100K 100K < C s 200 K 200K < C s 400 K
.14 .20 .68 1.3

2.7 3.4
.30 .30 .30 .30

,30 .30 1
C2 ~E,
k Cyc
~Qt XL
section 5.9
Section 5.10
400K < C s 500 K
(EEPRoMs
only)
Page 5-5
1.
2.
Al= Poly.
6.817 X 10-6 (C) equation
No underlying
for TexturedL ~yc = 0 For a}! other devices
MIL-HDBK-217F
NOTICE 2
5.2 MICROCIRCUITS, MEMORIES
EEPROM
ReadWrite
Cycling Induced Failure Rate - Acyc

?bO Cyc =
All Memo~ Devices Except Flotox and Textured-Poly EEPROMS Flotox and Textured
A*B2
Poly EEPROMS
~[
c=
Al
B, + ~ 1
ECC
Al B4 A2
02
ltQ
Page 5-4 page 5-6 A Apu

02-0
Sectiorl
P* Page 5-4 page 5-6 Page 5-5 pie 5.1o 5-6 Sedion 5.1o
Error Corredmn Code (ECC) 1. No On-Chip ECC
Options:
fi~~~
= 1.0
%CC ECC
~~~c
=1.0 = .72
= .66
~EcC
= .72
2. On-Chip t-tammi~ 3. Two-Needs-One
Code
~EGC = =
Redutiant Cell APP~ti
IW)TES:
1. 2. 3.
See Referen@ 24 for rnodeliWl off~~p schemes at the memq system level.
If EEPROM type is unkmw,
error detectbn and com@bn
assure
Fbtox.
some EEPROM manufadurem have inco~rated Error Coff@ion Code Opt@ns: on+hip error corred~n cimuitfY into their EEPROM devwes. This is represetied by Other manufadurem have taken a redundant cell the on-chip hammin9 code entw. apprOach whiih imrpo~~ an extra storag9 transistor in Ovefy memo~ Cell. Thk is represe~ed by the two-needs~ne redutia~ cell ent~. The Al ancf
4.
factom shown in Section 5.2 wem deveb~d

For EEPROMS
system Iiie of 10,000 operatin9 hours. s~nifiatily longer or shofier expe~ed Iiietimes the Al and ~ factom should be ~ttiplied by: System Lifetime Operating Hours 10,000
used in systems with
based on an assumed
\ I
5-5 Supersedes page 5-5 of Revision F
5.2
MICROCIRCLJITS,
MEMORIES
II
m
4
iii +
$!
8 t?
II
I
n
mt+
z
m
5-6
T
Supersedes
:----V.-d.
-r.,
MIL-HDBK-217F
NOTICE 2
5.5 DESCRIPTION Hybrid Microcircuits
~= Nc kc = = [z Nc kc] (I + .2zE ) YCFnQZL Fail.reN106 Ho.m
MICROCIRCUITS,
HYBRIDS
Number of Each Particular
Component Component
Failure Rate of Each Pafiicular
The general procedure for developing an overall hybrid failure rate is to calculate an individual failure rate for each component type used in the hybrid and then sum them. This summation is then modified to account for the overall hybrid function (XF), screening level (@, a~ matUritY (XL). The hybfid Packa9e failure rate is a function of the active component failure modified by the environmental factor (i.e., (1 + .2 ~E) ). Onw the component types listed in the folbwing ti3bi8 are considered to contribute S@ItiiCWItly to the overall failure rate of most h@rids. All other component types (e.g., resistors, inductors, etc.) are constiered to contribute insignif~ntty to the overall hybrid failure rate, and are assumed to have a failure rate of zero. This simplificationis valid for most hybrids; however, if the hybrid consists of mostly passive cornmments then a failure rate should be calculated for these devices. If factorina in other com~onent . for these calculatbk. = Hybrid Case Temperature aWme ~Q = f, XE1 and TA
type~,
Determination
of kc Make These Assumptions When Determining
Determine kc for These Component Types

Microcircuits
Handbook Section
xc 5 c2=0~zQ=1~ Smion 5.12, ~p = 1, TJ as Determined from = O (for WWC).
Discrete Semiconductors
ZQ = 1, nA = 1, TJ as Determined from Section 6.14, nE = 1.
Capacitors
10
~=lTA
Hybrid Case Temperature,
I?cpl.
NOTE: tf maximum rated stress for a die is unknown, assume the same as for a discretely package die of the same type. If the same die has several ratings based on the discrete packaged type, assume the lowest rating. Power rating used should be based on case temperature for discrete semiconductors.
Circuit Function Factor Circuit Type Digital

Video, 10 MHz< f <1 GHz Mcrowave, f >1 GHz
F ~F
All Other Hybrid Model Parameters I I

~~,
~Q,
1.0
1.2 2.6 5.8 21
~E
Refer to Section 5.10
Linear, f <10 MHz Power
MIL-HDBK-217F
5.6
MICROCIRCUITS,
SAW DEVICES DESCRIPTION Surface Acoustic Wave Devices
Quality Factor - ZQ Screening Level 10 Temperature Cycles (-55C to +125C) with end point ektrkd tests at temperature extremes.
None beyond best commetil
7CQ
Environmental Factor - nE Environment GB % ~E .5 2.0 4.0 4.0 6.0 4.0 5.0 5.0 8.0 8.0 .50 5.0 42 220
.10
1.0
% Ns Nu Alc IF %c
UF
practices.
RW SF MF ML CL
5-1o
MIL-HDBK-217F
NOTICE 2
5.13
MICROCIRCUITS,
EXAMPLES
-iimr imim
No. of Pins
Power Dissipation, pD (W) Area of Chip (in.*)
8 .33 14 .35 .0065 19.4 72
%rFFir
3 .6 .0025 50.3 95
TrFiF
3 .6 .0025 50.3 95
Si Diode 2 .42 .0022 56.3 89
Source Vendor Spec. Sheet Circuit Analysis Equ. 2 Above Equ. 1 Above Equ. 3 Above
.0041 30.8 75
eJ~(%NV)
TJ (%)
2.
Calculate Failure Rates for Each Component:

A) LMI 06 Die, 13 Transistors (from Vendor Spec. Sheet)
Section 5.1 Because C9 = O; XT: %WiOn 5.8; XQ, XL Defau~ to 1.0

, = B)
(.01)(3.8)(1)(1) = .038 Failure#l 06 Flours
LM741 Die, 23 Transistors. Use Same Procedure as Above. $ = cl XT ~Q

XL =
(.01)(3.1)(1)(1) = 031 ailured106

5W (From Vendor ~ec.
oum
VcE~CE() = .6,
c)
Sificon NPN Transistor, Linear Application

~ =
=
Rated
Power=
Sheet),
%~T~AnR%ZQXE
SOCtiOn 6.3; nA,
~Qt
~E
oefau~
to
1.0
(.00074) (3.9)(~ .0)(1 .8)(.29) (1)(1) .0015 Failures/l 06 Hours
D) Silicon PNP Transistor, Same as C. .0015 Failures/l 06 Hours

E)
SiliconGeneral Construction. P = = =
Purpose Diode (Analog), Voltage Stress = 600/, Metallurgically Section 6.1;
Bonded
k) T
% C Q E (.0038)(6.3)(.29)(1)(1)(1)
.0069 Failures/l 06 Hours
ZQJ
XE
Defau~
to
1.0
Supersedes
5-23
MII--HDBK-2I
7F
NOTICE 2
5.13
MICROCIRCUITS,
F)
EXAMPLES
Ceramic Chip Capacitor,

A=
Vottage Stress = 50Y0, for the Hybrid, 1340 pF, 125C Rated Temp. CASE P = = = lb ncv ~Q ~E Section 06 Hours 10.1 1; XQ, ~E Default to 1.0
(.0028)(1.4)(1)(1) .0039 Failures/l
G)
Thick Film Resistors, per instructions in Section 5.5, the contribution of these devices is considered insignificant relative to the overall hybrid failure rate and they may be ignored.
%
~E
[Z NcLc](l
6.0
5.8 1
+.27cE)71F7ypL Section 5.10 Section 5.5 Section 5.10 Section 5.10
= =
=
fiF
ICQ
XL
= =
1 [
(1)(.038)+ (1)(.031)+
(2) (.0015)+
(2)
(.0015) (5,8) (l)(1)
+ (2)(.0069) + (2)(.0039) ](1 + .2(6.0))

=
1.2 Failures/l 06 Hours
5-24
Supersedes
page 5-24 of Rewsion F
MIL-HDBK-217F
6.0
DISCRETE
SEMICONDUCTORS,
INTRODUCTION
The semiconductor transistor, diode and opto-electronic device sections present the failure rates on the basis of device type and construction. An analytical model of the failure rate is also presented for each The various types of discrete semiconductor devices require different failure rate device category. models that vary to some degree. The models apply to single devices unless otherwise noted. For multiple devices in a single package the hybrid model in Section 5.5 shouid be used.
quality levels
The applicable MIL specification for transistors, and optoelectronic (JAN, JANTX, JANTXV) are as defined in MIL-S-19500. The temperature
devices is MlL-S-l
9500.
The
factor (XT) is based On the device Junction temperature
Ju~tiOn
temperature
should be computed based on worse case power (or maximum power dissipation) and the device junction to case thermal resistance. Determination of jmctbn temperatures is expiairwd in Section 6.14. Reference 28 should be consulted for further detailed information on the modeis appearing h!this sect ion.
6-1
6.1
DIODES,
LOW
FREQUENCY
DESCRIPTION Low FrequenCy Diodes: General Purpose Analog, Switching, Fast Recovery, Power Rectifier, Transient Suppreswr, Current Regulator, Voltage Regulator, Voltage Reference
SPECIFICATION fvllL-s-19500
Base Failure Rate - ~ Diode TyDe/Application ,. -. I %
Temperature Factor - ~
(Voltage Ragukto and Curre TJ (~) 25
%T
Vottage Reference,
S!?94!a
TJ
~)
3.9 4.2 4.5
4.8 5.1 5.4 5.7 6.0 6.4 6.7 7.1 7.5 7.9 8.3 8.7
4
General PUIPOW Analog Switching Fast Recovery Power Rectifier

Power Rectifier/Schoflky power Diode Power Rectifier with High Voltage Stacks Transient SuppressorNaristor Current Regulator Vottage Regulator and Voltage Referencx? (Avalanche
.0038
.0010
.025 .0030 .0050/
Junction
1.0
1.1 1.2 1.4
1.5
105
.0013 .0034 .0020
and Zener)
Terrperatum
(General Purrmse Anak Pov TJ (oC) q
Factor
- XT
Switching, nsient Su
Fast RmvwY,
r sor %T
T ~ (C) 105
30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 XT = It= bJ
I
exp
110
115 120 125 130 135 140 145 150 155 160 165 170 175
1.6 1.8
2.0 2.1 2.3 2.5 2.7 3.0 3.2 3.4 3.7
25
1.0
1.2 1.4 1.6 1.9 2.2 2.6
30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
E
exp
3.0 3.4 3.9 4.4 5.0 5.7 6.4 7.2 8.0
110 115 120 125 130 135 140 145 150 155 160 165 170 175
9.0 10 11 12 14 15 16 18 20 21 23 25 28 30 32
((
-1925
1 - TJ + 273
1 298
))
Junction Temperature (C)
I
I
~T =
((
.3091
- TJ ~ 273
1 298 ))
?J =
Juncllon Temperature
(C)
1
6-2
Supersedes
t
7.2
TUBES,
TRAVELING
WAVE
DESCRIPTION Traveling Wave Tubes ~ =
+pE
Failures/l
06 Hours
Base Failure Rate - ~

power ~
Environment \ 14 42 42 42 18 61 61 61 Environment GB
Factor - ZF ~E .5
,1 11 11 11 11 11 12 12 12 13 14 15 17
1 12 12 12 12 12 13 13 13 14 15 16 18
2 13 13 13 13 14 14 14 15 15 16 18 20
Frequency (GHz) 6 8 10 4 16 19 24 29 16 20 24 29 16 20 24 29 16202429U@ 1720242943@ 1720253044U 17212631ti 18 22 26 32 19 23 27 33 20 24 29 35 22 26 32 39 24 29 35 43
10 ;Z 1000
I
r
GF
1.5 7.0 3.0 10 5.0 7.0 6.0 9.0 20 .05 11

33
GM Ns
3000 5000 8000 10000 15000 20000 30000 >40000
~~ 51 56 62
S ~y 75 83 91
NU Alc
IF
Uc
UF
k)
P F = -
11(1.00001)P (1.l)F Rated Power In Watts (Pew, lf pum, .001 s P <40,000 Operating Frequency In GHz, .1 S F S 18
is a band, or two different
Am
SF MF
If the operating freque~ i
values, use the geometdc mean of the end point

frequendes when using table.
ML c, I
500
7-3 Supersedes
-----------*-+-*-
MIL-HDBK-217F
7.3
TUBES,
MAGNETRON DESCRIPTION Magnetrons, Pulsed
and Continuous Wave (CW) 06 Hours
Lp = kb7r7cc7tE
Failures/l
P(MW)
.01 .05 .1 .3
.1 1.4
.5 4.6
1 7.6
5 24
10 41
20 67
110 130
Frequency (GHz) 50 30 40 130 110 91
60
150 210 240 300
70
170 230 270 330
80 190
260 290 370
90 200
280 320 400
100 220
300 350 430
1.9
2.2 2.8
6.3
7.2 9.o
10
12 15
34
39 48
56
~ 80
120
140 180 200
.5 : 5 Pulsed
b = F= P=
3.1 3.5 4.4 4.9
10 11 14 16
17 19 24 26
54 : ~
89 100 130 140
150 170 210 230
150 180 220 2@
180 210 260 290
230 2W 310
280 3= 390
~o 410 @
330 380 470 520
370 420 530 Wo
410 470 580 ~o
440 510 830 700
480 550 ~o 760 -
Magnetrons:
19( F)-73 (P)-20 operating FrequenCy in GHz, .15 F <100 .01 SP<5
CW Magnetrons (Ratad Power < 5 KW):

$-18
outout Power in MW,
LMllization Factor - ZI I
u
Environment Environment
%U .44
Factor - nE ~E 1.0
7 Utilization (Radiate HOUN Filament HoufS) 0.0
GB
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
.50 .55
.61 .66 .72 .78 .83 .89 .94
I
I
GF GM
Ns Nu
2.0
4.0 15 I 47
I
*IC
IF
10
16 12 23 80
*UC
Xu =
R =
0,44 + 0.56R
Radiate HourWFilament Hours
I
I
UF
Construction Construction
Factor - nc 7tc
ri 7
ML
Antfil
- nvv
133
CL
2000
CW(RatWPower.5~
Coaxial Pulsed
1.0
Conventional
Pulsed
1.0
5.4
7-4
9.1
RESISTORS
~T Tabie Resistor Style Specification MiL-R11 39008 Description % .0017 Use Column: 1 1
XS Table Use Column: 2 2
Rc RCR
Resistor, Fixed, Composition (Insulated) Resistor, Fixed, Composition (Insuiated) Est. Rel.
.0017
.0037
.0037 .0037 .0037 .0037 .0037 ,0019 .0024 .0024 .0024
RL RLR
RN (R, C Of N) RM RN RD RZ RB RB R RW RWR RE RER RTH RT RTR RR RA RK RP RJ RJR RV RQ RVC
22684 39017
55182 55342 10509 11804 83401 93 39005 26 39007 18546 39009 23648 27208 39015 12934 19 .39002 22 22097 39035 94 39023 23285
Resistor, Fixed, Film, Insuiated Resistor, Fixed, Film (Insulated), Est. Rei.
Resistor, Fixed, Film, Est*iishd ReiiabMy Reiiabiiity
2
2 2 2 2 WA, XT= 1 1 2 2 2
1
1 1 1 1 1 NIA ns = 1
Resistor, Fued, Fiim, Chip, Estabiisti Resistor, Fixed Film (High Sttitiity) Resistor, Fixed, Film (Power TYW) Resistor Networks, Fixed, Film Resistor, Fixed, Wkewound (Accurate) Resistor, Fixed, Wirewound Resistor, Fixed, Whwound
1
1 2
(/@curate) Est. Rel.

(Power TyTw)
ReL Resistor, Fiied, Wkewound (Power Type) Est. Resistor, I%ed, Whewound (Power TYPS, Ch-k Mounted) Resistor, Freed, Whewound (Power Type, Chassis Mounted) Est. Rel. Thermistor, (Thermally Sensitive Resistor), Insuiated Resistor, Variabie, Wirewound (Lead Screw Activated) Resistor, Variable, Wirewound (Lead Screw Activated), Established Reliability Resistor, Variabie, Wwewound, Precision Resistor, Variable, Temperature)
.0024
.0024 .0024 .0019 .0024 .0024 .0024 .0024 .0024 .0024 .0037 .0037 .0037 .00 37 .00 37
2
2 2
2
2 2
N/A, XT=
1 tlrots=~
1 1 1 1 1 1 1 1 1 1 1
2 2 2 1 1 2 2 2 2 1 1
Wkewound (Low Opwating
Resistor, Variable, Wkewound, Semi-Precision Resistor, Wkewound, Power Type Resistor, Variable, Nonwirewound Resistor, Variable, Nonwirewound Est. Rel. Resistor, Variabie, Composition Resistor, Variable, NonwireWound, Precision Resistor, Variable, Nonwirewound
Supersedes
Section 9.0-9.17
of Revision
9-1
MIL-HDBK-217F
NOTICE 2
9.1
RESISTORS
- Power Factor - Xp ,
Column 2 .95 1.1 1.2 1.3 1.4 1.5 lower Dissipation (Watts)
Temperature Factor - XT
T(C) 20 30 40 50 60 70 80 90 100 110 120 130 140 Column 1 ,88 1.1 1.5 1.8 2.3 2.8 3.4 4.0 4.8 5.6 6.6 7.6 8.7 10
np
.068 .17 .44 .58 .76 .89 1.0 1.3 1.5 1.7 1.9 2.5 3.5 4.6 6.0 1 7.1
.001 .01
.13 .25 .50 .75 1.0 2.0 3.0 4.0 5,0 10 25 50 100
1.6
1.7 1.9 2.0 2.1 2.3 2.4 2.5
= exp
-Ea
.5
1 (
m -=
1
)) 150
8.6 I7x1O
oiumn 1: Ea =.2 olumn 2:
Kp - (Power Dissipation)3g
Ea -.08
= Resistor Case Temperature. Can be approximate~ as ambient component temperature for low power dissipation non-power type resistors. IOTE: XT vaiues shown shdd only be used up to
the temperature rating of the device. For devices with ratings higher than 150C, use the equation to determine nT
9-2
Supersedes
page Section 90-9.17
of Revision F
-..
9.1 Power Stress Factor - nc Power Stress .1

.2 .3 .4 .5 .6 .7 .8
RESISTORS
Environment 2
Factor - n=
Column .79 .88 .99 1.1 1.2 1.4 1.5 1.7 1,9
Column .66
.81 1.0 1.2 1.5 1.0 2.3 2.8
Environment GB GF GM Ns Nu AC IF Uc UF
RW
1,0
4.0 16 12 42
18 23 31 43 63
.9 Column
3.4
1: xs s .71e1 1(S)
SF
.50 37
87 1720
MF Column 2: 7CS= .54e2W(s)
ML S = Actual Power Dissipation Rated Power CL
Quality Established Reliability Styles s R P M Non-Established Reliability Resistors (Most Two-Letter Styles)
ICQ
.03 0.1 0.3 1.0
3.0
Commercial or Unknown Screening Level
10
NOTE: Established reliability styles are failure rate graded (S, R, P, M) based on life testing defined in the applicable military device specification. This category usually applies only
to three-letter styles wilh an R suffix.
Supersedes
Section 9.0-9.17
of Revision
9-3
10.1
CAPACITORS
~p=~nTxcnvx~RfiQ~ EFailures/106
fiT
~C)iJfS
Table Use
nC Table Use
xv Table Use %R 1
;apacitor Style P
Spec. MIL-C25
Description
% .00037
Colurnm
1
Column:
1
Column:
1
Capacitor, Fixed, PaprDielectrk, Direct Current (Hermeti=l~ Sealed in Metal Cases) Capacitor, By-Pass, Radio Interferenm Reductbn, Paper Dieledrb, AC and DC (Hermetial~ sealed in Metallic
12889
.00037
Cases) 11693 Capacitor, Feed through, Radio

Interference Reduction AC and DC (Herm@W~ scald in metal cases), Established and blonestablished Reliabil~
.00037
n, CQR
19978
Capacitor, Fixed Plastic (or Paper-Pl=tk) Dielectric (Hermetial~ sealed in metal, oaramic or glass cases),
.00051
Estabkhd
Reliability
and NonestWishd .00037 1 1 1 1
x-i
18312
@pacitor,
(P~r, Film) Dielectrk% Direct Current

(1-iermetkal& Sealed in Metal
~Ked, Metallizd Papr Plastb or Plastb
Cases)
39022 Capacitor, Fixed, Metallizd Paper, Paper-Pi-tic Fdrn or Plastic Film Dielectric Capachor, Fixed, Plastic (or Metallized Plastic) Diokctrk, Dire@ Current in Non-Metal Cases Capacitor, Fixed Supermetdlud Plastic Film Dkdectrii (DC, AC or DC and AC) Hermetical& Sealed .00051 1 1
55514
.00051
83421
.00051
-i
in Metal Cases, Establish Reliability

CM 5 39001 C8 CY CYR 10950 11272 23269
Capacitom, Fixed, Mka Dielectric

Capacitor, Fixed, Mica Dielectric, Established Reliabilhy Capacitor, Fixed, Mica Dielectric, Button Style Capacitor, Fixed, Glass Dieiectr ic Capacitor, Fixed, Glass Dielectric, Established Reliability
.00076 .00076 .00076 .00076 .00076 i
2 2 2 2 2
1 1 1 1 1
2 2 2 2 2
1 1 1 1 1
10-1 Supersedes
I Ocv
Section
. I
10.1 -10.20
m .
I 1
of Revision
F
ml Iuw> 16
eal
>1
10.1
CAPACITORS 4 n~ Table nc Table Use Column: 1

1
Xv Table use Column: 3

3
Capacitor Style CK
CKR
Spec. MIL-C11015
39014
Description Capacitor, Fixed, Ceramic Dielectric (General Purpose)

Capacitor, Fixed, Ceramic Dielectrk (General Purpose), Establish Reliabiltiy CapaCitor, Fixed, Ceramic Dielectti (Tem~rature Compensating), Establish Relitil~ Nonestablishd
% .00099
.00099
Use Column: 2
2
%R 1
1
cC, CCR
20
.00099 and
55681
Capacitor, Chip, Muttipk Layer, FMed, Ceramk Dieled~c, Established Reiiabil~ Capacfior, Fixed, Electro~ic (Solid Electrolyte), Tantalum, Established Reliability Capacitor, Fixed, Electro~ic (Tantalum), Chip, Established Reliability Capackor, Fued, Electro~ic (Nonsoiti Electro~e), Tantalum Capackor, Fixed, Ek@ro~k (Nonmld ElectIo~e), Tantalu m, Establish Reliabil~ Capacfior, Fixed, Electro~ic (Nonsolid Ele@o~e), Tantal urn
.0020
CSR
39003
.00040
See %R Table
55365
.00005
See %R Table
r CL 3965 39006
.00040 .00040
1 1
2 2
4 4
1 , 1
83500
.00040
Cathode
cU, CUR 39018
Capacitor, Fixed, Ebctro~ic

(Aluminum Oxide), Established Reliabil~ and Nonestablish* Reliability
.000 12
I .000 12 2 2 1 1
L CE
62
Capacitor, Fixed Electrolytic (DC, Aluminum, Dry Ele@o~e, Polarized) Capacitor, Variable, Ceramic Dieied* (Trimmer) Capacitor, Variable (Piston Type, Tubular Trimmer) Capactior, Vati*le, (Trimmer) Ak Die Iectric
Cv L Pc CT (% *
81 14409 92 23183
.0079 .0060 .0000072 .0060
1 2 2 1
1 1 1 1
5 5 5 5
1 1 1 1
Capacitor, Fixed or Variable, Vacuum Dielectric
10-2 I .-
Supersedes
Section
10.1 -10.20
. . of Revlslon F
MIL-t-iDBK-217F NOTICE 2
10.1
CAPACITORS
Temperature T(%) 20 30 40 50 60 70 80 90 100 Column .91 1.1 1.3 1.6 1.8 2.2 2.5 2.8 3.2 3.7
4.1
Factor - XT 1 Column 2 .79 1.3 1.9 2.9 4.2 6.0 8.4 11 15

21 27
Capacitance Factor
Capacitance, c(~F) .000001 .00001 .0001 .001 .01 .05 .1 .5 1 3 8 18 40 200 1
=
- ~,
(
Column 1 .29 .35 .44 .54 .66 .76 .81 .94 1.0 1.1 1.2 1.3 1.4 1.6 1.9 2.1 2.3 2.5 2.7
Column 2 .04 .07 .12 .20 .35 .50 .59 .85 1.0 1.3 1.6 1.9 2.3 3.4 4.9 6.3 8.3 11 13
110
120
130
140 150
4.6 5.1
35 44
5.6 -Ea 1
56
1000 )) 3000 10000 30000
%T
= W ( 8.617
x10-5
( T + 273
Column 1: Ea = .15 Column 2: Ea = .35 T = Capacitor Atiient Temperature
60000 120000 Column 1: ~ Column 2: ~ = Cog = C-23
NOTE: 1. fiT values shown should only ~ used up to the temperature rating of the
device.
2,
For devices with ratings higher than

150C, use the equation to determine XT (for a~li~tions ahve 150C).
Supersedes I I I
Section 1-1 . .
10.1 -10.20 I
of Revision
r
F
Is-1
10-3
. . t3-
MIL-I+DBK-217F
NOTICE 2
10.1
CAPACITORS Voltage Stress Fac!or - x,
Voltage Stress 0.1

0,2 0.3 0.4
Column
Column 2
Column 3 1.0 1.0 1.1 1.3 1.6 2.0 2.6 3.4 4.4 5.6 *
Column 4 1.0 1.0
Column 5 1,0 1.1 1.2 1,5 2.0 2.7 3.7 5.1 6.8 F 9.0 4
1.0 1.0 1.0 1.1 1.4 2.0

3.2 5.2 8.6
1.0
1.0 1.0 1.0
1.0 1.0 1.0

2.0 15 130 990 5900
0.5 0.6 0.7 0.8 0.9 1 4
1.2
2.0 5.7 19
59 166
14
Column 1: 7CV =
()
~
~ 5+1 .6 s
Column 4:
Zv=
()
g () .5
~ .6
17+1
Column 2:
xv =
10+1
Column 5: 3+1 s=
%V =
3+1
() Column 3: xv=
() &
,6
Operating Voltage Rated Voltage
Note: Operating voltage is the sum of applied DC voltage and peak AC voltage.
Series Resistance Factor (Tantalum CSR Style CapacitorS Only) - XSR Circuit Resistance, CR (ohms/vott) >0.8 >0.6 to 0.8 >0.4 to 0.6
>0.2 to 0.4
%R
.66 1.0 1,3 2.0 2.7 3.3 <
>0.1 to 0.2
CR .
Eff. Res. Between

Voltage
Cap. and Pwr, Su~~ Applied to Capacitor
10-4
Supersedes
Section 10.1 - 10.20 of Revision F
MIL-HDBK-217F
NOTICE 2
10.1
CAPACITORS
Quality Factor - XO
Quality Established o c S,B R P M L Non-Established Reliability Capacitors (Most Two-Letter Reliability Styles
7rQ
Environment Environment GB .001 .01 .03 .1 .3 1.0 1.5 GF GM Ns Nu AC IF Uc UF RW
Factor - KE fiE 1.0 10 20 7.0 15 12 15 25 30 40
Styles)
3.0
SF MF 20 50 570
.50
Commercial Level
or Unknown
Screening 10.
ML CL
NOTE: ~t~tis~reltiil~~l~amfa~re rate graded (D, C, S, etc.) based on life testing defined in the applicable military device specification. This category usually applies only to three-letter styles with an R suffix.
Supersedes
Section
10.1 -10.20
of Revision
10-5
MIL-HDBK-217F
NOTICE 2
10.2
Example
CAPACITORS,
EXAMPLE
Given:
A 400
VDC rated capacitor type CQ09A1KE153K3 is being used in a fixed ground environment, 50C component ambient temperature, and 200 VDC applied with 50 Vrms @ 60 Hz. The capacitor is being procured in full accordance with the applicable specification.
The letters CQW in the type designation indicate that the specification is MlL-C-l 9978 and that it is a NonEstablished Reliability quality level. The E in the designation corresponds to a 400 volt DC rating. The I 53 in the designation expresses the capacitance in picofarads. The first two digits are significant and the third is the number of zeros to follow. Therefore, this capacitor has a capacitance of 15,000
picofarads. (NOTE: Pioo = 10-12, ~ = 10-6)
Based orI the given information the following modei factors are cfetetmined from the tables shown in Section 10.1.
lb
XT
=
=
.00051
1.6
Use Table Equation (Note 15,000 pF = .015 PF) DC Volts
7CV
2.9
s=
Applied + fi (AC Volts Applied~ DC Rated Voltage
s=
200 + dz (50~ . .m 400
$
$
= ~ ~~c~v
=
%RXQ
= (.00051)(I.6)(.69)
(2.9) (1)(3 .O)(1O)
.049 Failures/l
06 Hours
10-6
Supersedes
Section
10.1 - 10.20 of Revision F
MIL-HDBK-217F
NOTICE 2
11.1 sTYLE
TF
INDUCTIVE
DEVICES,
TRANSFORMERS
DESCRIPTION
Audio, Power and High Power Pulse
SPECIFICATION MIL-T-27 MIL-T-21038 MIL-T-55631
TP
Low Power Pulse Intermediate Frequewy
(IF), RF and Discriminator
)LP= ~~xTxQz~
Fai~Ures/l
06 Hours

Transformer Flyback (C 20 VOM) Audio (15 -2oK Hz) Low Power Pulse (Peak Pwr. c 300W, Avg. Pwr. < 5W)
Lb
Quality Factor - ~ r b QualitY lcQ
(F/106 hrs.)
.0054 .014 .022

i
MIL-SPEc
Lower I
1
3 1
Environment
Fader
- ZE fiE 1.0 6.0
High Power, High Power Pulse (Peak Power z 300W, Avg. Pwr.25W)
.049
Environment . GB GF
IOM Hz) RF (1OK.
.13
I
,
I
GM
Ns
Nu Alc
12
5.0 16 6.0 8.0 7.0 9.0 24 *A ,
Tempemtum Factor -XT I
30 40 50 60 70 80 90 100 110 120 130 140 150 160 170

180
!: 1 .Z
1.4 1.6 1.8 1.9 2.2 2,4 2.6 2.8 -. 3.1 .-
I I
IF %c UF
I
1
t-Iv v
Am,
I . I
ML cL
.
.3U 13
34 610
3.3 3.5 3.8

4.
Ad
4.3
4.6 -.11 , 1
)){ (C), See Section
I_
190
XT =
exp ~W-29Et 8.617x I0
THS = Hot Spot Temperature 11.3. This prediction
model assumes that the
insulation rated temperature E not exceeded for

more than 50,0of the time.
11-1
Supersedes
11.1
INDUCTIVE
DEVICES,
TRANSFORMERS
Transformer Characterlstlc Determlnatlon Note MIL-T-27

TF
4
Example
R
Designation 01 GA
576
AIL-T-27
I
Grade
Irlsul&dkm
I
Famtiy
I
Syrflbd
~~
chS
Family Type Codes Are: Power Transformer 37 though 41 Audio Transformer: Pulse Transformer: and Filter: 01 through 09,
10 through 21, 50 through 53 22 through 36,54
MI L-T-21038 TP
MIL-T-21we
4
Example
Q
Designation
xl 1OoBcool
I
Gr*
I
h.suticxl
Cbs
MlL-T-5563I. The Transformers are Designated with the folbwing Types, Grades and Classes.
Type 1 Type II Type Ill Grade 1 Intermediate Frequency Transformer Radio Frequency Transformer Discriminator Transformer
Grade 2 Grade 3 Class O Class A Class B Class C
For Use When Immersionand Moisture Resistance Tests are Required For Use When Moisture Resistance Test is Required For Use in Sealed Assemblies 85C Maximum Operating Temperature I05C Maximum Operating Temperature 125C Maximum Operating Temperature > 125C Maximum Operating Temperature
The class denotes the maximum operating temperature (temperature rise plus maximum
ambient temperature)
11-2
-
Supersedes
page
11-2 of Revision F
z..__.
. _
=.____
. -=---.+--_-____>_
._ .
e-
~.
__. __
.. _
MIL-HDBK-217F
NOTICE 2
11.2 SPECIFICATION MIL-C-15305 MIL-C-83446 MIL-C-3901O STYLE
INDUCTIVE
DEVICES,
COILS
DESCRIPTION Fixed and Variable, RF Fixed and Variable, RF, Chip Molded, RF, Est. Rel.
Base Failure Rate - ~ + Inductor Type , ~ F/lo6 Ms.
Quality Factor - ~ Quality

s IIQ
Fixed Inductor or Choke

Variable Inductor
.000030
.000050
.03
.10
R P
.30
1.0
Temperature
Factor - XT
XT
TH@) 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190
MIL-SPEC .93 1.1 1.2 1.4

1,6 1.8
1.0 3.0
Lower
Environment Factor - XE Environment GB GF GM

Ns Nu *IC
~E 1.0 6.0
12 5.0 16 6.0
1.9
2.2 2.4 2.6 2.8 3.1 3.3 3.5 3.8
IF *UC *UF *RW sF MF

ML
))
8.0 7.0 9.0 24 .50

13 34 610
4.1 4.3 4.6

-.11
10 -5
XT = e)(p
8.617x
1 1 TH~ + 273 -=
CL
HS = Hot Spot Temperature (C),

See Section 11.3
Supersedes
F
L1
11-3
MIL-HDBK-217F
NOTICE 2
11.3
INDUCTIVE
DEVICES,
DETERMINATION
OF
HOT
SPOT
TEMPERATURE
l-lot Spot temperature can be estimated as follows:
THS=TA+
where: -$+s TA AT = = = Hot Spot Temperature Inductive (C) Device Ambient Operating
1.1 (Am
Temperature
(C)
Average Temperature
Rise Above Ambient (C)
Rise Test Method paragraph in the device base AT can either be determined by the appropriate Te~erature specification (e.g., paragraph 4.8.12 for MI L-T-27E), or by approximation using one of the procedures described below. For space environments a dedicated thermal anatysis should be performed. AT&p mximation (Non-spaoe Environments) Information . - Known
1. MIL-C-3901 O Slash Sheet Number MIL-C-39010/l C-3C, 5C, 7C, 9A, lOA, 13, 14
AT Armoximation
AT= 15C AT= 35C
MIL-C-39010/4C, 6C, 8A, 11, 12 2. 3.

4.
Power Loss Case Radiating Surface Area Power Loss Transformer Weight Input Power Transformer Weight
(Assumes 800/0 Efficiency)
AT= 125 WL/A
AT= 11.5 wL/(wt.)6766 AT= 2.1 W~(Wta)06766
Power Loss (W) Radiating Surface Area of Case (in2). See below for MIL-T-27 Case Areas
A=
Wt. =
Transformer
Weight (W)
(lbS.)
w,
= Input Power
NOTE: Methods are listed in prefemd order (i.e., most to least accurate). MIL~-3901 O are microminiature devices with surface areas less than 1 in2. Equations 2-4 are applicable to devices with surface areas from 3 in2 to 150 in2. Do not include the mounting surface when determining radiating swface area.
MIL-T-27 Case Radiati nq Areas (Excludes Mounting Surface) Case AF AG Al-1 AJ EB EA

FB
Area (in2)
Case
Area (in2)
Case
4 7 11
18
GB GA H5
HA
33 43 42
53
LB LA MB
MA
Area @2) 82 98 98
115 117
21 23
25
JB JA
KB
58 71
72
NB NA
OA
139
146
FA
31
KA
84
17-4 #,.
Supersedes
pages 11-4 and 11-5 of Rev[sion F
12.1
ROTATING
DEVICES,
MOTORS
The following failure-rate model applies to motors with power ratings below one horsepower. This model is applicable to pcdyphase, capacitor start and run and shaded pole motors. hs application may be extended to other types of fractional horsepower motors utilizing rolling element grease packed bearings. The model is dictated by two failure modes, bearing failures and winding failures. Application of the model to D.C. brush motors assumes that brushes are inspected and replaced and are not a failure mode. Typical applications include fans and blowers as well as various other motor applications. The mode! is based on References 4 and 37, which contain a more comprehensive treatment of motor life The references should be reviewed when bearing loads exceed 10 percent of rated load, speeds prediction methods. rpm or motor loads include motor speed slip of greater than 25 percent. exceed 24,000 The instantaneous failure rates, or hazard rates, experienced by motors are not constant but increase with time. The over time wrid T. This time period is failure rate model in this section is an average failure rate for the motor op-ting either the system design life cycle (LC) or the time period the motor must last between complete refurbishment (or replacement). The model assumes that motors are replaced upon faifure and that an effective constan! failure rate is achieved after a given time due to the fact that the effective ~ime zero- of replaced motors becomes random after a , can be treated as a constant failure rate and significant portion of the population is replaced. The average faikuO rate,
added to other part failure rates from this Handbook.
x,
Lz
+
l.p=
[
A(xB
BaW
x 106 Failures/l 08 I-iours 1
Bearing & Winding Characteristic Life - c%Rand aw .-
A (c)
o
(Hr.)
(Hr.)
TA (=) 70 80 90 100 110 120 130 140
aB (Hr.) 22000 14000 9100 6100 4200 2900 2100 1500
(Hr.)
E 30 40 50 60
3600 13000 39000 78000 55000 35000
6.49+06 3.2e+06 1.W+06 8.9e+05 5.oe+05 2.9e+05 1.8e+05
1.1Q+05 7.09+04 4*6e+04 3.le+04 2.19+04 1.5e+04 1.09+04 7.5e+03
2.534aB [ 2357 ,0 [ TA + 273 %/ aB w TA = = 10 (
TA2~:73 )
1 4500 10 ( 20-~ ) +300
1
-1
1.83]
Weibull Characteristic Life for the Motor Bearing Weibull Characteristic Life for the Motor Windings Ambient Temperature (C)
NOTE:
See page 12-3 for method to cakulate aB and ~
when temperature is not @nstant.
Supersedes
. __ __ ______ __

-.____
12-1
..-_ _
12.1
ROTATING
DEVICES,
MOTORS
A and B Determinatbn
L -- and L c Determination .. 1 1 B 1.1

.29 1.7 5.4
Motor Type Electrical (General)
A 1.9
.48 2.4 11
Lcw&
aB 0-.10
aw
k,
or Q
Sensor
Servo Stepper
.13 .15 .23 .31 .41 .51 .61 .68 .76 1.0
.11 -.20 .21 -.30
Example Calculathn A general purpose elecltial motor is operati~ at 50C in a system with a 10 year desgn life (876W hours) expedancy,
.31 -.40 .41 -.50 .51 -.60 .61 -.70 ,71-.80
55000 Hrs. 2,9e + 5 Hrs.

87600
~fS. =
.81 -.90
1 .e
55000
87600
I+rs.
I-trs.
>1.0 .3
2.9e + 5 Hrs. =
LC is the system design Me cycle (in hours), or the motor preventive rnaintename intewal, if
motom will be periodidly replaced or
1.0
(
for
L& . aB
1.6 ) .3 )
refutished.
Determine kl and ~ separately LC am LC ratios. based on the respedive UB aw
.23 ( 1.9 1.1
f.rg= aw
%=
[*+
.23 (1. V(2.9e
+ 5)
x0
10.3 Failures/l 06 Hours
~9.9 ILL
Supersedes
MIL-1-iDBK-217F NOTICE 2
12.1 Calculation
for Cycled Temperature
ROTATING
DEVICES,
MOTORS
The following equation can be used to calculate a weighted characteristic life for both bearings and windings
(e.g., for bearings substitute aB for all as in equation). h1+h2+h3+------hm

a=
hl
hz
+ al
where: a h, h* h3 hm al either ~ or aw
+ a2
h3 +------- a3
h~ a
m
Time at le~erature
T1 T, to T3
Time to Cycle From Temperature Time at Temperature mme at Temperature Bearing (or Winding) Bearing (or Whaling) T, + T3 T~=2$T4=2 T3 Tm Liie at T1 Life at T2
T3 + T,
T3
T2
TI
. -f
h4
hl
II
1
hz
I
h3
Hours Thermal
(h) Cycle
Supersedes
page 12-3 of Notice
12-3
12.2
ROTATING
DEVICES,
SYNCHROS
AND
RESOLVERS
DESCRIPTION Rotating Synchros and Resolvers

kp = &S~NXE
Failures/l
06 Hours
NOT E:
Synchros and resolvers are predomiwtely used in service requiting only slow and infrequent motion. Mechan~al wearoti problems are infrequeti so that the electrical failure mode dominates, and no mechankal mode failure rate is required in the model above. Number of Brushes Factor - ~ Number of Brushes = ~
%N 1.4
2.5 3.2
30 35
40
45 50 55 60 65
.0083 .0088 .0095

.010 .011 .013 .014 .016
70 75 80
.019 .022 .027
85 90 95 100 105 110 115 120 125 130 ~
.032 .041 .052 .069 .094 .13 .19 .29 .45 .74 ,1.3
52
3 4
Environment Environment
Factor - ZE fiE
r
A
GB
%
TF
1.0
2.0
12 7.0 18 4.0 6.0 16 25 26
.oo535expf-)8
Frame Ternpwatum (z)
I
GF
%
N~ N AC IF
If Frame Temperature is Unknown Assume

TF=40C + Atiieti Tempenture
*UC
Size Factor - x~
w
UF
1
RW SF
DEVICE TYPE Synchro Resolver \
Size 8 or smaller 2 3
Size 10-16
Size 18 or Larger 1
.50
14
MF
1.5 2.25 ML 1.5
36 680
I
CL
12-4
Supersedes
page 12-4 of Notice 1
//-
.>.
\NaaA\
12.3
ROTATING
DEVICES,
ELAPSED
TIME
METERS
DESCRIPTION Elapsed Time Meters
kp =&p~Fai
lures/106
Hours
Base Failure Rate - ~ Type A.C. Invefier Driven Commutator D.C. I Lb 20 30 80
Environment Factor - xc Environment GB GF % Ns Nu
L
~E 1.0 2.0 12 7.0 18 5.0 8.0 16 25 26 .50 14 38 N/A
Temperature Stress Factor - XT Operating T (C)/Rated T (~) o to .5 .6 .8 1.0 [ XT .5 .6 .8 1.0
*IC IF Uc UF RW SF MF ML CL
Supersedes
12-5
MIL-HDBK-217F NOTICE 2 13.1 RELAYS, MECHANICAL
SPECIFICATION M\L-R-5757 MIL-R-6106 MIL-R-13718 MIL-R-19646 MIL-R-19523 MIL-R-390~6
DESCRIPTION Mechanical Relay MIL-R-83516 MIL-R-83520 ML-R-83536 MIL-R-83725 MIL-R-83726 (Except Class C, Solti State Type) Failures/l a. Ob Hours Load Stress Factor - XL ~- -I T.-A 1
{
)bP=
&Lncxc&xQn
1
T. (%)
n
Base Failure Rate - ~ Rat# Tempentt I~a 1 . I 125$ I 0s% :&9

.0067 .0075 .0064 .0094 .010 .012 .013 .014 .016
:6 .005= .0066 .0073 .0081 .0089 .0098 .011 .012 .013 .014 .015 .017 .018 .019 iii .022 .024 .026 .027 .029 .031
25
30 35 40 45 50 55 60 65 70
l=-.U3
.10
.20 .30 .40 .50 .60 .70 .80 .90 ~ 1. y--
R*06 .1
I
1
1.02 1.06 1.15 1.28 1.48 1.76 2.15 2.72 3.55 4.77 S2 -j
1.28 1.76 2.72 4.77 9.49 21.4
2,72 9.49 54.6
75
80 65 90 95 100 105
.017
.019 .021
3.
~.exp ()
S2 ~
()
110
115 120 125 -.19 % -.0059 exp ( 8.617
X 10-5
! 1 )
For single dev-s wtkh switchtwo different load typs, evaluate q-for each possible str-s bad tyPS combinatmnand use the worse casO (largest XL).
~-zm1)
1 1 . 1 298 q , ,I
CydiMI Fader- ~yc

c@e Rate (@cbS per Hour) 21.0 <1.0
Cycle
? %Yc
2 %
-.0059 exp
-.17 8.617
X
10-5 [ T + 273
L
/ r
(MIL-SPEC) 10 0.1 CYC
~A
~bant
Tempmture VC)
Rate
Contad Fom Factor - nc

* 1
(C@es per Hour) >1OOO 10-1000 <10 NOTEA I 100 Cycles per Hour 10 1.0
(Applies to Active Concluding Conta~s) c mntact Form s?S1 DPST sPOT 3PST 4PST DPDT
3PDT 4PDT 6PDT 1.00
q
I .au 1.75
cn
2.00
2.50
3,00 425 550 800 1
Values of nCYC for cycling rates beyond the
n
I
basic design hmttations of the relay are not valld Deslg specdicatlons should be consulted prior to evaluation of CYC
-H
ITHSISIUI
13-1
page -U.l 1 13-1
Supersedes
nnll
of Revision
WI
F
. rlxuu. uulllwalLlwIl 10 IISZUIOUWUJ,
w-l!W1-. -y----------. ---
13.1
RELAYS,
MECHANICAL Application and Constfuction Factor - fiF 1

7tQ
Quality Factor - n, Quality

R P Contact
.10
Rating ~
lrrent 3Wmv Id ma)
Application Type D~ Circuit
Construction Type (Long)
Armature
Dry Reed
Mercury
.30 .45 .60 1.0 1.5 1.5 2.9
Wetted
x u M L MIL-SPEC, Non-Est. Rel. @mmercial
General
Pum09e
b Sensitive (0-lCN)mw)
Magnetic Latching Balanc6d Armature Solenoid Armature (LoW) Balanced Armature Solenoid Armature (Long and
short) Mercury Wetted

Magnetic Latching Meter Movement Balancd Armature Armature (ShOti)
Polarized
Environment Factor - xc L
\
I
T I
1
2 6 100 10 10
100
1
Environment GB
fiE 1.0 2.0 15 8.0 27 7.0 9.0 11 12 46 .50 25 66 N/A

I
25
GF
% Ns Nu AC IF %c UF RW SF MF ML c,
M
Electronic Ilrne Dew, ~ *-Thermal
.atch ing, Magnetic 5-20 Amp High Voltage ~ Power
w Reed
Wetted Balan@ armature Vacuum (Glass) Vacuum (Ceramk) Armature (Longand
Mikwy
10
5
5 20 5
3
: 3 2 2 7 12 10 5
short)
Mercury Wetted Magnetic Latching Mechan~1 Latching BalaArmature Solenoid Armature (Short) Mechanlcd Latching Baian@d Armature Solenoid
25-600
Contractors (High Current)
13-2
Supersedes
page
13-2
of Revision
fvllL-HDBK-21
NOTICE 2
7F
13.2 SPECIFICATION MIL-R-28750 MIL-R-83726
RELAYS,
SOLiD
STATE
AND
TIME DELAY
DESCRIPTION Relay, Solid State Relay, Time Delay, Hybrid and Solid State
The most accurate method for predicting the failure rate of solid state (and solid state time delay) relays is to sum the failure rates for the individual components which make up the relay. The indvidual component failure rates can either be calculated from the models provided in the main body of this Handbook (Parts Stress Method) or from the Pafls Count Method shown in Appendix A, depending upon the depth of knowledge the analyst has about the components being used. If insufficient information is available, the following default model can be used: ~ = ~z@E Failures/106 liours
Base Failure Rate - ~ 1 Relay Type Solid State Solid State Time Delay Hybrid
Environment Factor - XE Lb
1
Environment GB GF
fiE 1.0 3.0 12 6.0 17 12 19 21 32 23 .40 12 33 590
.029 .029 .029
GM Ns N Alc
Quality Factor - z~
IF
7CQ 1
Quality MIL-SPEC Commemial
%c UF RW SF MF ML cL
1.0 1.9
Supwsedw
page 13-3 of RwIsm
13-3
14.~
SWITCHES
Base Failure Rate - ~ 1 Spec. ~ (F/106 tirs.) MIL-SDescription

Centrifugal Dual-In-line Package Limit N/A 83504 8805 3.4 .00012 4.3 2.3 1.7 2,8
Stress s 0.05
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Load Stress Factor - XL Load Type Inductive Resistive 1.02 1.00 1.06 1.02
1,06 1.15 1.28 1.48 1.76 2.15 2.72 3.55 4.77 1.28 1.76 2,72 4.77 9.49 21.4
Lamp 1.06
1.28 2.72 9,49 54.6
Liquid Level Microwave (waveguide) pressure
pushbutton
II
N/A
Iced
locker iotafy
Sensitive
Thermal
Thurnbwhed
Toggle
I
4
Supersedes
8932 9395 1211 8805 I 22885 24317 55433 3950 22885 3786 13623 15291 15743 22604 22710 45885 82359 8805 13484 22614 12285 24286 22710 3950 5594 8805 8834 9419 13735 . 81551 83731
.10
.0010 .023 .11
s=
Operating Load Current Rated Resistive Load Current exp (S/.8)2
XL
for Resistive Load for Inductive Load for tirnp Load
fiL fiL
= =
exp (s94)2 exp (S/.2)2
NOTE: When the switch is rated by indutiive load, then use resistive nL. Conta@ Configuration Factor* - Zc # of Contactst NC Contact Form 1 SPST 2 DPST 2 sPOT 3 3PST 4 4PST 4 DPDT 6 3PDT 8 4PDT 12 6PDT
.49
.031 .18 .10
xc 1.0 1.3 1.3 1.4 1.6 1.6 1.8 2.0 2.3
I
4
Applies to toggle and pushbutton switches only, all others use fic = ~.
74-1 page 14-1 through 14-4 of Revision F
14.1
SWITCHES
Environment
~Q I
Quality Factor - Kn .
Factor - n~
~E
I
Quality MIL-SPEC Lower
Environment
GB J GF GM NS Nu *C IF Uc
UF RW SF MF ML CL
1.0 3.0 18 8.0 29 10 18 13

22 46 .50 25 67 1200
14-2
Supersedes
page 14-1 through
14-4
of Revision
14.2
SWITCHES,
CIRCUIT
BREAKERS
SPECIFICATION MIL-C-13516 MIL-C-55629 MIL-C-83383 MIL-C-39019 W-C-375
DESCRIPTION Circuit Breakers, Circuit Breakers, Circuit Breakers, Circuit Breakers, Circuit Breakers,
Manual and Automatic Magnetic, Unsealed, Trip-Free Remote Control, Thermal, Trip-Free Magnetic, Low Power, Sealed, Trip-Free Service Molded Case, Branch Circuit and Sewice
kp = &cXuZQnE Base Failure Rate - k Description Magnetic Thermal Thermal-Magnetic
Failures/l
06 Hours oualitv Factor - ~n
%3
.34 .34 .34
Quality MIL-SPEC Lower
7CQ
1.0 8.4
Environment Factor - xc IE Configuration Factor - m Configuration SPST DPST 3PST 4PST 1.0 2.0 3.0
4.0
nvironment GB GF
1.0
2.0 15 8.0 27 7.0 9.0 11 12 46 .50 25 66 NtA
GM
Ns Nu
AC IF %c
Use Factor - z Use Not Used as a Power On/Off Switch Aiso Used as a Power On/Off Switch 1.0 ,
UF RW SF MF 2.5 ML CL
Supersedes
14-3
15.1 LP = kbnTnKnQnEFailures/lo6 ours
CONNECTORS,
GENERAL
APPLICATION NOTE: The failure rate model is for a mated pair of conneCtom. It is sometimes desirable to assign half of the overall mated pair connedor (i.e., single corm-or) failure rate to the Ime replaceable unit and An example of when this would be beneficial is for input to maintainability half to the chassis (or backplane). prediction to allow a failure rate weighted repair time to be estimated for both the LRU and chassis. This accounti~ procedure could be signiftint if repair times for the two halves of the connector are substantially different. For a single connector divide ~ by tWO.
Temperature Factor - XT
I
Description ;ircular/Cylititil
~ification MIL-C26482 115 27599 i500 29600 1840 83723 )999

1511
-$) (v
20 .91 1.1
1.3
.0010
30 40 50 60 70
1.5 1.8 2.0 2.3 2.7 3.0 3.4 3.7 4.1 4.6 5.0 5.5 6.0 6.5 7.0 7.5 8.1 8.6 9.2 9.8 I
-.14
ard Edge (PCB)*
21097 55302 24055 24056 24308 28731 28748 83515 21617 24308 28748 28804 81659 83513 8352? 83733 85028 S607 36X3 S650 3655 15370 25516 26637 39012 55235 83517 55074 22992
49142
.040
80 90 100 110 120 130

140
exagonal ack and Panel
.15
.021
150 .046 160 170 180 190 200 210 220 .00041 230 240 250 r
Rectangular
3F Coaxial
10.
XT
sexp
Telephone Power
Trlaxial
.0075 .0070 .0036
1 8.617
X 10-5
1
+
To
273
. 1 298
)1
To = Connector Ambient + AT
AT = Connector Insert Temperature (see Table) Rise
Pr~nted Circuit Board Connector 15-1 Supersedes

a.. . . . . . .. ____
page
15-1
through
15-5
of Revision
F . .. ... .
. a ___
_______ . .
~er Contact 2 3 4 5 6 7 8 9 10 15 20 25 30 35 40
Default Insert Temperature Rise lAT C) , Determination Contact Gauge Amperes L
Mating/Unmating
Factor - nK
~K
30 10 22 37 56 79
Mating/Unmating Cycles* (per 1000 hours) 12 0 1 1 2 3 4 5 6 7 15 26 39 54 72 92
22 4 8 13 19 27 36 46 57 70
20 2 5 8 13 18 23 30 37 45 96
16 1 2 4 5 8 10 13 16 19 41 70 106
o to .05 > .05to .5

>.5t05 >5t050
1.0
1.5 2.0 3.0
> 50
q One cycle includes both connect and
disconnect.
Quality Factor - XQ
I
Lower
Quality MIL-SPEC
I
1
I
2
AT AT AT AT AT AT AT AT AT
= = = = = = = = =
3.256(i) 85 2.856(i) 85 85 2.286(i) q 1.345(i)l 85 0.989(i) q 85 0.640(i) 85 0.429(i) 85 0.274(i) 85

0.100 (i) 85 Insert Temperature
32 Gauge 30 Gauge 28 Gauge 24 Gauge 22 Gauge 20 Gauge 18 Gauge 16 Gauge
Contacts Contacts Contacts Contacts Contacts Contacts Contacts Contacts
Environment Factor - XE Environment GB GF GM ~E 1.0 1.0
12 Gauge Contacts Rise

4
8.0 5.0 13 3.0

5.0 8.0 12 19 .50 10
AT =
i =
Ns Nu Alc
IF
Amperes per Contact
RF Coaxial Connectors
AT = 5C AT= 50C
RF Coaxial Connectors (High Power Applications)
Uc UF RW SF MF
ML
27 490
c,
15-2
Supersedes
page 15-2 through
15-5 of Revision
15.2
CONNECTORS,
SOCKETS
Lp = ++CP7CQ7CEFailures/l
06 Hours
Base Failure Rate - ~ Description Dual-In-Line Package Single-In-Line Package Chip Camier Pin Grid Array Relay
Transistor Electron Tube, CRT
Active Pins Factor - np Lb .00064 .00064 .00064 .00064 .037

.0051 Number of Active Contacts 1 2 3 4 5 6 7 8 9 10 11 12 13
14 15
~Q
Spec. httlL-S 83734 83734 38533 NIA 12883

12883
Number of
Act ive
Contacts
7tp
6.9 7.4 7.9
1.0
1.5 1.7
12883
.011
Quality Factor - ~ Quality MIL-SPEC. Lower
.3 1.0
Environment Factor - ~E Environment GB GF % Ns Nu AC IF *UC *UF

*RW
fiE 1.0 3.0 14 6.0 18 8.0 12 11 13

25
16 17 18 19 20 25 30 35 40 45 50
H 2.1 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 4.1 4.5 5.0 5.5 5.9 6.4
55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 13.5 140 ;$ 155 160 165 170 175 180
8.4 8.9 9.4 9.9
10 11
12 12 13 13 14 14 15 16 16
17 18 18 19 20 20 21 22
Number of Active Pins
An active contact is the conductive element which mates with another element for the purpose of transferring electrical energy.
SF MF ML c, Supersedes
I
.50 14 36 650 page 15-6 of Revision F

I I l.I ---1
15-3
I
16.1 Ap =kb
INTERCONNECTION Nptc+N2(~c+
ASSEMBLIES
WITH
PLATED
Hours
THROUGH
HOLES
13)
7tQnEFaillJre@
APPLICATION NOTE: This model applies to board configurations with leaded devices mounted into the plated through holes and assumes failures are predominately defect related. For beads using surface mount technology, use Section ~6.2 For a mix of leaded devices mounted into plated through holes and surface
mount devices, use this model for the leaded devices and use Section 16.2 for the surface mount contribution.
A discrete wiring assembly with electroless deposit plated through holes is basidly a pattern of insulated wires The primary cause of failure for both printed wiring and discrete laid down on an adhesive coated substrate. wiring assemblies is associated with plated through-hole (PTH) problems (e.g., barrel crackng). Quality Factor - ~
Base Failure Rate - ~ Technology Printed Wiring Assemb!yFtinted Circuit Boards with PTHs kb .000017
Quality MIL-SPEC or Comparable Institutefor Interconnecting, and Packaging Electronic Circuits (lPC) Standads (IPC Level 3) Lower
ltQ
Discrete Wiring with Electroless A Deposited PTH (< 2 Levels of Circuit@ Nu~r
.00011
of PIWs Factor - N1 and N2

Quantity
Factor I N,
I
Automated Techniques: Quantity of Wave Infrared (IR) or Vapor Phase Soldered Functional PTlis Quantity of Hand Soldered PTHs Complex~ Factor - ~ I
Envimnmti Environment GB
Factor -xc
b 1
~E 1.0
N2
I
L I
GF GM
2.0 7.0 5.0 13
Number of Circuit Planes, P S2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
xc 1.0
&s
Nu
1.3 1.6 1.8 2.0 2.2 2.4 2.6 2.8 2.9 3.1 3.3 3.4 3.6 3.7 3.9 4.0 1
%c
5.0
IF %c UF
8.0 16 28 19 .50 10 27 500
%w
SF MF ML cL .
Discrete Wwng w/PTH

xc =
.65 P 63
Ifj-1
Supersedes -.
--1I
page
16-1
of Revision
F ,
... ~. .
Jr--
-----------
MIL-I+DBK-217F NOTICE 2
16.2
INTERCONNECTION ASSEMBLIES, SURFACE MOUNT TECHNOLOGY
APPLICATION NOTE: The SMT Model was ctevelopecf to assess the life integfiiy of leadless and leaded devices. It provides a relative measure of circuit card wearout due to thermal cycling fatgue failure of the weakest link- SMT device. An analysis shouti be periorrned on all circuit board SMT components. The component with the largest failure rate value (weakest link) is assessed as the overall board failure rate due to SMT. The model assumes the board is completely renewed upon failure of the weakest link and the results do not consider solder or lead marwfacturi~ defects. This model is based on the techniques developed in Reference 37.
ASMT
Average failure rate over the expected equipment life cycle due to surface mount device This failure rate wearout. contrbutbn to the system is for the Surface Mount Device on each board exhibiting the highest absolute value of the strain range:
where: CR
Temperature cycling rate in cycles per calendar hour. Base on a thermal analysis of the circuit board. Use table default values if other estimates do not exist. Average number of thermal cycies to failure
Nf
I ( % AT -ucc(dT+TRIsE)) ECF )LSMT = ~ ECF =
lx 10-6
Nf=
3.5 &
, (1
(as AT- Cfcc(AT+TRIsE))
Ix 10 +)-qn,c)
Effective cumulative number of the Weibull failures over ctwacte~ic life.

-..._._,.
where: d=
Ffi*iVGI _ k.....- ~llmldat~~

Lc
ral~ u w------ ~r~~- FCF --ECF .13 .15 .23 .31 .41 .51 .61 .68 .76 1.0 h=
Distance from center of device to the furthest solder joint in miis (thousandths of an inch) Solder joint height in miis for Ieadiess devices. Default to h = 8 for ali leaded configurations. Circuit board substrate thermai coefficient of expansion (TCE)
-MT 0-.1 .11 -.20 .21 -.30 .31 -.40 .41 -.50 .51 -.60 ,61-.70 .71 -.80 .81 -.90 > .9 LC =
w= AT =
Use environment temperature extreme difference material thermal Package coefficientof expansion (TCE) Temperature rise due to power dissipation (Pal) =
= eJcp
w%=
TRISE =
Design iife cycle of the equipment in which the circuit board is operating
Pd
8JC
USMT = The Weibull characteristic life.

USMT is a function of device and substrate material, the manufacturing methods, and the application environment used.
~Lc =
P=
Thermal resistance /Watt Power Dissipation (Watts)
Lead configuration factor
16-2
New Page
MIL-HDBK-217F NOTIGE 2
16.2
INTERCONNECTION ASSEMBLIES, SURFACE MOUNT TECHNOLOGY as - Default TCE Substrate Values as 18 20 11 7 5 K

d
CR - Cycling Rate Defau~ Values Number Of Equipme~ TYPe Cycles/Hour l~omotive

:onsumer (television, radio, recorder) computer Telecorn~~~t~ns Commercial Alrcrati INustrial MilfiarY Gwti Appl=tbm Miliia~ Aircraft (Caf90) Miliiafy Ahcnti (FigMer)
Substrate Material FR4 Laminate FR-4 Multilayer 60ard FR-4 Multilayer Board w/Copper [ Clad Invar I ?ramicMuttilayer Bead ~pper Clad Invar Copper Clad Mol@@mm Cafbon-Fibr/EpOW Kevlar Fiber @artz Fiber Glass Fiber Epoxy/Glass Laminate Polyamtie/Glass Polyam~/Kevlar . Laminate Laminate Corw@e I
1.0
.08 .17 .0042 .25 .021 .03 .12 .5
1
3 1 5 15 13 6 8 7 7 7 6 9 20 7 1
XLC - Lead Configuration Factor Lead Configuratbn LeadlesS J or S Lead Gull WIW %C 1 150 5,000
Po&amtie/Wa~ LamiMte @oxy/Kevkr Laminate Alumina (Ceramk) @mxy Ararnkf Fiber PolyamM Aramti Fitwr Epoxy-Quafiz Fiberglass Tefbn Laminates var Porcelainked Copper Clad In 1 Fiberglass Ceramk Fibw
c - TCE Package Values , , Plastic Ceramic 7 6
AT -Use Envimnmeti Default

v Te~erature Environment GB GF GM hJs Nu Difference AT 7 21 26 26 61 31 ~ 31 57 57 31 7 N/A NIA hJIA
%c
AIF %c UF %lw Sc MF ML CL
A large plastic encapsulated E)cAMPLE: Ieadless chip canier is mounted on a epoxyglass printed Wiring assetily. The $esign ~ns~erations are: a square pa*age is 1480 roils on a side, solder height is 5 roils, power dissipation is .5 watts, thermal resistance is 20 C/wati, the design life is 20 years and envkOnmti is military grouti application. The failure rate cfevebped is the impad of SMT for a single circuit board and accounts for all SMT devices on this board. This failure rate is added to the sum of all of the component failure rates on the circuti board.
(xsMT
cfi
16-3
Nf
New Page
16.2
INTERCONNECTION ASSEMBLIES, SURFACE MOUNT TECHNOLOGY
d ~f = 35 (. R I
(asAT-ucc(A~+TRlsE)) I 0 -6)-226@Lc)
For d: For h: For as:
d = ~ (1480) = 740 roils

h s 5 roils
as = 15 (Table - EPOXY Glass) AT_ 21 (Table - GF) ~. 7 (Table - PlastiC)
ForAT:
For WC: For TRISE: For XLC:
For CR:
TRISE = eJC p = 20(.5) = 10C ZLC = 1 (Table - Leadless) CR = .03 cycle~our (Table - Milita~ Gmun@ - 7W+1O)) 1) x 104 226 (1)
Nf
=
=
35
(1
740 (.65)(5)
(W2V
Nf
18,893 theml
cycles to failure
WMT
629,767 hOu~ 18,893 cycles .03 cyiedbur =
1-c
aSMT
W=
*
28
ECF ~SMT
= =
.23 failures (TaMe - Effedive Cumulative Failures) ECF ~T .23 faiiures .0000004 failure~~ur = 629,767 kNJrS =
XSMT = ,
.4 failures/106 hours
New Page 16-4
MIL-HDBK-217F
NOTICE 2
17.1 CONNECTIONS
used on all assemblies Use the Intermnnedion Assembly APPLICATION NOTE: The failure rate model in this section applies to connedions except those using plated through holes or surface mount technology. connections to a circuit board using either plated through hole technology Model in Sectbn 16 to account for The failure rate of the strudure which supports Soldefless the connedions and parts, e.g., are wrap connections or surface mount technology. non-plated-through hole boards and terminal straps, is considered to be zero. chara~erized by SOIMwire wrapped under tenshn around a rrmdel post, whereas hati soldeting with wrapping does The following is for a single connedion. not depend on a tension induced connedion.
L = LX= Ub
Failures/l
06 Hours Envimnmnt Factor-Xc
&
Base Faihm Rate - ~ Connedion Type ~ (F/106 hm) .0013 .000070 .00026 .000015 .0000068 .00012 .000069 .17 .062
Environment
I
~E .-
GB GF GM .. . Ns
u
Hand Solder, w/o Wrapping

Hand Solder, w/Wrapping crimp
1A I
2.0 7.0 4.0 4.0 6.0
6.0 8.0
16
1 .U
Weld Soldeffess Wrap Clip Termin~bn Reflow Solder Spfing Contad Terminal Block
AC
IF
AN UF
RW SF
.50 9.0 24 420
MF ML CL
17-1
Supersedes
MIL-I-IDBK-217F
APPENDIX
A:
PARTS
COUNT
RELIABILITY
PREDICTION
Parts Count Reliablllty Predlctlon - This prediction method is applicable during bid proposal and early design phases when insufficient information is available to use the part stress analysis models shown in the main body of this Handbook. The information needed to apply the method is (1) generic part types (including complexity for microcircuits) and quantities, (2) part quality levels, and (3) equipment environment. The equipment failure rate is obtained by looking up a generic failure rate in one of the following tables, multiplying it by a quality factor, and then summing it with failure rates obtained for other components in the equipment. The general mathematical expression for equipment failure rate with this met hod is: i=n
EQUIP =
i=l
@g@i
Equation 1
for a given equipment environment where: Total equipment failure rate (Failures/1 06 Hours)
~EQulP
9
7tQ
=
=
Generic failure rate for the i h generic part (Failures/1 06 Hours) Quality factor for the i h generic part Quantity of i h generic part Number of different generic part categories in the equipment
Ni n
= =
Equation 1 applies if the entire equipment is being used in one environment. If the equipment comprises several units operating In different environments (such as avionics systems with units in airborne inhab~ed (Al) and uninhabited (AU) environments), tmn Equat~n 1 shou~ ~ aPPlied to the potiions of the equipment in each environment. These environment-equipment failure rates should be added to determine total equipment failure rate. Environmental symbols are defined in Section 3. The quaMy factors to be used with each part type are shown with the applicable ~ tables and are not necessarily the same values that are used in the Part Stress Analysis. Mcrocircuitshave an additional rnuttip~ing factor, ~L, which aOCOuntsfor the matudty of the manUfaCt@ng process. For devices in productiontwo years or more, no modifmtbn Is needed. For those in production less than two years, h should be multipliedby the appropriate XL faotor (See page A-4). It shouldbe noted that no generic failure rates are shown for hybrid microcimuits. Each hybrid is a fairly unique device. Since none of these devices have been standardized, their complexity cannot be determined from their name or function. Identically or similarfy named hybrids can have a wide range of complexity that thwarts categorization for pufposes of this prediction method. If hybrids are anticipated for a design, their use and construction should be thoroughly investigated on an individual basis with application of the prediction model in Section 5.
The failure rates shown in this Appendix were calculated by assigning model default values to the failure rate models of Section 5 through 23. The specific defautt values used for the model parameters are shown with the kg Tables for microcircuits. Defautt parameters for all other part classes are summarized in
the tables stafling on Page A-12. For parts with characteristics which differ significantly fmm the assumed defaults, or parts used in large quantities, the underlying models in the main body of this Handbook can be used.
A-1
MIL-HDBK-217F
NOTICE 2
APPENDIX
A:
PARTS
COUNT
i Nmm I 1 i 1
..mtw
r-.-04 II
-wow . .-mri
OJ
re-mo .
0--=
In
c
9 .
ZS8
1%
in
In
Lr
IA?
A-2
.
Supersedes
page A-20f
Notice 1
MIL-HDBK-217F NOTICE 2 APPENDIX A: PARTS COUNT
FF)mo
-.-N .,. .
-mmo
9-..04 .,. .
mmmm
.efwm . . . .
Cwlo .P.r) . .
Qo
. .
QNN *W*SJ
000.
0000
or-mm
.-mm . . .
to -Nsrl 0000
0000
o--m
-Wol r-mm% 000.
Omoe
.Pmm . . . .
Inulo)c *WOO Oooc
mmea m@@o Oooc
mcwea -NNC
000<
CVWF)N Cwmlou)
0000
of-Qe F-WU Oooc
u
n
N
Lo
N Lc
I
A-3
Supersedes
page A-3 of Notice 1
MIL-HDBK-217F
APPENDIX
A:
PARTS
COUNT
c?
e-i
0
Ii
9 -GJR9416
OQ!QCNO
w-
u) 0
W
64
N
>
A-4
MIL-HDBK-217F NOTICE 2 APPENDIX A: PARTS COUNT
:
I
A-5 Supersedes page A-5 of Notice 1

----
MIL-HDBK-217F
NOTICE 1
APPENDIX
A:
PARTS
COUNT I >
9
n
?4
I
o m
m z! 0 o
N
, ,
rU) 0 0
. r
c
c
in
r)
w m.
t
4
0< m
$ 8
0 o
Iii
o i
i
u
c
c <
c *
3=
0
r+
m
0
e 0,
rOA 0.
l-Fl-
II
2!
Ill
2!
?!
persedes
eviSIO!l
MIL-HDBK-217F NOTICE 2 APPENDIX

I 1
c r
Ln
I
A:
0
PARTS COUNT 1
8
( 1
< ,
-. -mm
Supersedes

1 I
A-7
I
MIL-HDBK-217F NOTICE 2 APPENDIX r A: PARTS COUNT
I
U7
o m
1g
8 m
Q e+
g)
s o
!!M . .
mf
9,
?-
.*-S . .
-w
Ji w
L
A-8
Supersedes
page A-80f
Nottce 1
MIL-HDBK-217F NOTICE 2 APPENDIX

. . . . .
A:
PARTS
COUNT
f-ul-rQti
q.-
o~elyo -CM-N.
. i .
1
i?
(i G
-----------
.(-UCU -----
---mmmmr)mm ----
----
U-imbf)inmbnlr)m -------
-----
- -
Supersedes
page A-90f
Revision
A-9
APPENDIX . A:
r
PARTS
.
0 *
. m
m=
A-IO
11 1
r r
Supersedes
APPENDIX A: PARTS COUNT
Supersedes
.. .. -.
page
A-1 1 of Notice 1
A-II
APPENDIX A: PARTS COUNT 4
0 . ~
I
I
u
II
0000 . . . .
.--a
00 . .
. .
rb.
0
----
0.
0.
0.0.
--
0.
0.
0.
T-
VIA -- -u tt{ LLI.L
330
u
0 m
A-12
Supersedes
page A-120f
Notice I
APPENDIX A: PARTS COUNT
Supersedes
page A-1 3 of Rewsion F
A-13
APPENDIX
C:
BIBL1OGRAPHY
26. 27. 28.
VHSIC Impact on System Reliability, RADC-TR-88-1 3, AD B122629. Reliability Assessment of Surface Mount Technology, Reliability
A200529. This study developed new failure rate prediction models for GaAs Power FETS, Transient Suppressor Diodes, infrared LEDs, Diode Array Displays and Current Regulator Diodes.
RADC-TR-88-72, Devices,
AD A193759. RADC-TR-88-97, AD
Prediction
Models
for Discrete
Semiconductor
29.
Impact
of Fiber
Optics
on System
Reliability
and Maintainability,
RADC-TR-88-124,
AD
A201946. 30.
Vl+SIC/Vl-tSIC Like Reliability Prediction Modeling, RADC-TR-89-1 71, AD AZ 4601. Section
This study provides the basis for the VHSIC model appearing in MIL-HDBK-217F, 5. 31. Reliability Assessment
Using Finite Element Techniques, RADC-TR-89-281,
AD MI 6907.
This study addresses surface mounted solder interconnections and microwire boards platedThe report gives a detailed account of the factors to be through-hole (PTH) connections.
considered when performing an FEA and the procedure used to transfer the results to a
reliability figure-of-merit. 32. Reliability Analysis/Assessment of Advanced Technologies, RADC-TR-90-72, ADA 223647.
This study provides the basis for the revised microcircuit models (except VHSIC and Bubble IUemories) appearing in MIL-HDBK-217F, Section 5. 33. Improved Reliability Prediction Model for Field-Access Magnetic Bubble Devices, AFWAL-TR81-1052. 34. 35.
Reliability/Design Thermal Applications,
MIL-HDBK-251.
NASA Parts Application Handbook, MIL-HDBK-978-B (NASA). This handbook is a five volume series which discusses a full range of electrical, electronic and electromechanical component parts. It provides extensive detailed technical information for
each component derating, failure part such as: definitions, screening mechanisms, construction details, operating characteristics,
techniques,
standard
parts,
environmental
considerations, and circuit application. 36. Nonelectronic Parts Reliability Data 1991 , NPRD-91. This report contains field failure rate data on a variety of electrical, mechanical, electromechanical and microwave parts and assemblies (1400 different pafi types). It is available from the Reliability Analysis Center, PO Box 4700, Rome, NY 13440-8200, Phone: (31 5) 337-0900. Reliability Assessment of Critical Electronic Components, RL-TR-92-1 97, AD-A256996. This study is the basis for new or revised failure rate models in MIL-HDBK-217F, Notice 2, resistors, capacitors, transformers, coils, motors, for the following device categories: relays, switches, circuit breakers, connectors, printed circuit boards and surface mount technology.
37.
Supersedes
page C-3 of Revision
c-3
MI L-HDBK-217F NOTICE 2
APPENDIX
C:
BIBLIOGRAPHY
38. Handbook of Reliability Prediction Procedures for Mechanical Equipment, NSWC-94/L07.

This Handbook includes a methodology for nineteen basic mechanical components for evaluating a design for R&M that considers the material properties, operating environment
and critical failure modes. It is available from the Carderock Division, Naval Surface Warfare Center, Bethesda, MD 20084-5000, Phone @Ol ) 227-1694.
Custodians: Army - CR Navy - EC Air Force -17 Review Activities: Army - Ml, AV, ER Navy - St-i, AS, OS Air Force -11, 13, 15, 19, 99 User Activities:
Army - AT, ME, GL
Preparing Activity: Air Force -17 Pro)ect No. RELI-0074
Navy - CG, MC, YD, TO

Air Force -85
c-4
Supersedes
page C-4 of Revision
STANDARDIZATION
DOCUMENT q. NUMBER
DOCUMENT IMPROVEMENT (See /nstrucfion -Reveme Side)

DOCUMENT TfTLE
PROPOSAL
Equipment
MIL-HDBK-217F,
NAME OF SU8MlTflNG
hJotlce 2
ORGANRATION
Reliability
4. n
Pred~ctlon of Electronic
(Marx one) VENDOR
TYPE OF ORGANKATtON
n b. ADDRESS (Street, Ory, State, 21P Code)
USER
MANUFACTURER
c1 1. PROBLEM AREAS a Pamgraph Number and Wording
OTHER
@Padfy)
I b
Recommended
Wording
c.
Raaaon/l?a@wle forRacommetition:
6.
REMARKS
7a. c.
NAME OF SUBM1lTER MAILINQ ADDRESS
(fJiSf, FIrsf, Ml) - @hOfld
b. 8.
WORK TELEPHONE NUMBER (hciude Ama Code]. 00 tonal DATE Of SU6MtSS10f4 (YYMkVDO)
(Streef, Ctfy, Sfafe, ZIP Code) - Optional
M DD 82 MAR 1426
1
----
----
---
------
l-*4a
nuawbw9
- -.
.-
-.
I .
INSTRUCTION S In a comlnumg eftorf to make our 8tMIdarctMtton documents better, the 000 Provtdes thts form for u6e in 6ubmlttkyj comments Thw hxrn may be and sug ostlons tor Irnprrwemrmts All users of m!lltaw stanctardlzallon documents are Wted lo provloe surJgestlons along me t(nos md(catod IaDed along the 100se edge (DO NOT STAPLE, I dnd Molded In bIocK 5, be as spectflc as poss!blo de(ache 2 IOIOW about particular problem areas such as wofdln wtvctI required Inlerprelahon, was 100 ngla, resmctwe, loose, amtxcyous. or was mcompaoble, Enter m block 6 any remarks nol relarea to a spectfic paragraph of the wordm changes winch wou5 alleviate the problems and give Proposed be mahd 10 you MM! 30 days 10 let you know that your COmmenlS were recewed If block 7 IS II ! ed out, an acknowledgement WIII document and are tremg cons(aerea NOTE. This form may not be used to request copies Comments 6utrmltted requirements on current contracts
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on thh fofm
nor to request do not con611tute
wawers, dev!atlons. or c~anf!cat~on of specil~catlon or Imply aumotiza!lon to waive anyPortion of the
(Fold along this line)
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NOTICE

NOTICE 2 28 February 1995

MILITARY HANDBOOK RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT

To all holders of MIL-HDBK-217F 1.

The following pagesofMIL-HDBK-217F New Page($) Front Cover ...

1-2 2-1 2-2 2-3 2-4 2-5 2-6

New Page ~ 21 2-2 2-3 . 2-4 2-5 2-6

2-8 53 54 5-5 5-6 5-9 5-1o 5-23 5-24

6-2 7-3 7-4 9-1 through 9-3 10-1 through 10-6

6-2 7-3 7-4

9-1 through 9-29 10-1 through 10-32

11-2 11-3 11-4, 11-5

Page(s) 10 JUIY 1992 I 2 December 2 December 2 December 2 December - ?ecember z Uecember

15-1 through 15-3 16-1 r 16-2 I #

Army - AT, ME, GL Navy - CG, MC, YD, TD

AMSC NIA DISTRIBUTION

for publlc release; dlstnbutlon

I NOT MEASUREMENT SENSITIVE]

MIL-HDBK-217F 2 DECEMBER 1991

DEPARTMENT OF DEFENSE WASHINGTONDC 20301

1, This standardization with the assistance 2.

handbook was developed of the military departments,

by the Department of Defense federal agencies, and industry. on reliability periodically to

Every effort has been prediction procedures. ensure its completeness

II ,.. .-. .- .. -..., -.-- ___ __

1-1 1-1 1-1 2-1

Part Stress Analysis Prediction ................................................................................ 4:

3-1 3-1 3-2 3-2

. ..... .......................... ................. ..

Gate/Logic Arrays and Microprocessors

XE, ~ and ZQ Tables for All ............. ................................................*.**................0.

(All Except Hybrids) ......................*.*... ............................ ...*.....*,.

(For Hybrids) ...................................................................... .*.......

Transistors, High Frequency, Si FET .......................... Thyristors and SCRS .....................**.........................

Optoelectronics, Optoelectronics, TJ Determination

Emitters ... .... ........ .............

Optoelectronics, Alphanumeric Displays .........0..................

7-3 7-4 8-1 8-2 8-3 8-4 8-5

11-1 11-3 11-4

sECTlc )N 14.1 14.2 SECTI( )N 15.1

23-1 A-1 B-1 c-1

LIST Figure 5-1: Figure 8-1:

FIGURES 5-18 8-1

upon a recently completed

new models to address

coils, motors, relays, and without surface

switches, circuit breakers, mount technology) and

technology solder connections.

Notice 2.0 MIL-HDBK-217F, errors in the basic F Revision.

Monolithic Monolithic Monolithic (including Monolithic Monolithic Monolithic Hybrid

Digital and Linear Gate/Logic Gate/Logic

Array Devices Array Devices

MOS Digital and Linear Bipolar and MOS Digital

Controllers) Bipolar and MOS Memory Devices GaAs Digital Devices

Microcircuits Bubble Acoustic

Memories Wave Devices

page VII of Revision

from the prewous

in the number failure

rate model for Network

Resistors. on data supplied by the Electronic

Rewsed models for Industries Association

TWS and Klystrons based Microwave Tube Division.

II ,.. .-. .- .. -..., -.-- _

(All Except Hybrids) .......................... ............................ ........,.

2-7 _-e_-. ---- .. -- --==a===.a .-A. _...._. - .. _ . __